JPS5940295B2 - 電流増幅器 - Google Patents

電流増幅器

Info

Publication number
JPS5940295B2
JPS5940295B2 JP54000570A JP57079A JPS5940295B2 JP S5940295 B2 JPS5940295 B2 JP S5940295B2 JP 54000570 A JP54000570 A JP 54000570A JP 57079 A JP57079 A JP 57079A JP S5940295 B2 JPS5940295 B2 JP S5940295B2
Authority
JP
Japan
Prior art keywords
drain
region
impurity
current
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54000570A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5498165A (en
Inventor
オツト・ハインリツヒ・シヤ−デ・ジユニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5498165A publication Critical patent/JPS5498165A/ja
Publication of JPS5940295B2 publication Critical patent/JPS5940295B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/836—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising EDMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP54000570A 1978-01-09 1979-01-05 電流増幅器 Expired JPS5940295B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB000000659/78 1978-01-09
GB65978 1978-01-09

Publications (2)

Publication Number Publication Date
JPS5498165A JPS5498165A (en) 1979-08-02
JPS5940295B2 true JPS5940295B2 (ja) 1984-09-29

Family

ID=9708247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54000570A Expired JPS5940295B2 (ja) 1978-01-09 1979-01-05 電流増幅器

Country Status (3)

Country Link
JP (1) JPS5940295B2 (it)
DE (1) DE2900639C3 (it)
IT (1) IT1099381B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477782A (en) * 1983-05-13 1984-10-16 At&T Bell Laboratories Compound current mirror
NL8302731A (nl) * 1983-08-02 1985-03-01 Philips Nv Halfgeleiderinrichting.
JP2014067912A (ja) * 2012-09-26 2014-04-17 Seiko Instruments Inc カレントミラー回路
JP6058960B2 (ja) * 2012-09-27 2017-01-11 エスアイアイ・セミコンダクタ株式会社 カレントミラー回路

Also Published As

Publication number Publication date
DE2900639A1 (de) 1979-07-12
DE2900639C3 (de) 1980-12-04
DE2900639B2 (de) 1980-03-20
JPS5498165A (en) 1979-08-02
IT1099381B (it) 1985-09-18
IT7828651A0 (it) 1978-10-11

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