JPS5915211A - Photosemiconductor device - Google Patents
Photosemiconductor deviceInfo
- Publication number
- JPS5915211A JPS5915211A JP12442682A JP12442682A JPS5915211A JP S5915211 A JPS5915211 A JP S5915211A JP 12442682 A JP12442682 A JP 12442682A JP 12442682 A JP12442682 A JP 12442682A JP S5915211 A JPS5915211 A JP S5915211A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- optical
- semiconductor device
- semiconductor element
- envelope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は光中導体装置I差に係す、竹に光半導体素子と
外部導波路の光結合効率を上げるととが可能な光半導体
装置に係するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to an optical conductor device, and is directed to an optical semiconductor device that is capable of increasing the optical coupling efficiency between an optical semiconductor element and an external waveguide. This is related to
光半導体装置は種々の用途に広く使用されておシ、その
代表としては光伝送用の受信モジュール、送信モジュー
ルに組込まれて広く光伝送装置に使用される例がある。2. Description of the Related Art Optical semiconductor devices are widely used for various purposes, and a representative example is that they are incorporated into a receiving module or a transmitting module for optical transmission and used in a wide range of optical transmission devices.
次に光伝越用め送信モジュールを例にとって発光半導体
装置と光ファイバとの光結合機構の数例を図に促って説
明する。Next, several examples of optical coupling mechanisms between a light emitting semiconductor device and an optical fiber will be explained with reference to the drawings, taking a transmission module for optical transmission as an example.
先ず第1図はキャンタイプの外囲器(1,1に気密封止
された発光半導体装置例えばLED ipらなる光半導
体装置は図示しない光コイ・フタプラグに取付けられた
光ファイバと光結合を行なうためにアダプタ(2)ヲ介
するか直接、光コネクタリセプタクル(3)に固着され
ている。First, FIG. 1 shows a light-emitting semiconductor device, such as an LED IP, hermetically sealed in a can-type envelope (1, 1).The optical semiconductor device, such as an LED IP, is optically coupled to an optical fiber attached to an optical coil/lid plug (not shown). For this purpose, the optical connector receptacle (3) is fixed to the optical connector receptacle (3) through an adapter (2) or directly.
この光半導体装置と光ファイバとの関係は第2図に示す
ようになっている。即ち光半導体装置においてLED
(4) iiヘッダ(5)にマウントボンディングされ
、ガラスからなる窓部(力つきのシェル(6)で気密封
止されている。そしてとのIJD (4)から射出され
た信号光は光ファイバ(8)に結合されることになる。The relationship between this optical semiconductor device and the optical fiber is as shown in FIG. In other words, in optical semiconductor devices, LED
(4) is mounted and bonded to the II header (5) and hermetically sealed with a glass window (strong shell (6)).Then, the signal light emitted from the IJD (4) is sent to the optical fiber ( 8).
この場合、図からもわかるようにLED (4)から射
出された信号光はあらゆる方向に射出されるため、光フ
ァイバ(8)との結合効率を上けるためには次の2つの
要点が重装である。第1の要点はLED(4)の微小相
1から射出された仁は光力・広プンユらないうちに光フ
ァイバ(8)に結合なせるとと、即ち光ファイバ(8)
のコア端面をできるだけLEi)(4)に近づけること
。第2の扱点けLED(4)からの射出角を小さくして
信号光が広がらないようにすると間部に、光7フイハ(
8)への入射角を小さくシフ、光ファイバ(8)の最大
受光角に入るようにすることである。In this case, as can be seen from the figure, the signal light emitted from the LED (4) is emitted in all directions, so the following two points are important in order to increase the coupling efficiency with the optical fiber (8). It is a costume. The first point is that the light emitted from the microscopic phase 1 of the LED (4) can be coupled to the optical fiber (8) before the light is transmitted to the optical fiber (8).
Make the core end face as close to LEi) (4) as possible. If the emission angle from the second handling point LED (4) is made small to prevent the signal light from spreading, the light 7
The angle of incidence on the optical fiber (8) is shifted to a small value so that it falls within the maximum acceptance angle of the optical fiber (8).
