JPS5986103A - High dielectric constant porcelain composition - Google Patents
High dielectric constant porcelain compositionInfo
- Publication number
- JPS5986103A JPS5986103A JP57196469A JP19646982A JPS5986103A JP S5986103 A JPS5986103 A JP S5986103A JP 57196469 A JP57196469 A JP 57196469A JP 19646982 A JP19646982 A JP 19646982A JP S5986103 A JPS5986103 A JP S5986103A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- high dielectric
- composition
- ceramic
- barium titanate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は特に積層セラミックコンデンサのような薄膜誘
電体として利用されるチタン酸バリウム(BaTiOs
)を主体とする高誘電率でかつ緻密なセラミック構造を
有する高誘電率値8濁iff成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is particularly applicable to barium titanate (BaTiOs), which is used as a thin film dielectric material such as multilayer ceramic capacitors.
), which has a high dielectric constant value and a dense ceramic structure.
従来例の構成とその問題点
従来より磁器コンデンサの組成物と[7て、チタン酸バ
リウムを主体とするものが数多く知られている。チタン
酸バリウムは周知のように強誘電性を有する特異ガ物質
で高温では立方晶系のペロプスカイト形の構造を有し、
120℃以下ではC軸が僅かに伸びて正方晶となり、さ
らに0℃付近で斜方晶、−80℃付近で菱面体晶へと変
化する。Conventional Structures and Their Problems Many ceramic capacitor compositions [7] whose main constituent is barium titanate have been known. As is well known, barium titanate is a unique material with ferroelectric properties and has a cubic perovskite structure at high temperatures.
Below 120°C, the C axis is slightly elongated to form a tetragonal crystal, which further changes to an orthorhombic crystal at around 0°C and a rhombohedral crystal at around -80°C.
上記120℃付近の相転移点をキュリ一点というが、こ
のキュリ一点を境にそれより高温で常誘電性を示し、低
温では強誘電性を示す。そして、このキュリ一点におい
て、誘電率が10000と極めて高い値を示す。ここで
、チタン酸バリウムだけでは常温で高誘電率とはなり得
ない。チタン酸バリウムのキュリ一点付近の高誘電率を
低温側に移動させることにより、常温付近で適当な静電
容量を有する小型のコンデンナを実用化することは従来
よりo多く行われている。誘電率のピーク値のあられれ
る温度を移動させる添加剤はシフターと呼ばれ、Ba5
nOs−、5rSnOs 、 Ca5nOs 、 Pb
5nOs 。The above-mentioned phase transition point near 120° C. is called the Curie point, and beyond the Curie point, it exhibits paraelectricity at higher temperatures and exhibits ferroelectricity at lower temperatures. At this Curie point, the dielectric constant exhibits an extremely high value of 10,000. Here, barium titanate alone cannot provide a high dielectric constant at room temperature. By moving the high dielectric constant of barium titanate near the Curie point to the low temperature side, small-sized capacitors having an appropriate capacitance near room temperature have been put into practical use more often than in the past. The additive that shifts the temperature at which the peak value of the dielectric constant occurs is called a shifter, and Ba5
nOs-, 5rSnOs, Ca5nOs, Pb
5nOs.
Cu5nO,s 、 Zn5nO3,CdSnOs等の
スズ酸塩、 BaZrO3゜CaZr0a 、 5rZ
rOs等のジ/L/:7ン酸塩およびSrTiO3゜P
bTiOsのチタン酸塩が一般的に知られ、上記の順に
シフターとしての作用が強い。これらのシフターを利用
したチタン酸バリウム系磁器コンデンサは単板型リード
線付きタイプのものとして利用されてきた。しかしなが
ら、最近積層チップ化技術が進歩し、30〜100μm
程度の誘電体シートが容易に得られ、この薄膜を電極を
挾持する形で幾層も積層したいわゆる積層セラミツクチ
、プコンデンサが種々のエレクトロニクス業界に進出し
てきており、従来の誘電体磁器組成物をこのような積層
用薄膜誘電体として利用されることが多くなっている。Stannates such as Cu5nO,s, Zn5nO3, CdSnOs, BaZrO3゜CaZr0a, 5rZ
Di/L/:7 phosphate such as rOs and SrTiO3゜P
Titanate salts of bTiOs are generally known, and have the strongest effect as a shifter in the order listed above. Barium titanate ceramic capacitors using these shifters have been used as single-plate lead wire type capacitors. However, recently, with the advancement of stacked chip technology, 30 to 100 μm
So-called laminated ceramic sheets and capacitors, which are made by laminating many layers of this thin film with electrodes sandwiched between them, have entered various electronics industries. It is increasingly being used as such a thin film dielectric for lamination.
