JPS599539U - Pressure contact semiconductor device - Google Patents
Pressure contact semiconductor deviceInfo
- Publication number
- JPS599539U JPS599539U JP10324382U JP10324382U JPS599539U JP S599539 U JPS599539 U JP S599539U JP 10324382 U JP10324382 U JP 10324382U JP 10324382 U JP10324382 U JP 10324382U JP S599539 U JPS599539 U JP S599539U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- pressure contact
- contact semiconductor
- main surface
- contact type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は、圧接型半導体装置の一例を示す中央 −縦
断面図、第２図及び第３図は、本考案に係る薄円板の実
施例を示す平面図である。
１・・・シリコン半導体ペレット、３・・・アノード電
極ポスト、７・・・カソードメタル、８．２８・・・薄
円板、３０．３１・・・切込み。FIG. 1 is a center-longitudinal sectional view showing an example of a pressure contact type semiconductor device, and FIGS. 2 and 3 are plan views showing an embodiment of a thin disk according to the present invention. DESCRIPTION OF SYMBOLS 1... Silicon semiconductor pellet, 3... Anode electrode post, 7... Cathode metal, 8.28... Thin disk, 30.31... Notch.
Claims (1)
面と当接する電極ポスト間に挿入される温度補償板とな
る薄円板に前記半導体基板の熱膨張、収縮に追従するよ
うに半径方向若しくは円周方向又は両者の組合せによる
切込みを入れたことを特徴とする圧接型半導体装置。 ２ 前記電極ポスト表面に前記薄トシ板とのすべりを良
好にするような硬金属層を設けたことを特徴とする実用
新案登録請求の範囲第１項記載の圧接型半導体装置。[Claims for Utility Model Registration] 1. A thin circular plate serving as a temperature compensating plate inserted between an electrode metal on one main surface of a silicon semiconductor substrate and an electrode post in contact with the main surface, the thermal expansion of the semiconductor substrate, A press-contact type semiconductor device characterized in that a cut is made in a radial direction, a circumferential direction, or a combination of both so as to follow shrinkage. 2. The pressure contact type semiconductor device according to claim 1, wherein a hard metal layer is provided on the surface of the electrode post to improve sliding with the thin edge plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10324382U JPS599539U (en) | 1982-07-09 | 1982-07-09 | Pressure contact semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10324382U JPS599539U (en) | 1982-07-09 | 1982-07-09 | Pressure contact semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS599539U true JPS599539U (en) | 1984-01-21 |
Family
ID=30242986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10324382U Pending JPS599539U (en) | 1982-07-09 | 1982-07-09 | Pressure contact semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599539U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51118371A (en) * | 1975-04-11 | 1976-10-18 | Hitachi Ltd | Semiconductor unit |
| JPS5745974A (en) * | 1980-09-03 | 1982-03-16 | Internatl Rectifier Corp Japan Ltd | Pressure contact type semiconductor device |
-
1982
- 1982-07-09 JP JP10324382U patent/JPS599539U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51118371A (en) * | 1975-04-11 | 1976-10-18 | Hitachi Ltd | Semiconductor unit |
| JPS5745974A (en) * | 1980-09-03 | 1982-03-16 | Internatl Rectifier Corp Japan Ltd | Pressure contact type semiconductor device |
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