JPS60180197A - Method for manufacturing multilayer printed wiring board - Google Patents
Method for manufacturing multilayer printed wiring boardInfo
- Publication number
- JPS60180197A JPS60180197A JP59035770A JP3577084A JPS60180197A JP S60180197 A JPS60180197 A JP S60180197A JP 59035770 A JP59035770 A JP 59035770A JP 3577084 A JP3577084 A JP 3577084A JP S60180197 A JPS60180197 A JP S60180197A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring pattern
- polyamide
- printed wiring
- photopolymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
- C08G69/265—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids from at least two different diamines or at least two different dicarboxylic acids
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0023—Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Polyamides (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、多層プリント配線板の製造方法、詳しくは、
多層プリント配線板の眉間絶縁膜形成材料として、高分
子鎖中に感光基を含有する高感度の新規な芳香族ポリア
ミドからなり、耐熱性、機械的性質及び電気的性質の優
れた、高感度、高解像度を有し有機溶媒可溶性ポリアミ
ドを感光材料として含む感光性樹脂組成物を用いる、多
層プリント配線板の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for manufacturing a multilayer printed wiring board, in particular,
As a material for forming the glabellar insulating film of multilayer printed wiring boards, it is made of a new highly sensitive aromatic polyamide containing photosensitive groups in the polymer chain, and has excellent heat resistance, mechanical properties, and electrical properties. The present invention relates to a method for manufacturing a multilayer printed wiring board using a photosensitive resin composition having high resolution and containing an organic solvent-soluble polyamide as a photosensitive material.
プリント配線板に搭載する素子及び部品は、従来、能動
素子、受動素子を含めた個別部品が主であったが、技術
の進展に伴い今後はIC,LSIを高密度に搭載する方
向に向かうものと考えられる。従って、プリント配線板
は、その実装形態が複雑で密度の高いものになっていく
傾向にある。Traditionally, the elements and parts mounted on printed wiring boards have mainly been individual parts, including active and passive elements, but as technology advances, the future trend is toward high-density mounting of ICs and LSIs. it is conceivable that. Accordingly, printed wiring boards tend to be more complex and densely packaged.
しかし、従来のプリント配線技術でプリント配線板の高
密度化に対処することは到底不可能であり、新たな高密
度細線回路形成技術及び多層化技術が必要である。However, it is completely impossible to cope with the increase in the density of printed wiring boards using conventional printed wiring technology, and new high-density fine line circuit formation technology and multilayer technology are required.
即ち、例えば、プリント配線板において、布線収容数の
向上をはかるために、従来、メンキスルーホール法によ
る多層化技術が広く応用されてきたが、この技術はラン
ド部分スペースのために回路パターンの配線領域が制限
される欠点がある。That is, for example, in printed wiring boards, in order to increase the number of wires that can be accommodated, multilayer technology using the Menki through-hole method has been widely applied. The disadvantage is that the wiring area is limited.
即ち、上記の従来技術によりプリント配線板の多層化を
行うと、層数が増えると眉間接続のためのスルーホール
数が多くなり、逆に平面内の配線領域が減少する欠点が
ある。従って、従来技術では、層数を10以上に増やし
、線11やスルーホール径を小さくすることは材料的に
も精度的にも限界に達しつつあり、プリント配線板の多
層化には新しい配線技術が要請される。That is, when a printed wiring board is multilayered using the above-mentioned conventional technique, there is a drawback that as the number of layers increases, the number of through holes for connecting between the eyebrows increases, and conversely, the wiring area in a plane decreases. Therefore, with conventional technology, increasing the number of layers to 10 or more and reducing the diameter of wires 11 and through holes is reaching its limits both in terms of materials and precision, and new wiring technology is needed to increase the number of layers in printed wiring boards. is requested.
而して、上記の新しい配線技術として、パイヤホール形
成にフォトファブリケーションを応用した方法、即ち、
絶縁基板上に第1層目の配線パターンを形成し、該配線
パターン上にフォトポリマーの膜を形成した後、該フォ
トポリマーの膜を、露光して光硬化させ、現像し所定位
置にパイヤホールの形成された光硬化膜を形成し、次い
で、上記フォトポリマーの光硬化膜を眉間絶縁膜として
使用して該眉間絶縁膜上及び上記パイヤホール部に第2
層目の配線パターンを形成し、更に上記のフォトポリマ
ーの膜形成工程以下の工程を順次繰り返して多層配線パ
ターンを形成する多層プリント配線板の製造方法が考え
られる。Therefore, as the above-mentioned new wiring technology, there is a method that applies photofabrication to the formation of pie holes, that is,
After forming a first layer wiring pattern on an insulating substrate and forming a photopolymer film on the wiring pattern, the photopolymer film is exposed to light to be photocured and developed to form a pie hole in a predetermined position. The photocured film thus formed is formed, and then a second photocured film of the photopolymer is used as an insulating film between the eyebrows, and a second film is formed on the insulating film between the eyebrows and in the pie hole portion.
A method of manufacturing a multilayer printed wiring board may be considered, in which a multilayer wiring pattern is formed by forming a wiring pattern for each layer, and then sequentially repeating the steps from the photopolymer film forming step described above to form a multilayer wiring pattern.
然し乍ら、上記の方法により多層プリント配線板を製造
するには、上記のフォトポリマーが感光材料としての種
々の適性を具備している他に、眉間絶縁膜の形成能を有
する等の特性を併有していなければならないが、従来の
フォトポリマーは、必ずしも斯る特性を有しておらず、
上記の多層プリント配線板の製造方法に適用し難かった
。However, in order to manufacture a multilayer printed wiring board by the above method, the photopolymer described above must not only have various suitability as a photosensitive material but also have properties such as the ability to form an insulating film between the eyebrows. However, conventional photopolymers do not necessarily have such properties;
It was difficult to apply this method to the above-mentioned method for manufacturing a multilayer printed wiring board.
本発明者等は、フォトファブリケーションの応用による
多層プリント配線板の製造方法及び該製造方法の実施を
可能にするフォトポリマーについて種々検討した結果、
フォトポリマーとして感光基を含有する特定の芳香族ポ
リアミドを用いることにより、充分な工業的価値を有す
る多層プリント配線板を製造できることを見出し本発明
に到達した。The present inventors have conducted various studies on a method for manufacturing a multilayer printed wiring board by applying photofabrication and a photopolymer that enables implementation of the manufacturing method.
The present invention was achieved by discovering that a multilayer printed wiring board having sufficient industrial value can be produced by using a specific aromatic polyamide containing a photosensitive group as a photopolymer.
即ち、本発明は、絶縁基板上に第1層目の配線パターン
を形成し、該配線パターン上にフォトポリマーの膜を形
成した後、該フォトポリマーの膜を、露光して光硬化さ
せ、現像し所定位置にパイヤホールの形成された光硬化
膜を形成し、次いで、上記フォトポリマーの光硬化膜を
眉間絶縁膜として使用して該眉間絶縁膜上及び上記パイ
ヤホール部に第2層目の配線パターンを形成し、更に上
記のフォトポリマーの膜形成工程以下の工程を順次繰り
返して多層配線パターンを形成する多層プリント配線板
の製造方法において、上記フォトポリマーの膜形成を、
下記一般式(I a)で表される構成単位を10モル%
以上有する芳香族ポリアミドが約3〜50重量%の割合
で有機溶媒に熔解5−
されている感光性樹脂組成物を用い、該組成物を配線パ
ターン上に塗布し、乾燥させることにより行うことを特
徴とする多層プリント配線板の製造方法を提供するもの
である。That is, in the present invention, a first layer wiring pattern is formed on an insulating substrate, a photopolymer film is formed on the wiring pattern, and then the photopolymer film is photocured by exposure and developed. Then, a photocured film with pie holes formed therein is formed at a predetermined position, and then, using the photocured film of the photopolymer as an insulating film between the eyebrows, a second layer wiring pattern is formed on the insulating film between the eyebrows and in the part of the pie holes. In the method for manufacturing a multilayer printed wiring board, the steps of forming a photopolymer film and forming a multilayer wiring pattern are formed by sequentially repeating the following steps of forming a photopolymer film.
10 mol% of the structural unit represented by the following general formula (I a)
A photosensitive resin composition in which about 3 to 50% by weight of aromatic polyamide having the above properties is dissolved in an organic solvent is used, and the composition is applied onto a wiring pattern and dried. The present invention provides a method for manufacturing a multilayer printed wiring board characterized by:
(但し、上式中、R1及びR2は水素原子又は反応性有
機化合物の残基を示し、Ar1は芳香族残基を示し、A
r2は感光基を含有する芳香族残基を示す。)以下に本
発明の多層プリント配線板の製造方法について詳述する
。(However, in the above formula, R1 and R2 represent a hydrogen atom or a residue of a reactive organic compound, Ar1 represents an aromatic residue, and A
r2 represents an aromatic residue containing a photosensitive group. ) The method for manufacturing a multilayer printed wiring board of the present invention will be described in detail below.
先ず、本発明の製造方法において用いられる感光性樹脂
組成物について説明する。First, the photosensitive resin composition used in the manufacturing method of the present invention will be explained.
本発明で用いられる感光性樹脂組成物の感光材料である
、前記一般式(I a)で表される構成単位を10モル
%以上、好ましくは20モル%以上、更に好ましくは4
0モル%以上の割合で有する芳香族ポリアミドは、前記
一般式(I a)で表される構成単位を80〜100モ
ル%の割合で有するポリアミドであってもよいが、その
構成単位の6一
他に、次の一般式(I b)で表される構成単位を0〜
90モル%、特に0〜80モル%、更に0〜60モル%
の割合で有する芳香族ポリアミドであってもよい。The photosensitive material of the photosensitive resin composition used in the present invention contains 10 mol% or more, preferably 20 mol% or more, more preferably 4 mol% or more of the structural unit represented by the general formula (Ia).
The aromatic polyamide having a proportion of 0 mol% or more may be a polyamide having a proportion of 80 to 100 mol% of the structural units represented by the general formula (Ia), In addition, the structural unit represented by the following general formula (I b) is 0 to
90 mol%, especially 0-80 mol%, even 0-60 mol%
It may also be an aromatic polyamide having a ratio of .
(但し、上式中、R3及びhは水素原子又は反応性有機
化合物の残基を示し、Ar3及びAr4は芳香族残基を
示す。)
前記一般式(Ia)及び(Ib)においてAr1及びA
r3で示される芳香族残基としては、芳香族ジカルボン
酸の芳香族残基があげられ、該芳香族ジカルボン酸とし
ては、例えば、テレフタル酸、イソフタル酸、4,4”
−ジカルボキシ−ビフェニル、4.4° −ジカルボ
キシ−ジフェニルメタン、4.4゛ −ジカルボキシ−
ジフェニルエーテルなどの芳香族ジカルボン酸とそれら
の酸ハロゲン化物をあげることができる。これらの芳香
族ジカルボン酸成分のうちでも、上記芳香族ジカルボン
酸の酸ハロゲン化物、特に酸塩化物が好ましい。(However, in the above formula, R3 and h represent a hydrogen atom or a residue of a reactive organic compound, and Ar3 and Ar4 represent an aromatic residue.) In the general formulas (Ia) and (Ib), Ar1 and A
Examples of the aromatic residue represented by r3 include aromatic residues of aromatic dicarboxylic acids, such as terephthalic acid, isophthalic acid, 4,4''
-dicarboxy-biphenyl, 4.4°-dicarboxy-diphenylmethane, 4.4°-dicarboxy-
Examples include aromatic dicarboxylic acids such as diphenyl ether and their acid halides. Among these aromatic dicarboxylic acid components, acid halides of the above-mentioned aromatic dicarboxylic acids, particularly acid chlorides, are preferred.
また、前記一般式(I a)において、Ar2で示され
る感光基を含有する芳香族残基としては、感光基を有す
る芳香族ジアミンの芳香族残基があげられ、該芳香族ジ
アミンとしては、例えば、3゜5−ジアミノ安息香酸エ
チルアクリル酸エステル、2.4−ジアミノ安息香酸エ
チルアクリル酸エステル、3.5−ジアミノ安息香酸エ
チルメタクリル酸エステル、2.4−ジアミノ安息香酸
エチルメタクリル酸エステル、3.5−ジアミノ安息香
酸グリシジルアクリレートエステル、2,4−ジアミノ
安息香酸グリシジルアクリレートエステル、3,5−ジ
アミノ安息香酸グリシジルメタクリレートエステル、2
.4−ジアミノ安息香酸グリシジルメタクリレートエス
テル、3,5−ジアミノ安息香酸ケイ皮エステル、2.
4−ジアミノ安息香酸ケイ皮エステルなどの安息香酸エ
ステル類;3,5−ジアミノヘンシルアクリレート、3
゜5−ジアミノベンジルメタクリレート、2.4−ジア
ミノヘンシルアクリレート、2.4−ジアミノベンジル
メタクリレ−1・などのベンジルアクリレート類;4−
アクリルアミド−3,4゛−ジアミノジフェニルエーテ
ル、2−アクリルアミド−3,4”−ジアミノジフェニ
ルエーテル、4−シンナムアミド−3,4゛−ジアミノ
ジフェニルエーテル、3,4°−ジアクリルアミド−3
゛、4−ジアミノジフェニルエーテル、3,4”−ジシ
ンナムアミドー3゛、4−ジアミノジフェニルエーテル
、4−メチル−2゛−カルボキシエチルメタクリル酸エ
ステル−3,4゛−ジアミノジフェニルエーテル〔カル
ボキシエチルメタクリル酸エステルはCH2=C(CH
3)C00CH2CH200C−を示す〕、4−メチル
−2”−カルボキシエチルアクリル酸エステル−3,4
゛−ジアミノジフェニルエーテル〔カルボキシエチルア
クリル酸エステルはCHz=CHCOOC)lzcH2
00cmを示す〕などのジフェニルエーテル類;及び4
,4゛−ジアミノカルコン、3.3゛−ジアミノカルコ
ン、3.4゛−ジアミノカルコン、3” 、4−ジアミ
ノカルコン、4゛−メチル−3゛ 、4−ジアミノカル
コン、4”−メトキシ−3゛ 、4−シア9−
ミノカルコン、3゛−メチル−3,5−ジアミノカルコ
ンなどのカルコン類などをあげることができる。In addition, in the general formula (I a), the aromatic residue containing a photosensitive group represented by Ar2 includes an aromatic residue of an aromatic diamine having a photosensitive group, and the aromatic diamine includes: For example, 3゜5-diaminobenzoic acid ethyl acrylate, 2,4-diaminobenzoic acid ethyl acrylate, 3,5-diaminobenzoic acid ethyl methacrylate, 2,4-diaminobenzoic acid ethyl methacrylate, 3.5-diaminobenzoic acid glycidyl acrylate ester, 2,4-diaminobenzoic acid glycidyl acrylate ester, 3,5-diaminobenzoic acid glycidyl methacrylate ester, 2
.. 4-diaminobenzoic acid glycidyl methacrylate ester, 3,5-diaminobenzoic acid cinnamic ester, 2.
Benzoic acid esters such as 4-diaminobenzoic acid cinnamic ester; 3,5-diaminohensyl acrylate, 3
Benzyl acrylates such as 5-diaminobenzyl methacrylate, 2,4-diaminohensyl acrylate, 2,4-diaminobenzyl methacrylate-1; 4-
Acrylamide-3,4''-diaminodiphenyl ether, 2-acrylamide-3,4''-diaminodiphenyl ether, 4-cinnamamide-3,4''-diaminodiphenyl ether, 3,4°-diacrylamide-3
゛, 4-diaminodiphenyl ether, 3,4''-dicinnamamide 3゛, 4-diaminodiphenyl ether, 4-methyl-2゛-carboxyethyl methacrylate ester-3,4゛-diaminodiphenyl ether [carboxyethyl methacrylate is CH2=C(CH
3) C00CH2CH200C-], 4-methyl-2”-carboxyethyl acrylic acid ester-3,4
゛-Diaminodiphenyl ether [carboxyethyl acrylic acid ester is CHz=CHCOOC) lzcH2
diphenyl ethers such as 00cm; and 4
, 4'-diaminochalcone, 3.3'-diaminochalcone, 3.4'-diaminochalcone, 3", 4-diaminochalcone, 4'-methyl-3', 4-diaminochalcone, 4"-methoxy-3 Examples include chalcones such as 1, 4-thia-9-minochalcone, and 3-methyl-3,5-diaminochalcone.
また、前記一般式(Ib)において、Ar4で示される
芳香族残基としては、感光基を有さない芳香族ジアミン
の芳香族残基があげられ、該芳香族ジアミンとしては、
例えば、パラフェニレンジアミン、メタフェニレンジア
ミン、2.4−ジアミノトルエン、4.4”−ジアミノ
ジフェニルエーテル、4.4゛−ジアミノジフェニルメ
タン、0−トルイジン、1.4−ビス(4−アミノフェ
ノキシ)ベンゼン、2,2゛−ビス(4−アミノフェノ
キシフェニル)プロパン、0−トルイジンスルホンなど
のジアミン、及び9.9−ビス(4−アミノフェニル)
−10−アンスロン、1.5−ジアミノアントラキノン
、1.4−ジアミノアントラキノン、3.3′−ジアミ
ノベンゾフェノン、4’−N、N−ジメチルアミノ−3
,5−ジアミノベンゾフェノン、1−ジメチルアミノ−
4−(3,5−ジアミノベンゾイル)−ナフタレンな1
0−
どのケトン基を含有するジアミンをあげることができる
。これらのうちでも特に、ケトン基を含有するジアミン
がポリアミドの感度、解像度を一層向上させ得るので好
ましい。In addition, in the general formula (Ib), the aromatic residue represented by Ar4 includes an aromatic residue of an aromatic diamine that does not have a photosensitive group, and the aromatic diamine includes:
For example, paraphenylenediamine, metaphenylenediamine, 2.4-diaminotoluene, 4.4''-diaminodiphenyl ether, 4.4''-diaminodiphenylmethane, 0-toluidine, 1.4-bis(4-aminophenoxy)benzene, Diamines such as 2,2′-bis(4-aminophenoxyphenyl)propane, 0-toluidine sulfone, and 9,9-bis(4-aminophenyl)
-10-anthrone, 1.5-diaminoanthraquinone, 1.4-diaminoanthraquinone, 3.3'-diaminobenzophenone, 4'-N,N-dimethylamino-3
, 5-diaminobenzophenone, 1-dimethylamino-
4-(3,5-diaminobenzoyl)-naphthalene 1
0- Which ketone group-containing diamines can be mentioned. Among these, diamines containing ketone groups are particularly preferred because they can further improve the sensitivity and resolution of polyamides.
また、前記一般式(I a)及び(Ib)において、R
1,R2,R3及びR4で示される反応性有機化合物の
残基は、ポリアミドのアミド結合の水素原子に対して反
応性を有する有機化合物(反応性有機化合物)がポリア
ミドのアミド結合の水素原子と置換反応した結果形成さ
れた有機基であり、例えば、アセチル基、アクリロイル
基、メタクリロイル基、シンナモイル基、バラアジドベ
ンゾイル基などをあげることができ、特にアクリロイル
基、メタクリロイル基、シンナモイル基などの感光基を
含有する有機基がポリアミドの感度、解像度を一層向上
させ得るので好ましい。これらの残基を有する反応性有
機化合物としては、例えば、メタクリル酸クロライド、
アクリル酸クロライド、ケイ皮酸クロライド、酢酸クロ
ライド、塩化ベンジル、バラアジド塩化ベンゾイルなど
があげられる。Furthermore, in the general formulas (Ia) and (Ib), R
Residues of reactive organic compounds represented by 1, R2, R3, and R4 are organic compounds (reactive organic compounds) that have reactivity with the hydrogen atoms of the amide bonds of polyamide. It is an organic group formed as a result of a substitution reaction, and examples include an acetyl group, an acryloyl group, a methacryloyl group, a cinnamoyl group, and a barazidobenzoyl group. In particular, a photosensitive group such as an acryloyl group, a methacryloyl group, and a cinnamoyl group. Organic groups containing these are preferred because they can further improve the sensitivity and resolution of the polyamide. Examples of reactive organic compounds having these residues include methacrylic acid chloride,
Examples include acrylic acid chloride, cinnamic acid chloride, acetic acid chloride, benzyl chloride, and benzoyl balaazide chloride.
また、本発明で使用されるポリアミドにおいて、前記一
般式(I b)
存在は、ポリアミドの熱的性質を向上させる効果がある
が、多過ぎると感光基濃度が低くなり光感度が低下する
ので適当ではない。In addition, in the polyamide used in the present invention, the presence of the general formula (Ib) has the effect of improving the thermal properties of the polyamide, but if it is too large, the concentration of photosensitive groups decreases and the photosensitivity decreases, so it is necessary to isn't it.
また、前記芳香族ポリアミドは、ポリアミド0.5g/
N−メチル−2−ピロリドン100m1の濃度の溶液と
して30℃において測定した対数粘度が0.1〜3.5
特に0.2〜2.0の範囲内にあるものが好ましい。Further, the aromatic polyamide has 0.5 g of polyamide/
The logarithmic viscosity measured at 30°C as a solution with a concentration of 100 ml of N-methyl-2-pyrrolidone is 0.1 to 3.5.
Particularly preferred is one within the range of 0.2 to 2.0.
そして、前記ポリアミドは、次のようにして製造するこ
とができる。The polyamide can be manufactured as follows.
即ち、前記ポリアミドにおいて、R1,R2,R3及び
R4が水素原子であるものは、前記Arl (又はAr
3 )を有する芳香族ジカルボン酸成分と、下記一般式
(II)で表される感光基を有する芳香族ジアミン10
0〜10モル%、好ましくは100〜20モル%、更に
好ましくは100〜40モル%、及び下記一般式(II
I)で表される感光基を有さない芳香族ジアミン0〜9
0モル%、好ましくは0〜80モル%、更に好ましくは
0〜60モル%からなる芳香族ジアミン成分とを重縮合
又は共重縮合して重縮合物又は共重縮合物(芳香族ポリ
アミド)を合成することにより得られる。That is, in the above polyamide, when R1, R2, R3 and R4 are hydrogen atoms, the above Arl (or Ar
3) and an aromatic diamine 10 having a photosensitive group represented by the following general formula (II).
0 to 10 mol%, preferably 100 to 20 mol%, more preferably 100 to 40 mol%, and the following general formula (II
Aromatic diamines 0 to 9 having no photosensitive group represented by I)
A polycondensate or a copolycondensate (aromatic polyamide) is obtained by polycondensation or copolycondensation with an aromatic diamine component consisting of 0 mol%, preferably 0 to 80 mol%, more preferably 0 to 60 mol%. Obtained by synthesis.
112N−^r2−NR2(II)
(但し、式中、Ar2は感光基を含有する芳香族残基を
示す。)
R2N−Ar4−N R2(II )
(但し、式中、Ar4は感光基を有さない芳香族残基を
示す。)
上記の合成反応は、有機溶媒中で100℃以下、好まし
くは80℃以下の反応温度で0.1〜48時間重合反応
を行うのが好ましい。112N-^r2-NR2(II) (However, in the formula, Ar2 represents an aromatic residue containing a photosensitive group.) R2N-Ar4-N R2(II) (However, in the formula, Ar4 represents a photosensitive group. The above synthetic reaction is preferably carried out in an organic solvent at a reaction temperature of 100°C or lower, preferably 80°C or lower for 0.1 to 48 hours.
上記重合反応における有機溶媒としては、例えばN、N
−ジメチルスルホキシド、N、N−ジメチルホルムアミ
ド、N、N−ジエチルホルムアミド、N、N−ジメチル
アセトアミド、N、N−ジエチルアセトアミド、N−メ
チル−2−ピロリド=13−
ン、ヘキサメチレンホスホアミドなどが用いられる。As the organic solvent in the above polymerization reaction, for example, N, N
-dimethylsulfoxide, N,N-dimethylformamide, N,N-diethylformamide, N,N-dimethylacetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone, hexamethylenephosphoamide, etc. used.
また、前記芳香族ポリアミドにおいて、R1,R2゜R
3及び−の少なくとも一つが反応性有機化合物の残基で
あるものは、上述の如くして合成したR1゜R2,R3
及び−が水素原子である前記の重縮合物又は共重縮合物
(芳香族ポリアミド)を、その合成反応溶液中に、前述
のR1,R2,R3及びR4に相当する有機基を有する
反応性有機化合物を添加し、=5〜100℃の反応温度
で0.1〜48時間反応させることにより得られる。Further, in the aromatic polyamide, R1, R2゜R
When at least one of 3 and - is a residue of a reactive organic compound, R1゜R2,R3 synthesized as described above
The above polycondensate or copolycondensate (aromatic polyamide) in which and - are hydrogen atoms is added to a reactive organic compound having an organic group corresponding to R1, R2, R3 and R4 in the synthesis reaction solution. It is obtained by adding a compound and reacting at a reaction temperature of =5 to 100°C for 0.1 to 48 hours.
尚、前記芳香族ポリアミドの製造に用いられる、前記一
般式(n)で表される芳香族ジアミンにおいて、ジアミ
ノジフェニルエーテル類、ジアミノ安息香酸エステル類
及びジアミノベンジルアクリレート類は、新規化合物で
あり、その合成法には制限されないが、その好ましい合
成法としては次のような方法をあげることことができる
。Note that among the aromatic diamines represented by the general formula (n) used in the production of the aromatic polyamide, diaminodiphenyl ethers, diaminobenzoic acid esters, and diaminobenzyl acrylates are new compounds, and their synthesis is difficult. Preferred synthesis methods include the following, although the method is not limited.
(11ジアミノジフエニルエーテル類の合成法(モノ又
はジ)アセチルアミドージニトロフェ14−
ニルエーテルを加水分解して得られる(モノ又はジ)ア
ミノ−ジニトロフェニルエーテルと、アクリル酸クロリ
ドなどとを反応させ、次いで反応物を還元することによ
って目的とする芳香族ジアミン化合物を合成する方法を
あげることができる。(11 Synthesis method of diaminodiphenyl ethers) React the (mono- or di)amino-dinitrophenyl ether obtained by hydrolyzing (mono- or di)acetylamide dinitrophe 14-nyl ether with acrylic acid chloride, etc. Then, the target aromatic diamine compound can be synthesized by reducing the reactants.
(2)ジアミノ安息香酸エステル類の合成法ジニトロ安
息香酸クロリドと、ヒドロキシエチルメタクリレートな
どとを反応させ、次いで反応物を還元することによって
目的とする芳香族ジアミン化合物を合成する方法をあげ
ることができる。(2) Synthesis method of diaminobenzoic acid esters One example is a method of synthesizing the desired aromatic diamine compound by reacting dinitrobenzoic acid chloride with hydroxyethyl methacrylate, etc., and then reducing the reactant. .
(3)ジアミノベンジルアクリレート類の合成法ジニト
ロベンジルアルコールと、アクリル酸クロリドなどとを
反応させ、次いで反応物を還元することによって目的と
する芳香族ジアミン化合物を合成する方法をあげること
ができる。(3) Synthesis method of diaminobenzyl acrylates An example of this method is to react dinitrobenzyl alcohol with acrylic acid chloride, and then reduce the reactant to synthesize the desired aromatic diamine compound.
また、前記芳香族ポリアミドの製造に用いられる、前記
一般式(III)で表される芳香族ジアミンのうちAr
4で示される芳香族残基が
Rはメチル基又はエチル基を示す)である化合物(前記
の4’−N、N−ジメチルアミノ−3,5−ジアミノベ
ンゾフェノンなど)も、新規化合物であり、その合成法
には制限されないが、その好ましい合成法としては、先
ずジニトロ塩化ベンゾイルとアニリンとを反応させてジ
ニトロベンズアニリドを合成し、次ぎにこれと
/
Ar−N とオキシ塩化リンとを反応させ、得られ\
る反応物に濃塩酸を加えることによって次いでこれを還
元することによって目的とするジアミン化合物を合成す
る方法をあげることができる。Furthermore, among the aromatic diamines represented by the general formula (III) used in the production of the aromatic polyamide, Ar
A compound in which the aromatic residue represented by 4 is R represents a methyl group or an ethyl group (such as the above-mentioned 4'-N,N-dimethylamino-3,5-diaminobenzophenone) is also a new compound, Although the synthesis method is not limited, a preferable synthesis method is to first react dinitrobenzoyl chloride and aniline to synthesize dinitrobenzanilide, and then react this with Ar-N and phosphorus oxychloride. The desired diamine compound can be synthesized by adding concentrated hydrochloric acid to the resulting reaction product and then reducing it.
また、本発明で用いられる感光性樹脂組成物を構成する
有機溶媒としては、N、N−ジメチルホルムアミド、N
、N−ジメチルアセトアミド、N−メチル−2−ピロリ
ドン、ジメチルスルホキシド、1,3−ジメチル−2−
イミダリジノン、ヘキサメチルホスホリットトリアミド
、ヘキサメチレンホスホアミドなどをあげることができ
る。この感光性樹脂組成物は、前記芳香族ポリアミドが
約3〜50重量%、好ましくは5〜40重量%の割合で
有機溶媒に均一に熔解されている溶液組成物である。Further, as the organic solvent constituting the photosensitive resin composition used in the present invention, N,N-dimethylformamide, N
, N-dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, 1,3-dimethyl-2-
Examples include imidaridinone, hexamethylphosphorite triamide, hexamethylenephosphoamide, and the like. This photosensitive resin composition is a solution composition in which the aromatic polyamide is uniformly dissolved in an organic solvent at a ratio of about 3 to 50% by weight, preferably 5 to 40% by weight.
本発明で用いられる上記感光性樹脂組成物には、必要に
応じ、熱重合防止剤を配合させることができる。かかる
熱重合防止剤としては、ハイドロキノン、2.6−ジー
t−ブチル−4−メチルフェノール(BHT) 、メチ
ルエーテルハイドロキノン、ベンゾキノンなどをあげる
ことができる。The photosensitive resin composition used in the present invention may contain a thermal polymerization inhibitor, if necessary. Examples of such thermal polymerization inhibitors include hydroquinone, 2,6-di-t-butyl-4-methylphenol (BHT), methyl ether hydroquinone, and benzoquinone.
この熱重合防止剤の配合量は、前記ポリアミド100重
量部に対し0〜3重量部程度が適当である。The appropriate amount of the thermal polymerization inhibitor is about 0 to 3 parts by weight per 100 parts by weight of the polyamide.
また、本発明で用いられる感光性樹脂組成物には、必要
に応じ、増感剤及び光重合開始剤を添加17−
させることができる。かかる増感剤及び光重合開始剤と
しては、ミヒラーズケトン、ベンゾイン、ベンゾインメ
チルエーテル、ベンゾインエチルエーテル、ベンゾイン
イソプロピルエーテル、2−t−ブチルアントラキノン
、1.2−ベンゾ−9゜10−アントラキノン、4,4
° −ビス(ジエチルアミノ)ベンゾフェノン、アセト
フェノン、ベンゾフェノン、1.5−アセナフテン、チ
オキサントン又はその誘導体(例えばクロルチオキサン
トン、メチルチオキサントン)、アントラニル酸ジメチ
ルアミノベンゾエーテトなどをあげることができ、これ
らは単独で又は2種以上混合して用いられる。この増感
剤及び光重合開始剤の配合量は、前記ポリアミド100
重量部に対し1〜10重量部程度が適当である。Furthermore, a sensitizer and a photopolymerization initiator can be added to the photosensitive resin composition used in the present invention, if necessary. Such sensitizers and photopolymerization initiators include Michler's ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, 2-t-butylanthraquinone, 1,2-benzo-9°10-anthraquinone, 4,4
-bis(diethylamino)benzophenone, acetophenone, benzophenone, 1,5-acenaphthene, thioxanthone or its derivatives (e.g. chlorothioxanthone, methylthioxanthone), anthranilic acid dimethylaminobenzoate, etc., which may be used alone or A mixture of two or more types is used. The blending amount of this sensitizer and photopolymerization initiator is as follows:
Approximately 1 to 10 parts by weight is appropriate.
本発明に使用する感光性樹脂組成物は、常温で測定した
回転粘度が約1〜5000ボイズ、特に5〜1000ポ
イズ、更に最適には10〜500ポイズである粘稠で、
無色透明な前記ポリアミド溶液組成物であることが好ま
しい。The photosensitive resin composition used in the present invention has a viscosity with a rotational viscosity of about 1 to 5000 poise, particularly 5 to 1000 poise, and more preferably 10 to 500 poise, measured at room temperature.
The polyamide solution composition is preferably colorless and transparent.
18−
次に、上述の感光性樹脂組成物を用いた、本発明の多層
プリント配線板の製造方法の一実施態様の概要を図面を
参照し乍ら説明する。18- Next, an outline of one embodiment of the method for manufacturing a multilayer printed wiring board of the present invention using the above-mentioned photosensitive resin composition will be explained with reference to the drawings.
本発明の代表的な実施態様は、次の4工程を基本工程と
するものである。A typical embodiment of the present invention has the following four steps as basic steps.
工程i)第1層目の配線パターンの形成絶縁基板上に、
第1層目の配線パターン2をアディティブプロセス又は
フォトエツチングプロセスにより形成する。この工程は
、通常、銅張をした絶縁基板に対して通常の感光性樹脂
を用い、常法通り実施される。Step i) Formation of first layer wiring pattern On the insulating substrate,
The first layer wiring pattern 2 is formed by an additive process or a photoetching process. This step is usually carried out in a conventional manner using a conventional photosensitive resin on a copper-clad insulating substrate.
工程ii)フォトポリマー膜の形成
工程ii)で得られた第1層目の配線パターン2上に、
前述の本発明の感光性樹脂組成物を約5〜2000μm
、好ましくは10〜1000、tlm、更に好ましくは
30〜800μmの平均厚さの薄膜状に塗布、乾燥して
、約2〜200μm1好ましくは5〜150μmの平均
厚さのフォトポリマーの膜3を形成する。このフォトポ
リマーのII!1ti3の形成により第1層目の配線パ
ターン2は該膜3で被覆埋設される。Step ii) Forming a photopolymer film On the first layer wiring pattern 2 obtained in step ii),
The photosensitive resin composition of the present invention described above has a thickness of about 5 to 2000 μm.
, preferably 10 to 1000 tlm, more preferably 30 to 800 μm, and dried to form a photopolymer film 3 with an average thickness of about 2 to 200 μm, preferably 5 to 150 μm. do. This photopolymer II! By forming the film 1ti3, the first layer wiring pattern 2 is covered and buried with the film 3.
工程iii )パイヤホールを有する光硬化膜の形成工
程ii)で得られたフォトポリマーの膜3を所定のポジ
マスクで覆い、紫外光等により露光し、N−メチル−2
−ピロリドン等の溶剤を用いて未硬化部を洗い落とし現
像し、水洗して、第1層目の配線パターンと導通する所
定の位置にパイヤボール4の形成された光硬化膜を形成
する。そして、この光硬化膜は眉間絶縁膜3゛を形成す
る。Step iii) Formation of a photocured film having hole holes The photopolymer film 3 obtained in step ii) is covered with a predetermined positive mask, exposed to ultraviolet light, etc., and N-methyl-2
- The uncured portion is washed off using a solvent such as pyrrolidone, developed, and washed with water to form a photocured film with piere balls 4 formed at predetermined positions that are electrically connected to the first layer wiring pattern. This photocured film forms the glabellar insulating film 3'.
工程iv)第2層目の配線パターンの形成工程iii
)で得られた眉間絶縁膜3′上及びパイ上ボール4部に
第2層目の配線パターン5を形成する。この第2層目の
配線パターン5の形成にはセミアディティブ法が適用さ
れる。即ち、先ず、上記層間絶縁膜3゛上及びバイ中ホ
ール4部に、それらを表面処理後無電解銅メッキを施し
、その上に通常の配線パターン形成用の感光性樹脂を用
いて第2層目の配線パターン形成部を形成し、該形成部
に銅を電気メッキした後、上記感光性樹脂の硬化膜を剥
離して銅の電気メッキ部以外の無電解銅メブキ部をエツ
チングし、電気メッキ銅からなる第2層目の配線パター
ン5を形成する。Step iv) Step iii of forming the second layer wiring pattern
) A second layer wiring pattern 5 is formed on the glabellar insulating film 3' and on the pie ball 4. A semi-additive method is applied to form the second layer wiring pattern 5. That is, first, electroless copper plating is applied to the interlayer insulating film 3 and the 4 portions of the via hole after surface treatment, and then a second layer is formed using a photosensitive resin for forming a normal wiring pattern. After forming a wiring pattern forming area and electroplating copper on the forming area, the cured film of the photosensitive resin is peeled off, and the electroless copper plating area other than the copper electroplating area is etched, and the electroplating process is performed. A second layer wiring pattern 5 made of copper is formed.
上述の工程i)〜iv)を終了後、更に工程ii)〜i
v)を必要回数繰り返すことにより所望の多層プリント
配線板を製造する。After completing the above steps i) to iv), further steps ii) to i
A desired multilayer printed wiring board is manufactured by repeating step v) as many times as necessary.
上述の工程ii)及び工程iii )における感光性樹
脂組成物の塗布、乾燥、及びフォトポリマーの膜の露光
、現像は、次のようにして行う。The coating and drying of the photosensitive resin composition, and the exposure and development of the photopolymer film in the above steps ii) and iii) are performed as follows.
上記感光性樹脂組成物の基板への塗布は、例えば回転塗
布機で行うことができる。塗布膜の乾燥は150℃以下
、好ましくは100℃以下で行う。The photosensitive resin composition can be applied to the substrate using, for example, a rotary coating machine. The coating film is dried at a temperature of 150°C or lower, preferably 100°C or lower.
この際減圧はしてもしなくてもよい。乾燥後、塗布膜に
ネガ型のフォトマスクチャートを置き、紫外線、可視光
線、電子線、X線などの活性光線を照射する。次いで未
露光の部分を現像液で洗い流すことによりポリアミドの
レリーフパターンを得21−
る。上記の現像液としては、N、N−ジメチルホルムア
ミド、N、N−ジメチルアセトアミド、ジメチルスルホ
キシド、N−メチル−2−ピロリドン、ヘキサメチレン
ホスホアミド、ジグライムなどの溶剤又は該溶剤とメタ
ノール、エタノールとの混合系を用いることができる。At this time, the pressure may or may not be reduced. After drying, a negative photomask chart is placed on the coated film, and active light such as ultraviolet rays, visible light, electron beams, and X-rays is irradiated. The unexposed areas are then washed away with a developer to obtain a polyamide relief pattern 21-. The above developer may be a solvent such as N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, N-methyl-2-pyrrolidone, hexamethylenephosphoamide, diglyme, or a combination of the solvent and methanol or ethanol. Mixed systems can be used.
本発明の多層プリント配線板の製造方法に用いられる感
光性樹脂組成物の感光材料、即ち、前記芳香族ポリアミ
ドは、感光基が高分子鎮中に導入されているものであり
、有機溶媒に対する溶解性が優れているため、有機溶媒
に熔解し感光性樹脂組成物として使用することにより光
化学的手段によって配線パターンを容易に形成すること
ができ、且つ配線パターンを形成する場合、高い感光性
を有し、光透過性及び光架橋性に優れているため、かな
り厚い膜に光硬化することが容易に短時間で行え、いず
れの光硬化膜にも所望の位置に、従来の感光材料では到
底不可能であった約300μm程度の小径のパイヤホー
ルの形成が容易に可能にし、また従来の非感光性の、ポ
リイミドやボ22−
リアミドのように、画像形成用の別の光硬化性物質を特
に必要としない。また、感光性ポリアミック酸(ポリイ
ミド前駆体)やポリアミドアミンク酸のように画像形成
後イミド化工程を必要としないため、工程の簡略化のみ
ならず、素子への熱的影響や収縮による歪や応力を与え
ることがないなどの多くの優れた効果がある。The photosensitive material of the photosensitive resin composition used in the method for producing a multilayer printed wiring board of the present invention, that is, the aromatic polyamide, has a photosensitive group introduced into the polymer chain, and is soluble in an organic solvent. Because of its excellent properties, wiring patterns can be easily formed by photochemical means by dissolving it in an organic solvent and using it as a photosensitive resin composition. Because it has excellent light transmittance and photocrosslinkability, it can be easily photocured into a fairly thick film in a short time, and any photocured film can be placed in the desired position, which is impossible with conventional photosensitive materials. It is now possible to easily form a diameter hole of about 300 μm, which was previously possible, and there is no particular need for another photocurable material for image formation, such as conventional non-photosensitive polyimide or polyimide. I don't. In addition, unlike photosensitive polyamic acid (polyimide precursor) and polyamide aminic acid, it does not require an imidization process after image formation, which not only simplifies the process, but also reduces distortion due to thermal effects and shrinkage on the element. It has many excellent effects such as not giving stress.
しかも、前記芳香族ポリアミドを用いて形成される光硬
化膜の眉間絶縁膜は、耐熱性、機械的性質及び電気的性
質に優れ、且つ基板への接着性が良好なものであり、ま
た前記ポリアミドは、光透過性及び光架橋性に優れてい
るため、厚さが約30〜80μmの厚みのある膜を好適
に形成することができる。Moreover, the glabellar insulating film of the photocured film formed using the aromatic polyamide has excellent heat resistance, mechanical properties, and electrical properties, and has good adhesion to the substrate. Since it has excellent light transmittance and photocrosslinkability, it is possible to suitably form a thick film with a thickness of about 30 to 80 μm.
本発明の多層プリント配線板の製造方法に用いる感光性
樹脂組成物の感光材料は、上述の如き種々の特性を有し
ており、配線パターン上に直接、バイヤホールを有する
絶縁膜を形成できるから、斯る感光材料を用いる本発明
によれば、多層プリント配線板の製造が可能となる。The photosensitive material of the photosensitive resin composition used in the method for producing a multilayer printed wiring board of the present invention has various properties as described above, and can form an insulating film having via holes directly on the wiring pattern. According to the present invention using such a photosensitive material, it is possible to manufacture a multilayer printed wiring board.
叙上の如く、本発明は、フォトポリマーとして、耐熱性
が優れており、感度、解像度が高く、基板に対する接着
性が優れている、有機溶媒可溶性のポリアミドを用いる
ことにより、パイヤホールの細径化等が要求される層間
絶縁膜が眉間に内在された多層プリント配線板の製造を
可能にしたもので、各層のいずれの位置にも自由にパイ
ヤホールを形成することができるものであり、電子工業
分野に対し大きく寄与するものである。As mentioned above, the present invention uses organic solvent-soluble polyamide, which has excellent heat resistance, high sensitivity and resolution, and excellent adhesion to substrates, as a photopolymer, thereby reducing the diameter of the pie hole. This makes it possible to manufacture multilayer printed wiring boards in which the interlayer insulating film, which requires This will greatly contribute to the
以下に、本発明で使用される前記ポリアミドの製造に用
いられるジアミン成分の合成例、本発明で使用される前
記ポリアミドの製造例、及び本発明の実施例を示す。Examples of the synthesis of the diamine component used in the production of the polyamide used in the present invention, production examples of the polyamide used in the present invention, and examples of the present invention are shown below.
合成例1
第一工程
2−ヒドロキシエチルメタクリレート29.6 gとピ
リジン18.1 gをTHF (テトラヒドロフラン)
200mlに熔解した溶液に、3.5−ジニトロ安息香
酸クロリド50gをTHF150mlに溶解した溶液を
滴下ロートから5〜6℃で滴下して1時間で加えた。滴
下後、更に10〜15℃で1時間攪拌した。その後、ブ
フナーロートを用いて析出したピリジン塩酸塩を濾別し
、濾液を濃縮した後、水中に注ぎ込み白黄色の沈澱物を
析出させた。Synthesis Example 1 First Step 29.6 g of 2-hydroxyethyl methacrylate and 18.1 g of pyridine were dissolved in THF (tetrahydrofuran).
A solution prepared by dissolving 50 g of 3.5-dinitrobenzoic acid chloride in 150 ml of THF was added dropwise from a dropping funnel at 5 to 6° C. over 1 hour to the 200 ml solution. After the dropwise addition, the mixture was further stirred at 10 to 15°C for 1 hour. Thereafter, the precipitated pyridine hydrochloride was filtered out using a Buchner funnel, the filtrate was concentrated, and then poured into water to precipitate a white-yellow precipitate.
得られた沈澱物をデカンテーションにより数回25−
洗浄後、真空中で乾燥し、3,5−ジニトロ安息香酸エ
チルメタクリル酸エステル60gを得た。The obtained precipitate was washed several times by decantation and then dried in vacuo to obtain 60 g of 3,5-dinitrobenzoic acid ethyl methacrylate.
第二工程
第一工程で得られた3、5−ジニトロ安息香酸エチルメ
タクリル酸エステル5gを酢酸36m1に熔解した溶液
を、鉄粉27gを水15m1/酢酸35m1に懸濁させ
た溶液に反応温度が25℃±3℃に保持されるように攪
拌しながら2〜4mlずつ加えた。約20分間で添加を
終え、更に10分間攪拌した。Second step A solution of 5 g of 3,5-dinitrobenzoic acid ethyl methacrylate obtained in the first step dissolved in 36 ml of acetic acid was added to a solution of 27 g of iron powder suspended in 15 ml of water/35 ml of acetic acid at a reaction temperature of The mixture was added in 2-4 ml portions while stirring to maintain the temperature at 25°C±3°C. The addition was completed in about 20 minutes, and the mixture was stirred for an additional 10 minutes.
