JPS59182581A - 光検出半導体素子 - Google Patents

光検出半導体素子

Info

Publication number
JPS59182581A
JPS59182581A JP58057555A JP5755583A JPS59182581A JP S59182581 A JPS59182581 A JP S59182581A JP 58057555 A JP58057555 A JP 58057555A JP 5755583 A JP5755583 A JP 5755583A JP S59182581 A JPS59182581 A JP S59182581A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
base layer
band width
forbidden band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58057555A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0148663B2 (2
Inventor
Akio Sasaki
昭夫 佐々木
Tsuneo Mitsuyu
常男 三露
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58057555A priority Critical patent/JPS59182581A/ja
Publication of JPS59182581A publication Critical patent/JPS59182581A/ja
Publication of JPH0148663B2 publication Critical patent/JPH0148663B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Light Receiving Elements (AREA)
JP58057555A 1983-03-31 1983-03-31 光検出半導体素子 Granted JPS59182581A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58057555A JPS59182581A (ja) 1983-03-31 1983-03-31 光検出半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58057555A JPS59182581A (ja) 1983-03-31 1983-03-31 光検出半導体素子

Publications (2)

Publication Number Publication Date
JPS59182581A true JPS59182581A (ja) 1984-10-17
JPH0148663B2 JPH0148663B2 (2) 1989-10-20

Family

ID=13059054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58057555A Granted JPS59182581A (ja) 1983-03-31 1983-03-31 光検出半導体素子

Country Status (1)

Country Link
JP (1) JPS59182581A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03268369A (ja) * 1990-03-16 1991-11-29 Sharp Corp カラーセンサ
US6399967B1 (en) * 1999-07-06 2002-06-04 Matsushita Electric Industrial Co., Ltd. Device for selectively detecting light by wavelengths

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03268369A (ja) * 1990-03-16 1991-11-29 Sharp Corp カラーセンサ
US6399967B1 (en) * 1999-07-06 2002-06-04 Matsushita Electric Industrial Co., Ltd. Device for selectively detecting light by wavelengths
US6627516B2 (en) 1999-07-06 2003-09-30 Matsushita Electric Industrial Co., Ltd. Method of fabricating a light receiving device

Also Published As

Publication number Publication date
JPH0148663B2 (2) 1989-10-20

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