JPS60131708A - Nonreduced temperature compensating dielectric porcelain composition - Google Patents
Nonreduced temperature compensating dielectric porcelain compositionInfo
- Publication number
- JPS60131708A JPS60131708A JP24064383A JP24064383A JPS60131708A JP S60131708 A JPS60131708 A JP S60131708A JP 24064383 A JP24064383 A JP 24064383A JP 24064383 A JP24064383 A JP 24064383A JP S60131708 A JPS60131708 A JP S60131708A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- nonreduced
- porcelain composition
- temperature compensating
- dielectric porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(発明の分野)
この発明は温度補償用誘電体磁器組成物、特に(従来の
技術)
□ 従来よシ用いられCいる温度補償用誘電体磁器組成
物−酸化チタレを主成分とし゛〔いた。このうち小型、
大容量の温度補償用磁器コンデンサを作成する場合は次
のようにし′C行なつ°Cいた。DETAILED DESCRIPTION OF THE INVENTION (Field of the Invention) The present invention relates to a dielectric ceramic composition for temperature compensation, particularly (prior art) □ A dielectric ceramic composition for temperature compensation that has conventionally been used - titanium oxide. It was the main ingredient. Of these, small
When making a large-capacity temperature-compensating ceramic capacitor, the following procedure was carried out.
すなわち、グリーンシートの上に電極を印刷し、電極が
端面に交互に門出し、かつ互いに対向するように夛り一
7シート□を重ね合わせ′C積層体としこの積層体を熱
圧着し°C垂気中で1200〜14001c′で焼成L
−(積−コレデンサを得・Cいた。このとき電極材料と
しCは1200〜14001”の高温で空気中で焼成し
°〔も誘電体磁器材料と反応せず、また酸化しない金属
とし゛C白金、白金−パラジウム合金が従来よシ用いら
れ′Cいた。しかしながら、これらの電極材料が製品価
格に占める割合いは30〜50チにもなり、積層コンデ
ンサを低価格にするために大門な1書とな−>’c ’
rた。That is, electrodes are printed on a green sheet, and seven sheets are stacked so that the electrodes are alternately protruding from the end face and facing each other to form a laminate, and this laminate is bonded by thermocompression at °C. Fired in air at 1200-14001c'L
- (Product - Coredensor C was obtained. At this time, the electrode material C was fired in air at a high temperature of 1200 to 14001" [C] and the metal which did not react with the dielectric ceramic material and did not oxidize was C platinum, Conventionally, platinum-palladium alloys have been used.However, these electrode materials account for as much as 30 to 50 pieces of the product price, and it has become an important book in order to lower the cost of multilayer capacitors. na->'c'
It was.
これらの高価な電極材料に代わるものとし゛〔、卑金属
で低−な=ツケルなどを使゛用する方法が知られ′Cい
るが、空気中で焼成すると酸化するため還元性雰囲気中
で焼成する必要があつ丸。As an alternative to these expensive electrode materials, there is a known method of using base metals such as low-density materials, but since they oxidize when fired in air, they must be fired in a reducing atmosphere. Gaatsumaru.
しかしながら、従来4.の誘電体磁器材料では還元性雰
囲気中で焼成すると、酸化チタン(中101)、希土類
元素などが還元され−(Lまい、絶縁抵抗、誘・程本損
失などの電気的特性が著しく劣化し、コンデンサとし′
C使用できなくなるという問題かあつ)゛て二。However, conventionally 4. When dielectric porcelain materials are fired in a reducing atmosphere, titanium oxide (101), rare earth elements, etc. are reduced, and the electrical properties such as L resistance, insulation resistance, and dielectric loss are significantly deteriorated. As a capacitor
There is also the problem of not being able to use C.
この問題を解決したものとし′〔、!特公昭57−37
081号鰺よび・特公昭57−39001号に1開示さ
れた丙のがある。この従来縛術のものはジルコン酸カル
シウムを主体とし〔(おり:’?:または還。Assume that this problem has been resolved′ [,! Tokuko Sho 57-37
There is one disclosed in No. 081 and Japanese Patent Publication No. 57-39001. This traditional binding technique mainly uses calcium zirconate [(ori: '?: or return).
