JPS60154394A - 半導体メモリのビツト線負荷 - Google Patents
半導体メモリのビツト線負荷Info
- Publication number
- JPS60154394A JPS60154394A JP59198388A JP19838884A JPS60154394A JP S60154394 A JPS60154394 A JP S60154394A JP 59198388 A JP59198388 A JP 59198388A JP 19838884 A JP19838884 A JP 19838884A JP S60154394 A JPS60154394 A JP S60154394A
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- transistor
- coupled
- column
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 230000015654 memory Effects 0.000 claims description 36
- 238000010168 coupling process Methods 0.000 claims 8
- 238000005859 coupling reaction Methods 0.000 claims 8
- 230000008878 coupling Effects 0.000 claims 7
- 230000004044 response Effects 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 230000006870 function Effects 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 230000003068 static effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000003278 mimic effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53448483A | 1983-09-21 | 1983-09-21 | |
| US534484 | 1983-09-21 | ||
| US633091 | 1984-07-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60154394A true JPS60154394A (ja) | 1985-08-14 |
| JPH036599B2 JPH036599B2 (da) | 1991-01-30 |
Family
ID=24130251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59198388A Granted JPS60154394A (ja) | 1983-09-21 | 1984-09-21 | 半導体メモリのビツト線負荷 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60154394A (da) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247992A (ja) * | 1986-09-29 | 1988-10-14 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 集積メモリ回路 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148442A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Memory unit |
| JPS55132589A (en) * | 1979-03-30 | 1980-10-15 | Fujitsu Ltd | Semiconductor memory unit |
| JPS57117181A (en) * | 1981-11-24 | 1982-07-21 | Hitachi Ltd | Semiconductor load circuit |
-
1984
- 1984-09-21 JP JP59198388A patent/JPS60154394A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148442A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Memory unit |
| JPS55132589A (en) * | 1979-03-30 | 1980-10-15 | Fujitsu Ltd | Semiconductor memory unit |
| JPS57117181A (en) * | 1981-11-24 | 1982-07-21 | Hitachi Ltd | Semiconductor load circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247992A (ja) * | 1986-09-29 | 1988-10-14 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 集積メモリ回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH036599B2 (da) | 1991-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| USRE35154E (en) | Bit line and column circuitry used in a semiconductor memory | |
| US7705677B2 (en) | CMOS amplifiers with frequency compensating capacitors | |
| US4973864A (en) | Sense circuit for use in semiconductor memory | |
| USRE37176E1 (en) | Semiconductor memory | |
| US6515461B2 (en) | Voltage downconverter circuit capable of reducing current consumption while keeping response rate | |
| US6456548B2 (en) | Sense amplifier circuit and semiconductor storage device | |
| US5966319A (en) | Static memory device allowing correct data reading | |
| US4555777A (en) | Sense amplifier circuit for dynamic read/write memory | |
| EP0639000B1 (en) | Flip-flop type amplifier circuit | |
| KR970001344B1 (ko) | 반도체 메모리 장치 | |
| KR0129790B1 (ko) | 개량된 증폭기 회로와 그것을 이용한 반도체 기억장치 | |
| US5323349A (en) | Dynamic semiconductor memory device having separate read and write data bases | |
| US5506522A (en) | Data input/output line sensing circuit of a semiconductor integrated circuit | |
| US6549470B2 (en) | Small signal, low power read data bus driver for integrated circuit devices incorporating memory arrays | |
| US6292418B1 (en) | Semiconductor memory device | |
| KR950008446B1 (ko) | 랜덤 액세스 메모리 소자 | |
| US5715204A (en) | Sense amplifier with hysteresis | |
| JPH01503030A (ja) | 電流検出差動増幅器 | |
| JP2756797B2 (ja) | Fetセンス・アンプ | |
| KR950005171B1 (ko) | 전류 미러 증폭회로 및 그의 구동 방법 | |
| US5724299A (en) | Multiport register file memory using small voltage swing for write operation | |
| JPH09153285A (ja) | 増幅回路および相補型増幅回路 | |
| US6243314B1 (en) | Apparatus for sensing a current direction of an input signal and amplifying the sensed input signal in semiconductor memory device | |
| US4541077A (en) | Self compensating ROM circuit | |
| US6657909B2 (en) | Memory sense amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |