JPS5919332A - Emitting method for laser beam - Google Patents
Emitting method for laser beamInfo
- Publication number
- JPS5919332A JPS5919332A JP57128523A JP12852382A JPS5919332A JP S5919332 A JPS5919332 A JP S5919332A JP 57128523 A JP57128523 A JP 57128523A JP 12852382 A JP12852382 A JP 12852382A JP S5919332 A JPS5919332 A JP S5919332A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- irradiation
- energy density
- recombined
- uniform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、一様な照射エネルギー密度でレーザービーム
を照射する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for irradiating a laser beam with uniform irradiation energy density.
近年、レーザーの応用は多くの分野に及ぶようになって
いるが、例えば、 LSI、超LSIなどの集積回路素
子の製造やレーザーアニーリング等の分野では、レーザ
ービームを広い面積にわたって一様な照射エネルギー密
度で照射することが要望されている。In recent years, lasers have been applied to many fields. For example, in fields such as the manufacturing of integrated circuit elements such as LSI and VLSI, and laser annealing, laser beams are applied to a wide area with uniform irradiation energy. It is desired to irradiate with high density.
レーザービームは円形で、そのエネルギー密度はガウシ
アン分布となっており、これを複雑な光学系を用いて、
一様なエネルギー密度分布のレーザービームに変換する
試みはこれまで種々行われている(Laser Foc
us Oct、 p3’l、 /9g/)。第1図は、
従来の代表的なレーザービーム照射法の光学系の一例を
示す。レーザービームlを分割ミラー2に照射して、λ
分割された反射ビーム1.A 、 lBをλつの円筒状
の凹面ミラー3A、 aBで反射させ、照射面4上で再
合成する。第一図Aに示すように、反射ビームLA 、
inは半鐘形(半分のガウシアン分布形状)の部分か
らなり、エネルギー密度の低い部分が重なって互いに補
償し合い、再合成ビームは第λ図BVC立体的に示すよ
うに、X方向にエネルギー密度が一様で、Y方向に一様
でない(ガウシアン分布の)矩形状のビームとなる。そ
して、このビームをY方向に動かすか又は照射面をY方
向に移動させることによって、幅Wの帯状領域にわたっ
て一様な照射エネルギー密度で照射することができる。The laser beam is circular and its energy density has a Gaussian distribution, which can be detected using a complex optical system.
Various attempts have been made to convert the laser beam into a laser beam with a uniform energy density distribution (Laser Foc
us Oct, p3'l, /9g/). Figure 1 shows
An example of an optical system for a typical conventional laser beam irradiation method is shown. Laser beam l is irradiated onto split mirror 2, and λ
Split reflected beam 1. A and lB are reflected by λ cylindrical concave mirrors 3A and aB, and recombined on the irradiation surface 4. As shown in FIG. 1A, the reflected beam LA,
in consists of half-bell-shaped parts (half Gaussian distribution shape), parts with low energy density overlap and compensate each other, and the recombined beam has energy density in the X direction as shown in Figure λ BVC three-dimensionally. The beam becomes a rectangular beam that is uniform but not uniform in the Y direction (Gaussian distribution). Then, by moving this beam in the Y direction or moving the irradiation surface in the Y direction, it is possible to irradiate a belt-shaped region with a width W with a uniform irradiation energy density.
しかしながら、第1図の従来の照射法ではビーム又は照
射面を移動しなければ、照射領域を一様なエネルギー密
度で照射することができないという問題点がある。更に
3個のミラーを組立構成したものを用いるため、光学系
がコン・ぐクト化されず特にその調整も容易でなく、ま
た機械的振動などによってビームの入射位置がずれた場
合には影響を受は易いなどの問題点がある。However, the conventional irradiation method shown in FIG. 1 has a problem in that the irradiation area cannot be irradiated with uniform energy density unless the beam or irradiation surface is moved. Furthermore, since an assembly of three mirrors is used, the optical system is not integrated and its adjustment is not particularly easy, and there is no effect if the beam incidence position is shifted due to mechanical vibrations, etc. There are problems such as easy acceptance.
本発明はこのような問題点を解決しようとするものであ
り、以下、添付図面により詳しく説明する。第3図は本
発明の照射法の原理説明図である。The present invention aims to solve these problems, and will be described in detail below with reference to the accompanying drawings. FIG. 3 is a diagram explaining the principle of the irradiation method of the present invention.
