JPS60200433A - Field emission liquid metal ion source - Google Patents
Field emission liquid metal ion sourceInfo
- Publication number
- JPS60200433A JPS60200433A JP59054340A JP5434084A JPS60200433A JP S60200433 A JPS60200433 A JP S60200433A JP 59054340 A JP59054340 A JP 59054340A JP 5434084 A JP5434084 A JP 5434084A JP S60200433 A JPS60200433 A JP S60200433A
- Authority
- JP
- Japan
- Prior art keywords
- metal ion
- alloy
- ion source
- liquid metal
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001338 liquidmetal Inorganic materials 0.000 title claims description 15
- 239000000463 material Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 18
- 229910002065 alloy metal Inorganic materials 0.000 claims description 10
- 239000010953 base metal Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 40
- 230000008018 melting Effects 0.000 description 17
- 238000002844 melting Methods 0.000 description 17
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000010884 ion-beam technique Methods 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001325 element alloy Inorganic materials 0.000 description 3
- 239000006023 eutectic alloy Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 241000282373 Panthera pardus Species 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
この発明はイオン加工装置、イオン注入装置などに用い
る電界放出型液体金属イオン源に関し、更に詳しくは液
体金属イオン源の合金金属イオン種材に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a field emission type liquid metal ion source used in ion processing equipment, ion implantation equipment, etc., and more particularly relates to an alloy metal ion seed material for a liquid metal ion source.
力゛リウム砒素等の半導体基板結晶にレーザ、発光ダイ
オード、光検知器などの光デバイス、各種トランジスタ
、ダイオードなどの電子デバイスを形成する場合、ｐ型
、ｎ型又は双方の不純物イオンの注入が必要であり、当
然のことながらイオン注入工程では、イオン注入装置の
イオン源の取り替え、レジストマスクの作成などの煩雑
な作業の繰返しが行われる。一方、最近提案されている
サブミクロンのオーダで収束さ−３−
れたイオンビームを用いるマスクレスイオン注入方法で
はハードウェア上の変更を無くシ、すべてソフトウェア
でプロセスを制御することが可能と考えられる。しかし
、このマスクレスイオン注入方法においても、既にイオ
ンを注入した領域の上に重ねて第２のイオン注入を行う
場合、イオン源を交換するとイオン発生部とイオン加乗
収束系、イオン偏向電極系の間に厳しい軸合せを必要と
し、大変手間を取ることになる。When forming optical devices such as lasers, light-emitting diodes, and photodetectors, and electronic devices such as various transistors and diodes on semiconductor substrate crystals such as pyrotron arsenide, it is necessary to implant p-type, n-type, or both impurity ions. As a matter of course, in the ion implantation process, complicated operations such as replacing the ion source of the ion implanter and creating a resist mask are repeatedly performed. On the other hand, with the recently proposed maskless ion implantation method that uses a focused ion beam on the order of submicrons, it is thought that the process can be controlled entirely by software without any hardware changes. It will be done. However, even in this maskless ion implantation method, if the second ion implantation is performed on top of the area where ions have already been implanted, replacing the ion source will cause the ion generation section, ion multiplier focusing system, and ion deflection electrode system to Strict axis alignment is required during this process, which takes a lot of time.
従って、一つのイオン発生部よりイオン源を交換するこ
となく、ｐ型、ｐ型及びアイソレーションのための不純
物イオンを選択的に発生できれば殆どの集積回路デバイ
ス作成工程中でハードウェアの変更、調整を行うことな
く、ソフトウェアの制御のみで同一基板をこ高集積化さ
れた信頼度の高い光−電子デバイスの製造が容易に可能
となる。Therefore, if p-type, p-type, and impurity ions for isolation can be selectively generated from a single ion generator without replacing the ion source, hardware changes and adjustments can be made during the manufacturing process of most integrated circuit devices. It becomes possible to easily manufacture highly integrated and highly reliable opto-electronic devices on the same substrate using only software control without having to carry out any process.
