JPS60182779A - Photocoupler - Google Patents

Abstract

PURPOSE:To enable miniaturization and mass production by a method wherein a light emitting element, photo detecting element, and photo guiding element formed by selective lamination of amorphous Si and its compound are integrally formed on the same substrate by connection. CONSTITUTION:The section where a clear electrode 3, an a(amorphous)-SiC layer, a-Si layer 6, a-SiC layer 7, electrode layer 8 have been laminated on the substrate 1 is the light emitting element 14. The part of lamination of a clear electrode 4, p<+> a-Si layer 9, I-a-Si layer 10, n<+> a-Si layer 11, and electrode layer 12 constitutes the photo detecting element, and the part of lamination of SiOx layer 13 on an SiO2 layer 2 constitutes the photo guiding element 16. The elements 14, 15, and 16 thus integrally formed to the substrate 1 constitute the photocoupler 17. Therefore, the photocoupler 17 formed by integral lamination of respective constituent elements on the substrate 1 allows the light generated in the element 14 to be effectively confined, and to input to the element 15 by progation through the layer 2. Such a construction enables the manufacture of an IC-processed photocoupler without using an expensive manufacturing process.

Description

Detailed Description of the Invention (a) Technical Field of the Invention The present invention uses non-quality silicon (amorphous silicon, hereinafter referred to as a-St) to fabricate a light emitting element, a photodetecting element, and a space between them on the same substrate. This invention relates to a photo coupler that is integrally formed with a λ light guide element that connects the λ light guide element.

(b) Background of the Technology A photocoupler used as an isolator, a noise subreducer, an incluctor, etc. is constructed by optically coupling an electrically insulated light emitting section and a light receiving section. The conventional photo coupler (optical coupling device) has a structure in which a GaAs light emitting device and a Si photodiode device (photodetecting device) are each made separately, and then mechanically coupled to integrate them. is common, and some integrated circuit devices include a GaAs light emitting element, a GCIAS photodetecting element, and a light guide element that optically connects them.

(c) Prior art and problems In the photocoupler having the above configuration, it is difficult to improve miniaturization and mass production because it is impossible to convert the individual elements into an IC with the conventional configuration. IC
Optical couplers are manufactured using MBE' (Molecular Beam Epitaxial) and MBE' (Molecular Beam Epitaxial), which require large and expensive equipment.
Since it is produced by the OCVD method (organometallic CVD method), it has the disadvantage of being expensive.

(d) Purpose of the invention The purpose of the invention is to eliminate the above-mentioned problems.

(e) Structure of the Invention The above object is to provide a light emitting element formed by selectively laminating amorphous silicon (a-Si) and a compound of amorphous silicon, a photodetector element, and a light guide element on the same substrate. This is achieved by a photocoupler characterized in that it is formed by connecting to.

(f) Embodiments of the Invention The present invention utilizes the fact that a light emitting element, a 9m optical element, and a photodetecting element can be formed on the same substrate by creating a-5i and its compounds in various element structures. Yes, as light-emitting elements, a-3iC/a-3i/a-5iC's diisotropic structure and p-type a-5i/n-type a-5t are used.
It has a pn junction structure, and as a light guide element, it confines light as a multilayer structure of films whose refractive index is continuously changed by changing the concentration of N, C, and O added to a-3i. As a photodetecting element, there are an a-5i pin junction structure, a simino-dockey junction structure using a pt electrode and an a-3i, and a beterojunction structure using a transparent electrode and an a-3i.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Photocouplers according to embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a side sectional view of a main part of a photocoupler according to an embodiment of the present invention.

