JPS59231862A - 縦型ｍｏｓトランジスタ - Google Patents

縦型ｍｏｓトランジスタ

Info

Publication number
JPS59231862A
JPS59231862A JP58105544A JP10554483A JPS59231862A JP S59231862 A JPS59231862 A JP S59231862A JP 58105544 A JP58105544 A JP 58105544A JP 10554483 A JP10554483 A JP 10554483A JP S59231862 A JPS59231862 A JP S59231862A
Authority
JP
Japan
Prior art keywords
regions
region
type
implanted
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58105544A
Other languages
English (en)
Japanese (ja)
Other versions
JPH056354B2 (2
Inventor
Teruyoshi Mihara
三原　輝義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP58105544A priority Critical patent/JPS59231862A/ja
Priority to DE3421927A priority patent/DE3421927C2/de
Priority to US06/620,290 priority patent/US4608584A/en
Publication of JPS59231862A publication Critical patent/JPS59231862A/ja
Publication of JPH056354B2 publication Critical patent/JPH056354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
JP58105544A 1983-06-13 1983-06-13 縦型ｍｏｓトランジスタ Granted JPS59231862A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58105544A JPS59231862A (ja) 1983-06-13 1983-06-13 縦型ｍｏｓトランジスタ
DE3421927A DE3421927C2 (de) 1983-06-13 1984-06-13 Vertikal-MOS-Transistor und Verfahren zu dessen Herstellung
US06/620,290 US4608584A (en) 1983-06-13 1984-06-13 Vertical type MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58105544A JPS59231862A (ja) 1983-06-13 1983-06-13 縦型ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS59231862A true JPS59231862A (ja) 1984-12-26
JPH056354B2 JPH056354B2 (2) 1993-01-26

Family

ID=14410523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58105544A Granted JPS59231862A (ja) 1983-06-13 1983-06-13 縦型ｍｏｓトランジスタ

Country Status (3)

Country Link
US (1) US4608584A (2)
JP (1) JPS59231862A (2)
DE (1) DE3421927C2 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238634A (ja) * 1989-01-30 1990-09-20 Philips Gloeilampenfab:Nv 電界効果半導体装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571606A (en) * 1982-06-21 1986-02-18 Eaton Corporation High density, high voltage power FET
JPS61182264A (ja) * 1985-02-08 1986-08-14 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPH0652792B2 (ja) * 1985-02-26 1994-07-06 日産自動車株式会社 半導体装置
US4893160A (en) * 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US4970386A (en) * 1989-06-22 1990-11-13 Westinghouse Electric Corp. Vertical FET high speed optical sensor
DE69131441T2 (de) * 1990-04-13 1999-12-16 Kabushiki Kaisha Toshiba, Kawasaki Methode zur Verhinderung von einer Spannungsschwankung in einem Halbleiterbauelement
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
WO2000052750A2 (de) * 1999-03-04 2000-09-08 Infineon Technologies Ag Verfahren zur herstellung eines bodygebietes für eine vertikale mos-transistoranordnung mit verringertem spezifischem einschaltwiderstand

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842275A (ja) * 1981-09-07 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> 絶縁ゲ−ト型電界効果トランジスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4296429A (en) * 1978-08-09 1981-10-20 Harris Corporation VMOS Transistor and method of fabrication
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842275A (ja) * 1981-09-07 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> 絶縁ゲ−ト型電界効果トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238634A (ja) * 1989-01-30 1990-09-20 Philips Gloeilampenfab:Nv 電界効果半導体装置

Also Published As

Publication number Publication date
DE3421927C2 (de) 1997-04-03
JPH056354B2 (2) 1993-01-26
US4608584A (en) 1986-08-26
DE3421927A1 (de) 1985-01-17

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