元性雰囲気で焼成し°Cも、比舞抗が10 Ω蔦以。Even when fired in a natural atmosphere at °C, the resistance is less than 10Ω.
上、Q値が6000以上の値を有するものが得られ゛〔
いる。Above, one with a Q value of 6000 or more was obtained.
There is.
しかしながら、この従来技術におい゛〔は、マイナス側
に−120ppm/Cまでの誘電率の温度特性を有する
組成物しか得られず、一般に温度補償用磁器コンデンサ
に必要とされる−750 ppm/rさらには−100
0pp+n/rまでの任意の温度特性を得ることができ
なかった。また、この従来技術は°焼結安定性が悪く、
1350℃から1380rとい、う狭、一度範囲でしか
焼成できないものであった・(発明の目的)
この・清明はこ゛れらの問題に鑑みCなされたものであ
シ、その目的は、中性ま羨は還舛性雰囲気で焼成しCも
、絶縁抵抗や誘電体損失の劣化がなく、しかも一般に温
度補償用磁器コンデンサに必要と3さ些る温席特性舎任
意に得ることができ、かつ従来より広い温度範囲での焼
成が可能な非還元性温度補償用誘電体磁器組成物を提供
することである。However, in this prior art, only a composition having a temperature characteristic of a dielectric constant of up to -120 ppm/C on the negative side can be obtained; is -100
It was not possible to obtain arbitrary temperature characteristics up to 0 pp+n/r. In addition, this conventional technology has poor sintering stability.
It was possible to fire only once in a narrow range from 1350°C to 1380r. (Purpose of the Invention) This Seimei was developed in view of these problems, and its purpose was to It is fired in a reductive atmosphere, and there is no deterioration in insulation resistance or dielectric loss.Furthermore, it is possible to arbitrarily obtain hot-seat characteristics that are three times smaller than those normally required for temperature-compensating porcelain capacitors. An object of the present invention is to provide a non-reducible temperature-compensating dielectric ceramic composition that can be fired in a wider temperature range.
(実循例の、説明) ・ 以下に、この発明を実施例に従つ”C説明干る。(Explanation of actual circulation example)・ The present invention will be described below according to embodiments.
実mi+11゜
あらかじめ、炭酸カルシウム(CaCOj)、炭酸スト
ty7チウA (SrC0,)、二酸化チタy(Tto
、)、酸化ジルコニウム(Zr01 )、酸化マンガン
(MnO,入さらに二酸化硅素(StO,) などの鉱
化剤0.5〜5.0R量部を用意し、第1表に示す組成
比率の磁器組成物が得られるようにAl1合した0この
調合原料を16時時間式混合した。のち乾燥した。これ
を空気中15(1/時間の削合いで昇温し、1000〜
1200c、に2時間保持し゛C,仮焼した。この仮焼
済み粉末にバインダと4し”C1酢酸ビニル5重量−と
仮焼済み粉末と四重、量、の、純1.水を加え”r16
時間湿” 式混合した。これを脱水、乾j#!シ、60
.メツシュの網目を4遇する程度に造粒し°(14,0
uφXL2+gt、の、大きさに750KF/dの圧力
で加圧感形したこのようにし・C得られた成形体を15
0t’/時間の割合いで昇温し、500υ5°〔2時間
保持し”〔バインダを燃梼させ、そののち中性(たとえ
ば窒素)または還元性(たとえば窒素、−水素(0,1
〜58量チ)、窒素−一・俊比炭素(0,1〜5容量チ
))!、囲、気にし、150t/時間の割合いで昇温し
゛(1350でに2時間床持し、そののち自1.然冷却
し・C600℃以下になると投入ダスを止め磁器素体を
取シ出した。Fruit mi+11゜Preliminarily, calcium carbonate (CaCOj), carbonate ty7tiu A (SrC0,), titanium dioxide y (Tto
), zirconium oxide (Zr01), manganese oxide (MnO,), and silicon dioxide (StO,), etc., were prepared in an amount of 0.5 to 5.0 parts, and a porcelain composition having the composition ratio shown in Table 1 was prepared. This blended raw material was mixed for 16 hours to obtain a product.Then, it was dried.The mixture was heated in the air by grinding at a rate of 1/hour to 1,000~1000℃.