In FIG. 1, 1 is a substrate made of glass or the like, 2 is an SiO□ layer formed on the upper surface of the W temporary 1 and serves as a light guide path, and 3.
4 is 5IOzTr! A pair of transparent electrodes formed of ITO (In, Ti, 0) spanning from each opposing end of J2 to a part of the upper surface of the substrate l, 5.7 a-3iC layer, 6b
a-3i layer, 8 is an electrode layer consisting of 8β, 9 is p“a-3
i layer, 10 is 1a-5i layer, 11 is n″a-3i layer,
12 is an electrode layer made of 8β, and 13 is a 5iOX layer for confining light in the SiO□ layer 2. Then, transparent electrode 3+a S+C layer 5. a-3i layer 5. a-3iC
Layer 7. The part where the electrode layer 8 is laminated is the light emitting element 14,
Transparent electrode 4, p"a -3i layer 9+ ia St layer IQ
, n' a -54 layer 11° The part where the electrode layer 12 is laminated constitutes the photodetecting element I5, the part where the 5iOB layer 13 is laminated on the SiO□ layer 2 constitutes the photosensitive element 16, and the light emitting element integrally formed on the substrate 1. The element 14, the photodetector element 15, and the light guide element I6 constitute a photo I coupler 17. Therefore, the first coupler 17, in which each constituent element is integrally laminated on a glass substrate, is connected to the transparent electrode 3, which is the opposing electrode of the light emitting element 4, and the A
Light generated by applying an appropriate voltage between the ρ electrode layer 8 is effectively confined without being diffused outward, propagates through the SiO□ layer 2, and enters the photodetector element 15. , the current upon receiving the light is detected by the transparent electrode 4 and the Δβ electrode layer 12.

FIG. 2 is a diagram showing the main steps for producing the photocoupler 17 in the order of steps.

In Figures 2 (a) to (d), Figure 2 (a) shows 5ta2 deposited on the glass cutting plate 1 by the plasma CV I) method.
A state in which the SiO□ layer 2 is patterned by selectively etching the film is shown. FIG. 2 (b), which is used to explain the next step, shows the transparent electrode I
By depositing Q and selectively etching it, a transparent electrode 3.4 is formed.
After forming a pattern, the surface of the 5iOz layer 2 exposed between the opposing transparent electrodes 3 and 4 was etched to an appropriate depth. Next, as shown in Figure 2 (c) (
Then, a 5iOX layer 13 is formed on the etched portion of the SiO7 layer 2 by a glow discharge decomposition method using a reactive gas. However, as shown in FIG. 2(d), an a-3iC layer 5 + a S 1 layer 5. a-3i
A laminated pattern of the C layer 7 is formed, and the second p of the transparent electrode 4 is formed.
"a-Si layer 9. i a-3i layer 10+ n'
a After forming a laminated pattern of 54 layers 11, selectively etching the 44 layers deposited to cover them,
Light emitting element 14, photodetecting element 15, and λq optical element 1 in FIG.
6 is completed.

(g) As described in detail, according to the present invention, a light emitting element formed by selectively laminating amorphous silicon and a compound of amorphous silicon, a photodetecting element, and a light guiding element are the same; l! 1 (The crucian carp 1-cabra is formed by integrally connecting and forming on the board.)

Therefore, it is possible to manufacture IC photocouplers without the need for expensive manufacturing processes such as MBE equipment or MOCVD equipment, which allows for smaller photocouplers and larger FA's.
The effects of AI production being realized are extremely remarkable.

[Brief explanation of the drawing]

FIG. 1 is a side cross-sectional view of the main parts of a photocoupler according to an embodiment of the present invention, and FIG. 2 is a diagram showing the main steps for producing the photocoupler 17 in order of process. In the figure, 1 is a glass cutting plate, 2 is a SiO□ layer formed on two sides of the W plate 1 and serves as a light guide path, and 3 and 4 are SiO
□ A pair of transparent electrodes formed of ITO (In, T+, 0) spanning from each opposing end of layer 2 to a part of the two sides of substrate 1, 5.7 is a-5iC layer, 6 is ia -5i layer,
81', J: Al! Electron folding layer consisting of, 9 is p'a-S
i layer, 10 is i a-Si layer, 11 is 0''a-5i layer,
12 is an electrode layer made of 8ρ, I3 is a 5in layer for confining light in the 5i0z layer 2, 14 is a light emitting element, 15
1 is a photodetecting element, and 16 is a light guiding element. Figure 1

Claims (2)

[Claims] (1) A photovoltaic device comprising a light-emitting element formed by selectively laminating amorphous silicon or a compound of amorphous silicon, a photodetector element, and a light guide element connected to each other on the same substrate. coupler. (2) The light emitting element is configured by sandwiching an amorphous silicon layer between a pair of amorphous silicon carbide layers, and the photodetecting element connects the amorphous silicon and the amorphous silicon. Patent La, characterized in that a light emitting element and a photodetecting element are connected and formed on the same substrate by the light guiding element made of silicon oxide.