その後、ブフナーロートを用いて、過剰の鉄分を分離し
た濾液に氷を入れて約O℃とした後、アンモニア水でp
t+を8付近にし、酢酸エチルを用いて抽出し、水洗乾
燥後、酢酸エチルを除去し、粗目的物11.2g(収率
67.5%)を得た。この粗目的物の精製はカラムクロ
マトグラフィーにより行った。即ち、65mmφのカラ
ムにワコーゲル(c−200)200gを充填し、酢酸
エチルとべ=26−
ンゼンの1:1の混合溶媒を展開溶媒として分離し、目
的物7.8gを得た。Then, using a Buchner funnel, add ice to the filtrate from which excess iron was separated and bring the temperature to about 0°C, and then purge with aqueous ammonia.
After setting t+ to around 8, extraction was performed using ethyl acetate, washing with water and drying, and ethyl acetate was removed to obtain 11.2 g (yield: 67.5%) of the crude target product. This crude target product was purified by column chromatography. That is, 200 g of Wako Gel (c-200) was packed into a 65 mmφ column and separated using a 1:1 mixed solvent of ethyl acetate and benzene as a developing solvent to obtain 7.8 g of the target product.
融点 88〜89℃
元素分析値 (CnlL&Nz 04として)HN
実測値(%) 59.36 6.0B 10.49計算
値(%)59.’08 6.10 ]、0.60又、上
記目的物について、赤外吸収スペクトル及びH−N M
Rスペクトルを測定し、目的物であることを確認した
。Melting point 88-89°C Elemental analysis value (as CnlL&Nz 04) HN Actual value (%) 59.36 6.0B 10.49 Calculated value (%) 59. '08 6.10], 0.60 Also, regarding the above target object, infrared absorption spectrum and H-N M
The R spectrum was measured and it was confirmed that it was the desired product.
製造例1
■ポリアミドの製造
三ロフラスコに乾燥窒素を通じてフラスコ内を置換した
後、塩化リチウム3gと合成例1で得られた3、5−ジ
アミノ安息香酸エチルメタクリル酸エステル31.71
4gを入れ、これにN−メチル−2−ピロリドン(NM
P)240mlを加え熔解した。溶解後、3℃に冷却し
攪拌しながらテレフタル酸ジクロライド24.364
gを加えた。この時発熱があり、溶液の温度が34℃ま
で上昇した。これを30分間氷水中で攪拌した後、室温
で1時間攪拌をつづけ反応させた。Production Example 1 ■ Production of Polyamide After purging the inside of the flask with dry nitrogen, 3 g of lithium chloride and 31.71 g of 3,5-diaminobenzoic acid ethyl methacrylate obtained in Synthesis Example 1 were added.
4g of N-methyl-2-pyrrolidone (NM
P) 240 ml was added and melted. After dissolving, cool to 3°C and add terephthalic acid dichloride 24.364 while stirring.
g was added. At this time, heat generation occurred and the temperature of the solution rose to 34°C. This was stirred in ice water for 30 minutes, and then stirred and reacted at room temperature for 1 hour.
次いで、反応溶液にNMP 300mlを加え希釈した
後、これをメタノール61と水61の混合液に加えポリ
アミドを析出させた。析出物を濾集し乾燥し、白色のポ
リアミド粉末42.01gを得た。Next, 300 ml of NMP was added to the reaction solution to dilute it, and then this was added to a mixed solution of 61 parts of methanol and 61 parts of water to precipitate polyamide. The precipitate was collected by filtration and dried to obtain 42.01 g of white polyamide powder.
このポリアミドの対数粘度(ポリアミド0.5 g /
NMP100ml濃度のポリアミド溶液、30℃)は1
.73であった。Logarithmic viscosity of this polyamide (0.5 g of polyamide /
NMP (100 ml concentration of polyamide solution, 30°C) is 1
.. It was 73.
■感光性樹脂組成物の調製
上記■で得られたポリアミド粉末30gに、有機溶媒と
してNMP150g、光重合開始剤としてミヒラーズケ
トン1.2g、及び熱重合防止剤としてハイドロキノン
0.15 gとメチルエーテルハイドロキノン0.15
gを加え、よく攪拌し均一粘稠液とした後、圧力濾過
して微細なごみなどを除去し、150ポイズの感光性樹
脂組成物を調製した。■ Preparation of photosensitive resin composition To 30 g of the polyamide powder obtained in the above (■), 150 g of NMP as an organic solvent, 1.2 g of Michler's ketone as a photopolymerization initiator, and 0.15 g of hydroquinone and 0 methyl ether hydroquinone as thermal polymerization inhibitors were added. .15
After stirring well to obtain a uniform viscous liquid, fine dust and the like were removed by pressure filtration to prepare a 150 poise photosensitive resin composition.
■硬化膜の作成及び種々の特性値の測定結果銅板上に7
00μm厚のスペーサーを設け、これに上記■で調製さ
れた感光性樹脂組成物を流し込み、バーコータを用いて
塗布し、平均膜厚が約700μmである薄膜を形成し、
その薄膜を70℃の熱風乾燥器内で2時間乾燥して厚さ
75μmの膜を得た。この膜を、超高圧水銀灯を用いて
、IJ/c+Jの照射を行って光硬化させた後、150
℃で30分間熱処理を行い、硬化膜を作成した。■Preparation of cured film and measurement results of various characteristic values 7 on copper plate
A spacer with a thickness of 00 μm was provided, and the photosensitive resin composition prepared in step (1) above was poured into it and coated using a bar coater to form a thin film with an average thickness of about 700 μm.
The thin film was dried in a hot air dryer at 70° C. for 2 hours to obtain a film with a thickness of 75 μm. This film was photocured by IJ/c+J irradiation using an ultra-high pressure mercury lamp, and then
Heat treatment was performed at ℃ for 30 minutes to create a cured film.
この硬化膜について種々の特性値を測定した結果を下記
表1に示す。The results of measuring various characteristic values of this cured film are shown in Table 1 below.
表1
29−
(表1の続き)
30−
尚、市販のウレタン系フォトポリマーにより形成した1
50μm厚の硬化膜について、上記の熱衝撃試験を行っ
たところ、硬化膜に亀裂の発生がみられた。Table 1 29- (Continuation of Table 1) 30- In addition, 1 formed from a commercially available urethane photopolymer
When the above thermal shock test was performed on the cured film having a thickness of 50 μm, cracks were observed in the cured film.
実施例1
03層プリント配線板の製造
i)第1N目の銅配線パターンの形成
ガラスエポキシ銅張積層板(基板)上にミューロンA(
室町化学工業@製、ネガ型パターンレジスト)をラミネ
ートし、その表面を第1N目の配線用マスクフィルムで
覆い、超高圧水銀灯を用いて0.2 、J / cta
の照射し露光を行った後、1.3%の炭酸ナトリウム、
リン酸ナトリウムの水溶液で現像し、水洗し、第1層目
の配線部分を被覆したミューロンAの薄膜を形成した。Example 1 Production of 03-layer printed wiring board i) Formation of 1Nth copper wiring pattern Myuron A (
Negative pattern resist (manufactured by Muromachi Kagaku Kogyo@) was laminated, its surface was covered with a 1N-th wiring mask film, and an ultra-high pressure mercury lamp was used to 0.2, J/cta.
After irradiation and exposure of 1.3% sodium carbonate,
It was developed with an aqueous solution of sodium phosphate and washed with water to form a thin film of Myuron A covering the first layer wiring portion.
次いで、基板を、65%の塩化第2鉄水溶液に浸漬し基
板上の不用部分の銅をエツチング除去した後、更に3%
の水酸化ナトリウム水溶液に浸漬し上記ミューロンAの
薄膜を剥離して第1層目の銅配線パターンを形成した。Next, the substrate was immersed in a 65% ferric chloride aqueous solution to remove unnecessary copper on the substrate by etching, and then etched with an additional 3% ferric chloride solution.
The thin film of Myuron A was peeled off by immersion in an aqueous sodium hydroxide solution to form a first layer copper wiring pattern.
ii )ポリアミド′膜の形成
上記工程i)で得られた、第1層目の銅配線パターンが
形成された基板上に、700μm厚のスペーサーを設け
、これに、前記製造例1の■で調製された感光性樹脂組
成物を塗布し、平均厚さ約650μmの薄膜を形成し、
70°Cで2時間乾燥して厚さ70μmのポリアミドの
膜を形成した。ii) Formation of polyamide' film A 700 μm thick spacer was provided on the substrate obtained in step i) above on which the first layer copper wiring pattern was formed, and a spacer with a thickness of 700 μm was provided on this. The resulting photosensitive resin composition was applied to form a thin film with an average thickness of about 650 μm,
It was dried at 70°C for 2 hours to form a polyamide film with a thickness of 70 μm.
iii )パイヤホールの形成
上記工程ii)で形成されたポリアミドの膜の表面ラス
ルーホール用マスクパターンで覆い、超高圧水銀灯を用
いてI J / cntの照射し露光を行った。iii) Formation of hole holes The surface of the polyamide film formed in step ii) above was covered with a mask pattern for through-holes, and exposed to IJ/cnt using an ultra-high pressure mercury lamp.
