JPS5941509B2 - 強付着性の特に硬質炭素層を大きな面積に蒸着するための装置 - Google Patents

強付着性の特に硬質炭素層を大きな面積に蒸着するための装置

Info

Publication number: JPS5941509B2
Authority: JP; Japan
Prior art keywords: hot cathode; substrate; vapor deposition; anode; deposition apparatus
Prior art date: 1979-10-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP13680180A

Other languages

English (en)

Japanese (ja)

Other versions

JPS56102576A (en

Inventor

ヘルム−ト・ボリンゲル

ベルント・ビユツケン

リユ−デイゲル・ウイルベルク

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

BEBU HOOHIBAAKUMU DORESUDEN

Original Assignee

BEBU HOOHIBAAKUMU DORESUDEN

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-10-02

Filing date

1980-10-02

Publication date

1984-10-08

1980-10-02 Application filed by BEBU HOOHIBAAKUMU DORESUDEN filed Critical BEBU HOOHIBAAKUMU DORESUDEN

1981-08-17 Publication of JPS56102576A publication Critical patent/JPS56102576A/ja

1984-10-08 Publication of JPS5941509B2 publication Critical patent/JPS5941509B2/ja

Status Expired legal-status Critical Current

Links

229910021385 hard carbon Inorganic materials 0.000 title claims description 6
238000000151 deposition Methods 0.000 title claims description 3
239000000853 adhesive Substances 0.000 title 1
230000001070 adhesive effect Effects 0.000 title 1
239000000758 substrate Substances 0.000 claims description 33
238000007740 vapor deposition Methods 0.000 claims description 8
230000005855 radiation Effects 0.000 claims description 5
230000008020 evaporation Effects 0.000 claims 1
238000001704 evaporation Methods 0.000 claims 1
239000007789 gas Substances 0.000 description 11
150000002500 ions Chemical class 0.000 description 10
UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
229910052799 carbon Inorganic materials 0.000 description 4
239000000463 material Substances 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
-1 carbon ions Chemical class 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
238000010891 electric arc Methods 0.000 description 2
239000002245 particle Substances 0.000 description 2
102100022704 Amyloid-beta precursor protein Human genes 0.000 description 1
241000276573 Cottidae Species 0.000 description 1
101000823051 Homo sapiens Amyloid-beta precursor protein Proteins 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
238000005299 abrasion Methods 0.000 description 1
DZHSAHHDTRWUTF-SIQRNXPUSA-N amyloid-beta polypeptide 42 Chemical compound C([C@@H](C(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@H](C(=O)NCC(=O)N[C@@H](CO)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CCCCN)C(=O)NCC(=O)N[C@@H](C)C(=O)N[C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](C(C)C)C(=O)NCC(=O)NCC(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C)C(O)=O)[C@@H](C)CC)C(C)C)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@@H](NC(=O)[C@H](CC(C)C)NC(=O)[C@H](CCCCN)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@@H](NC(=O)[C@H](CCC(O)=O)NC(=O)[C@H](CC=1C=CC(O)=CC=1)NC(=O)CNC(=O)[C@H](CO)NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@H](CCCNC(N)=N)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CCC(O)=O)NC(=O)[C@H](C)NC(=O)[C@@H](N)CC(O)=O)C(C)C)C(C)C)C1=CC=CC=C1 DZHSAHHDTRWUTF-SIQRNXPUSA-N 0.000 description 1
230000004323 axial length Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000001311 chemical methods and process Methods 0.000 description 1
238000013329 compounding Methods 0.000 description 1
238000010276 construction Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
230000002452 interceptive effect Effects 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000000034 method Methods 0.000 description 1
238000002715 modification method Methods 0.000 description 1
238000009832 plasma treatment Methods 0.000 description 1
239000012495 reaction gas Substances 0.000 description 1
238000013341 scale-up Methods 0.000 description 1
239000010959 steel Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Plasma & Fusion (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Physics & Mathematics (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Physical Vapour Deposition (AREA)

JP13680180A 1979-10-02 1980-10-02 強付着性の特に硬質炭素層を大きな面積に蒸着するための装置 Expired JPS5941509B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DD21595179A DD146307A1 (de)	1979-10-02	1979-10-02	Einrichtung zur grossflaechigen haftfesten abscheidung,insbesondere von kohlenstoffschichten
DD23G/21595		1979-10-02

Publications (2)

Publication Number	Publication Date
JPS56102576A JPS56102576A (en)	1981-08-17
JPS5941509B2 true JPS5941509B2 (ja)	1984-10-08

Family

ID=5520396

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP13680180A Expired JPS5941509B2 (ja)	1979-10-02	1980-10-02	強付着性の特に硬質炭素層を大きな面積に蒸着するための装置

Country Status (4)

Country	Link
JP (1)	JPS5941509B2 (de)
CH (1)	CH653708A5 (de)
DD (1)	DD146307A1 (de)
DE (1)	DE3030454C2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4504519A (en) *	1981-10-21	1985-03-12	Rca Corporation	Diamond-like film and process for producing same
DE3246361A1 (de) *	1982-02-27	1983-09-08	Philips Patentverwaltung Gmbh, 2000 Hamburg	Kohlenstoff enthaltende gleitschicht
US6795929B2 (en)	1990-03-23	2004-09-21	Matsushita Electric Industrial Co., Ltd.	Data processing apparatus
JPH0560537U (ja) *	1992-01-22	1993-08-10	弘小川	厨房用塵芥処理装置
JP4080503B2 (ja)	2005-10-03	2008-04-23	中部日本マルコ株式会社	非接触コネクタ

1979
- 1979-10-02 DD DD21595179A patent/DD146307A1/de not_active IP Right Cessation
1980
- 1980-08-12 DE DE19803030454 patent/DE3030454C2/de not_active Expired
- 1980-10-02 JP JP13680180A patent/JPS5941509B2/ja not_active Expired
- 1980-10-02 CH CH737480A patent/CH653708A5/de not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPS56102576A (en)	1981-08-17
DD146307A1 (de)	1981-02-04
CH653708A5 (en)	1986-01-15
DE3030454A1 (de)	1981-04-16
DE3030454C2 (de)	1987-04-02

Publication	Publication Date	Title
US6570172B2 (en)	2003-05-27	Magnetron negative ion sputter source
US3625848A (en)	1971-12-07	Arc deposition process and apparatus
US4006073A (en)	1977-02-01	Thin film deposition by electric and magnetic crossed-field diode sputtering
US3836451A (en)	1974-09-17	Arc deposition apparatus
JPH02285072A (ja)	1990-11-22	加工物表面のコーティング方法及びその加工物
JPS5845892B2 (ja)	1983-10-13	スパツタ蒸着装置
JP2001190948A (ja)	2001-07-17	表面をプラズマ処理する方法及び装置
JP5464800B2 (ja)	2014-04-09	スパッタリング装置及び成膜方法
US3492215A (en)	1970-01-27	Sputtering of material simultaneously evaporated onto the target
US4209552A (en)	1980-06-24	Thin film deposition by electric and magnetic crossed-field diode sputtering
JPH05331640A (ja)	1993-12-14	イオン化蒸着装置
JPS5941509B2 (ja)	1984-10-08	強付着性の特に硬質炭素層を大きな面積に蒸着するための装置
US7476302B2 (en)	2009-01-13	Apparatus and method to deposit magnesium oxide film on a large area
JP2023175267A (ja)	2023-12-12	イオンプレーティング装置および方法
JP2526182B2 (ja)	1996-08-21	化合物薄膜の形成方法及び装置
JP2849831B2 (ja)	1999-01-27	プラズマｃｖｄ装置
RU2065890C1 (ru)	1996-08-27	Устройство для получения защитно-декоративных покрытий в вакууме ионно-плазменным напылением
Akan et al.	2003	Variation in thickness of copper films deposited at various distances and angles using the thermionic vacuum arc
JPS63458A (ja)	1988-01-05	真空ア−ク蒸着装置
JPH0250954A (ja)	1990-02-20	薄膜形成装置
JPH0645871B2 (ja)	1994-06-15	反応性イオンプレーティング方法
JP3305655B2 (ja)	2002-07-24	プラズマｃｖｄ装置
JP2002053955A (ja)	2002-02-19	イオン化成膜装置及びイオン化成膜方法
JPH042769A (ja)	1992-01-07	イオンプレーティング装置
JPS59226176A (ja)	1984-12-19	イオンプレ−テイング装置