JPS59165258A - Recording and reproducing system - Google Patents

Abstract

PURPOSE:To perform excellently long-time recording and reproduction by a polycrystal or amorphous semiconductor with a <=20mum, forming an insulating film with a charge storing function thereupon, and detecting varition in electrostatic capacity in a frequency band of <=200MHz during reproduction. CONSTITUTION:The thickness of the polycrystal or amorphous semiconductor is 1/50 as large as the about 1mm. thickness that a conventional Si single crystal plate has and extremely thin, and the detection frequency band of variation in electrostatic capacity is set low, i.e. <=1/5 a conventional frequency band. A signal voltage 6 corresponding to an information signal to be recorded is applied between a conductive recording stylus 5 and a metallic substrate 1 to record the signal by trapping charges successively according to the relative movement between a disk and the conductive recording stylus 5. An LC resonance circuit 8 which has a resonance frequency f1 and resonance characteristics 21 is connected to the conductive reproducing stylus 7 for a detection system for capacity variation. The resonance circuit 8 generates an output voltage corresponding to variation in the resonance characteristics, and the output voltage is detected by a peak detecting circuit 10 to reproduce the information signal 23.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention provides a set of recording and reproducing units that can arbitrarily record and reproduce or replace information such as a video number.
Two Seki 1-ru. 1 [Technical Background of the Invention] Conventionally known optical or capacitive video discs are playback-only discs, and they have the disadvantage that users cannot record information or change information at will. are doing. Therefore, the inventors first proposed a recording and reproducing method that allows h1 to arbitrarily rewrite information. This recording/reproducing method uses a silicon oxide film (8i0.) and a silicon nitride film (SiS) on a silicon (Si), eji crystal substrate.
For example, a disc-shaped multi-edge medium in which N4) is laminated is used, and a recording needle to which information to be recorded No. 41 is applied is brought into opposing contact with the silicon nitride film of this recording medium, and recording is performed. Move 4-dimensionally between the medium and [h
This is used to record the sum signal. At this time, a charge corresponding to the magnitude of the information signal applied through the recording needle is transferred from the Si single crystal substrate to Sin2g due to the tunnel effect.
through the S I 3N 4 film and is trapped. Furthermore, a depletion layer is formed in the Si single crystal substrate depending on the size of the trapped charges. Therefore, the reproduction of the recorded information signal is similarly numbing reproduction needle request 5L3N4.
This can be done by bringing the film into opposing contact with the recording medium and moving it relative to the recording medium, and detecting the entire capacitance of the depletion layer formed on the Si single crystal substrate.

[Problems with backbone technology] However, such conventional recording and reproducing methods are
It is necessary to use a single crystal substrate. As is well known, there is a limit to the diameter of Si crystals that can be pulled, and currently it is difficult to obtain the desired large 8i single crystal. For this reason, there is a problem in that even as a semiconductor disk, it is not possible to obtain a large disk, and a long recording/playback time is not possible. Disks using monocrystalline silicon also have the disadvantage that they are extremely expensive.

[Purpose of the invention]

The present invention has been made in view of the above points, and the overall purpose of the present invention is to provide a recording/reproducing power type that allows a desired large-sized disk to be produced easily and at low cost, and is capable of recording and reproducing for a long time. It is.

[Summary of defense]

The present invention uses a polycrystalline or amorphous semiconductor with a thickness of 20 μm or less in place of the conventional S+ single-crystal plate, and forms an insulating film having a thermal storage function on the semiconductor disk. Recording and playback on a semiconductor disk configured with a semiconductor disk is performed as a change in the capacitance of the semiconductor, as in the conventional case, but the change in capacitance is detected when the disk is in use!
This is done in a frequency band of 1"400 MHz or less.

The thickness of the above polycrystalline or amorphous semiconductor is 20 μmn
Below) is the conventional 800 [! It is much thinner than a crystal plate (about 1 piece), and the detection frequency band for the static turtle change to 0 is also lower than that of the conventional one.
It is set lower than ooo r~di (approximately Z), and by adopting such a configuration Z, it is possible to record and reproduce as well as when using a Si single crystal plate.

〔Effect of the invention〕

According to the recording and reproducing method of the present invention, an inexpensive large-sized disk made of an amorphous semiconductor can be used, and long-time recording and reproducing can be performed. Also, recording and playback is possible using f<'j of a disk using a Si single crystal version.
It can be done well like J and I+51.

[Embodiments of the invention]

Hereinafter, the present invention will be explained in detail with reference to one aspect.

FIG. 1 shows an embodiment of the present invention.

The semiconductor disk used in the present invention is formed on a metal substrate 1 with a thickness of 20 μm or less, for example, 1 μmF! ! An extremely thin amorphous silicon layer 2 with a thickness of 20X is formed on top of it.
Culm degree SiO, layer 3, 513N4 with a thickness of about 300X
1(.!4) was formed in Il+quaternary manner, and on 1C, a pull film layer was formed according to the center spacing.

The recording and reproducing operation of the (iX) on this semiconductor disk drive is performed as follows.