バイヤホールの現像は、NMP溶液中で28KHz90
Wの超音波洗浄機を用いて3分間行った。更に、5 J
/ cJの照射し後露光を行った後、150°Cで3
分間の後加熱を行い、ポリアミドの膜を硬化させ、光硬
化膜をそのまま残置し眉間絶縁膜とした。Via hole development was performed at 28KHz90 in NMP solution.
The cleaning was carried out for 3 minutes using a W ultrasonic cleaner. Furthermore, 5 J
/ cJ irradiation and post-exposure, then 3 cJ at 150°C.
Post-heating was performed for a minute to cure the polyamide film, and the photocured film was left as it was to serve as a glabellar insulating film.
iv)第2層目の銅配線パターンの形成上記工程iii
)で形成された眉間絶縁膜をスクラブクリーナー(シ
プレー社製)を用いて表面処理後、上記層間絶縁膜上及
び上記パイヤホール部に無電解銅メッキ処理を室町化学
工業−のMKシリーズに基づき施した。iv) Formation of second layer copper wiring pattern above step iii
) After surface treatment of the glabellar insulating film formed using a scrub cleaner (manufactured by Shipley), electroless copper plating treatment was performed on the interlayer insulating film and the pie hole portion based on Muromachi Chemical Industry's MK series. .
次いで、上記無電解銅メッキ部上にミューロンAをラミ
ネートし、その表面を第2層目の配線用マスクフィルム
で覆い、超高圧水銀灯を用いて0、08 J / cr
aの照射し露光を行った後、1.3%の炭酸ナトリウム
、リン酸ナトリウムの水溶液で現像し、水洗し、ミュー
ロンAの薄膜を形成し、第2層目の配線パターン形成部
を得た。Next, Myuron A was laminated on the electroless copper plating part, the surface was covered with a second layer mask film for wiring, and the film was heated to 0.08 J/cr using an ultra-high pressure mercury lamp.
After irradiation and exposure of a, it was developed with an aqueous solution of 1.3% sodium carbonate and sodium phosphate, and washed with water to form a thin film of Myuron A to obtain a second layer wiring pattern forming part. .
次いで、上記第2層目の配線パターン形成部に硫酸銅浴
による電気メツキ処理を施すために、荏原コージライト
THプロセスに基づき、陽極を銅板にし陰極に基板を装
着し、2A/dmの条件で、1時間電気メッキ処理を施
した。その後、基板を、3%の水酸化ナトリウム水溶液
に浸漬しミューロンAの薄膜を剥離し、更に20%の過
硫酸アンモニウム水溶液に数秒間浸漬し、無電解銅メッ
キ処理で形成された上記無電解銅メッキ部の不用部分の
銅をエツチング除去し、第2層目の銅配線バ33−
ターンを形成した。Next, in order to perform electroplating treatment using a copper sulfate bath on the wiring pattern forming portion of the second layer, a copper plate was used as the anode and a substrate was attached to the cathode, based on the Ebara cordierite TH process, under the condition of 2A/dm. , electroplating was performed for 1 hour. Thereafter, the substrate was immersed in a 3% aqueous sodium hydroxide solution to peel off the Myuron A thin film, and further immersed in a 20% ammonium persulfate aqueous solution for several seconds to remove the electroless copper plating formed by electroless copper plating. The unnecessary portions of copper were removed by etching to form a second layer of copper wiring bar 33-turn.
■)第3層目の銅配線パターンの形成
上記工程11)〜iv)を繰り返すことにより第3層目
の銅配線パターンを形成した。(2) Formation of third layer copper wiring pattern A third layer copper wiring pattern was formed by repeating the above steps 11) to iv).
■熱衝撃性試験
上記■で製造された3層プリント配線板を用いて、MI
L規格−3TD−202D−107による熱衝撃性試験
(−65℃、30分間#125℃、30分間、100サ
イクル)を行い、亀裂の発生の有無及び導通の信頼性を
調べたところ、異常は認められなかった。■Thermal shock test Using the three-layer printed wiring board manufactured in the above ■, MI
A thermal shock test (-65°C, 30 minutes #125°C, 30 minutes, 100 cycles) according to L standard-3TD-202D-107 was conducted to check for the occurrence of cracks and the reliability of continuity, and no abnormalities were found. I was not able to admit.
製造例2
■ポリアミドの製造
三ロフラスコに乾燥窒素を通じてフラスコ内を置換した
後、塩化リチウム3gと合成例1で得られた3、5−ジ
アミノ安息香酸エチルメタクリル酸エステル31.71
4gを入れ、これにNMP240mlを加え溶解した。Production Example 2 ■Production of polyamide After purging the inside of the flask with dry nitrogen, 3 g of lithium chloride and 31.71 g of 3,5-diaminobenzoic acid ethyl methacrylate obtained in Synthesis Example 1 were added.
4g of NMP was added thereto, and 240ml of NMP was added and dissolved.
溶解後、2°Cに冷却し攪 1募、 “・・□。After dissolving, cool to 2°C and stir once.
イr′
−34−、= ・・
32℃まで上昇した。これを30分間氷水中で攪拌した
後、室温で1時間攪拌をつづけ反応させた。Ir' -34-, = ... The temperature rose to 32°C. This was stirred in ice water for 30 minutes, and then stirred and reacted at room temperature for 1 hour.
その後、反応溶液にNMP300mlを加え希釈した。Thereafter, 300 ml of NMP was added to the reaction solution to dilute it.
更に、反応溶液に、メタクリル酸クロライド25、8
gをNMP30mlに熔解した溶液を30分間で滴下し
て加えた。この時発熱があり、溶液の温度が35°Cま
で上昇した。Furthermore, methacrylic acid chloride 25, 8 was added to the reaction solution.
A solution prepared by dissolving 50 g of NMP in 30 ml of NMP was added dropwise over 30 minutes. At this time, an exotherm occurred and the temperature of the solution rose to 35°C.
反応後、反応溶液をメタノール6pと水61の混合液に
加えポリアミドを析出させた。析出物を濾集し乾燥し、
白色のポリアミド粉末51gを得た。このポリアミドの
対数粘度(ポリアミド0.5g/NMP 100ml濃
度のポリアミド溶液、30℃)は1.77であった。After the reaction, the reaction solution was added to a mixed solution of 6 parts of methanol and 6 parts of water to precipitate polyamide. Filter and dry the precipitate,
51 g of white polyamide powder was obtained. The logarithmic viscosity of this polyamide (polyamide solution with a concentration of 0.5 g of polyamide/100 ml of NMP, 30° C.) was 1.77.
■感光性樹脂組成物の調製
上記■で得られたポリアミド粉末を用いて製造例1の■
と同様にして約170ボイズの感光性樹脂組成物を調製
した。■ Preparation of photosensitive resin composition Using the polyamide powder obtained in the above ■,
A photosensitive resin composition having about 170 voids was prepared in the same manner as above.
実施例2
製造例2の■で調製された感光性樹脂組成物を用いて、
実施例1と同様に、3層プリント配線板を製造し、それ
について熱衝撃性試験を行い亀裂の発生の有無及び導通
の信頼性を調べたところ、異常は認められなかった。Example 2 Using the photosensitive resin composition prepared in Production Example 2,
In the same manner as in Example 1, a three-layer printed wiring board was manufactured and subjected to a thermal shock test to examine the occurrence of cracks and the reliability of continuity, and no abnormality was found.
図面は本発明の多層プリント配線板の製造方法の工程順
序を示す概略図である。
1・・・絶縁基板
2・・・第1層目の配線パターン
3・・・フォトポリマーの膜
3゛ ・・層間絶縁膜
4・・・パイヤホール
5・・・第2層目の配線パターン
特許出願人
宇 部 興 産 株式会社
図面の浄書(内容に変更なし)
手続補正書(方式)
%式%
2、発明の名称
多層プリント配線板の製造方法
3、補正をする者
事件との関係 特許出願人
(020)宇部興産株式会社
4、代理人
東京都港区赤坂九丁目6番29号
パシフィソク乃木坂601号
昭和59年5月29日(発送日)
6、補正の対象
明細書の図面の簡単な説明の欄及び図面7、補正の内容
(1)第36頁8行の「図面」を「第1図」と補正。
(2)図面(内容に変更なし)を別紙添付の通り補正(
図面に「第1図」を記入する補正)。
以上The drawings are schematic diagrams showing the process order of the method for manufacturing a multilayer printed wiring board of the present invention. 1...Insulating substrate 2...First layer wiring pattern 3...Photopolymer film 3''...Interlayer insulating film 4...Pier hole 5...Second layer wiring pattern patent application Jinyubu Kosan Co., Ltd. Engraving of drawings (no change in content) Procedural amendment (method) % formula % 2. Name of invention Method for manufacturing multilayer printed wiring board 3. Relationship with the person making the amendment Patent applicant (020) Ube Industries Co., Ltd. 4, Agent No. 601 Nogizaka, Pacifisoku, 6-29 Akasaka 9-chome, Minato-ku, Tokyo May 29, 1980 (Delivery date) 6. Brief explanation of the drawings of the specification subject to amendment Column and drawing 7, details of amendment (1) "Drawing" in line 8 of page 36 was corrected to "Figure 1." (2) Amend the drawing (no change in content) as attached (
(Amendment to write "Figure 1" on the drawing). that's all
Claims (1)
パターン上にフォトポリマーの膜を形成した後、該フォ
トポリマーの膜を、露光して光硬化させ、現像し所定位
置にパイヤホールの形成された光硬化膜を形成し、次い
で、上記フォトポリマーの光硬化膜を眉間絶縁膜として
使用して該眉間絶縁膜上及び上記パイヤホール部に第2
層目の配線パターンを形成し、更に上記のフォトポリマ
ーの膜形成工程以下の工程を順次繰り返して多層配線パ
ターンを形成する多層プリント配線板の製造方法におい
て、上記フォトポリマーの膜形成を、下記一般式(I
a)で表される構成単位を10モル%以上有する芳香族
ポリアミドが約3〜50重量%の割合で有機溶媒に溶解
されている感光性樹脂組成物を用い、該組成物を配線パ
ターン上に塗布し、乾燥させることにより行うことを特
徴とする多層プリント配線板の製造方法。 (但し、上式中、R1及びR2は水素原子又は反応性有
機化合物の残基を示し、Ar1は芳香族残基を示し、^
r2は感光基を含有する芳香族残基を示す。)[Claims] After forming a first layer wiring pattern on an insulating substrate and forming a photopolymer film on the wiring pattern, the photopolymer film is photocured by exposure and developed. Then, a photocured film with pie holes formed therein is formed at a predetermined position, and then, using the photocured film of the photopolymer as an insulating film between the eyebrows, a second film is formed on the glabella insulating film and in the part of the pie holes.