この第1の要点を実覗、する方法としてld、第2図の
窓部の厚さ會納<シたり、夕[囲8::÷、その他の精
度を上げてLED (4)と光ファイバ(川のコア端面
との間隔(1)を小さくすることはもちろん、第3図に
示すように光ファイバ(8)の一部がシェル(8)全貫
通してLET) (4)の発光面に近接させたロンチャ
あるいはヒフテール4¥(造のものも提呆さオしている
。As a method to actually see this first point, the thickness of the window shown in Figure 2 is calculated as follows: (In addition to reducing the distance (1) from the core end face of the river, a part of the optical fiber (8) completely penetrates the shell (8) as shown in Fig. 3 and is LET).The light emitting surface of (4) I'm also disappointed in the Roncha or Hifter 4 yen model (made in close proximity).
またI・EDからの射出角を小さくするセ;)造として
第4図に示すようにLE:D (4+)表IM1に凹部
に設け、そこに球レンズ(9)を入れる構造や図示しな
いが、T、ED自身を球面にして凸レンズにイσ(用し
たものも実用化さねている。In addition, as a structure to reduce the angle of emission from the I/ED, as shown in Fig. 4, a structure is provided in the concave part of the LE:D (4+) table IM1 and a ball lens (9) is inserted therein, although it is not shown in the figure. , T, ED itself is made into a spherical surface and a convex lens is used with σ(), but it has not been put into practical use.
更に他の例として第5図、第6し”1に示すよう々プラ
スチックモールド外囲器Hf使用L、LED(14)に
対向する部分を半球(15)状に外部へ突出させた構造
にするものも知られている。As another example, as shown in Figures 5 and 6, 1, a plastic molded envelope Hf is used L, and the part facing the LED (14) is structured to protrude outside in a hemispherical (15) shape. Things are also known.
然るにこれら従来の光半導体装置はいずわもLEDなど
の光半導体素子を単独に気密制止したものを使用した構
造であり前述したような構造で光半導体素子と光ファイ
バとの光結合を良好にすることが可能であるが、最近同
一外囲器内に光半導体素子とその付属回路を組込んだ光
半導体装置が開発され、この様な光半導体装置において
はドライバICヤレシーバIC1バイパスコンデンサナ
ト光半導体素子よシも大形のものを組込むため必然的に
光半導体素子と光ファイバとの結合効率を上げることが
困難となる問題点があった。However, these conventional optical semiconductor devices have a structure that uses a single optical semiconductor element such as an LED that is hermetically sealed, and the above-mentioned structure improves the optical coupling between the optical semiconductor element and the optical fiber. However, recently, an optical semiconductor device that incorporates an optical semiconductor element and its auxiliary circuit in the same package has been developed, and in such an optical semiconductor device, a driver IC, a receiver IC, a bypass capacitor, and an optical semiconductor element are combined. Since a large-sized device is incorporated, there is a problem in that it is difficult to increase the coupling efficiency between the optical semiconductor element and the optical fiber.
本発明は前記問題点に^みなされたものであり、光半導
体素子と付属回路を同時に組込んだ外囲器を使用しても
光半導体素子と光ファイバとの結合効率を上けることが
可能な光半イ^体装i、i提供することを目的としてい
る。The present invention has been made in view of the above-mentioned problems, and it is possible to increase the coupling efficiency between the optical semiconductor element and the optical fiber even if an envelope in which the optical semiconductor element and the attached circuit are incorporated at the same time is used. The aim is to provide a light, half-sized body.
即ち、本発明は透明rfls 44からなる窓h)・、
を有する外囲器と、この外囲器d内部に気密封止された
少くとも光半導体素子とからなる光半導体装置において
、窓部が半導体素子の発光部または受光部に対向する面
のみがほぼ球面状をなす凸レンズからな′す、かつ凸レ
ンズの直下には光半導体素子のみが存在し得る大きさで
あるととを特徴とし更に凸レンズを光半導体素子の発光
面に近ずけるため外囲器の凹部に設けられていることも
特徴としている。That is, the present invention provides a window h) consisting of transparent rfls 44.
In an optical semiconductor device consisting of an envelope having a It is characterized by being made up of a convex lens having a spherical shape, and having a size that allows only the optical semiconductor element to exist directly below the convex lens. Another feature is that it is provided in the recess of.
次に本発明の光半導体装置の一実Mlv例を第7図及び
第8図によシ説明する。本実hII!例では光半導体装
置全モジールと呼ぶ。Next, an example of Mlv of an optical semiconductor device of the present invention will be explained with reference to FIGS. 7 and 8. Honji hII! In the example, it is called an optical semiconductor device whole module.
即ち、同一セラミック多層配線基板(+6)上に送イも
モジュール0ηと受信モジュール(18全塔載した双方
向光モジュールで送信モジュー/I/(17)にはLE
Dσ9とドライバIC(20)や図示しない抵抗がマウ
ント、ボンディングされており、同様に受信モジュール
部θ8)にはPiN ”−PD (23)とレシーバI
C(2イ)及びバイパスコンデンサ0■がマウント、ボ
ンディングされている。In other words, the transmitting module 0η and the receiving module (18) are all mounted on the same ceramic multilayer wiring board (+6), and the transmitting module /I/(17) is equipped with a LE
Dσ9 is mounted and bonded with a driver IC (20) and a resistor (not shown), and similarly, a PiN''-PD (23) and a receiver I are mounted on the receiving module section θ8).
C (2a) and bypass capacitor 0■ are mounted and bonded.
そして各々のモジュール(+7) (18)には中央に
透明部材例えばガラスからなる窓部02を有するコバー
ル材などからなるシェルOnが設けられこのシェル(2
71の周辺部はメクライズ層を介してリング状のセラミ
ック(26)にろう刊されたウェルドリング(2樟にシ
ーム溶接することにより気密封止され鳥信頼性な双方向
光モジュールのチップアセンブリを構成する。Each module (+7) (18) is provided with a shell On made of Kovar material or the like having a window part 02 made of a transparent material such as glass in the center.
The peripheral part of 71 is hermetically sealed by seam welding to a ring-shaped ceramic (26) through a weld ring (2 camphor) through a mekrise layer, and constitutes a reliable bidirectional optical module chip assembly. do.
このようなチップアセンブリは例えばプラスチックモー
ルドにより得られたりセプタクルに挿入接着され、2芯
光コネクタと着脱可能に光結合され双方向光伝送が可能
である。Such a chip assembly is obtained by, for example, a plastic mold, or is inserted and bonded into a receptacle, and is removably optically coupled to a two-core optical connector to enable bidirectional optical transmission.
次に窓部(32及びその近傍を説明すると、窓部02は
光コネクタのプラグ(41)内の光ファイバ(4カの直
径9.5 mmとほぼ同等の曲率半径0.6mmBの半
球面がLED←l、PIN−FD(23)に対向する面
のみに形成された凸レンズと・なっておシ更にこの窓部
国を設ける外囲器の一部であるシェルQ力の部分は凹部
に形成され、プラグ00がシェルに当接しても窓部C3
2)が接触しないようなっているし、貰だ窓部(脅の凸
レンズをLET)01め、PIN −PI) Q3)に
近接さぜられるし更にIC(20)(21)などのポン
ディングワイヤ近傍ではシェルe力はこのボンディング
ワイヤに接角虫しないhさになっているので、このボン
ディングワイヤに接触したり変形させることがない。こ
の場合LED (t<9 、PIN−PD (23+か
らのボンディングワイヤがr’j−3部(32に接触し
ても絶縁部組であるので間頴はない。Next, to explain the window part (32) and its vicinity, the window part 02 has a hemispherical surface with a radius of curvature of 0.6 mmB, which is approximately equivalent to the diameter of 9.5 mm of the optical fiber (4 wires) in the plug (41) of the optical connector. It is a convex lens formed only on the surface facing LED←l, PIN-FD (23), and the shell Q force part, which is a part of the envelope that provides this window area, is formed in a concave part. Even if the plug 00 contacts the shell, the window C3
2) does not come in contact with the window (LET 01, PIN-PI) Q3), and the bonding wires of ICs (20), (21), etc. In the vicinity, the shell force is such that it does not touch the bonding wire, so it does not touch or deform the bonding wire. In this case, even if the bonding wire from the LED (t<9, PIN-PD (23+) contacts the r'j-3 part (32), there is no gap because it is an insulating part group.
前記実施例は光半導体装置として同一セラミック多層配
線基板上に送信モジュールと受信モジュールを形成した
ものについて述べたが、これは一方でもよくまたセラミ
ック多層配線基板を使用せず、一枚のプリント基板を使
用したものやメタル外囲器を使用することも可能である
ことは説明するまでもない。The above embodiment described an optical semiconductor device in which a transmitting module and a receiving module were formed on the same ceramic multilayer wiring board, but it is also possible to form one printed circuit board without using a ceramic multilayer wiring board. Needless to say, it is also possible to use a conventional one or a metal envelope.