It was held at 1200°C for 2 hours and calcined at 1200°C. Add a binder to this calcined powder, add 4 parts by weight of C1 vinyl acetate, 4 parts of the calcined powder, and add 1 part of pure water.
Mixed for 60 minutes, then dehydrated and dried for 60 minutes.
.. Granulate to an extent that the mesh mesh is 4° (14,0
The molded body obtained in this manner was pressure-sensitive molded at a pressure of 750 KF/d to a size of uφXL2+gt.
The temperature is raised at a rate of 0t'/hour, held at 500υ5° for 2 hours, and the binder is combusted.
~ 58 volume CH), Nitrogen-1, Shun ratio carbon (0,1~5 volume CH))! The temperature was raised at a rate of 150t/hour (at 1350℃ for 2 hours, then allowed to cool naturally. When the temperature dropped to below 600℃, the charging was stopped and the porcelain element was taken out. did.
このようにし°c rl C:xれた磁器、ぶ体両面に
20〜30fficeの珀、アルカリを含まない低一点
ガラスフリットを含んだニッケルペーストを塗布し、中
性または還元性雰囲気中800〜1000′cで焼付け
゛〔電極とし、電気的特性を測定し°Cその結果を第1
表、に六44)せ、゛、〔示した。A nickel paste containing 20 to 30 ffice of alkali and a low point glass frit that does not contain alkali is applied to both sides of the porcelain body prepared in this way, and heated to 800 to 1000 ffice in a neutral or reducing atmosphere. Baking at 20°C [use as an electrode, measure the electrical characteristics,
Table, 644), ゛, [shown.
第1表の誘電率の温度−P!1FtiおよびQ値はi
Vrms/1MHgでの値、些抵町a 500 V /
uDc電圧、充電時間2分径?測定値をそれぞれ示した
。Temperature of permittivity in Table 1 - P! 1Fti and Q value are i
Value at Vrms/1MHg, 500 V/
uDc voltage, charging time 2 minutes diameter? The measured values are shown respectively.
なお、誘電率の!度特性は次式よりめた。Furthermore, the dielectric constant! The temperature characteristics were calculated from the following formula.
’ (ppm/C)
C:85t’におけろ誘電率
CzsH25℃における誘電率
なお、表甲※印のものは仔の発明範囲外のものでめシ、
それ以外はすべ°〔発明範囲内のものである0
この発明におい゛Cff1成範囲を1坂定した理由は、
次のと吃りで9る。すなわら、Xとyの少なくとも1万
が0.6以上になると、温度特性が一1000ppm/
r:以−ドとなシ、かつQ値が1500以下となるから
である。また、mが0.85以下ではQ値が著じるしく
低下し、1.30以上では十分に焼結しないからである
。また、M n O! (=z )が(Ca□−より
rX) m(z r 17T i y ) o @の1
iji1.00、に対し′C11、005以下ではQ値
が低下し、0.08以上では比抵抗が1010Ωtm以
下とな暮からである。' (ppm/C) C: Dielectric constant at 85t' CzsH Dielectric constant at 25°C Note that the items marked with * on the front page are outside the scope of my invention.
Everything else is within the scope of the invention. The reason for setting the Cff1 formation range to one slope in this invention is as follows.
I stuttered the next word and got nine. In other words, when at least 10,000 of X and y are 0.6 or more, the temperature characteristic
This is because r: is larger than or equal to C, and the Q value is 1500 or less. Furthermore, if m is less than 0.85, the Q value will decrease significantly, and if m is more than 1.30, sufficient sintering will not occur. Also, M n O! (=z) from (Ca□-
rX) m(z r 17T i y) o @1
This is because when the iji is 1.00, the Q value decreases when it is less than 'C11,005, and when it is more than 0.08, the specific resistance becomes less than 1010 Ωtm.
この実施列かられかるように、この発明によれば、+
15 ppm/cから一1UOOppm/rの間で任意
の温度特曲を得ることができる。As can be seen from this implementation sequence, according to the present invention, +
Any temperature profile between 15 ppm/c and 1 UOOppm/r can be obtained.
