JPS5986214U - スクリ−ンかすの洗浄装置 - Google Patents

スクリ−ンかすの洗浄装置

Info

Publication number
JPS5986214U
JPS5986214U JP13974683U JP13974683U JPS5986214U JP S5986214 U JPS5986214 U JP S5986214U JP 13974683 U JP13974683 U JP 13974683U JP 13974683 U JP13974683 U JP 13974683U JP S5986214 U JPS5986214 U JP S5986214U
Authority
JP
Japan
Prior art keywords
screen
cleaning
tank
washing
scum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13974683U
Other languages
English (en)
Other versions
JPS613444Y2 (ja
Inventor
伏尾　正則
山県　徹生
Original Assignee
日立機電工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立機電工業株式会社 filed Critical 日立機電工業株式会社
Priority to JP13974683U priority Critical patent/JPS5986214U/ja
Publication of JPS5986214U publication Critical patent/JPS5986214U/ja
Application granted granted Critical
Publication of JPS613444Y2 publication Critical patent/JPS613444Y2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
図面は本考案スクリーンかすの洗浄装置を示す一実施例
図である。 １・・・・・・第一の洗浄槽、２・・・・・・高圧ノズ
ル、３・・・・・・第二の洗浄槽、４・・・・・・ドラ
ムスクリーン、５・・・・・・循環回路、６・・・・・
・排水管、７・・・・・・掻揚装置、８・・・・・・脱
水機、９・・・・・・補給回路、１０・・・・・・排水
ビット、１１・・・・・・排水弁、１２・・・・・・オ
ーバーフロー管、Ｐ・・・・・・循環ポンプ。

Claims (1)

    【実用新案登録請求の範囲】
  1. 上位に高圧で洗浄水を槽水面に向って噴射する高圧ノズ
    ルを設けた第一洗浄槽と第二洗浄槽とをドラムスクリー
    ンを挾んで隣接し、ドラムスクリーンよりの洗浄水を第
    一洗浄槽へ戻す循環回路を、第一洗浄槽とドラムスクリ
    ーフ間に設け、且上記ドラムスクリーンを、その回転中
    心を第一洗浄槽の洗浄水面に対比して低くなるよう設け
    ると共に、洗浄後のスクリーンかすを水切りしつつ掻き
    上げ排出するための掻上装置を第二洗浄槽に設け、更ら
    にこの掻揚装置に洗浄されたスクリーンかすの脱水を行
    う脱水機を併設してなるスクリーンかすの洗浄装置。
JP13974683U 1983-09-08 1983-09-08 スクリ−ンかすの洗浄装置 Granted JPS5986214U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13974683U JPS5986214U (ja) 1983-09-08 1983-09-08 スクリ−ンかすの洗浄装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13974683U JPS5986214U (ja) 1983-09-08 1983-09-08 スクリ−ンかすの洗浄装置

Publications (2)

Publication Number Publication Date
JPS5986214U true JPS5986214U (ja) 1984-06-11
JPS613444Y2 JPS613444Y2 (ja) 1986-02-03

Family

ID=30313119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13974683U Granted JPS5986214U (ja) 1983-09-08 1983-09-08 スクリ−ンかすの洗浄装置

Country Status (1)

Country Link
JP (1) JPS5986214U (ja)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7428915B2 (en) 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7430984B2 (en) 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7430984B2 (en) 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7291545B2 (en) 2000-08-11 2007-11-06 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7393765B2 (en) 2002-06-05 2008-07-01 Applied Materials, Inc. Low temperature CVD process with selected stress of the CVD layer on CMOS devices
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7428915B2 (en) 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing

Also Published As

Publication number Publication date
JPS613444Y2 (ja) 1986-02-03

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