上述のように本発明の光半導体装置によれは信頼性が高
く、光半導体素子と付属部品と全同一外囲器中に気密封
止でき、更に光半導体素子と光ファイバの光結合効率を
上げることが可能であるのでその工業的価値は極めて犬
である。As mentioned above, the optical semiconductor device of the present invention has high reliability, allows the optical semiconductor element and accessory parts to be hermetically sealed in the same envelope, and further improves the optical coupling efficiency between the optical semiconductor element and the optical fiber. Its industrial value is extremely significant.
第1図乃至第6図は従来の光半導体装置を示す図でちゃ
第1図は光コネククリセプククルにキャンタイプの光半
導体装置を組込んだ秋態を示す説明用断面図、第2図は
第1図の光半導体装置と光ファイバとの関係を示す説明
用断面図、第3図はシェル内まで光ファイバを挿入した
例を示す断面図、第4図はLEDO四部に球レンズを入
れた構造を示す説明用断面図、第5図はプラスチックモ
ールド形光生曽体装置の外観図、第6図は第5図のA一
部拡大断面図、第7図及び第8図は本発明の光半導体装
置の一実施例を示す図であり、第7図は全体の説明用断
面図、第8図は妥部拡犬説明用断面図である。
3 光コネクタリセプタクル ノ1141.14.1
9・・・LBD7.32・・窓 部 8.42・
・・光ファイバ9 球レンズ 16 セラミッ
ク多層配線基板20・ トライバ■C21,25・パス
バスコンテンツ23・・PIN −P、D 24
・ レシーノ々IC27・・シェル
代理人 弁理士 井 上 −男
第 1 図
第 3 図
第 5 図
第 2 図
第 4 図
第 6 図1 to 6 are diagrams showing conventional optical semiconductor devices; FIG. 1 is an explanatory cross-sectional view showing a state in which a can-type optical semiconductor device is incorporated into an optical connector; and FIG. is an explanatory cross-sectional view showing the relationship between the optical semiconductor device and the optical fiber in Figure 1, Figure 3 is a cross-sectional view showing an example in which the optical fiber is inserted into the shell, and Figure 4 is a cross-sectional view showing an example in which a ball lens is inserted into the four parts of the LEDO. FIG. 5 is an external view of a plastic mold type photoproducer device, FIG. 6 is a partially enlarged sectional view of A in FIG. 5, and FIGS. FIG. 7 is an explanatory cross-sectional view of the entire optical semiconductor device, and FIG. 8 is an enlarged explanatory cross-sectional view of a portion thereof. 3 Optical connector receptacle No. 1141.14.1
9...LBD7.32...Window part 8.42...
・・Optical fiber 9 Ball lens 16 Ceramic multilayer wiring board 20・Tribar ■C21, 25・Pass bus content 23・・PIN -P, D 24
・Resino IC27...Shell Agent Patent Attorney Inoue-O Figure 1 Figure 3 Figure 5 Figure 2 Figure 4 Figure 6
Claims (2)
囲器の内部に気密封止され之少くとも光半導体素子とか
らなる光中導体装置4.において、前記窓部が前記光半
導体素子の発光部または受光部に対向する面のみがほぼ
半球面状をなす凸レンズからな9、かつ前記凸レンズの
直下にね前記光半導体素子のみが存在しイnる大きさで
あることを特徴とする光半導体装置。(1) Optical conductor device 4 consisting of an envelope having a window made of a transparent material and at least an optical semiconductor element hermetically sealed inside the envelope. In 9, the window portion is formed of a convex lens in which only the surface facing the light emitting portion or the light receiving portion of the optical semiconductor element has a substantially hemispherical shape, and the optical semiconductor element is only present directly below the convex lens. What is claimed is: 1. An optical semiconductor device characterized in that it has a size that is
特徴とする特許請求の範囲第1項記載の光半導体装置。(2) The optical semiconductor device according to claim 1, wherein the convex lens is provided in a concave portion of the envelope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12442682A JPS5915211A (en) | 1982-07-19 | 1982-07-19 | Photosemiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12442682A JPS5915211A (en) | 1982-07-19 | 1982-07-19 | Photosemiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5915211A true JPS5915211A (en) | 1984-01-26 |
Family
ID=14885188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12442682A Pending JPS5915211A (en) | 1982-07-19 | 1982-07-19 | Photosemiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5915211A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008139446A (en) * | 2006-11-30 | 2008-06-19 | Sumitomo Electric Ind Ltd | Optical module |
-
1982
- 1982-07-19 JP JP12442682A patent/JPS5915211A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008139446A (en) * | 2006-11-30 | 2008-06-19 | Sumitomo Electric Ind Ltd | Optical module |
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