JPS5945603B2 - Method for producing homogeneous inorganic mass - Google Patents
Method for producing homogeneous inorganic massInfo
- Publication number
- JPS5945603B2 JPS5945603B2 JP50042455A JP4245575A JPS5945603B2 JP S5945603 B2 JPS5945603 B2 JP S5945603B2 JP 50042455 A JP50042455 A JP 50042455A JP 4245575 A JP4245575 A JP 4245575A JP S5945603 B2 JPS5945603 B2 JP S5945603B2
- Authority
- JP
- Japan
- Prior art keywords
- melting
- molten
- melting chamber
- raw material
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000002844 melting Methods 0.000 claims description 38
- 230000008018 melting Effects 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 22
- 238000001816 cooling Methods 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims description 13
- 239000012768 molten material Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000005350 fused silica glass Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000002485 combustion reaction Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 235000004347 Perilla Nutrition 0.000 description 1
- 244000124853 Perilla frutescens Species 0.000 description 1
- 206010040925 Skin striae Diseases 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】
本発明は均質な棒状溶融シリカ溶塊の製造法に係り、詳
しくは、ガス加熱炉により均質でしかも種々の寸法なら
びに形状の溶融シリカ溶塊が連続的に製造できる製造法
に係る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a homogeneous rod-shaped molten silica ingot, and more specifically, a method for producing a homogeneous fused silica ingot of various sizes and shapes using a gas heating furnace. Pertaining to law.
溶融シリカの溶塊は連鋳用浸漬ノズルや、コークス炉等
の耐火物材料としての需要が増大し、二酸化ケイ素原料
を電気炉やガス加熱炉等で溶融して工業的に量産されて
いる。Molten silica ingots are increasingly in demand as refractory materials for continuous casting immersion nozzles and coke ovens, and are now industrially mass-produced by melting silicon dioxide raw materials in electric furnaces, gas heating furnaces, and the like.
しかし、電気炉、とくに、誘導加熱によって製造する場
合は、設備が大型化し、高価な電気エネルギーを大量に
使用することになって経済性で問題がある。However, when manufacturing using an electric furnace, particularly by induction heating, the equipment becomes large and a large amount of expensive electrical energy is used, which poses problems in terms of economy.
また、ガス加熱炉は設備的制約がなく小さいものでも高
温が得られるが、製造される溶融シソ力は物理的にはほ
とんど問題がないにも拘らず、原料粒子間や溶塊の内部
に不均一に空隙が残存しており、空隙のない部分の組織
でも脈理や粒状組織が認められ、均一な溶塊になってい
る溶融シリカは仲々得られない。In addition, gas heating furnaces have no equipment restrictions and can achieve high temperatures even with small ones. Voids remain uniformly, striae and granular structures are observed even in areas without voids, and it is difficult to obtain fused silica in the form of a uniform molten lump.
窯業原料用として用いる場合には、粉砕、粒度配合し、
成形焼成して成形体を得るため、問題にならないが、そ
のまま溶融体を機械加工や熱加工により工業製品に成形
する場合に大きな空隙が残り、内部歪のために亀裂が発
生して使用できない問題が発生する。When used as a raw material for ceramics, it is crushed, mixed with particle size,
This is not a problem because the molded body is obtained by molding and firing, but when the molten body is directly molded into industrial products by machining or thermal processing, large voids remain and cracks occur due to internal strain, making it unusable. occurs.
このため、従来から、ガス加熱炉により均質な溶融シソ
力の製造法が研究され、その一つの例として特公昭46
−4211号公報に記載される製造法等が提案されてい
る。For this reason, methods for producing homogeneous molten perilla using a gas heating furnace have been researched for some time, and one example of this is the
A manufacturing method described in Japanese Patent No. 4211 has been proposed.
しかしながら、この製造法は形状が不規則でかつ大きな
ものができにくいうえに、その製造に非常に時間がかか
るのが欠点であった。However, this manufacturing method has the disadvantage that it is difficult to produce large and irregular shapes, and it takes a very long time to manufacture.
すなわち、この製造法は、粉状石英原料をバーナの焦点
で溶融し、この溶融層を順次に積み上げて溶融シリカを
製造する方法である。That is, this manufacturing method is a method of manufacturing fused silica by melting a powdered quartz raw material at the focal point of a burner and stacking the molten layers one after another.
しかし、この方法では溶融されるのはバーナの焦点部分
のみで、小範囲の点溶融であるため、原料の溶融に時間
がかかり、量産に適さない。However, in this method, only the focal point of the burner is melted, and the point melting is in a small area, so it takes time to melt the raw material, making it unsuitable for mass production.
また、この製造法は溶融層を回転体として回転溶融層の
偏心部分にバーナの焦点を結ばせて所要寸法のシリカ溶
融体を形成している。Further, in this manufacturing method, the molten layer is used as a rotating body, and a burner is focused on an eccentric portion of the rotating molten layer to form a silica melt of a required size.
この場合でも、溶融シリカの寸法は回転溶融層の中心軸
とバーナ焦点間の距離に規制されるため、大きな寸法の
溶融体が得られない。Even in this case, the dimensions of the fused silica are limited by the distance between the central axis of the rotating molten layer and the focus of the burner, so a molten body with large dimensions cannot be obtained.
本発明は上記欠点の解決を目的とし、特に、ガス加熱炉
によって原料を溶融して棒状の溶融シリカを製造する際
に、均質な溶融シリカ溶塊が連続的かつ経済的に製造で
きる方法を提案する。The present invention aims to solve the above-mentioned drawbacks, and particularly proposes a method that can continuously and economically produce a homogeneous molten silica ingot when producing rod-shaped fused silica by melting raw materials in a gas heating furnace. do.
以下、本発明方法について詳しく説明する。The method of the present invention will be explained in detail below.
まず、第1図において符号1はガス加熱炉を示し、この
加熱炉1の内部には溶融室7が形成され、その天井部に
貫通孔2を形成する。First, in FIG. 1, reference numeral 1 indicates a gas heating furnace, and a melting chamber 7 is formed inside the heating furnace 1, and a through hole 2 is formed in the ceiling portion of the melting chamber 7.
この貫通孔2に合わせて多重管バーナ3を設け、このバ
ーナ3は水素ならびに酸素を供給すると共に、二酸化ケ
イ素の原料を供給する。A multi-tube burner 3 is provided in line with this through hole 2, and this burner 3 supplies hydrogen and oxygen as well as a raw material for silicon dioxide.
すなわち、バーナ3は第2図に示す如く中心筒4とその
周囲の2個の環状管5,6から構成し、中心筒4の周囲
に同心円状に内側環状管5ならびに外側環状管6を配置
する。That is, as shown in FIG. 2, the burner 3 is composed of a central tube 4 and two annular tubes 5 and 6 surrounding it, and an inner annular tube 5 and an outer annular tube 6 are arranged concentrically around the central tube 4. do.
この中心筒4から径0.1〜1. OmmffN度の酸
化ケイ素原料粉を連続的に加熱炉の溶融室7内に供給し
、後記の如く、溶融体8の平坦溶融表面8a上に均一に
分散するよう散布する。The diameter from this central cylinder 4 is 0.1 to 1. Silicon oxide raw material powder having a degree of OmmffN is continuously supplied into the melting chamber 7 of the heating furnace, and is spread so as to be uniformly dispersed on the flat melting surface 8a of the melt 8 as described later.
また、内側環状管5から水素を燃料として供給し、更に
、外側環状管6からは酸素を供給し、水素と酸素を溶融
室7の全域で拡散接触燃焼させ、この際、溶融室7の側
壁部に対称的に設けられた一対の排気口9a、9bから
の排気量を例えばダンパー等によって制御して、溶融室
7の全域を1800〜2300℃の高温に加熱しかつ保
持する。Further, hydrogen is supplied as a fuel from the inner annular pipe 5, and oxygen is further supplied from the outer annular pipe 6, and the hydrogen and oxygen are diffused and catalyzed in the entire area of the melting chamber 7, and at this time, the side wall of the melting chamber 7 The entire area of the melting chamber 7 is heated and maintained at a high temperature of 1800 to 2300° C. by controlling the amount of exhaust from a pair of exhaust ports 9a and 9b symmetrically provided in the melting chamber 7, for example, by a damper or the like.
また、中心筒4の先端から供給される原料粉を分散する
際に、第2図に示すように、バーナの中心筒4の先端の
噴出口に角錐状若しくは円錐状の分散チップ10を取付
げてその周囲は開口させ、分散チップ10によって原料
粉は拡げて分散させる。Furthermore, when dispersing the raw material powder supplied from the tip of the center tube 4, a pyramid-shaped or conical dispersion tip 10 is attached to the spout at the tip of the center tube 4 of the burner, as shown in FIG. The area around it is opened, and the raw material powder is spread and dispersed by the dispersion chip 10.
このように供給すると、原料粉は溶融室7内の溶融体8
0表面8aに均一に分散させて連続的に供給され、原料
がこの溶融表面に接触するとただちに溶融される。When supplied in this way, the raw material powder flows into the melt 8 in the melting chamber 7.
The raw material is continuously supplied in a uniformly dispersed manner to the melting surface 8a, and as soon as the raw material comes into contact with this melting surface, it is melted.
更に、溶融時には、溶融体8の気孔率を所定値以下にす
るために、溶融表面8aのレベルを一定の価に保持する
。Furthermore, during melting, the level of the melting surface 8a is maintained at a constant level in order to keep the porosity of the melt 8 below a predetermined value.
また、原料粉は粒径を0.1〜1.0mm程度にするの
は粒径がこれ以下のときは加熱炉外への飛散し易く、L
Omm以上のときは溶融表面8aの接触により順次に接
触できないからである。In addition, the particle size of the raw material powder should be about 0.1 to 1.0 mm because if the particle size is smaller than this, it will easily scatter outside the heating furnace.
This is because when it is more than Omm, sequential contact cannot be made due to the contact of the melting surface 8a.
以上の如く、原料粉を連続的に供給しかつ溶融i 室7
の全域において溶融表面8aで溶融し、一方において、
その溶融表面8aのレベルを一定に保持した状態で溶融
体8を順次かつ連続的に下降させ、この下降時に溶融体
8を外周から絞ってこの絞り冷却部8bのみで外周から
溶融体8を冷却する。As described above, raw material powder is continuously supplied and melted into chamber 7.
melts at the melting surface 8a over the entire area, while
The molten material 8 is lowered sequentially and continuously while the level of the molten surface 8a is kept constant, and during this descent, the molten material 8 is squeezed from the outer periphery, and the molten material 8 is cooled from the outer periphery only by this squeezed cooling part 8b. do.
このように冷却すると、溶融体8の冷却は外周が絞り冷
却部8bに接触しているときのみであって、この冷却に
よる溶融体80体積はほとんど変化せず、溶融室7内の
溶融状態が多少変化しても溶融体表面8aのレベルは一
定に保たれて均質な溶塊が得られ、また、冷却に供せら
れる絞り冷却部8bの接触面積は小さく局部的であるた
め、溶塊は加熱炉等に付着することなく容易に取出すこ
とができる。When cooled in this way, the melt 8 is cooled only when the outer periphery is in contact with the throttle cooling part 8b, and the volume of the melt 80 due to this cooling hardly changes, and the molten state in the melting chamber 7 is changed. Even if there is some change, the level of the melt surface 8a is kept constant and a homogeneous molten ingot is obtained.Also, since the contact area of the throttle cooling part 8b used for cooling is small and local, the molten ingot is It can be easily taken out without sticking to the heating furnace or the like.
更に詳しく説明すると、溶融体8を局部的に絞ることな
く排出通路1aの側壁を冷却部として全て接触させて冷
却すると、下降の間の冷却効果が太き(、その体積化に
よって溶融表面8aのレベル変化が太き(、溶融シリカ
は温度の降下とともに粘度は急激に増加し、溶融体8が
排出通路1aに固着し、排出が困難になる。To explain in more detail, if the molten material 8 is cooled by making all of the side walls of the discharge passage 1a contact with each other as a cooling part without locally constricting the molten material 8, the cooling effect during descent becomes thicker (by increasing the volume, the molten surface 8a is cooled). The viscosity of fused silica increases rapidly as the temperature decreases, and the molten material 8 sticks to the discharge passage 1a, making it difficult to discharge.
つまり、絞り冷却部がなく排出通路の全壁面を冷却部と
して冷却する場合は、溶融室と排出通路の断面積が同じ
としても、投原量や炉内の燃焼状態、溶融体の降下速度
の変動により容易に溶融面が変動し、溶融状態が変化す
るため均質な溶融体を得ることが困難である。In other words, if there is no throttle cooling section and the entire wall surface of the discharge passage is used as a cooling section, even if the cross-sectional area of the melting chamber and the discharge passage are the same, the amount of charge, the combustion state in the furnace, and the descending speed of the molten material will vary. It is difficult to obtain a homogeneous molten body because the molten surface changes easily due to fluctuations, and the molten state changes.
更に、本発明法の如く、溶融体8の下降時に外周から絞
って冷却する場合には、その絞り冷却部分において溶融
体8の周囲が完全にシールされで、溶融室7内の温度は
容易に高く保持できる。Furthermore, when the molten material 8 is squeezed and cooled from the outer periphery as it descends, as in the method of the present invention, the periphery of the molten material 8 is completely sealed in the squeezed cooling portion, and the temperature inside the melting chamber 7 is easily reduced. Can be held high.
また、絞り冷却の場合は、絞り冷却部で溶融体8の固着
温度以上に保持でき、溶融体の外形は上記の如く変化せ
ず、絞り冷却部の断面は溶融室より小さいため、この面
からも、投原量や炉内の燃焼状態、溶融体の降下速度が
多少変動しても、溶融体80表面レベル8aの変動はき
わめて少なく、均質な溶塊が製造できる。In addition, in the case of throttle cooling, the melt 8 can be maintained at a temperature higher than the fixing temperature in the throttle cooling section, the external shape of the melt does not change as described above, and since the cross section of the throttle cooling section is smaller than the melting chamber, from this surface Also, even if the amount of charge, the combustion state in the furnace, and the rate of descent of the melt vary somewhat, the variation in the surface level 8a of the melt 80 is extremely small, and a homogeneous ingot can be produced.
また、上記の如く、絞って冷却する場合に、第1図に示
す如く、排出通路1aに突起11を突出させ、そこに絞
り冷却部8を設ける。Further, in the case of cooling by throttling as described above, as shown in FIG. 1, a protrusion 11 is made to protrude into the discharge passage 1a, and a throttling cooling section 8 is provided there.
この突起11は耐火物で耐摩性のものから構成し、炉壁
に対し抜差自在若しくは取替自在に構成するのが好まし
い。It is preferable that the protrusion 11 is made of a refractory and wear-resistant material, and is configured to be able to be inserted into and removed from the furnace wall or replaced.
なお、二酸化ケイ素原料をバーナ等によりガス加熱炉で
溶融する場合には、相当高温が必要で、この高温は通常
バーナの焦点若しくはその付近でしか得られない。Note that when the silicon dioxide raw material is melted in a gas heating furnace using a burner or the like, a considerably high temperature is required, and this high temperature is usually only obtained at or near the focal point of the burner.
この点、本発明法においては、ガス加熱炉を下降する溶
融体8の周囲は排出通路において完全にシールされ、原
料粉が溶融される溶融表面8aは溶融室7内で完全に密
閉されているため、水素と酸素の燃焼により溶融室7内
が1800〜2300℃に保持されていると、溶融表面
8aの全域に原料粉を均一に散布するのみですみやかに
溶融し、寸法の大きい溶塊が容易に製造できる。In this regard, in the method of the present invention, the periphery of the melt 8 descending through the gas heating furnace is completely sealed in the discharge passage, and the melting surface 8a where the raw material powder is melted is completely sealed in the melting chamber 7. Therefore, if the temperature inside the melting chamber 7 is maintained at 1800 to 2300°C due to the combustion of hydrogen and oxygen, the raw material powder can be quickly melted by simply scattering it evenly over the entire melting surface 8a, and large molten ingots can be formed. Easy to manufacture.
次に、実施例について説明する。Next, examples will be described.
まず、安定化ジルコニアレンガを用いて第1図に示す通
りのガス加熱炉1を築炉し、この加熱炉において、断面
形状240X340mmの凸段部を構成して突起11と
し、そこに、冷し金により絞り冷却部を設け、溶融室7
は断面形状360×460關のものとした。First, a gas heating furnace 1 as shown in Fig. 1 is constructed using stabilized zirconia bricks, and in this heating furnace, a convex step with a cross-sectional shape of 240 x 340 mm is formed to form a protrusion 11, and a cooling A cooling section made of gold is provided, and the melting chamber 7
The cross-sectional shape was 360×460.
また、この加熱炉の頂部には第2図に示す通りのバーナ
をセットし、このバーナから水素ガス4ONm/時、酸
素ガス2ON m” /時の割合で送給して燃焼し、炉
内温度を1950〜2050℃に保持した。In addition, a burner as shown in Figure 2 is set at the top of this heating furnace, and hydrogen gas is fed from this burner at a rate of 4 ON m/hour and oxygen gas is 2 ON m''/hour for combustion, and the temperature inside the furnace is was maintained at 1950-2050°C.
次に、バーナの中心筒4から粒径1〜0.1 mmの朝
鮮珪石を20kg/時の速度で投原した。Next, Korean silica stone having a grain size of 1 to 0.1 mm was thrown from the central cylinder 4 of the burner at a rate of 20 kg/hour.
この際、朝鮮珪石の溶融は、バーナの先端から400朋
でしかも突起11から上方に150mmのところの位置
に溶融面8aが維持されるよう行なって、断面寸法33
0mm×230mmの溶融シリカの角柱状溶塊を12〜
13cfIL/時の速度で下降させた。At this time, the Korean silica was melted so that the melting surface 8a was maintained at a position 400 mm from the tip of the burner and 150 mm upward from the protrusion 11, and the cross-sectional dimension was 33 mm.
0 mm x 230 mm fused silica prismatic ingot from 12~
It was ramped down at a rate of 13 cfIL/hr.
以上の操作を経て得られた溶塊につき、真気孔率を求め
たところ、3.0〜5.5%であって、十分に均質のも
のであった。When the true porosity of the ingot obtained through the above operations was determined, it was 3.0 to 5.5% and was sufficiently homogeneous.
また、溶塊から実際に板を切り出して溶接加工により成
形品にしたが、全(問題がなく、耐熱容器等の用途にも
供することができた。In addition, plates were actually cut out from the molten ingot and molded by welding, but there were no problems and the product could be used for purposes such as heat-resistant containers.
また、上記のところと同様な方法によって粒径1 mm
1J上の朝鮮珪石と粒径0.1 mm以下の朝鮮珪石と
を溶融して角柱溶塊を製造した。In addition, a particle size of 1 mm was obtained using the same method as above.
A prismatic ingot was produced by melting 1J of Korean silica and Korean silica with a grain size of 0.1 mm or less.
この結果、粒径1間以上のものから得た溶塊ではやや粒
状組織がみられたが、あまり問題がなかった。As a result, some granular structure was observed in the ingots obtained from particles with a particle size of 1 mm or more, but there were no major problems.
また、粒径Q、 1 mm以下のものは排気口の調整を
誤ると多くが飛散し易くなり、同時に加熱炉内での均一
散布にもやや問題が残った。Furthermore, particles with a particle size Q of 1 mm or less tend to scatter if the exhaust port is incorrectly adjusted, and at the same time, there remains a slight problem in uniform dispersion within the heating furnace.
また、上記のところでは炉内温度を1800℃以下に降
下させたところ、溶融温度にややむらが生じ、溶塊の降
下に円滑を欠き易かった。Further, in the above case, when the temperature inside the furnace was lowered to 1800° C. or lower, the melting temperature became slightly uneven, and the descent of the molten ingot tended to be uneven.