In a method for manufacturing a multilayer printed wiring board, in which a multilayer wiring pattern is formed by forming a wiring pattern for each layer and then sequentially repeating the steps following the photopolymer film formation step described above, the photopolymer film formation is performed by the following general method. Formula (I
Using a photosensitive resin composition in which an aromatic polyamide having 10 mol% or more of the structural unit represented by a) is dissolved in an organic solvent at a ratio of about 3 to 50% by weight, the composition is applied onto a wiring pattern. A method for producing a multilayer printed wiring board, characterized in that it is carried out by coating and drying. (However, in the above formula, R1 and R2 represent a hydrogen atom or a residue of a reactive organic compound, Ar1 represents an aromatic residue,
r2 represents an aromatic residue containing a photosensitive group. )
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59035770A JPS60180197A (en) | 1984-02-27 | 1984-02-27 | Method for manufacturing multilayer printed wiring board |
| US06/705,745 US4673773A (en) | 1984-02-27 | 1985-02-26 | Multilayer printed circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59035770A JPS60180197A (en) | 1984-02-27 | 1984-02-27 | Method for manufacturing multilayer printed wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60180197A true JPS60180197A (en) | 1985-09-13 |
| JPH037157B2 JPH037157B2 (en) | 1991-01-31 |
Family
ID=12451101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59035770A Granted JPS60180197A (en) | 1984-02-27 | 1984-02-27 | Method for manufacturing multilayer printed wiring board |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4673773A (en) |
| JP (1) | JPS60180197A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038395A (en) * | 1989-06-05 | 1991-01-16 | Nec Corp | Laminated composite ceramic substrate |
| US5200026A (en) * | 1990-05-18 | 1993-04-06 | International Business Machines Corporation | Manufacturing method for multi-layer circuit boards |
| JPH05343854A (en) * | 1993-02-17 | 1993-12-24 | Ibiden Co Ltd | Multilayer printed wiring board and manufacture thereof |
| JPH0746755B2 (en) * | 1990-11-15 | 1995-05-17 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Method for manufacturing multilayer thin film structure |
| US5455393A (en) * | 1992-11-30 | 1995-10-03 | Nec Corporation | Multilayered printed wiring board and method of manufacturing the same |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4714669A (en) * | 1985-04-11 | 1987-12-22 | Ciba-Geigy Corporation | Radiation-sensitive polycondensates, their preparation, material coated therewith and the use thereof |
| IT1228515B (en) * | 1988-03-03 | 1991-06-20 | Central Glass Co Ltd | AROMATIC POLYAMIDE RESINS HEAT RESISTANT AND PHOTOSENSITIVE AND METHOD FOR THEIR PREPARATION |
| JP2840271B2 (en) * | 1989-01-27 | 1998-12-24 | キヤノン株式会社 | Recording head |
| FR2650471B1 (en) * | 1989-07-27 | 1991-10-11 | Bull Sa | METHOD FOR FORMING PILLARS OF THE MULTI-LAYER NETWORK OF A CONNECTION CARD OF AT LEAST ONE HIGH DENSITY INTEGRATED CIRCUIT |
| FR2650472A1 (en) * | 1989-07-27 | 1991-02-01 | Bull Sa | METHOD FOR DEPOSITING AN INSULATING LAYER ON A CONDUCTIVE LAYER OF THE MULTI-LAYER NETWORK OF A HIGH DENSITY INTEGRATED CIRCUIT CONNECTION CARD, AND RESULTING CARD |
| US5219669A (en) * | 1990-04-26 | 1993-06-15 | International Business Machines Corporation | Layer thin film wiring process featuring self-alignment of vias |
| JPH0636472B2 (en) * | 1990-05-28 | 1994-05-11 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Method for manufacturing multilayer wiring board |
| JP2739726B2 (en) | 1990-09-27 | 1998-04-15 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Multilayer printed circuit board |
| JPH04262593A (en) * | 1991-02-18 | 1992-09-17 | Hitachi Ltd | Multilayer interconnection structure and multilayers laminating method therefor |
| US5177181A (en) * | 1991-06-06 | 1993-01-05 | Occidental Chemical Corporation | Diamines and photosensitive polyimides made therefrom |
| JPH06164091A (en) * | 1992-11-26 | 1994-06-10 | Sankyo Seiki Mfg Co Ltd | Circuit board |
| JP3051821B2 (en) * | 1994-07-05 | 2000-06-12 | 信越化学工業株式会社 | Photosensitive resin composition and method for forming patterned polyimide film using the same |
| US5616448A (en) * | 1995-01-27 | 1997-04-01 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin composition and a process for forming a patterned polyimide film using the same |
| US5699613A (en) * | 1995-09-25 | 1997-12-23 | International Business Machines Corporation | Fine dimension stacked vias for a multiple layer circuit board structure |
| JP3398557B2 (en) * | 1997-01-29 | 2003-04-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Method of manufacturing surface wiring printed circuit board |
| US6281275B1 (en) | 1998-05-29 | 2001-08-28 | Alchemetal Corp. | Polymeric coating compositions, polymer coated substrates, and methods of making and using the same |
| JP3963456B2 (en) * | 2003-06-16 | 2007-08-22 | キヤノン株式会社 | Photosensitive resin composition, ink jet recording head using the same, and method for producing the same |
| CN106356355B (en) * | 2015-07-15 | 2020-06-26 | 恒劲科技股份有限公司 | Substrate structure and manufacturing method thereof |
| CN105282982A (en) * | 2015-11-24 | 2016-01-27 | 悦虎电路(苏州)有限公司 | Photosensitive preparation method of holes |
| KR102087261B1 (en) * | 2017-02-16 | 2020-03-10 | 삼성에스디아이 주식회사 | Photosensitive resin composition, black pixel defining layer using the same and display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60101805A (en) * | 1983-11-09 | 1985-06-05 | 株式会社日立製作所 | Method of forming wire structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2933819A1 (en) * | 1979-08-21 | 1981-03-19 | Siemens AG, 1000 Berlin und 8000 München | POLYIMIDAZOLE AND POLYIMIDAZOPYRROLONE PRE-STAGES AND THEIR PRODUCTION |
| EP0048221B1 (en) * | 1980-09-15 | 1986-09-24 | Ciba-Geigy Ag | Use of flexible materials in printed circuits |
| US4511757A (en) * | 1983-07-13 | 1985-04-16 | At&T Technologies, Inc. | Circuit board fabrication leading to increased capacity |
-
1984
- 1984-02-27 JP JP59035770A patent/JPS60180197A/en active Granted
-
1985
- 1985-02-26 US US06/705,745 patent/US4673773A/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60101805A (en) * | 1983-11-09 | 1985-06-05 | 株式会社日立製作所 | Method of forming wire structure |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038395A (en) * | 1989-06-05 | 1991-01-16 | Nec Corp | Laminated composite ceramic substrate |
| US5200026A (en) * | 1990-05-18 | 1993-04-06 | International Business Machines Corporation | Manufacturing method for multi-layer circuit boards |
| JPH0746755B2 (en) * | 1990-11-15 | 1995-05-17 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Method for manufacturing multilayer thin film structure |
| US5455393A (en) * | 1992-11-30 | 1995-10-03 | Nec Corporation | Multilayered printed wiring board and method of manufacturing the same |
| US5526564A (en) * | 1992-11-30 | 1996-06-18 | Nec Corporation | Method of manufacturing a multilayered printed wiring board |
| JPH05343854A (en) * | 1993-02-17 | 1993-12-24 | Ibiden Co Ltd | Multilayer printed wiring board and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US4673773A (en) | 1987-06-16 |
| JPH037157B2 (en) | 1991-01-31 |
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