■−ｖ族化合物半導体基板結晶にイオン注入を行うため
のイオン種としてはこれまで、ｐ型ではＢｇｑｓ型では
８（が代表的なものであることしかし、Ｂｇ 、 ８ｉ
を液体金属イオン源の合金金属イオン種材として用いる
場合、いずれも融点が高く、蒸気圧も高いため、融点を
下げる目的で麺との共晶合金の形で使われるのが一般的
で、これらの共晶合金、Ａｍ −Ｂｇ ％ Ａｓｈ −
Ｓｉを使ってマスクレスのイオン注入が既に行われてい
る。更に本出願人はこのＡｕ −Ｂｇ及びＡｍ−８４共
晶合金型のイオン種材の延長として、双方のイオンを含
むＡｓｈ −８４−Ｂｇの三元合金を提案した（特願昭
５７−１０５３９８号）。■-V group compound semiconductor substrate The ion species used for ion implantation into crystals have so far been 8 (typical for p-type and Bgqs-type). However, Bg, 8i
When used as an alloy metal ion seed material for a liquid metal ion source, they all have high melting points and high vapor pressures, so they are generally used in the form of a eutectic alloy with noodles to lower the melting point. eutectic alloy of Am −Bg % Ash −
Maskless ion implantation has already been performed using Si. Furthermore, as an extension of this Au-Bg and Am-84 eutectic alloy type ion seed material, the present applicant proposed a ternary alloy of Ash-84-Bg containing both ions (Japanese Patent Application No. 105398/1982). ).
しかるに、更に技術の進歩によりｐ型とｐ型の不純物元
素のみでなく、基板に形成した各デバイス間のアイソレ
ーションを完全にするために、Ｂの如きアイソレーショ
ンのための不純物元素を含むような合金金属イオン種材
の実現の要求が高まってきた。この要求にこたえて、本
出願人はＰｄ−８４−Ｂｅ −Ｂから成る四元合金を提
−よ−
案した（特願昭５９−４７５２号）。However, with further advances in technology, in addition to p-type and p-type impurity elements, in order to achieve complete isolation between each device formed on the substrate, impurity elements such as B for isolation are being added. There has been an increasing demand for the realization of alloyed metal ion seed materials. In response to this demand, the present applicant proposed a quaternary alloy consisting of Pd-84-Be-B (Japanese Patent Application No. 59-4752).
第１図は電界放出型液体金属イオン源の概略構造の一例
を示し、エミッタ電極ｌは電極母体コの先端に支持され
、エミッタ電極ｌの胴部は電極母体−より突設された環
状部材３により囲まれ、両者によって形成された環状空
間はリザーバ（溜）となり、上述の合金金属イオン種材
ダが装填されることになる。FIG. 1 shows an example of a schematic structure of a field emission type liquid metal ion source, in which an emitter electrode l is supported at the tip of an electrode base body, and a body of the emitter electrode l is an annular member 3 protruding from the electrode base body. The annular space formed by the two becomes a reservoir, and the above-mentioned alloy metal ion seed material is loaded therein.
エミッタ電極ｌを電極母体λを介して所定の温度に加熱
し、イオン種材ｌは溶融温度に達すると電極ダの胴部を
伝わり先端部に向って流動し、電極ダは溶融している合
金金属イオン種材で被覆された状態となる。このような
状態に達したら、エミッタ電極ｌとその前方に配置した
イオン引き出し電極ｊに数ＫＶの電圧を印加すると電界
蒸発、電界電離などにより、エミッタ電極／の先端より
イオンビーム≦が放出されることになる。イオン種材参
とエミッタ電極／の濡れが良いと、イオンビームの放出
に伴って、溶融しているイオン種材の電極先端への流動
が滑６−
らかに行われ、イオンビームの放出が安定に継続して行
われることになる。The emitter electrode l is heated to a predetermined temperature via the electrode base body λ, and when the ion seed material l reaches the melting temperature, it flows through the body of the electrode and towards the tip, and the electrode is made of a molten alloy. It will be in a state where it is coated with metal ion seed material. When such a state is reached, when a voltage of several KV is applied to the emitter electrode l and the ion extraction electrode j placed in front of it, an ion beam ≦ is emitted from the tip of the emitter electrode / due to field evaporation, field ionization, etc. It turns out. When the ion seed material and the emitter electrode are well wetted, the molten ion seed material flows smoothly to the electrode tip as the ion beam is emitted, and the ion beam is emitted. This will continue in a stable manner.