ピラミッド型の四面プリズム5の中心部にレーザービー
ムlを入射σせることにより、グつの部分に分割される
。それぞれの部分1A〜l、は中心軸6方向に屈II′
i′すれ、照射面4・上で重なり合い、−辺がlの四角
形の領域に一様な照射エネルギー密度で照射される。四
面プリズム5と照射面4の距離りを調節することにより
、辺lが変わり、最適の照射条件(高いエネルギーの利
用効率でエネルギー密度の不均一度が極小値をとる条件
)を得ることができる。By making the laser beam σ incident on the center of the pyramid-shaped four-sided prism 5, it is divided into two parts. Each portion 1A to l is bent II' in the direction of the central axis 6.
i', they overlap on the irradiation surface 4, and a rectangular area with -side l is irradiated with uniform irradiation energy density. By adjusting the distance between the four-sided prism 5 and the irradiation surface 4, the side l changes, and the optimum irradiation conditions (conditions where the non-uniformity of energy density takes a minimum value with high energy utilization efficiency) can be obtained. .
い寸、ガウシアン分布の円形レーザービームのスポット
サイズ(ビームのエネルギー密度がガウシアン分布して
いるとき、エネルギー密度がピーク値の舟になるところ
のビーム半径)をa、ビーム中心からの距離をrとする
と、照射エネルギー密度Zは、
2
z=A−eXpC−2〔−T)〕・・・・・・・・・・
・・・・・・・(1)たvしAは任意定数
で表わされる。第り図A及びBに示すように、ダ分割さ
れたビームIA〜IDをそれぞれ中心軸方向に移動させ
て照射面上で重ね合せ、−辺lの四角形のビームを再合
成する場合、ビーム内の任意の点PはX、y座標として
次式で表わσれる。Let a be the spot size of a circular laser beam with a Gaussian distribution (when the energy density of the beam has a Gaussian distribution, the beam radius where the energy density reaches its peak value) is a, and the distance from the beam center be r. Then, the irradiation energy density Z is 2 z=A-eXpC-2 [-T)]...
(1) A is expressed by an arbitrary constant. As shown in Figs. An arbitrary point P is expressed by the following equation as the X and y coordinates.
したがって、点Pにおける照射エネルギー密度は(1)
及び(2)式から、
で表わされる。Therefore, the irradiation energy density at point P is (1)
From equation (2), it is expressed as follows.
第5図は(3)式を用いて計算した四角形の再合成ビー
ムの一例を三次元的に表示したものである。FIG. 5 is a three-dimensional representation of an example of a rectangular recombined beam calculated using equation (3).
たソし、a−6−9、11= g cm、′//a=八
/乙でへる。Tasoshi, a-6-9, 11 = g cm, '//a = 8/Otsu de Heru.
第4図は本発明によって得られるビームの照射エネルギ
ー密度の一様度とエネルギー利用効率(再合成ビームの
エネルギー/もとのビームエネルギー)を示す。図示の
如く、ζ−/、/ で極小値をとりそのときの照射エ
ネルギー密度の不均一度は約乙係、エネルギー利用効率
は約qllotとなる。FIG. 4 shows the uniformity of beam irradiation energy density and energy utilization efficiency (recombined beam energy/original beam energy) obtained by the present invention. As shown in the figure, the non-uniformity of the irradiation energy density at that time takes a minimum value at ζ-/, / and the energy utilization efficiency is about qllot.
こ\で、不均一度とは、再合成ビームのエネルギー密度
の最大値(Imax) と最小値(Imin) の
差(Imax−Imin) の最大値(Imax)
に対する割合を意味する。Here, the degree of non-uniformity is the maximum value (Imax) of the difference (Imax-Imin) between the maximum value (Imax) and minimum value (Imin) of the energy density of the recombined beam.
means the percentage of
なお、最適化された照射面をレンズ系で投影し拡大縮小
することによって、所望面積の一様な照射面を得ること
ができる。Note that by projecting and enlarging/reducing the optimized irradiation surface using a lens system, it is possible to obtain a uniform irradiation surface with a desired area.
以上詳述したように本発明は、7個の四面プリズムを用
いるだけで一様な照射エネルギー密度で効率良くレーザ
ービームを照射でき、光学系も極めて簡単であり、又、
四面プリズムから照射面までの距離を調節するだけでよ
いので操作が容易である。更に、ミラーを用いないため
、四面プリズムの中心部にビームが傾いて入射してもビ
ームの再合成にほとんど支障をきたびない。殊に、ビー
ムの掃引又は照射面の移動を行わなくてもよいので、・
ぐルスレーザービームによる照射にも適用できるという
利点がある。As detailed above, the present invention can efficiently irradiate a laser beam with uniform irradiation energy density by simply using seven four-sided prisms, and the optical system is extremely simple.
It is easy to operate because it is only necessary to adjust the distance from the four-sided prism to the irradiation surface. Furthermore, since no mirror is used, even if the beams are incident on the center of the four-sided prism at an angle, there will be almost no problem in recombining the beams. In particular, since there is no need to sweep the beam or move the irradiation surface,
It has the advantage that it can also be applied to irradiation with a glucose laser beam.