また、炉内温度を2300℃以上に上昇させたところ、
炉材が溶損する現象が発生し、炉材が溶融体中に混入し
た。In addition, when the temperature inside the furnace was raised to over 2300℃,
A phenomenon occurred in which the furnace material melted and was mixed into the molten material.
第1図は本発明法を実施する際に使用するガス加熱炉の
一例の断面図、第2図は第1図に示すガス加熱炉のバー
ナの断面図である。
符号1・・・・・・ガス加熱炉、2・・・・・・貫通孔
、3・・・・・・バーナ、4・・・・・・中心筒、5,
6・・・・・・環状管、7・・・・・・溶融室、8・・
・・・・溶融体、8a・・・・・・表面、8b・・・・
・・絞り冷却部、9a、9b・・・・・・排気口、10
・・・・・・分散チップ、11・・・・・・突起。FIG. 1 is a sectional view of an example of a gas heating furnace used in carrying out the method of the present invention, and FIG. 2 is a sectional view of a burner of the gas heating furnace shown in FIG. Code 1...Gas heating furnace, 2...Through hole, 3...Burner, 4...Center cylinder, 5,
6... Annular tube, 7... Melting chamber, 8...
...Melted body, 8a...Surface, 8b...
... Throttle cooling section, 9a, 9b... Exhaust port, 10
...Distributed chip, 11... Protrusion.
Claims (1)
対称的に形成されたガス加熱炉の上部中心部に多重管バ
ーナを設け、このバーナにおいてその中心筒から原料と
して径0.1〜1mmの二酸化ケイ素原料を溶融室内の
溶融体の平坦溶融表面上に全体だわたり均一に分散する
よう、連続的に供給してこの溶融表面において二酸化ケ
イ素原料を溶融する一方、前記中心筒を囲む内側環状管
から水素ガス、この内側環状管を囲む外側環状管から酸
素をそれぞれ溶融室に供給して燃焼させると共に、前記
各排気口からの排気を調整して溶融室内温度を1800
〜2300℃に保持し、更に、固気溶融体は加熱炉の炉
底から連続的に降下させつつ排出し、しかも、この炉底
からの排出時に溶融体の外周に炉底の絞り冷却部のみを
接触させて冷却して溶融体の外周を凝固させ、その後、
外周を空冷することを特徴とする均質な棒状溶融シリカ
溶塊の製造法。1. A multi-tube burner is installed in the upper center of a gas heating furnace which is equipped with a raw material melting chamber inside and a pair of exhaust ports are symmetrically formed in the side wall. ~1 mm of silicon dioxide raw material is continuously fed so as to be uniformly distributed over the entire flat melting surface of the melt in the melting chamber, and the silicon dioxide raw material is melted on this melting surface while surrounding the central cylinder. Hydrogen gas is supplied from the inner annular tube, and oxygen is supplied from the outer annular tube surrounding the inner annular tube to the melting chamber for combustion, and the exhaust from each of the exhaust ports is adjusted to bring the temperature of the melting chamber to 1800.
The temperature is maintained at ~2300°C, and the solid-gas molten material is discharged while being continuously lowered from the bottom of the heating furnace.Moreover, at the time of discharge from the bottom of the furnace, only the constricted cooling part of the bottom of the furnace is placed on the outer periphery of the molten material. The outer periphery of the molten material is solidified by contacting and cooling it, and then
A method for producing a homogeneous rod-shaped fused silica ingot characterized by air cooling the outer periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50042455A JPS5945603B2 (en) | 1975-04-08 | 1975-04-08 | Method for producing homogeneous inorganic mass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50042455A JPS5945603B2 (en) | 1975-04-08 | 1975-04-08 | Method for producing homogeneous inorganic mass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51117194A JPS51117194A (en) | 1976-10-15 |
| JPS5945603B2 true JPS5945603B2 (en) | 1984-11-07 |
Family
ID=12636528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50042455A Expired JPS5945603B2 (en) | 1975-04-08 | 1975-04-08 | Method for producing homogeneous inorganic mass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5945603B2 (en) |
-
1975
- 1975-04-08 JP JP50042455A patent/JPS5945603B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51117194A (en) | 1976-10-15 |
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