この液体金属イオン源のエミッタ電極／は通常タングス
テンで構成されており、上述のｐｄ −８ｉ −Ｂｇ
−Ｈの四元合金をイオン種材として用いたとき、エミッ
タ電極との濡れがあまりよくな゛スフレスイオン注入に
おいては致命的な欠点と１なる。The emitter electrode of this liquid metal ion source is usually made of tungsten, and the above-mentioned pd -8i -Bg
When a -H quaternary alloy is used as an ion seed material, wetting with the emitter electrode is not very good, which is a fatal drawback in free-flow ion implantation.
ｊシ１この発明は上記に鑑み、ｐ型、ｐ型及びアイソレ
ーション用の不純物元素を含み、タングステンエミッタ
電極との濡れが優れている液体金属イオン源の合金金属
イオン種材を開発するため鋭意研究の結果、先に提案し
たＰｄ −Ｓｊ −Ｂｇ −Ｂから成る四元合金中の母
体金属として用いたＰｄに更に母体金属としてＮｉｆ加
えて三元合金とすることによシタングステンとの濡れが
改善され、−７−
安定なイオンビームの放出が継続して得られることを見
出してこの発明を完成した。In view of the above, this invention has been made to develop an alloy metal ion seed material for a liquid metal ion source that contains p-type, p-type and isolation impurity elements and has excellent wetting with a tungsten emitter electrode. As a result of research, wetting with tungsten was improved by adding Nif as a base metal to Pd used as a base metal in the quaternary alloy consisting of Pd -Sj -Bg -B proposed earlier. The present invention was completed by discovering that improved and -7- stable ion beam emission could be continuously obtained.
以下、この発明を第２図に基いて説明すると、第２図（
α）はＰｃ！ −Ｂｅ合金の組成比と融点の関係を示す
グラフであって、Ｐｄ、Ｂｅ共に単体であると融点が１
５００℃前後であるが、Ｂｇが２重量％程度含まれた合
金の融点は約９３０℃に下がる。一方、Ｐｄ−８４合金
金場合は第２図（ｂ）に示すように、Ｓｉが４〜５重量
％Ｐｄに添加された合金は融点が８００℃近くまで下が
る。また、Ｂｅ ８ｉ合金の場合は第２図（１）に示す
ように８４が６０重量％程度含まれたときの合金の融点
は１０００℃以下となる。Hereinafter, this invention will be explained based on FIG. 2.
α) is Pc! - A graph showing the relationship between the composition ratio and melting point of a Be alloy, in which the melting point is 1 when both Pd and Be are alone.
Although it is around 500°C, the melting point of an alloy containing about 2% by weight of Bg drops to about 930°C. On the other hand, in the case of Pd-84 alloy gold, as shown in FIG. 2(b), the melting point of the alloy in which 4 to 5% by weight of Si is added to Pd decreases to nearly 800°C. Further, in the case of Be 8i alloy, as shown in FIG. 2 (1), when 84 is contained in an amount of about 60% by weight, the melting point of the alloy becomes 1000° C. or lower.
