JPS5961114A - Manufacture of multilayer magnetic film - Google Patents
Manufacture of multilayer magnetic filmInfo
- Publication number
- JPS5961114A JPS5961114A JP17123682A JP17123682A JPS5961114A JP S5961114 A JPS5961114 A JP S5961114A JP 17123682 A JP17123682 A JP 17123682A JP 17123682 A JP17123682 A JP 17123682A JP S5961114 A JPS5961114 A JP S5961114A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- magnetic film
- magnetic
- opening
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）発明の技術分野
本発明は、フレーノ、メッキ法に係り、とくに側端ｊ７
ｉに磁気的シャント層が設けられている多層磁性膜を製
造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical field of the invention The present invention relates to a freno plating method, and particularly to a side edge j7
The present invention relates to a method for manufacturing a multilayer magnetic film in which a magnetic shunt layer is provided on the i.
（ｂ）技術の背景
磁気記録装置においては、高密度記録情報の書込／再生
が可能のヘッドとして、薄膜型磁気ヘットが用いられる
ようになりつつある。(b) Background of the Technology In magnetic recording devices, thin-film magnetic heads are increasingly being used as heads capable of writing/reproducing high-density recorded information.
このうち、電磁誘導型のＭ成型磁気ヘットは、磁気コア
、誘導コイル等を基板上に薄膜の状態で形成するもので
あって、通當の積層コア型の磁気へノドに比し、量産性
が高く、低コス）・である。Among these, the electromagnetic induction type M-shaped magnetic head has a magnetic core, induction coil, etc. formed in a thin film state on a substrate, and is easier to mass produce than the conventional laminated core type magnetic head. is high and low cost).
（Ｃ）従来技術と問題点
この薄膜型磁気ヘットにおりる磁気コアは、これを構成
する磁性膜の磁化容易軸を一定方向に揃えるために、一
般に、磁性膜と非磁性膜を交互に積層した多層膜構造を
なしている。この場合、該非磁性膜の厚さは、磁性膜間
の静磁相互作用によって該磁性膜内に生ずる反磁界を打
ち消すために０．０１〜０．０５μＷ程度に薄くする必
要がある。(C) Prior art and problems The magnetic core in this thin-film magnetic head is generally made of alternating layers of magnetic and non-magnetic films in order to align the axis of easy magnetization of the magnetic films that make up the core in a certain direction. It has a multilayer film structure. In this case, the thickness of the nonmagnetic film needs to be reduced to about 0.01 to 0.05 μW in order to cancel the demagnetizing field generated within the magnetic film due to magnetostatic interaction between the magnetic films.
上記磁性膜は、磁気特性の点から、通常メッキ法によっ
て成膜されるのであるが、前述のような厚さの非磁性膜
については、これをメッキ法によって得ることは膜厚お
よびその分布の制御の点から困難であるために、蒸着あ
るいはスパソタリング等の方法に頼らざるを得す、その
結果、多隔膜製造工稈が複雑になる欠点があった。The above-mentioned magnetic film is usually formed by a plating method from the viewpoint of magnetic properties, but it is difficult to obtain a non-magnetic film of the thickness mentioned above by a plating method because of the film thickness and its distribution. Since it is difficult to control, it is necessary to rely on methods such as vapor deposition or spasotering, which has the disadvantage that the process for producing multiple membranes becomes complicated.
本発明考らは、多層磁性膜の＋１ｔｌｌ端部に磁気的ソ
ヤンｌ−ＪＭを設りることによって、非磁性膜の厚さに
関−」゛る」二記制約を除き、磁性膜および非研性膜共
にメッキ法によって形成した多層膜を用いた薄膜型硼気
ヘソ１を提案している（特許出願中）。The present invention eliminates the two constraints related to the thickness of the non-magnetic film by providing a magnetic solenoid JM at the +1tll end of the multilayer magnetic film. We have proposed a thin-film type borosilicate 1 using a multilayer film formed by a plating method as well as the abrasive film (patent pending).
（（ｊ）発明の目的
本発明は、上記のような′Ｆｉ膜型磁気ヘノ）に用いる
ための側端部に俳気的シャント層を設りた多１ミ俳性膜
の新規な製造方法を提供することを目的とする。((j) Purpose of the Invention The present invention provides a novel method for manufacturing a multi-layer membrane having a hygroscopic shunt layer provided at the side end for use in the above-mentioned ``Fi membrane type magnetic heme''. The purpose is to provide
（ｅ）発明の構成
本発明は、フレームメッキ法を用いて行・う多層磁性膜
の製造方法において、磁性膜パターン状の開口が設りら
れている第１のフレームを用いて第１１’５目の磁性膜
をメッキした後、第１のフレーム。(e) Structure of the Invention The present invention provides a method for manufacturing a multilayer magnetic film using a frame plating method, in which an 11'5 After plating the eye magnetic film, the first frame.
とは差別的にパターンニングおよび除去が可能な材［ｌ
を用い“ζ〜該開［］ ｔ’＋Ｂ内に第２のフレームを
形成して第２層目の非磁性膜をメッキし、以後該第２の
フレームを除去して磁性膜を、該第２のフレームを形成
した状態で非磁性膜をそれぞれ繰り返してメッキするこ
とを特徴とする。is a material that can be differentially patterned and removed [l
A second frame is formed within "ζ ~ the opening [] t'+B, and a second layer of non-magnetic film is plated. After that, the second frame is removed and a magnetic film is plated on the second frame. This method is characterized in that the non-magnetic film is repeatedly plated on each of the two frames formed.
ＣＩ＞発明の実施例 以下本発明の実施例を図面を参照して説明する。CI>Embodiments of the invention Embodiments of the present invention will be described below with reference to the drawings.
本発明は、フレームメッキ法、すなわち被メツキパター
ンを開口とするフレーム（マスク）を用いて該開口部の
みにメッキを行う方法、によってｆｕｌｌ端邪に磁気シ
ャント層が設りられている多層θシ性膜を得るものであ
る。The present invention is a multilayer θ film in which a magnetic shunt layer is provided at the full edge by a frame plating method, that is, a method in which a frame (mask) with a pattern to be plated as an opening is used to plate only the opening. This is what gives you a sexual membrane.
図（八）〜（Ｆ）は本発明の一実施例であって、ガラス
あるいは樹脂等から成る絶縁性基体ｌの表面にメッキベ
ース２として、例えばパーマロイを蒸着、スパックリン
グ、イオンブレーティング等公知の方法により、約０．
１μｍの厚さに成膜する〔第１図（Ａ）〕。Figures (8) to (F) show an embodiment of the present invention, in which permalloy is deposited as a plating base 2 on the surface of an insulating substrate l made of glass or resin, for example, by vapor deposition, spackling, ion blating, etc. By the method of about 0.
A film is formed to a thickness of 1 μm [Figure 1 (A)].
つぎに、該メッキベース２上に、所定パターン状の開口
を有するフレーム３を形成する。該フレーム３としては
、ポジタイプの熱硬化性のフメトレジスト（例えば米国
シソプレイ社製のＡＺ１３５０Ｊ）を用い、例えば８０
°Ｃでキュアした後、前記開口を設りる部分を露光・現
像し前記開口を設りる。Next, a frame 3 having openings in a predetermined pattern is formed on the plating base 2. As the frame 3, a positive type thermosetting fumetresist (for example, AZ1350J manufactured by Shisoplay Co., Ltd., USA) is used, for example, 80
After curing at °C, the portion where the opening is to be formed is exposed and developed to form the opening.
この後、例えば１）（０°ｃ Ｔ： Ｍキュアし、−ζ
アセトンあるいはキシレン等の溶剤に不溶性とする。After this, for example 1) (0°c T: M cure, -ζ
Insoluble in solvents such as acetone or xylene.
上記のようにし゛ζ形成されたフレーム３の開口部に、
磁性膜４として、例えばパーマロイを約０．１ｐｍの厚
さに、図上矢印６で示される方向の磁場の下でメッキす
る〔図（Ｂ）〕。In the opening of the frame 3 formed as described above,
As the magnetic film 4, permalloy, for example, is plated to a thickness of about 0.1 pm under a magnetic field in the direction indicated by the arrow 6 in the figure [Figure (B)].
つぎに、フレーム３に設けられている開口内に、該開口
より小さい開口が設４ノられるようにしてフレーム７を
形成した後、非磁性膜５として、例えば約０．１μ川な
厚さに銅、金あるいはロジウムのいずれかをメッキする
〔図（Ｃ）〕。Next, the frame 7 is formed such that an opening smaller than the opening is provided in the opening provided in the frame 3, and then the non-magnetic film 5 is formed to a thickness of about 0.1 μm, for example. Plate with either copper, gold or rhodium [Figure (C)].