実施例2゜
実施例1の試料番号15(発明範囲内)と同一の組成比
率の磁器組成物、すなわち(Ca、、、Sro、o2)
、、、、(Zr11..8”’o、ox )t−)s
+Mn0. t)、02jit部が得られるように実施
列1と同一にし゛C調合原料を準備した。これらの調合
原料を実施例1と同一の処理をした後、1300t’と
1400t”との2とおりの焼成温度で焼成し、2つの
試料(試料番号13−1.13−2 )を得た。Example 2゜Porcelain composition with the same composition ratio as sample number 15 (within the invention range) of Example 1, i.e. (Ca, , Sro, o2)
,,,,(Zr11..8”'o,ox)t-)s
+Mn0. t), and the raw materials for preparation of C were prepared in the same manner as in Example 1 so as to obtain 02jit parts. These mixed raw materials were treated in the same manner as in Example 1, and then fired at two firing temperatures of 1300 t' and 1400 t'' to obtain two samples (sample numbers 13-1.13-2).
こめようにし・C得られた各試料の磁諾素体に実施例1
と同様の方法で電極を設け、さらに実施例1と同様の方
法で電気的特性を測定し、その結果を第2表に示した。Example 1 to the magnetic element of each sample obtained
Electrodes were provided in the same manner as in Example 1, and the electrical characteristics were measured in the same manner as in Example 1. The results are shown in Table 2.
また、参考とし°〔、従来の磁器組成物(Ba、、□C
a ) Zr0s+Mn01 Q、Q5重量部の焼成温
度0.9
変化させた場合の特性変化を第3表に示した。In addition, for reference °[, conventional porcelain compositions (Ba, □C
a) Zr0s+Mn01 Table 3 shows the changes in properties when the firing temperature of Q and Q5 parts by weight was changed by 0.9.
s2表
(”0.Ill Sr0.0! ) 1jli (zr
(1,1111TlG、0! ) 0s+Mn0ffi
0.02慮瀘部
試
番
3
3
第5表
(Bao 、tc aOJ )zro z + u”s
0−05重量部この実施列から明らかなように、この
発明は焼結安定性が良く、1300rから140(lの
広い温度範囲での焼成が可能である。これに対し従来の
磁器組成物は、辷れよシ狭い1350〜1680″Cの
温度範囲でしか焼成が行えず、その範囲をはずれると焼
結しなかったシ、比抵抗の低下を招いたシする。s2 table (”0.Ill Sr0.0!) 1jli (zr
(1,1111TlG, 0!) 0s+Mn0ffi
0.02 Test number 3 3 Table 5 (Bao, tc aOJ) zro z + u”s
0-05 parts by weight As is clear from this example series, the present invention has good sintering stability and can be fired in a wide temperature range from 1300r to 140(l).In contrast, the conventional porcelain composition However, sintering can only be carried out within a narrow temperature range of 1350 to 1680''C, and outside this range, sintering may not occur or the resistivity may decrease.
以上のようにこの発gAKよれば、中性または還元性雰
囲気で焼成し°〔も、比抵抗が101Ω龜以上、q値が
3000以上の値が得られCいる。また誘電率は2Bか
ら108の値を示し、その温度特性は+15 ppm/
cから一1oooppm/7ctでの広い範囲で任意の
ものが得られCいる。しかも、1300Cから1400
t’の広い温度範囲での焼成が可能である。さらに電極
とし′〔ニッケルなどの低両格の卑金稿材料を用いるこ
とができ、安価な温度補償用磁a=ンデンサが得られる
というすぐれた効果を有する。As described above, according to this firing method, a resistivity of 101 Ω or more and a q value of 3000 or more can be obtained even when fired in a neutral or reducing atmosphere. In addition, the dielectric constant shows a value of 2B to 108, and its temperature characteristic is +15 ppm/
C can be obtained in a wide range of 100 ppm/7 ct. Moreover, from 1300C to 1400
Firing is possible over a wide temperature range of t'. Furthermore, a low-grade base metal material such as nickel can be used as the electrode, and an inexpensive temperature-compensating magnetic capacitor can be obtained.
特許出願人 株式会社村田製作所patent applicant Murata Manufacturing Co., Ltd.