First, as shown in FIG. 1, the vulcanizable recording plate 5 is removed and brought into contact with the surface of the semiconductor disk. Between this recording needle 5 and the Kinsho substrate 1, there is an i# to be recorded.
A signal 'voltage 6 corresponding to the multiplier signal is applied, and in this state the paralytic recording gold 15 moves relative to the semiconductor disk. At this time, with respect to the applied signal voltage, -j: Due to the charge in the amorphous silicon substrate or the tunnel effect, Si (J211@3) becomes Si3N<
It reaches,k,−,4,and is trapped. In this way, the information signal is recorded on the disk and the %'Mlj characteristic recording σ (referred to as trapping of charge sequentially according to the relative movement with 5) 13. Generally, FM recording is used to record video signals, but in the case of such li'M recording, information is recorded based on the presence or absence of trapped charges rather than the size of the trapped charges. be exposed. The same holds true for digital signal edges.

Next, reproduction of the recorded signal will be explained.

Now, if we assume that the boundary ihj of amorphous silicon 2 is anti-41 due to the charge of Ll in Si3N411';%4, then the S+'3N4 film volume per unit area f
, (Co), the following equation is given for the depletion layer capacitance Cv.

CO 6, εo/dr, Cv=ε, Iε0/"mirishidd" is 13N4 II% thickness, tIn is amorphous silicon depletion layer thickness, ε8. ε51 is Si, 1
．． N, film 4, and amorphous silicon 2 ratios are 1-. In the above equation, the thickness of the amorphous silicon depletion layer tm is Si,N.

Since it changes depending on the state of charge accumulation in the film, that is, the recording state, it changes with t6'. Therefore, by detecting the change in the depletion layer capacity fn Cv, the band'
Detection of the state of the cargo being inspected, that is, reading of information, becomes an EJ function. As shown in FIG. 1, this specific 7χ answer-change detection method is as follows:
1, this resonant circuit 8 exhibits a resonant characteristic 21 having a resonant frequency f as shown in FIG. The color 11 changes as shown in FIG. 22. The resonant circuit 8 receives an oscillation signal f from an oscillator 9 having a frequency relationship as shown in FIG.

is supplied. Therefore, an output voltage is generated in the resonant circuit 8 according to a change in its resonant characteristics. The output voltage of this resonant surface W68 is detected by the peak detection circuit 10, and thereby the 14-report signal 23 is generated.

Here, the oscillation frequency f of the oscillator 9 is. is 200I\1f
-12 MHz or less, preferably about 20 MHz, and this frequency is a reproduction of the 41,000 MHz oscillation frequency used for disc playback using conventional Si single crystals.Therefore, the resonant circuit also has a frequency of 200 MHz or less. Frequency of F・;
1; is set to operate. As described above, in the present invention, by using a thin amorphous silicon with a thickness of less than 20 μm P1 as a recording medium and increasing the frequency used for detecting capacitance changes when living in a town to below 2001 vll-1z, S i 4; By replacing the crystal with amorphous silicon, the mobility of the semiconductor decreases by 50 to 2000 and the resistance decreases by 10.
0 to 2000, and it has become possible to record and reproduce even in amorphous silicon in the same manner as in crystalline silicon.

It should be noted that a multi-crystalline semiconducting body, for example a polysilicon film, can also be used instead of amorphous silicon. Polysilicon is also 30onφ like the amorphous silicon plate.
A large kK9r video disc can be produced at a low cost and can be recorded for a long time.

Also, amorphous silicon or polysilicon is used as a substrate for the film, and the spikele-like '?' A FM is provided, and a semiconductor film such as amorphous silicon or polysilicon, 5in2. It is also possible to sequentially form Si3N. In this case, the recording can be made into a live ribbed tracking grooved video disc.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a semiconductor disk device according to an embodiment of the present invention, and FIG. 2 is a diagram showing the resonance characteristics of a resonant circuit used during reproduction. 1... Gold 1+-jz substrate 2... Amorphous silicon) pattern 3... 5in21
1. 4...Si3N4 gland 5...Glazing recording needle 6...Signal voltage 7...Silver 7t1 sex playback button 8...Resonance circuit 9...Employee IO
...Detection circuit agent Patent attorney Nori Chika 1i1 (1 other person)

Claims (1)

[Scope of Claims] (1) An isoelectric recording needle to which a recording signal voltage is applied is relatively moved on a semicircular recording medium formed by forming an insulating film having a charge storage function on a semiconductor substrate. , the recording signal voltage (two pairs of windowed charges) is accumulated in the absolute membrane and the signal is recorded 7
A conductive reproduction needle is relatively moved on this recording track to detect the charged state in the insulating film (the state of the depletion layer formed in the semiconductor substrate through two pairs of windows as a change in capacitance). In a recording and reproducing method for reproducing signals, a polycrystalline or amorphous semiconductor with a thickness of 20 μm or more is used as the semiconductor substrate (3). (2) The recording and reproducing method according to claim 1, characterized in that polysilicon or amorphous silicon is used as the semiconductor substrate. (3) Seiryu Detection of turning into an answer sheet is possible by connecting the resonant circuit of the reproducing needle C (2. 200rvi to this resonant circuit
An oscillator with an oscillation frequency of Hz to F is coupled, and r? It is characterized in that it is carried out by utilizing a change in the resonance characteristics of the resonant circuit. ) Regenerative power formula.