該フレーム７としては、例えば前記フレーム３に用いた
と同じフォｉ・レジストを用い、これをさらに低温度、
例えば８０℃でキュアして形成させたものでもよいし、
あるいはフレーム３に用いたとは異種のフメトレジスト
であってフレーム３を熔解しない溶剤に対して可溶性の
ものを用いて形成してもよい。For the frame 7, for example, the same photoresist as used for the frame 3 is used, and this is further heated at a lower temperature.
For example, it may be formed by curing at 80°C,
Alternatively, it may be formed using a fumetresist of a different type from that used for the frame 3, which is soluble in a solvent that does not dissolve the frame 3.
またフレーム７に設けられる開口の大きさは、磁性膜端
辺部と非磁性膜端辺部の寸法差、すなわら後に成膜され
る磁性膜の磁気シャント領域の幅が１層分の磁性膜４の
厚さに等しいか、あるいはそれ以上になるように決めら
れる。The size of the opening provided in the frame 7 is determined by the dimensional difference between the edge part of the magnetic film and the edge part of the non-magnetic film, that is, the width of the magnetic shunt region of the magnetic film to be formed later is determined by the magnetic property of one layer. The thickness is determined to be equal to or greater than the thickness of the membrane 4.
上記に続き、例えばアセ１−ンのような溶剤を用いてフ
レーム７を熔解・除芙した後、磁性膜４を再びメッキす
る。この段階で２つの磁性膜４の側端部には磁気シャン
ト領域８が形成され、内磁性１’Ｎ４は磁気的に接合さ
れた状態となっている〔図（Ｄ）〕 。Continuing from the above, after the frame 7 is melted and removed using a solvent such as acetone, the magnetic film 4 is plated again. At this stage, magnetic shunt regions 8 are formed at the side ends of the two magnetic films 4, and the inner magnetic layers 1'N4 are in a magnetically joined state [Figure (D)].
以後、上記と同様にしてフレーム７の形成、非磁性膜５
のメッキ、フレーム７の除去、磁性１＊４のメッキを繰
り返し、その結果、例えば４層の磁性膜４と３層の非磁
性膜５が交互に積層される〔図（Ｅ）〕。Thereafter, the frame 7 is formed and the nonmagnetic film 5 is formed in the same manner as above.
plating, removing the frame 7, and plating with magnetic 1*4 are repeated, and as a result, for example, four layers of magnetic film 4 and three layers of non-magnetic film 5 are alternately laminated [Figure (E)].
最後に、フレーム３を酸素ガスを用いるプラズマエツチ
ングにより選択的に除去し、さらに、多層膜周辺のメッ
キベース２をイオンミル等により除去して、本発明の多
層磁性膜が得られる〔図（Ｆ）） 。Finally, the frame 3 is selectively removed by plasma etching using oxygen gas, and the plating base 2 around the multilayer film is further removed by an ion mill or the like to obtain the multilayer magnetic film of the present invention [Figure (F)] ).
図に示すように、上記の方法によって得られた多Ｊｆｉ
ｒｅｔ性膜においては、すべての磁性膜４はその側端
部に磁気シャント領域８が形成されている。As shown in the figure, the multi-Jfi obtained by the above method
In the ret film, all magnetic films 4 have magnetic shunt regions 8 formed at their side edges.
以上のように、本発明によれば、薄膜型磁気−・ソド用
の多層磁性膜をメッキ法のみによって成膜でき、また成
膜後一括して所定バクーンにエソヂングする必要がなく
、工程数および」１稈所要時間が大幅に低減できる。As described above, according to the present invention, it is possible to form a multilayer magnetic film for a thin-film magnetic field using only the plating method, and there is no need to etch it into a predetermined vacuum after film formation, which reduces the number of steps and ” The time required for one culm can be significantly reduced.
なお、」二記実施例においては、多層磁性膜の製造につ
いて示したが、本発明の主旨はその他の多層膜の製造に
刻しても適用ＤＪ能であることは明らかである。In addition, in the second embodiment, the production of a multilayer magnetic film was described, but it is clear that the gist of the present invention can also be applied to the production of other multilayer films.
（ｇ）発明の効果
本発明によれば、側端部に磁気的シャント領域を設りた
多層磁Ｐ１膜を能率よく製造できる効果がある・(g) Effects of the Invention According to the present invention, there is an effect that a multilayer magnetic P1 film having magnetic shunt regions provided at the side edges can be manufactured efficiently.
図は本発明の一実施例を説明するだめの工程概要図であ
る。
図において、１は絶縁性基体、２はメ・ノキヘース、３
および７はフレーム、４は磁性膜、５は非磁性膜、６は
磁場方向、８は磁気シャント領域ある。
（方式）
％式％）
事件の表示
昭和５７年詩許願第１７１２３６号
１“Ｉｔ ’） ８ ｉ； □工、。８□力ｍ−−−
−補正をする台
１Ｃｆ１との関係 持８Ｔ出願人１．１】所
神奈川県用崎市中原区１小■１中１０１５１１’ｆ地（
５２２）名称富士通株式会社
代 理 人 住所 神奈川県用崎市中原Ｋ
ＩＩＩ・１１１１１１１０１５番地（１）本願明細書
第４頁第１１行目「図」とあるのを「第１図」と補正す
る。
（２）同書第５頁第８行目および第１３行目「図」とあ
るのを「第１図」と補正する０
（３）同書第６頁第１０行目、第１６行目および第２０
行目「図」とあるのを「第１図」と補正する０（４）同
書第７頁第１９行目ないし第２０行目を下記の通シ補正
する。
第１図は本発明の一実施例による工程の各段階における
断面模式図である。
（５）図面第１図を別紙の通り補正する０％ＮＥｌThe figure is a process outline diagram for explaining one embodiment of the present invention. In the figure, 1 is an insulating substrate, 2 is a metal base, and 3
7 is a frame, 4 is a magnetic film, 5 is a non-magnetic film, 6 is a magnetic field direction, and 8 is a magnetic shunt region. (Method) % formula %) Display of incident 1981 Poetry Permit No. 171236 1 “It ') 8 i;
-Relationship with correction platform 1Cf1 8T Applicant 1.1]
1st Elementary School, Nakahara Ward, Yozaki City, Kanagawa Prefecture ■ 101511'f
522) Name Fujitsu Ltd. Agent Address Nakahara K, Yozaki City, Kanagawa Prefecture
Address III-1111111015 (1) On page 4, line 11 of the specification of the present application, the word "Figure" is corrected to read "Figure 1." (2) The text “Figure” in the 8th and 13th lines of page 5 of the same book is amended to read “Fig. 20
The line ``Figure'' is corrected to ``Figure 1.'' 0 (4) The following general correction is made to lines 19 and 20 on page 7 of the same book. FIG. 1 is a schematic cross-sectional view at each stage of a process according to an embodiment of the present invention. (5) 0% NEL correcting Figure 1 of the drawing as shown in the attached sheet.
Claims (1)
おいて、磁性膜パターン状の開口が設ＬＪられている第
１のフレームを用いて第１層目の磁性膜をメッキした後
、第１のフレームとは差別的にパターンニングおよび除
去が可能な利料を用いて、該開口部内に第２のフレーム
を形成して第２層目の非磁性膜をメッキし、以後該第２
のフレームを除去し゛ζ磁性膜を、該第２のフレームを
形成した状態で非磁性膜をそれぞれ繰り返してメッキす
ることを特徴とする多層磁性膜の製造方法In a method for manufacturing a multilayer magnetic film using a frame plating method, after plating a first layer of magnetic film using a first frame in which an opening LJ in the shape of a magnetic film pattern is provided, the first frame is A second frame is formed within the opening and a second layer of non-magnetic film is plated using a material that can be differentially patterned and removed.
A method for manufacturing a multilayer magnetic film, characterized in that the frame is removed and a ζ magnetic film is repeatedly plated, and a non-magnetic film is repeatedly plated with the second frame formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17123682A JPS5961114A (en) | 1982-09-30 | 1982-09-30 | Manufacture of multilayer magnetic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17123682A JPS5961114A (en) | 1982-09-30 | 1982-09-30 | Manufacture of multilayer magnetic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5961114A true JPS5961114A (en) | 1984-04-07 |
Family
ID=15919563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17123682A Pending JPS5961114A (en) | 1982-09-30 | 1982-09-30 | Manufacture of multilayer magnetic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961114A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254412A (en) * | 1989-11-07 | 1991-11-13 | Internatl Business Mach Corp <Ibm> | Magnetic thin film structure and manufacture thereof |
-
1982
- 1982-09-30 JP JP17123682A patent/JPS5961114A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254412A (en) * | 1989-11-07 | 1991-11-13 | Internatl Business Mach Corp <Ibm> | Magnetic thin film structure and manufacture thereof |
| US5331728A (en) * | 1989-11-07 | 1994-07-26 | International Business Machines Corporation | Method of fabricating magnetic thin film structures with edge closure layers |
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