：、更にＢの単体の融点は１５００℃以上であるが、Ｂ
が約３．５重量％含んだＰｄ −＝ Ｂ合金の融点は第
２図（ｄ）に示すように８５０℃以下となる。また、Ｂ
−Ｎｉ合金の場合は第２図（１）に示すようにＢが１３
重景％程度含まれたときの合金の融点は約１０００℃と
なる。:, furthermore, the melting point of B alone is 1500°C or higher, but B
The melting point of the Pd −= B alloy containing about 3.5% by weight of Pd −=B is 850° C. or less, as shown in FIG. 2(d). Also, B
- In the case of Ni alloy, B is 13 as shown in Figure 2 (1).
The melting point of the alloy when it contains about 1% is about 1000°C.
上記の事実に基き、検討、実験を重ねた結果、母体金属
としてのＰｄに対してＮｊを加え、その組成比が７０〜
ｓｏ ： ２０〜３０重量％の範囲の合金はタングステ
ンに対して濡れが良くなる。また上記の組成比の母体金
属と、■−ｖ族化合物半導体のれ型の不純物元素となる
Ｂ１５ｐ型の不純物元素となるＢｅ％アイソレーション
用の不純物元素となるＢを不純物の合計とが９３０〜９
６．５ ： ３．５〜７．０重量％の範囲の割合で構成
された五元合金の融点は９００℃以下で、溶融したとき
にタングステンに対して良好な濡れを示し、電界放出型
液体金属イオン源の合金金属イオン種材として好適に用
いることができる。Based on the above facts, as a result of repeated studies and experiments, we added Nj to Pd as the base metal, and the composition ratio was 70~
so: An alloy in the range of 20 to 30% by weight has good wettability with tungsten. In addition, the total impurity of the base metal with the above composition ratio and the impurity element of B15 which becomes the impurity element of the Leopard type of the ■-V group compound semiconductor and B which becomes the impurity element of the p-type % isolation is 930~ 9
6.5: The melting point of a quinary alloy composed of a proportion in the range of 3.5 to 7.0% by weight is below 900°C, shows good wetting to tungsten when melted, and is a field emission type liquid. It can be suitably used as an alloy metal ion seed material for a metal ion source.
上記の三種の８４−Ｂ＋＋−Ｂ不純物元素の添加比３．
５〜７．０重量％の詳細はＳｌが１．５〜２．５重量％
、Ｂ６が０．５〜２．０重量％、Ｂが１．５〜２５重量
％である。Addition ratio of the above three types of 84-B++-B impurity elements 3.
Details of 5 to 7.0% by weight are 1.5 to 2.5% by weight of Sl.
, B6 is 0.5 to 2.0% by weight, and B is 1.5 to 25% by weight.
母体金属Ｐｄ 、 Ｎｉに対する不純物元素の添加比が
上記の範囲であると、得られた合金の融点は８００〜９
００℃程度の範囲内となるが、添加比が上記範囲を超え
ると、特にＢの添加量が多くなると、融点は急激に上昇
し、１０００℃以上となると合金金属イオン種材として
は不適当となる。When the addition ratio of impurity elements to the base metals Pd and Ni is within the above range, the melting point of the obtained alloy is 800 to 9.
However, if the addition ratio exceeds the above range, especially if the amount of B added increases, the melting point will rise rapidly, and if it exceeds 1000°C, it will be unsuitable as an alloy metal ion seed material. Become.
９−
次にこの五元合金の製造法の一例を述べると、所定量秤
量した三種の元素を真空状態の容器に入れ、次いでＡｒ
ガスを導入して、Ａｒガス雰囲気中で１５００℃程度で
加熱することにより溶融し、各元素が均等に分散したら
加熱を停止することにより合金金属イオン種材として好
適に用いられる五元合金が得られる。9- Next, to describe an example of the method for manufacturing this five-element alloy, a predetermined amount of the three elements weighed out is placed in a vacuum container, and then Ar
A five-element alloy suitable for use as an alloy metal ion seed material is obtained by introducing a gas and heating it at about 1500°C in an Ar gas atmosphere to melt it, and then stopping the heating when each element is evenly dispersed. It will be done.
以上、原因は未だに解明されていないが、母体金属とし
てＰｄにＮ１を加えた二元合金を用いて合金金属イオン
種材を構成することにより液体金属イオン源エミッタ電
極として用いられているタングステンに対する濡れが改
善され、安定したイオンビームの放出を連続して行うこ
とができるので、最近提案されているサブミクロンのオ
ーダで収束されたイオンビームによるマスクレスイオン
注入に利用し、高集積化された電子デバイス、光デバイ
スの形成が効率良く行われることになる。As mentioned above, although the cause has not yet been elucidated, by constructing the alloy metal ion seed material using a binary alloy of Pd and N1 as the base metal, wetting of tungsten, which is used as the emitter electrode of the liquid metal ion source, is reduced. As the ion beam has been improved and stable ion beam emission can be performed continuously, it can be used for maskless ion implantation using a focused ion beam on the order of submicrons, which has recently been proposed, and can be used for highly integrated electron beams. Devices and optical devices can be formed efficiently.
次にこの発明を実施例により説明する。Ｐｄ７．４５
ｆ ）Ｎｉ ２．１ ｆ 、 Ｓ４０．１８ ｆ ＳＢ
ｇｏ、０７ ｔ 、 Ｂ１０−
０．１９ ｆを秤量し、ＢＮ製坩堝へ入れ真空とした後
にＡｒガスを導入し、Ａｒガス雰囲気中で坩堝を約１６
００℃の温度で加熱し、溶融させて五元合金を得た。こ
の合金の融点は約８００℃であった。Next, the present invention will be explained with reference to examples. Pd7.45
f) Ni 2.1 f, S40.18 f SB
go, 07 t, B10-0.19 f was weighed, placed in a BN crucible and evacuated, then Ar gas was introduced, and the crucible was heated in an Ar gas atmosphere for about 16
A five-element alloy was obtained by heating and melting at a temperature of 00°C. The melting point of this alloy was approximately 800°C.
この合金はイオン種材として液体金属イオン源のエミッ
タ電極のリザーバに装填し、エミッタ電極と引き出し電
極に６ＫＶを印加することによりイオンビームが電極先
端より放出され、このイオンビームの放出を１０分間継
続して行ったが、途絶えは見られず、極めて安定であっ
た。This alloy is loaded as an ion seed material into the reservoir of the emitter electrode of a liquid metal ion source, and by applying 6KV to the emitter electrode and extraction electrode, an ion beam is emitted from the tip of the electrode, and this ion beam emission continues for 10 minutes. However, no interruption was observed and the situation was extremely stable.
この放出された混合イオンビームは質量分離器を制御す
ることにより目的とするイオン種のイオンビームのみ選
択的に分離し、半導体基板へ導くことができた。By controlling the mass separator, this emitted mixed ion beam could be selectively separated into only the ion beam of the desired ion species and guided to the semiconductor substrate.