なお、本発明に用いるピラミッド型の四面プリズムは、
第7図に示す如く四角錘面5Aを有しておればよく、底
面5Bの形状は円形、四角形、楕円形などいずれでもよ
く、目的に応じて適宜選択すればよい。又、四面プリズ
ムへのビームの入射は、第3図の如く底面側に限らず、
四角錘面側から入射させても同様の再合成ビームが得ら
れる。The pyramid-shaped four-sided prism used in the present invention is
As shown in FIG. 7, it is sufficient to have a square pyramidal surface 5A, and the shape of the bottom surface 5B may be circular, square, oval, etc., and may be appropriately selected depending on the purpose. Also, the incidence of the beam on the four-sided prism is not limited to the bottom side as shown in Figure 3.
A similar recombined beam can be obtained even if the beam is incident from the square pyramid surface side.
第1図は従来のレーザー−ビーム照射法の光学系を示す
図、第ユ図Aは第1図で得られる再合成ビームのエネル
ギー密度分布を示す図、第コ図Bは同図Aの斜視図、第
3図は本発明のレーザービーム照射法の光学系の一例を
示す図、第q図A及びBは本発明によって得られる再合
成ビームの説明図、第S図は本発明によって得られる再
合成ビームのエネルギー密度分布の一例を示す斜視図、
第4図は本発明によって得られる再合成ビームの上図中
の符号=1・・・・・・・・ レーザービーム、■A
〜ID ・・・・・・・・・分割されたビーム、2
・・・・・・・・・分割ミラー、 4(・・・・・・・
・・照射面、5・・・・・・・・・ ピラミッド型四面
プリズム、6・・・・・・・・・中心軸、
l・・・・・・・・・再合成ビームの四角形の一辺、a
・・・・・・・・・ ガウシアン分布するレーザービー
ムのスポットサイズ。
特許出願人 理化学研究所Figure 1 is a diagram showing the optical system of the conventional laser beam irradiation method, Figure A is a diagram showing the energy density distribution of the recombined beam obtained in Figure 1, and Figure B is a perspective view of Figure A. Figure 3 is a diagram showing an example of the optical system of the laser beam irradiation method of the present invention, Figure q A and B are explanatory diagrams of the recombined beam obtained by the present invention, and Figure S is an illustration of the recombined beam obtained by the present invention. A perspective view showing an example of the energy density distribution of the recombined beam,
Figure 4 shows the recombined beam obtained by the present invention, code in the upper figure = 1...Laser beam, ■A
~ID ・・・・・・・・・Divided beam, 2
・・・・・・・・・Split mirror, 4(・・・・・・・・・
...Irradiation surface, 5...Pyramid-shaped four-sided prism, 6...Central axis, l...One side of the rectangle of the recombined beam ,a
・・・・・・・・・ Gaussian distributed laser beam spot size. Patent applicant RIKEN
Claims (1)
ームを入射させて四分割し、そして中心軸方向に屈折し
て出射する各レーザービームを照射面上で四角形状に再
合成して照射することを特徴としたレーザービームの照
射法。 、2)レーザービームのスポットサイズaに対する再合
成レーザービームの四角形の一辺lの比へが/、/にな
るように四面プリズムからの照射面を選定することを特
徴とする特許請求の範囲第1項に記載のレーザービーム
の照射法。[Claims] /) A laser beam is incident on the center of a pyramid-shaped four-sided prism, divided into four parts, and each laser beam is refracted in the direction of the central axis and emitted, and then recombined into a square shape on the irradiation surface. A laser beam irradiation method characterized by irradiation with a laser beam. , 2) The irradiation surface from the tetrahedral prism is selected so that the ratio of one side l of the rectangle of the recombined laser beam to the spot size a of the laser beam is /, /. Laser beam irradiation method described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57128523A JPS5919332A (en) | 1982-07-23 | 1982-07-23 | Emitting method for laser beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57128523A JPS5919332A (en) | 1982-07-23 | 1982-07-23 | Emitting method for laser beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5919332A true JPS5919332A (en) | 1984-01-31 |
Family
ID=14986845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57128523A Pending JPS5919332A (en) | 1982-07-23 | 1982-07-23 | Emitting method for laser beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5919332A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5016149A (en) * | 1988-11-24 | 1991-05-14 | Hitachi, Ltd. | Illuminating method and illuminating apparatus for carrying out the same, and projection exposure method and projection exposure apparatus for carrying out the same |
| JP2004103628A (en) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | Laser annealing apparatus and laser annealing method for TFT substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5587119A (en) * | 1978-12-25 | 1980-07-01 | Toshiba Corp | Laser light radiation method |
-
1982
- 1982-07-23 JP JP57128523A patent/JPS5919332A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5587119A (en) * | 1978-12-25 | 1980-07-01 | Toshiba Corp | Laser light radiation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5016149A (en) * | 1988-11-24 | 1991-05-14 | Hitachi, Ltd. | Illuminating method and illuminating apparatus for carrying out the same, and projection exposure method and projection exposure apparatus for carrying out the same |
| JP2004103628A (en) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | Laser annealing apparatus and laser annealing method for TFT substrate |
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