JPS5919311A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5919311A
JPS5919311A JP57127521A JP12752182A JPS5919311A JP S5919311 A JPS5919311 A JP S5919311A JP 57127521 A JP57127521 A JP 57127521A JP 12752182 A JP12752182 A JP 12752182A JP S5919311 A JPS5919311 A JP S5919311A
Authority
JP
Japan
Prior art keywords
film
crystal
substrate
single crystal
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57127521A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Kashu
夏秋　信義
Masao Tamura
田村　誠男
Shizunori Ooyu
大湯　静憲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57127521A priority Critical patent/JPS5919311A/en
Publication of JPS5919311A publication Critical patent/JPS5919311A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain the excellent single crystal for the titled semiconductor device by a method wherein a number of polycrystalline films, having the measurements smaller than those of the source of heating, are fused simultaneously and a heat conductive barrier is provided when said films are going to be solidified so that the side face part of the films will be solidified later. CONSTITUTION:An oxide film 2 is formed on the surface of an Si single crystal substrate 1 using a plasma anodic oxidation method, a nitride film 3 is formed on said film 2, and then a polycrystalline Si film 4 is formed. At this time, a hole is bored at a part of the film 2. Then, argon laser beams 5 radiate in a scanning manner. At this time, the film 4 is fused, the exposed part of the substrate 1 is turned to a seed crystal, and the film 4 is converted into a single crystal. As the region 6, whereon an insulating film is formed in double layer, works as the barrier of heat conduction to the substrate harder than the region 7, thereby enabling to accomplish an excellent single crystallization.

Description

【発明の詳細な説明】 （１）　　発明の利用分野 本発明は、半導体装置の製造に於て、絶縁物膜上に半導
体単結晶膜を形成する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Field of Application of the Invention The present invention relates to a method for forming a semiconductor single crystal film on an insulator film in the manufacture of semiconductor devices.

（２）従来技術 レーザー光や電子線などを用いた局所的ビーム加熱によ
シ、酸化膜、窒化膜などの絶縁物膜上に形成した多結晶
著しくは非晶質半導体膜を一旦溶融、再固化させて、単
結晶膜化できる可能性が指摘されている。この場合、加
熱領域、従って、溶融領域を走査し、単結晶領域をエピ
タキシャル成長機構により横方向に拡大せしめる方法に
よるが、走査方向へのエピタキシャル成長を持続させる
には、第１図に示す如く、同化が溶融領域側辺部よシ生
じることを避け、溶融領域中心部よシ側辺部に向って同
化が進むようにすることが有効であることが知られてい
る。(2) Conventional technology Polycrystalline and amorphous semiconductor films formed on insulating films such as oxide films and nitride films are melted and re-melted by local beam heating using laser light or electron beams. It has been pointed out that it may be possible to solidify it into a single crystal film. In this case, the method is to scan the heated region, and therefore the melted region, and expand the single crystal region in the lateral direction by an epitaxial growth mechanism, but in order to sustain the epitaxial growth in the scanning direction, assimilation is necessary as shown in Fig. 1. It is known that it is effective to avoid the occurrence of cracking along the sides of the melted region and to allow assimilation to proceed from the center of the melted region toward the sides.

なお、同図において、１１はシリコン基板、１２は酸化
硅素（Ｓｉｎ、）、１３はレーザ・ビーム照射によって
単結晶化しようとするシリコン、１４はレーザ・ビーム
、１５は走査方向、１６は同化方向、１７は溶融領域を
それぞれ示す。In the figure, 11 is a silicon substrate, 12 is silicon oxide (Sin), 13 is silicon to be made into a single crystal by laser beam irradiation, 14 is a laser beam, 15 is a scanning direction, and 16 is an assimilation direction. , 17 indicate melting regions, respectively.

このために従来よシ提案されている方法には、第１図に
併示したように加熱源として用いるビームの断面形状を
整形すること、おるいは、断面内ビーム強度分布を側辺
部で高強度とすることによｐ、溶融領域の中心部に比し
、側辺部が相対的に高温となシ、時間的に遅く固化する
ようにする方法、他の類似の方法としては、第２図に示
す如く、単結晶化せんとする多結晶もしくは非晶質膜１
３を部分的に形成しておき、側辺部近傍の基板をも加熱
するようにして、側辺部の放熱が生じにくくし、その結
果、側辺部が中心部に比し相対的に高温となシ、時間的
に遅く固化するようにする方法がある。（参考文献ｉ　
Ｈ−Ｊ−Ｌｅａｍｙ　；　Ｌ　ａｓｅｒｐａｂｒｉｃａ
ｔｉｏｎ　ｏｆ　Ｂ：　ｏｎ　１）ｉｅＪｅｃｔｒｉｃ
　５ｕｂｓｔｒａｔｅｓｔｏｂｅｐｕｂｌｉｓｈｅｄ　
ｉｎ　ｐｒｏｃ＠Ｉ、ａｓｅ　−５ｏｌｉｄ　Ｉｎｔ。Conventionally proposed methods for this purpose include shaping the cross-sectional shape of the beam used as a heating source, as shown in Figure 1, or changing the beam intensity distribution in the cross-section to the sides. A method of increasing the strength so that the side portions of the molten region are not at a relatively high temperature compared to the center of the melting region and solidifying more slowly than the center of the molten region is another similar method. As shown in Figure 2, a polycrystalline or amorphous film 1 to be made into a single crystal.
3 is formed partially so that the substrate near the sides is also heated, making it difficult for heat radiation to occur at the sides, and as a result, the sides are relatively hot compared to the center. There is a way to make it solidify more slowly. (References i
H-J-Leamy;
tion of B: on 1)ieJetric
5ubstratestobepublished
in proc@I, ase -5olid Int.

１９８１） 上述したように、いずれの方法に於ても、溶融領域の側
辺部が、中央部に比し相対的に高温となるようにし、中
央部より側辺ｉｌｌに向って同化が進行するようにする
ことが基本的な考え方になっている。しかし、上記従来
法では、ビーム形状に依存する要素が強く、単結晶化せ
んとする膜の空間的形状を任意に設定することが困難で
あること、温度分布制御が必ずしも安定しないこと等の
難点があった。(1981) As mentioned above, in both methods, the sides of the melting region are made to be relatively hotter than the center, and assimilation progresses from the center toward the sides. The basic idea is to do so. However, the conventional method described above has drawbacks such as factors that strongly depend on the beam shape, making it difficult to arbitrarily set the spatial shape of the film to be single-crystallized, and temperature distribution control not necessarily being stable. was there.

（３）発明の目的 本発明は、上記従来法の欠点を除去し、加熱源の形状に
それ程依存せず、種々の比較的任意形状を有する多結晶
もしくは非晶質膜を５同時に単結晶化する方法を提供す
ることを目的とする。(3) Purpose of the Invention The present invention eliminates the drawbacks of the above-mentioned conventional methods, and is capable of simultaneously monocrystallizing five polycrystalline or amorphous films having various relatively arbitrary shapes without depending so much on the shape of the heating source. The purpose is to provide a method for

（４）発明の総括説明 溶融領域を走査するだめの加熱源の進行方向に略直交す
る方向の、単結晶化せんとする多結晶もしくは非晶質膜
の寸法を、加熱源の寸法より小さい範囲に限定し、少な
くともこの方向については、略同時に溶融させ、固化に
際しては、中央部に比し側辺部が遅く固化するように、
熱伝導の障壁として働く絶縁物の材質、構造を設定する
。このようにすることにより、不都合な核発生を避は乍
ら、加熱源の進行方向に単結晶領域を拡大していくこと
ができる。このとき、単結晶化した膜の面方位を厳密に
規定するためには、加熱源を走査する際に、基板結晶を
一部露出せしめておき、これを種結晶とする方法（Ｊｐ
ｎ、Ｊ４ｐｐ１．Ｐｈｙｓ　、　１９（１９８０）　Ｌ
　２３　）と併用する。こうして厳密に規定された方位
を有する絶縁膜上の単結晶膜を得ることが出来れば、こ
れを種結晶とした結晶成長を行なわせることによシ、単
結晶領域を更に拡大することが可能となる。(4) General description of the invention The dimensions of the polycrystalline or amorphous film to be single-crystalized in a direction substantially perpendicular to the direction of movement of the heating source used to scan the melting region are within a range smaller than the dimensions of the heating source. At least in this direction, melting is performed at approximately the same time, and when solidifying, the side parts are solidified more slowly than the central part.
Set the material and structure of the insulator that acts as a barrier to heat conduction. By doing so, the single crystal region can be expanded in the direction of movement of the heating source while avoiding inconvenient nucleation. At this time, in order to strictly define the plane orientation of the single-crystalline film, there is a method in which a part of the substrate crystal is exposed when scanning the heating source and this is used as a seed crystal (JP
n, J4pp1. Phys, 19 (1980) L
23). If it is possible to obtain a single crystal film on an insulating film with a strictly defined orientation in this way, it is possible to further expand the single crystal region by using this as a seed crystal for crystal growth. Become.

（５）実施例 以下、本発明を実施例を診照して詳細に説明する。第３
図は加熱源、従って、溶融領域を走査する方向に略直交
する方向の被処理試料の断面形状を示す。（１００）Ｓ
ｉ牟結晶基板ｌの表面にプラズマ陽極酸化法によシ約０
．３μｍの厚さの酸化膜（Ｓｉｎ２膜）２を形成する。(5) Examples Hereinafter, the present invention will be explained in detail with reference to examples. Third
The figure shows the cross-sectional shape of the sample to be treated in a direction substantially perpendicular to the direction of scanning the heating source and thus the melting zone. (100)S
The surface of the crystal substrate is coated with approximately 0
．． An oxide film (Sin2 film) 2 with a thickness of 3 μm is formed.

次いで、酸化膜２の上に、更に、気相反応法（ＣＶＤ法
）により、約０．３μｍの厚さの窒化膜（ＳｉａＮＬ膜
）３を形成し、周知のフォトリングラフィ手法によシ部
分的に窒化膜を除去し、第３図のよう々構造の酸化膜と
窒化膜の積層構造を形成する。その後、ＣＶＤ法によシ
、約０．５μｍの厚さの多結晶Ｓｉ膜４を形成し、第３
図に示した領域以外の多結晶Ｓｉ膜をフォトリングラフ
ィ手法によシ除去する。なお、多結晶Ｓｉ膜４を形成す
る以前に、酸化膜２の一部に、フォトリングラフィ手法
により穴を開け、結晶基板の表面を部分的に露出させて
おく。第４図は上記の工程によシ作成した試料の立体構
成図を示す。Next, a nitride film (SiaNL film) 3 with a thickness of approximately 0.3 μm is further formed on the oxide film 2 by a vapor phase reaction method (CVD method), and the nitride film (SiaNL film) 3 is formed on the oxide film 2 by a well-known photolithography method. The nitride film is then removed to form a laminated structure of an oxide film and a nitride film as shown in FIG. Thereafter, a polycrystalline Si film 4 with a thickness of about 0.5 μm is formed using the CVD method, and a third
The polycrystalline Si film in areas other than those shown in the figure is removed by photolithography. Note that before forming the polycrystalline Si film 4, a hole is made in a part of the oxide film 2 by photolithography to partially expose the surface of the crystal substrate. FIG. 4 shows a three-dimensional diagram of the sample prepared by the above steps.

次に、第４図に示した如く、走査方向に略直交する方向
に細長い断面形状のアルゴンレーザービーム５を走査し
ながら照射する。このとき、多結晶Ｓｉ膜４は溶融し、
レーザービーム照射領域の移動につれて、結晶基板ｌの
露出した部分が種結晶となシ、多結晶Ｓｉ膜４は単結晶
となる。この場合、絶縁膜が２層となっている領域６は
、酸化膜のみの単層領域７に比し、結晶基板ｌへの熱伝
導の障壁として強く作用するので、領域６は領域７より
後から固化していくために、前記したように、エピタキ
シャル成長が持続し、良好な単結晶化が達成される。Next, as shown in FIG. 4, an argon laser beam 5 having an elongated cross section is irradiated while scanning in a direction substantially perpendicular to the scanning direction. At this time, the polycrystalline Si film 4 melts,
As the laser beam irradiation area moves, the exposed portion of the crystal substrate l becomes a seed crystal, and the polycrystalline Si film 4 becomes a single crystal. In this case, the region 6 with two layers of insulating film acts more strongly as a barrier to heat conduction to the crystal substrate l than the single layer region 7 with only an oxide film, so the region 6 is placed after the region 7. As described above, epitaxial growth continues and good single crystallization is achieved.

上記の処理を施した基板表面上に、第５図に示す如く、
更に、高ｖｃ窒中で、表面清浄化処理を行なった後、分
子線蒸着法で非晶質Ｓｉ膜８を約１μｍの厚さに形成す
る。その後、６５０ｔ？、１０分の熱処理を加えると、
非晶質Ｓｉ膜８は、既に単結晶化した膜４′を種結晶と
し、固相エピタキシャル機構により、単結晶化する。但
し、本実施例では、非晶質Ｓｉ腹膜８全 めに、種結晶として用いた、前もって単結晶化させてお
いた膜４′は、約２μｍピッチで配列されており、非晶
質８ｉ膜８の結晶化が、縦方向と、横方向で略同じ時間
で終了するように配慮しである。As shown in FIG. 5, on the surface of the substrate subjected to the above treatment,
Furthermore, after performing a surface cleaning treatment in high vc nitrogen, an amorphous Si film 8 with a thickness of about 1 μm is formed by molecular beam evaporation. After that, 650t? , with 10 minutes of heat treatment,
The amorphous Si film 8 is made into a single crystal by a solid phase epitaxial mechanism using the already single crystallized film 4' as a seed crystal. However, in this example, the film 4', which has been single-crystalized in advance and used as a seed crystal, is arranged on the entire amorphous Si peritoneum 8 at a pitch of about 2 μm, and the amorphous 8i film is Care was taken so that the crystallization of No. 8 was completed in approximately the same time in the vertical direction and in the horizontal direction.

本実施例では、絶縁物上全域に単結晶膜を形成したが、
目的によっては、必ずしも全域に単結晶膜を形成する必
要はなく、レーザービーム照射により単結晶化した不連
続な膜をそのまま半導体素子製造に供しても良い。また
、上記の膜を堆積し、所望の構造に加工する方法は、本
実施例の方法に限定されるものではなく、例えば、局所
的光学反応を用いる方法によっても良い。更に、既に単
結晶化した不連続膜を種結晶として、もつと広い領域に
単結晶膜を成長させる方法も、本実施例の方法に限定さ
れるものではなく、例えば、気相成長法によることも可
能である。また、絶縁膜としては酸化膜、窒化膜以外の
ものでも良く、更に、２層絶縁膜構造の代シに、同一材
質の膜厚を変えて、同様の効果を実現することもできる
。なお、本発明による溶融、再同化を経由する単結晶膜
形成では、第４図の領域７の幅は無制限に広げられると
いう訳でなく、構造による温度分布制御が可能な範囲に
限られるため、実施例では１０μｍとしている。In this example, a single crystal film was formed over the entire area on the insulator, but
Depending on the purpose, it is not necessarily necessary to form a single crystal film over the entire area, and a discontinuous film made into a single crystal by laser beam irradiation may be used as it is for semiconductor device manufacture. Further, the method for depositing the above film and processing it into a desired structure is not limited to the method of this embodiment, and may be, for example, a method using a local optical reaction. Furthermore, the method of growing a single crystal film over a wide area using a discontinuous film that has already been made into a single crystal as a seed crystal is not limited to the method of this embodiment, for example, vapor phase growth may be used. is also possible. Further, the insulating film may be a film other than an oxide film or a nitride film, and the same effect can also be achieved by changing the film thickness of the same material instead of a two-layer insulating film structure. In addition, in the formation of a single crystal film via melting and reassimilation according to the present invention, the width of the region 7 in FIG. In the example, the thickness is 10 μm.

（６）　　まとめ 以上説明したごとく、本発明によれば、加熱源の寸法よ
り小さく、かつ、絶縁物構造による幅ｉ制御が可能な寸
法範囲に於ては、基板表面に設けた寸法の異なるＳｉ膜
が共存する場合にも、該Ｓｉ膜を安定に単結晶化するこ
とが可能となる。(6) Summary As explained above, according to the present invention, in the size range that is smaller than the size of the heating source and in which the width i can be controlled by the insulator structure, Si of different sizes provided on the substrate surface can be used. Even when films coexist, it is possible to stably form the Si film into a single crystal.

また、結晶基板と種結晶としているため、結晶方位のば
らつきがなく、これら単結晶化した不連続膜を種結晶と
した結晶成長と組合せることにより、連続片結晶膜を形
成することも容易となる。In addition, since the crystal substrate and the seed crystal are used, there is no variation in crystal orientation, and by combining these monocrystalline discontinuous films with crystal growth using the seed crystal, it is easy to form a continuous piece crystal film. Become.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はエピタキシャル成長を持続させるための条件及
び公知例と定性的に示す模式図，第２図はエピタキシャ
ル成長を持続させるに適当な熱放散を起させる基板構造
の公知例を示す模式図、第３図は実施例に用いた基板構
造断面図、第４図は実施例に用いた基板構造の立体模式
図、第５図は単結晶領域を拡大させた場合の基板構造断
面図である。 １・・・基板Ｓｉ結晶、２・・・Ｓ　ｉ　０２膜、３・
・・Ｓｌ　Ｂ　Ｎ４膜、４・・・多結晶もしくは非晶質
膜、４′・・・膜４が単結晶化した膜、５・・・レーザ
ービーム、６・・・絶縁膜が２層の領域、７・・・絶縁
膜が１層の領域、８・・・非晶質Ｓｉ膜。 代理人　弁理士　薄田利幸 創　１　口 ／７ 第　２　２Fig. 1 is a schematic diagram qualitatively showing conditions and known examples for sustaining epitaxial growth, Fig. 2 is a schematic diagram showing known examples of a substrate structure that causes appropriate heat dissipation to sustain epitaxial growth, and Fig. 3 The figure is a sectional view of the substrate structure used in the example, FIG. 4 is a three-dimensional schematic diagram of the substrate structure used in the example, and FIG. 5 is a sectional view of the substrate structure when the single crystal region is enlarged. DESCRIPTION OF SYMBOLS 1... Substrate Si crystal, 2... Si02 film, 3...
...Sl B N4 film, 4... Polycrystalline or amorphous film, 4'... Film in which film 4 is single crystallized, 5... Laser beam, 6... Two-layer insulating film Region, 7... Region with one layer of insulating film, 8... Amorphous Si film. Agent Patent Attorney Toshiyuki Usuda 1/7 2nd 2nd

Claims (1)

【特許請求の範囲】 １、部分的に結晶基板を露出せしめるための窓を有し、
かつ、該窓に接続した領域に於て、厚さもしくは材質が
部分的に異なる構造を有する絶縁膜を該結晶基板上に形
成する工程、上記窓と該窓に接続する絶縁膜上を連続し
て覆うように、多結晶あるいは非晶質膜を部分的に形成
する工程、該多結晶あるいは非晶質膜を加熱溶融、再固
化させ、該絶縁膜上の領域にある該多結晶あるいは非晶
質膜を、上記基板結晶と同一の結晶方位を有する単結晶
膜と化す工程から成ることを特徴とする半導体装置の製
造方法。 ２、特許請求の範囲第１項記載の方法によシ形成した単
結晶膜を種結晶として結晶成長を行なう工程を含むこと
を特徴とする半導体装置の製造方法。[Claims] 1. Having a window for partially exposing the crystal substrate,
and a step of forming an insulating film on the crystal substrate having a structure in which the thickness or material is partially different in the region connected to the window, and a step of forming an insulating film on the crystal substrate in which the window and the insulating film connected to the window are continuously formed. A process of partially forming a polycrystalline or amorphous film so as to cover the insulating film by heating and melting the polycrystalline or amorphous film to re-solidify the polycrystalline or amorphous film in the area on the insulating film. 1. A method of manufacturing a semiconductor device, comprising the step of converting a crystalline film into a single crystal film having the same crystal orientation as the substrate crystal. 2. A method for manufacturing a semiconductor device, comprising the step of performing crystal growth using the single crystal film formed by the method according to claim 1 as a seed crystal.
JP57127521A 1982-07-23 1982-07-23 Manufacture of semiconductor device Pending JPS5919311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57127521A JPS5919311A (en) 1982-07-23 1982-07-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57127521A JPS5919311A (en) 1982-07-23 1982-07-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5919311A true JPS5919311A (en) 1984-01-31

Family

ID=14962069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57127521A Pending JPS5919311A (en) 1982-07-23 1982-07-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5919311A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214423A (en) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal layer
JPS627112A (en) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214423A (en) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal layer
JPS627112A (en) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal layer

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