第１図は電界放出型液体金属イオン源の概略構成図、第
２図（α）〜（＃）はそれぞれＰｄ−胸、Ｐｄ−８４、
Ｂｇ−８ｉ 、 Ｐｄ −Ｂ 、 Ｎｉ −Ｂ合金の組
成比と融点の関係を示すグラフである。
ｌ・・・エミッタ電極、λ・・・電極母体、ダ・・・合
金−／／−
金属イオン種材、！・・・イオンσ［き出し電極。
特許出願人 工業技術院長 川田裕部
特開昭ＧＯ−２００４３３（５）
（Ｓｉｔ−ｔ’／。）
１５００ （ｃ）
・・４００Ｆ ／
−Ｎｉ
（Ｂ刺１’１０）
七−
１０５０７０８０９０
Ｂｅ−５ｉ（Ｓｉｔｉ’ん）
Ｐｄ−Ｂ（Ｂ重量０１０）Figure 1 is a schematic diagram of the field emission type liquid metal ion source, and Figure 2 (α) to (#) are Pd-chest, Pd-84, Pd-84,
It is a graph showing the relationship between the composition ratio and melting point of Bg-8i, Pd-B, and Ni-B alloys. l...emitter electrode, λ...electrode base, da...alloy-//- metal ion seed material,! ...Ion σ [extraction electrode. Patent applicant Hirobe Kawada, Director of the Agency of Industrial Science and Technology JP-A-200433(5) (Sit-t'/.) 1500 (c)...400F/-Ni (B 1'10) 7-1050708090 Be-5i( Pd-B (B weight 010)
Claims (4)
填される合金金属イオン種材と該エミッタ電極の前方に
設けられたイオン引き出し電極とから成る電界放出型液
体金属イオン源において、 該合金金属イオン種材は母体金属と龍型不純物元素とｐ
型不純物元素とアイソレーション用不純物元素を含み、
母体金属はＰｄとＮ１とが７０〜８０ ： ２０〜３０
重量％の割合で構成していることを特徴とする電界放出
型液体金属イオン源。(1) In a field emission liquid metal ion source comprising an emitter electrode, an alloy metal ion seed material loaded in a reservoir of the emitter electrode, and an ion extraction electrode provided in front of the emitter electrode, the alloy metal ion seeds The materials are the base metal, the dragon-shaped impurity element, and p
Contains type impurity elements and isolation impurity elements,
The base metal is Pd and N1 in a ratio of 70 to 80: 20 to 30.
A field emission type liquid metal ion source characterized in that it is composed of % by weight.
９７：３〜７重量％である特許請求の範囲第１項記載の
液体金属イオン源。(2) The total of the base metal and the three impurity elements is 9:3 or more
97:3 to 7% by weight of the liquid metal ion source according to claim 1.
−− アイソレーション用不純物元素がＢである特許請求の範
囲第１項記載の液体金属イオン源。(3) The %-type impurity element is S (, the p-type impurity element is S,
-- The liquid metal ion source according to claim 1, wherein the impurity element for isolation is B.
重量％、Ｂが１．５〜２．５重量％の範囲である特許請
求の範囲第１項ないし第３項のいずれかに記載の液体金
属イオン源。(4) st is 1.5 to 15% by weight, Be is 05 to zO
4. A liquid metal ion source according to any one of claims 1 to 3, wherein B is in the range of 1.5 to 2.5% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59054340A JPS60200433A (en) | 1984-03-23 | 1984-03-23 | Field emission liquid metal ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59054340A JPS60200433A (en) | 1984-03-23 | 1984-03-23 | Field emission liquid metal ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60200433A true JPS60200433A (en) | 1985-10-09 |
| JPH0414456B2 JPH0414456B2 (en) | 1992-03-12 |
Family
ID=12967872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59054340A Granted JPS60200433A (en) | 1984-03-23 | 1984-03-23 | Field emission liquid metal ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60200433A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237651A (en) * | 1986-04-08 | 1987-10-17 | Nec Corp | Ion source for ion implanting apparatus |
| CN111534841A (en) * | 2020-04-14 | 2020-08-14 | 北京航空航天大学 | Reversible wetting of an electric field-induced liquid metal on metal substrates and its application |
-
1984
- 1984-03-23 JP JP59054340A patent/JPS60200433A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237651A (en) * | 1986-04-08 | 1987-10-17 | Nec Corp | Ion source for ion implanting apparatus |
| CN111534841A (en) * | 2020-04-14 | 2020-08-14 | 北京航空航天大学 | Reversible wetting of an electric field-induced liquid metal on metal substrates and its application |
| CN111534841B (en) * | 2020-04-14 | 2021-07-30 | 北京航空航天大学 | Reversible wetting of an electric field-induced liquid metal on metal substrates and its application |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0414456B2 (en) | 1992-03-12 |
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| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |