JPS5994880A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS5994880A JPS5994880A JP57205647A JP20564782A JPS5994880A JP S5994880 A JPS5994880 A JP S5994880A JP 57205647 A JP57205647 A JP 57205647A JP 20564782 A JP20564782 A JP 20564782A JP S5994880 A JPS5994880 A JP S5994880A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- solar cell
- solar battery
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は薄膜太陽電池素子にダイオードが逆並列接続さ
れた太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solar cell in which a diode is connected in antiparallel to a thin film solar cell element.
太陽電池素子の保護のために、逆バラダイオード接続す
ることが効果のあることは、これまで指摘されてきた。It has been pointed out that connecting a reverse rose diode is effective for protecting solar cell elements.
第1図にこの例を示す。太陽電池1にそれぞれ対応して
ダイオード21に逆並列に接続したものである。ダイオ
ードの順方向電圧は約0.5vであるので太陽電池には
0.5 Vを越える逆バイアスがか〜ることが阻止され
る。太陽電池1が発電状態にあり、開放電圧モードで動
作している場合、ダイオード2に逆バイアスがか〜るこ
とになるから、ダイオードの特性として逆耐圧が太陽電
池の開放電圧より大きいことが重要である。An example of this is shown in FIG. They are connected in antiparallel to diodes 21 corresponding to the solar cells 1, respectively. Since the forward voltage of the diode is approximately 0.5V, the solar cell is prevented from being reverse biased in excess of 0.5V. When solar cell 1 is in a power generation state and operates in open voltage mode, diode 2 will be reverse biased, so it is important that the diode has a reverse breakdown voltage that is greater than the open circuit voltage of the solar cell. It is.
逆耐圧が大きいダイオードを用いればいくつかの直列に
接続された太陽電池素子に対して1つの逆並列接続ダイ
オードで太陽電池の保護を行うことができる。このよう
にダイオードを太陽電池に並並列接続することによって
安定性の大きい太陽電池システム形成できるが、ダイオ
ードを太陽電池モジュール形成の際いちいち組み込むの
は、ダイオードの準備、ろう付は作業等組立てに関して
費用がかさむという問題がある。If a diode with a high reverse breakdown voltage is used, a single anti-parallel connected diode can protect a solar cell from several series-connected solar cell elements. By connecting diodes in parallel to solar cells in this way, it is possible to form a highly stable solar cell system, but incorporating diodes each time when forming a solar cell module requires assembly costs such as preparing the diodes and brazing them. There is a problem that it gets bulky.
薄膜シリコン太陽電池は、ガラス基板等の絶縁基板上に
グルー放電性により任意のサイズ、任意の直列数で形成
することができる。第2図はこの薄膜シリコン太陽電池
10とダイオード20を逆並列接続する方法を模式的に
示したものである。ガラス基板3の上に透明導電膜41
.42を分離して形成する。その上にそれぞれグロー放
電法によってa−8i(7モ/L= 77スシリコン)
層をP形層51,52.1層61 、62、n形層71
、72として適当な厚さに形成する。この形成法は当
業者にとっては公知な方法である。次に金属電極81.
82 ’e蒸着等の方法によって形成し、2ケのダイオ
ード10.20を作成する。逆流防止ダイオードとして
用いるダイオード20ニハ、光のしゃへい膜9を形成す
るが、これは塗料などの不透明膜の印刷によって形成可
能である。この二つのダイオード10.20の金属電極
81と透明電極42、金属電極82と透明電極41を電
気的に接続することによって、太陽電池素子1oと保護
用ダイオード20を逆並列に接続することができる。Thin film silicon solar cells can be formed in any size and in any number of series on an insulating substrate such as a glass substrate using glue discharge properties. FIG. 2 schematically shows a method for connecting the thin film silicon solar cell 10 and the diode 20 in antiparallel. Transparent conductive film 41 on glass substrate 3
.. 42 is separated and formed. On top of that, a-8i (7 mos/L = 77 silicon) was applied using the glow discharge method.
The layers are P-type layers 51, 52.1 layers 61, 62, and n-type layer 71.
, 72 to a suitable thickness. This method of formation is well known to those skilled in the art. Next, metal electrode 81.
82' is formed by a method such as e-evaporation to create two diodes 10 and 20. A light shielding film 9 is formed on the diode 20 used as a backflow prevention diode, which can be formed by printing an opaque film such as paint. By electrically connecting the metal electrode 81 and the transparent electrode 42 and the metal electrode 82 and the transparent electrode 41 of these two diodes 10.20, the solar cell element 1o and the protection diode 20 can be connected in antiparallel. .
本発明はこのような逆並列接続タイオードを含む太陽電
池の製造容易で信頼性の高い構造を提供することを目的
とする。An object of the present invention is to provide an easy-to-manufacture and highly reliable structure of a solar cell including such anti-parallel connected diodes.
この目的は同一基板上に下部電極、接合を有する半導体
層および上部電極が積層されてなる太陽電池素子とそれ
に逆並列接続されるタイオード素子が設けられ、タイオ
ード素子には外光の入射の遮蔽手段を備えたものにおい
て、太陽電池素子がダイオード素子の少な(とも三方を
囲むように配置され、太陽電池素子とダイオード素子ゎ
の接続はそれぞれの下部電極および上部電極を延長して
接触せしめることにより行われることにょっ℃達成され
る。The purpose of this is to provide a solar cell element in which a lower electrode, a semiconductor layer having a junction, and an upper electrode are laminated on the same substrate, and a diode element connected in antiparallel to the solar cell element. In the case where the solar cell element is arranged so as to surround three sides of the diode element, the solar cell element and the diode element are connected by extending the lower electrode and the upper electrode of each to make contact with each other. It will be achieved by being exposed.
以下図を引用して本発明の実施例について説明する。各
図において第2図を含め共通の部分には同一符号が付さ
れている。第3図(a)〜(c)は本発明の第一の実施
例の製造工程を平面図で示し、第4図は第3図(e)の
A−A’線断面図である。先ず、カラス等の絶縁基板3
の上に第3図(a)に示すように透明電極41および4
2のパターニングを行う。次にa−8i 層を1層5
1,1層61.n層71の1−に形成し、第3図<b)
に示すようにa−St層11および12のバターニング
を行う。さらに第3図Cc)に示すように金属電極81
、82のパターンを形成し、その後バターニングの際
のレジストな除去することにより太陽電池ができ上がる
。Embodiments of the present invention will be described below with reference to the drawings. Common parts in each figure, including FIG. 2, are given the same reference numerals. 3(a) to 3(c) are plan views showing the manufacturing process of the first embodiment of the present invention, and FIG. 4 is a sectional view taken along the line AA' in FIG. 3(e). First, an insulating substrate 3 such as a crow
Transparent electrodes 41 and 4 are placed on top of the transparent electrodes 41 and 4 as shown in FIG.
Perform 2 patterning. Next, add 1 layer of a-8i layer 5
1,1 layer61. 1- of the n layer 71, FIG. 3<b)
The a-St layers 11 and 12 are patterned as shown in FIG. Further, as shown in FIG. 3Cc), the metal electrode 81
, 82 are formed, and then the resist during patterning is removed to complete the solar cell.
透明電極41、a−81層11および金属電極81で太
陽電池素子が構成され、透明電極42、a −8ケ層1
2および金属電極82で保護ダイオードが構成される。A solar cell element is constituted by the transparent electrode 41, the a-81 layer 11 and the metal electrode 81, and the transparent electrode 42, the a-8 layer 1
2 and the metal electrode 82 constitute a protection diode.
図示していないが透明絶縁基板3の透明電極42の反対
側に不透明膜を形成することは第2図の場合と同様であ
る。太陽電池素子の金属電極81がダイオードの透明電
極42との接触、ダイオードの金属電極82と太陽電池
素子の透明電極41との接触により太陽電池素子とタイ
オードの逆並列接続が行われている。Although not shown, forming an opaque film on the opposite side of the transparent electrode 42 of the transparent insulating substrate 3 is the same as in the case of FIG. The solar cell element and the diode are connected in antiparallel by the contact between the metal electrode 81 of the solar cell element and the transparent electrode 42 of the diode, and the contact between the metal electrode 82 of the diode and the transparent electrode 41 of the solar cell element.
このように構成することにより、a−8i層の上に形成
される金属電極パターン81 、82がずれても、太陽
電池素子および保護ダイオードのa−8tの9層51、
n層52が金属電極によって短絡されることがなくなる
。従って、ダイオードの三方を太陽電池素子が囲む配置
においてマスク合せの余裕を最小限に切りつめることが
でき、太陽電池の有効面積比率が向上する。With this configuration, even if the metal electrode patterns 81 and 82 formed on the a-8i layer are misaligned, the a-8t nine layers 51 and 9 of the solar cell element and protection diode
The n-layer 52 is no longer short-circuited by the metal electrode. Therefore, in the arrangement in which the diode is surrounded by solar cell elements on three sides, the margin for mask alignment can be minimized, and the effective area ratio of the solar cell is improved.
第5図に第二の実施例を示し、この場合は第3図(b)
の工程でa−8iパターンを形成の際に、光電変換部1
1と保護ダイオード部12を分離して形成しないで連続
したパターン13とするものである。A second embodiment is shown in FIG. 5, and in this case, FIG. 3(b)
When forming the a-8i pattern in the process, the photoelectric conversion part 1
1 and the protection diode part 12 are not formed separately, but are made into a continuous pattern 13.
こうすることによって、金属電極82と透明電極42が
短絡する確率が減少する。なお、a−8i層を連続にし
たために生ずるリークは、a−8iの比抵抗が大きいた
め、高照度下の大電流領域においては問題になることが
少ない。By doing so, the probability that the metal electrode 82 and the transparent electrode 42 will be short-circuited is reduced. Note that leakage caused by making the a-8i layer continuous is unlikely to become a problem in a large current region under high illuminance because the specific resistance of a-8i is large.
第6図(a)〜(e)は第三の実施例で、複数の太陽電
池孝子が直列接続されており、(A)は平面図、(b)
は(a)のB−B’線断面図、(C)はC−C’線断面
図である。透明絶縁基板3の上に設けられた透明電極4
のパターンは第6図(a)では破線で示され、a−8i
層11 、12のパターンは一点鎖線で示されている。Figures 6(a) to 6(e) show a third embodiment in which a plurality of solar cells are connected in series, (A) is a plan view, and (b)
3A is a sectional view taken along the line BB', and FIG. 3C is a sectional view taken along the line CC'. Transparent electrode 4 provided on transparent insulating substrate 3
The pattern of is shown as a dashed line in FIG. 6(a), and the pattern of a-8i
The pattern of layers 11 and 12 is shown in dashed lines.
透明電極4は太陽電池素子と保護ダイオードに共通であ
り、太陽電池素子の金属電極81は次段の太陽電池素子
と保護ダイオードの共通電極4に接続されて、第1図に
示すような直列接続された太陽電池素子とその各々に逆
並列接続された保護タイオードの組み合わせが実現する
。保護ダイオードの光入射側には不透明な樹脂を塗り、
光を遮蔽することは言うまでもない。The transparent electrode 4 is common to the solar cell element and the protection diode, and the metal electrode 81 of the solar cell element is connected to the common electrode 4 of the next solar cell element and the protection diode, forming a series connection as shown in FIG. A combination of solar cell elements and protection diodes connected in antiparallel to each of them is realized. The light incident side of the protection diode is coated with opaque resin.
Needless to say, it blocks light.
第7図は第四の実施例における第三の実施例の第6図(
b)に対応した断面を示し、a S IM 12をa
−8t層11と分離せず、一体のa−8t層13として
形成したものである。a −8t太陽電池の表面抵抗が
小さいので、太陽電池素子、保護タイオード間のリーク
などもほとんど問題にならない。この構造をとることに
より、太陽電池を作るのと同じ工程で保護針Zオードを
つくり込むことができる。Figure 7 is Figure 6 of the third embodiment in the fourth embodiment (
A cross section corresponding to b) is shown, and a S IM 12 is a
The a-8t layer 13 is not separated from the -8t layer 11, but is formed as an integrated a-8t layer 13. Since the surface resistance of the a-8t solar cell is small, leakage between the solar cell element and the protection diode is hardly a problem. By adopting this structure, the protective needle Z-ode can be made in the same process as making solar cells.
また、一つの太陽電池素子に一つの保護ダイオードが設
けられているので、保護タイオー ドに高々太陽電池素
子の開放電圧程度の逆バイアスがかかるにすぎず、太陽
電池出力により保護ダイオードが破壊されることがない
ので安定した出力の太陽電池を得ることができる。In addition, since one protection diode is provided for each solar cell element, the protection diode is only subjected to a reverse bias equal to the open circuit voltage of the solar cell element, and the protection diode may be destroyed by the solar cell output. Therefore, it is possible to obtain solar cells with stable output.
以上述べたように、本発明は薄膜太陽電池素子を逆バイ
アスから保護するためのタイオードを、太陽電池素子に
少なくとも三方を囲まれた区域に太陽電池素子と同一工
程で作成し、同時に電極の延長部を用いて逆並列接続も
完成するようにするもので安定性の大きく、発電有効面
重比率の大きな太陽電池が得られるのでその効果は極め
て大きい。As described above, the present invention creates a diode for protecting a thin-film solar cell element from reverse bias in an area surrounded by the solar cell element on at least three sides in the same process as the solar cell element, and at the same time extends the electrode. The effect is extremely large, as it is possible to complete an anti-parallel connection by using the parts, and a solar cell with high stability and a large effective surface weight ratio for power generation can be obtained.
第1図は太陽電池素子と保護タイオードを逆並列接続し
た回路図、第2図は薄膜シリコン素子において第1図の
回路を具体化した模式図、第3図(a)〜(c)は本発
明の第一の実施例の製造工程を示す平面図、第4図は第
3図(c)のA−A’線断面図、第7図は第四の実施例
の第6図い)に対応する断面図である。
3・・・透明絶縁基板、4,41.42・・・透明電極
、11゜12・・・a−8t層、81.82・・・金属
電極。
才1(21
才2図
4175図41Figure 1 is a circuit diagram in which a solar cell element and a protection diode are connected in antiparallel, Figure 2 is a schematic diagram embodying the circuit in Figure 1 in a thin film silicon element, and Figures 3 (a) to (c) are FIG. 4 is a plan view showing the manufacturing process of the first embodiment of the invention, FIG. 4 is a cross-sectional view taken along the line A-A' in FIG. FIG. 3 is a corresponding cross-sectional view. 3...Transparent insulating substrate, 4,41.42...Transparent electrode, 11°12...A-8T layer, 81.82...Metal electrode. Age 1 (21 years old 2 Figure 4175 Figure 41
Claims (1)
び上部電極が積層されてなる太陽電池素子とそれに逆並
列接続されるダイオード素子が設けられ、ダイオード素
子には外光の入射の遮蔽手段を備えたものにおい【、太
陽電池素子がダイオード素子の少なくとも三方を囲むよ
うに配置され、太陽電池素子とダイオード素子との接続
はそれぞれの下部電極および上部電極l蔦長して接触せ
しめることにより行われることを特徴とする太陽電池。[Claims] 1) A solar cell element in which a lower electrode, a semiconductor layer having a junction, and an upper electrode are laminated on the same substrate, and a diode element connected antiparallel to the solar cell element are provided, and the diode element is provided with an external light source. The solar cell element is arranged so as to surround at least three sides of the diode element, and the connection between the solar cell element and the diode element is made by connecting the lower electrode and the upper electrode with each other. A solar cell characterized in that it is produced by contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57205647A JPS5994880A (en) | 1982-11-24 | 1982-11-24 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57205647A JPS5994880A (en) | 1982-11-24 | 1982-11-24 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5994880A true JPS5994880A (en) | 1984-05-31 |
| JPS6313358B2 JPS6313358B2 (en) | 1988-03-25 |
Family
ID=16510351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57205647A Granted JPS5994880A (en) | 1982-11-24 | 1982-11-24 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994880A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298080A (en) * | 1989-05-12 | 1990-12-10 | Sharp Corp | Solar battery cell |
| EP1030376A1 (en) * | 1999-02-18 | 2000-08-23 | Sharp Kabushiki Kaisha | Solar cell module and solar cell panel |
| JP2008192754A (en) * | 2007-02-02 | 2008-08-21 | Sharp Corp | Thin film solar cell and thin film solar cell module |
| WO2013125397A1 (en) * | 2012-02-20 | 2013-08-29 | 富士電機株式会社 | Solar battery module |
| US8664512B2 (en) | 2011-03-18 | 2014-03-04 | Fuji Electric Co., Ltd. | Photovoltaic module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05319187A (en) * | 1992-05-19 | 1993-12-03 | Mitsubishi Motors Corp | Vehicle exterior protection device |
-
1982
- 1982-11-24 JP JP57205647A patent/JPS5994880A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298080A (en) * | 1989-05-12 | 1990-12-10 | Sharp Corp | Solar battery cell |
| EP1030376A1 (en) * | 1999-02-18 | 2000-08-23 | Sharp Kabushiki Kaisha | Solar cell module and solar cell panel |
| JP2008192754A (en) * | 2007-02-02 | 2008-08-21 | Sharp Corp | Thin film solar cell and thin film solar cell module |
| US8664512B2 (en) | 2011-03-18 | 2014-03-04 | Fuji Electric Co., Ltd. | Photovoltaic module |
| WO2013125397A1 (en) * | 2012-02-20 | 2013-08-29 | 富士電機株式会社 | Solar battery module |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6313358B2 (en) | 1988-03-25 |
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