しかしながら、従来の単板型の磁器コンデンサでは誘電
体の厚みが100μm〜1100001t と厚いが、
積層セラミックコンデンザでは10μm〜2ottmと
薄いため、5〜10倍以上の電界強度を受ける。°しだ
がって、従来の単板型コンデンサに比較して、より電圧
依存性の小さい組成物が要求されている。また、誘電体
層が薄くなるにしたがい、セラミックの構造的な欠陥が
特性に出やすくなるので、結晶粒子が均一でかつ散細で
あることと、空孔が少なくかつ小さいことが要求されて
いる。However, in conventional single-plate ceramic capacitors, the dielectric thickness is as thick as 100 μm to 1,100,001 t.
Since the laminated ceramic capacitor is thin at 10 μm to 2 ottm, it receives an electric field strength of 5 to 10 times or more. Therefore, there is a need for a composition that has less voltage dependence than conventional single-plate capacitors. In addition, as the dielectric layer becomes thinner, structural defects in the ceramic become more likely to appear in the characteristics, so it is required that the crystal grains be uniform and fine, and that the pores be small and small. .
発明の目的
本発明は上記にかんがみ、高誘電率でかつセラミックの
構造欠陥が少なく、電圧依存性の小さい、かつセラS7
りの構造欠陥が少なく、高耐圧な高誘電率磁器組成物を
提供しようとするものである。Purpose of the Invention In view of the above, the present invention provides a ceramic S7 having a high dielectric constant, few structural defects in ceramic, and low voltage dependence.
The present invention aims to provide a high dielectric constant ceramic composition that has few structural defects and has a high withstand voltage.
発明の構成
本発明はチタン酸バリウム (BaTi0 s ) 、
酸化ネオジウム(Nd203)および酸化チタン(Ti
O2)からなる高誘電率磁器組成物である。Structure of the Invention The present invention is based on barium titanate (BaTi0s),
Neodymium oxide (Nd203) and titanium oxide (Ti
It is a high dielectric constant ceramic composition consisting of O2).
実施例の説明
以下、本発明の実施例について詳細に説明する0まず、
チタン酸バリウム(BaTi0 s )を次のように合
成した。すなわち、炭酸バリウム(BaCO5)と酸化
f り/(Ti02)を[Ba〕/(Ti)比が1.0
00±0.006の精度で混合し、11oO〜116o
℃で仮焼後、粉砕して得だ。このBaTi0 sにNd
2O3およびTlO2を(Nd)/(Ti)=−の割合
になるように添加し、混合して後、バインダーを加えて
造粒し、角板状に成型して125o〜1360℃の範囲
で焼成した。この後、銀電極を形成した。DESCRIPTION OF EMBODIMENTS Below, embodiments of the present invention will be described in detail.
Barium titanate (BaTi0s) was synthesized as follows. That is, barium carbonate (BaCO5) and oxidized f ri/(Ti02) are combined at a [Ba]/(Ti) ratio of 1.0.
Mix with an accuracy of 00±0.006, 11oO~116o
After calcining at °C, it is best to crush it. Nd to this BaTi0s
2O3 and TlO2 are added in a ratio of (Nd)/(Ti) = -, mixed, then a binder is added and granulated, formed into a square plate shape and fired at a temperature of 125o to 1360℃. did. After this, a silver electrode was formed.
下記の第1表は各組成における特性を焼成温度毎に示し
だものである。Table 1 below shows the characteristics of each composition at each firing temperature.
(以下余白)
上記第1表から明らかなように、組成屋2,3および4
はEIA規格Y5V特性として利用できることがわかる
。すなわち、第1図に詳細な静電容量変化率を示すよう
に一3o℃〜+86℃の温度範囲で+22係〜−82%
の規格内の変化率(20℃基準)を十分満足し、まだ一
般に市販されているY5V特性磁゛器コンデンサの誘電
率1ωω前後のものと比較して同等の誘電率を示してい
る0第1表の末尾に従来例としてジルコン酸塩添加系の
Y5V特性組成物を示した。セラミックのグレインサイ
ズ(粒径)は本発明の組成物では1〜3/Zmであり、
ポアサイズ(空孔径)が最大3μm前後であるが、従来
例ではグレインサイズ1o〜2oμmと犬きく、ポアサ
イズが最大20μm前後である0
組成A3について第2図に示すような積層セラミックコ
ンデンサを試作した。このものとジlレコン酸塩系の積
層セラミ’7クコンデンサと比較対応した結果を下記の
第2表に示す。尚、第2図において1は誘電体で電極間
の厚さは35μm、2はパラジウム電極、3は端子電極
である。(Left below) As is clear from Table 1 above, Composition Shops 2, 3 and 4
It can be seen that can be used as the EIA standard Y5V characteristic. In other words, as shown in Figure 1, the capacitance change rate is +22% to -82% in the temperature range of -3°C to +86°C.
It fully satisfies the rate of change within the standard (20℃ standard), and still shows a dielectric constant equivalent to that of Y5V characteristic magnetic capacitors generally available on the market, which have a dielectric constant of around 1ωω. At the end of the table, a Y5V characteristic composition containing a zirconate salt is shown as a conventional example. The grain size (particle size) of the ceramic is 1 to 3/Zm in the composition of the present invention,
A multilayer ceramic capacitor as shown in FIG. 2 was prototyped with composition A3, in which the pore size (pore diameter) is about 3 μm at maximum, but in the conventional example, the grain size is 1 to 2 μm, and the pore size is about 20 μm at maximum. The results of a comparison between this and a direconate-based multilayer ceramic '7 capacitor are shown in Table 2 below. In FIG. 2, 1 is a dielectric with a thickness of 35 μm between electrodes, 2 is a palladium electrode, and 3 is a terminal electrode.
(以下余白)
上記第2表から明らかなように従来の2倍の抗折強度と
3倍の破壊電圧を有することが判明した。(The following is a blank space) As is clear from Table 2 above, it was found to have twice the bending strength and three times the breakdown voltage of the conventional one.
発明の効果
以上述べたことから本発明の組成物はグレインが細かく
、ボアの小さい緻密なセラミ’7りが得られ、高誘電率
であり、誘電率の温度変化がEIA規格Y6V特性を満
足する磁器コンデンサ用として、とりわけ積層セラミッ
クコンデンサとしての用途に供することができる。そし
て、従来の約3倍の破壊電圧値を有するため、積層セラ
ミックコンデンサでは誘電体厚みを従来の’/38 度
”!、f 薄くすることが可能であり、静電容量取得範
囲を従来の3倍まで拡大することができるといった特徴
を有している等、産業的価値は極めて高い。Effects of the Invention As described above, the composition of the present invention has fine grains, a dense ceramic with a small bore, a high dielectric constant, and a change in dielectric constant with temperature that satisfies the EIA standard Y6V characteristics. It can be used as a ceramic capacitor, especially as a multilayer ceramic capacitor. Since the breakdown voltage value is about three times that of conventional multilayer ceramic capacitors, the dielectric thickness of multilayer ceramic capacitors can be made thinner by 1/38 degrees than conventional ones, and the capacitance acquisition range can be increased to three times that of conventional ones. Its industrial value is extremely high, as it has the characteristic of being able to expand up to twice as much.
尚、上記実施例ではチタン酸バリウムを合成したが、市
販のチタン酸バリウムを用いてもかまわないものである
。Although barium titanate was synthesized in the above example, commercially available barium titanate may also be used.
第1図は本発明の組成物に関するl冒1電容量の温度変
化率の範囲を示す図、第2図は本発明の組成物を適用し
た積層セラミックコンデンサの断面図である。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
−温 d■ (・C)
第2図
3f I7’FIG. 1 is a diagram showing the range of temperature change rate of capacitance for the composition of the present invention, and FIG. 2 is a sectional view of a multilayer ceramic capacitor to which the composition of the present invention is applied. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure - Temperature d■ (・C) Figure 2 3f I7'
Claims (1)
化ネオジウム(Nd203) −、(7±1)モル部及
び酸化チタン(TiO2) 7±1モル部からなる高誘
電率磁器組成物。A high dielectric constant ceramic composition comprising 100 mol parts of barium titanate (BaTiOs), (7±1) mol parts of neodymium oxide (Nd203) and 7±1 mol parts of titanium oxide (TiO2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57196469A JPS6051207B2 (en) | 1982-11-09 | 1982-11-09 | High dielectric constant porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57196469A JPS6051207B2 (en) | 1982-11-09 | 1982-11-09 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5986103A true JPS5986103A (en) | 1984-05-18 |
| JPS6051207B2 JPS6051207B2 (en) | 1985-11-13 |
Family
ID=16358316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57196469A Expired JPS6051207B2 (en) | 1982-11-09 | 1982-11-09 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6051207B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02267164A (en) * | 1989-04-07 | 1990-10-31 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
| JPH02267163A (en) * | 1989-04-07 | 1990-10-31 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
| US5244851A (en) * | 1991-02-28 | 1993-09-14 | Sanyo Electric Co., Ltd. | Microwave dielectric ceramic composition |
| US5248640A (en) * | 1991-09-25 | 1993-09-28 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
| US5571767A (en) * | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
| JP2011087916A (en) * | 2009-09-28 | 2011-05-06 | Mizuno Corp | Upper structure for football shoe |
-
1982
- 1982-11-09 JP JP57196469A patent/JPS6051207B2/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02267164A (en) * | 1989-04-07 | 1990-10-31 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
| JPH02267163A (en) * | 1989-04-07 | 1990-10-31 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
| US5244851A (en) * | 1991-02-28 | 1993-09-14 | Sanyo Electric Co., Ltd. | Microwave dielectric ceramic composition |
| US5248640A (en) * | 1991-09-25 | 1993-09-28 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
| US5571767A (en) * | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
| JP2011087916A (en) * | 2009-09-28 | 2011-05-06 | Mizuno Corp | Upper structure for football shoe |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6051207B2 (en) | 1985-11-13 |
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