Claims (1)
、一般式(Ca、−X8rX)、(ZrX−、Ti、)
Os+’ZMnO。 と表わしたとき、(C’ * −x 8 rx ) m
(Z r 1−y ’T Ly)0、のX + ’I
e mが次に示す範囲にあシ、かつ((a、、srx
)m(Zr、−、Ti、)J、の重1lLOOK対し、
MnO,(=Z)が次に示す重量比からなることを特徴
とする非還元性温度補償用誘電体磁器組成物。 0≦X < 0.6 ′ 0≦y < 0.6 0.85<m<1.30 ′ 0.00 s<z<o、o 8 (重量比)ただし、”
−7がともに0になる場合を除く。[Claims] (Ca8r)(ZrTi)Os and MflO, general formula (Ca, -X8rX), (ZrX-, Ti,)
Os+'ZMnO. When expressed as (C' * - x 8 rx ) m
(Z r 1-y 'T Ly) 0, X + 'I
If e m is in the range shown below, and ((a,, srx
)m(Zr,-,Ti,)J, for the weight of 1lLOOK,
A non-reducible temperature-compensating dielectric ceramic composition comprising MnO, (=Z) in the following weight ratio. 0≦X<0.6'0≦y<0.60.85<m<1.30' 0.00 s<z<o, o 8 (weight ratio) However, "
-Except when both 7 become 0.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24064383A JPS60131708A (en) | 1983-12-19 | 1983-12-19 | Nonreduced temperature compensating dielectric porcelain composition |
| DE19843444982 DE3444982A1 (en) | 1983-12-19 | 1984-12-10 | Non-reducible dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24064383A JPS60131708A (en) | 1983-12-19 | 1983-12-19 | Nonreduced temperature compensating dielectric porcelain composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60131708A true JPS60131708A (en) | 1985-07-13 |
Family
ID=17062546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24064383A Pending JPS60131708A (en) | 1983-12-19 | 1983-12-19 | Nonreduced temperature compensating dielectric porcelain composition |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS60131708A (en) |
| DE (1) | DE3444982A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62180905A (en) * | 1986-02-04 | 1987-08-08 | ティーディーケイ株式会社 | Dielectric porcelain compound |
| JPH01267906A (en) * | 1988-04-20 | 1989-10-25 | Matsushita Electric Ind Co Ltd | dielectric porcelain composition |
| US6335301B1 (en) | 1999-03-30 | 2002-01-01 | Tdk Corporation | Dielectric ceramic composition, electric device and production method thereof |
| KR100324721B1 (en) * | 1998-08-07 | 2002-02-28 | 무라타 야스타카 | Anti-reducing dielectric ceramic composition and monolithic ceramic capacitor using the same |
| US6396681B2 (en) | 2000-04-07 | 2002-05-28 | Murata Manufacturing Co., Ltd. | Nonreducing dielectric ceramic and monolithic ceramic capacitor using the same |
| US6617273B2 (en) | 2000-04-07 | 2003-09-09 | Murata Manufacturing Co., Ltd. | Non-reducing dielectric ceramic, monolithic ceramic capacitor using the same, and method for making non-reducing dielectric ceramic |
| US6962888B2 (en) | 2000-06-29 | 2005-11-08 | Tdk Corporation | Dielectric ceramic composition and electronic device |
| US7157396B2 (en) | 2003-11-28 | 2007-01-02 | Tdk Corporation | Dielectric ceramic composition and method of production and electronic device of the same |
| US7265072B2 (en) | 2003-02-17 | 2007-09-04 | Tdk Corporation | Dielectric ceramic composition and electronic device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0664934B2 (en) * | 1988-12-27 | 1994-08-22 | 三菱電機株式会社 | High frequency dielectric porcelain |
| US6139780A (en) * | 1998-05-28 | 2000-10-31 | Sharp Kabushiki Kaisha | Dynamic random access memories with dielectric compositions stable to reduction |
| US7923395B2 (en) * | 2005-04-07 | 2011-04-12 | Kemet Electronics Corporation | C0G multi-layered ceramic capacitor |
| KR102516760B1 (en) * | 2016-01-05 | 2023-03-31 | 삼성전기주식회사 | Dielectric composition and multilayer ceramic capacitor comprising the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159657A (en) * | 1978-06-07 | 1979-12-17 | Philips Nv | Method of producing dielectric and multiilayer capacitor made of same |
-
1983
- 1983-12-19 JP JP24064383A patent/JPS60131708A/en active Pending
-
1984
- 1984-12-10 DE DE19843444982 patent/DE3444982A1/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159657A (en) * | 1978-06-07 | 1979-12-17 | Philips Nv | Method of producing dielectric and multiilayer capacitor made of same |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62180905A (en) * | 1986-02-04 | 1987-08-08 | ティーディーケイ株式会社 | Dielectric porcelain compound |
| JPH01267906A (en) * | 1988-04-20 | 1989-10-25 | Matsushita Electric Ind Co Ltd | dielectric porcelain composition |
| KR100324721B1 (en) * | 1998-08-07 | 2002-02-28 | 무라타 야스타카 | Anti-reducing dielectric ceramic composition and monolithic ceramic capacitor using the same |
| US6335301B1 (en) | 1999-03-30 | 2002-01-01 | Tdk Corporation | Dielectric ceramic composition, electric device and production method thereof |
| DE10015689C2 (en) * | 1999-03-30 | 2002-07-18 | Tdk Corp | Dielectric ceramic composition, electrical component and method for its production |
| US6396681B2 (en) | 2000-04-07 | 2002-05-28 | Murata Manufacturing Co., Ltd. | Nonreducing dielectric ceramic and monolithic ceramic capacitor using the same |
| US6617273B2 (en) | 2000-04-07 | 2003-09-09 | Murata Manufacturing Co., Ltd. | Non-reducing dielectric ceramic, monolithic ceramic capacitor using the same, and method for making non-reducing dielectric ceramic |
| US6962888B2 (en) | 2000-06-29 | 2005-11-08 | Tdk Corporation | Dielectric ceramic composition and electronic device |
| US7265072B2 (en) | 2003-02-17 | 2007-09-04 | Tdk Corporation | Dielectric ceramic composition and electronic device |
| US7157396B2 (en) | 2003-11-28 | 2007-01-02 | Tdk Corporation | Dielectric ceramic composition and method of production and electronic device of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3444982A1 (en) | 1985-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3346293B2 (en) | Non-reducing dielectric ceramic composition and multilayer ceramic capacitor using the same | |
| JPH01283915A (en) | Multilayer device and its manufacture | |
| JPH03276510A (en) | Porcelain dielectric for temperature compensation | |
| JPS60131708A (en) | Nonreduced temperature compensating dielectric porcelain composition | |
| JPS63126117A (en) | Dielectric ceramic composition for non- reducing temperature compensation | |
| US4607018A (en) | Non-reducible temperature compensation dielectric ceramic composition | |
| JPH0283256A (en) | Dielectric material porcelain composition | |
| JPH02226612A (en) | Dielectric porcelain composition | |
| JP3143922B2 (en) | Non-reducing dielectric ceramic composition | |
| JPS60124306A (en) | Dielectric porcelain composition | |
| JPS612203A (en) | Dielectric porcelain composition | |
| EP0798277B1 (en) | Dielectric ceramic composition | |
| JP2789110B2 (en) | High dielectric constant porcelain composition | |
| JP3064518B2 (en) | Dielectric porcelain composition | |
| JPS6136170A (en) | Dielectric ceramic composition and manufacture | |
| JP3158553B2 (en) | Non-reducing dielectric ceramic composition | |
| JP3134430B2 (en) | Non-reducing dielectric ceramic composition | |
| JPH04367559A (en) | Nonreducible dielectric porcelain composition | |
| JPH0337725B2 (en) | ||
| JP3064519B2 (en) | Dielectric porcelain composition | |
| JP3158569B2 (en) | Non-reducing dielectric ceramic composition | |
| JPS62229603A (en) | Dielectric porcelain compound | |
| JP3158568B2 (en) | Non-reducing dielectric ceramic composition | |
| JPH03276511A (en) | Porcelain dielectric for temperature compensation | |
| JPS61158122A (en) | Conductive paste |