JPS60200960A - Formation of sputtered alloy film for diffusion joining - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an insert method for diffusion bonding of various materials, and in particular, a method of forming a sputtered film by sputter vapor deposition as an insert method suitable for diffusion bonding of heat-resistant alloys. Regarding.

[Background of the invention]

Diffusion bonding methods are classified into two types: in-phase diffusion bonding method and liquid phase diffusion bonding method. In the solid-phase diffusion bonding method, relatively high pressure is applied during bonding to ensure close contact between the bonding surfaces.

oxidation) affects bonding performance (bonding defects).

Therefore, in order to improve the adhesion between the bonding surfaces and obtain a healthy diffusion bond, a method is often used in which the bonding surfaces are bonded via an insert material.

However, since the insert 1 to the material are interposed between the bonding surfaces, a long bonding time is required to obtain a homogeneous diffusion bonded portion.

In the liquid phase diffusion bonding method, inserts 1 to 1 are placed between the bonding surfaces of the bonding members.
When the insert material is interposed and heated to the bonding temperature, the insert material melts and becomes a liquid phase that fills the space between the bonding surfaces. Thereafter, mutual diffusion between the liquid phase and the joining member occurs in this state, and as the composition approaches that of the joining member, isothermal solidification occurs and the phase becomes the same.
This is a bonding method in which diffusion progresses further and the composition becomes the same as that of the bonding member. (U.S. Pat. No. 363,219, U.S. Pat. No. 3,678,570) However, since this method uses foil or powder as an insert method, it may cause misalignment or damage from the bonding surface, making it easy to cause bonding defects or oxidation at the bonding area. Things tend to exist. Furthermore, the insert work process is time consuming and has poor workability. When a multi-component alloy including a joining member is used as an insert material, the multi-component alloy is brittle and therefore has limited use.

Furthermore, since the inserter is interposed between the bonding surfaces, a long bonding time is required to obtain a homogeneous diffusion bond.

[Purpose of the invention]

An object of the present invention is to make it possible to uniformly form a diffusion bonding insert film containing the composition of the materials to be bonded on the bonding surface,
Another object of the present invention is to provide a method for forming an alloy sputtered film for diffusion bonding, which simplifies the bonding work, prevents defective bonding, and provides a high-quality diffusion bonded portion.

[Summary of the invention]

In the present invention, when forming an alloy sputtered film for diffusion bonding on the bonding surface of materials to be bonded by sputter deposition, the target structure of a sputter deposition apparatus is made of an alloy member for bonding and a member having the same composition as the materials to be bonded. This composite targeter 1 has a structure in which a bonding alloy sputtered film is formed on the bonding surfaces of the materials to be bonded.

[Embodiments of the invention]

Next, the method for forming the alloy sputtered film for diffusion bonding of the present invention will be explained in the first step.
This will be explained based on the figure and FIG.

FIG. 1 shows an outline of a magnetron type sputtering apparatus, and FIG. 2 shows a composite target structure. Dilute Ar in chamber 6
In an atmosphere, as shown in Fig. 2, a composite target consisting of a bonding alloy member 8 and a welding member 5 is placed on a backing plate 1 and a target plate 1-1, and magnets N and S are attached.
By the electrons trapped in the magnetic field 2 formed by the above, the material 3 of the composite target is knocked out and attached to the bonding surface of the material to be bonded 5, thereby forming an alloy sputtered film 4.

Next, the materials 5 to be joined, on which the alloy sputtered film 4 has been formed on the joining surfaces by sputter vapor deposition, are diffusion-bonded as shown in FIG. That is, the sputtered alloy films 4 formed on the joint surfaces of the materials 5 to be joined are pressed and brought into close contact with each other, heated and maintained at a predetermined temperature, and joined, thereby obtaining a homogeneous joint.

As the material to be joined 5, metals, alloys, and inorganic materials, particularly heat-resistant alloys, are suitable. Heat-resistant alloys include Ni-based, C
O-based and Fe-based heat-resistant alloys are preferable. The joining alloy member 8 is desirably one that has good compatibility with the materials to be joined and has a fast diffusion rate into the materials to be joined. Therefore, the joining alloy member 8 can be made of metal, alloy, or other inorganic material.

Further, the joining alloy member 8 is preferably a metal, an alloy, or an inorganic material having a melting point lower than the solidus temperature of the materials 5 to be joined.

When the material to be joined is a Ni-based heat-resistant alloy, the joining alloy member constituting the composite targeter 1 contains N containing B, which can lower the melting point by forming a eutectic with Ni, which is a Ni-based heat-resistant alloy.
i-alloy is preferred. Furthermore, before forming a sputtered film on the bonded surface by sputter vapor deposition, if the bonded surface is cleaned with an Ar ion beam, a sputtered film with good adhesion can be formed.

Examples of the present invention will be described below.

Table 1 shows the chemical composition of the materials to be joined. The material to be joined is a precipitation-strengthened Ni-based heat-resistant alloy. As shown in FIGS. 1 and 2, an alloy sputtered film for diffusion bonding was formed on the bonding surfaces of the materials to be bonded using a magnetron sputtering device using a composite structure targeter l-.

Table 2 shows the composition of composite targetera 1-. As shown in Fig. 2, the structure attached to Targera 1 is a composite structure consisting of members having the same composition as the joining alloy material and the material to be joined.
-(Dimensions: 150ml+X], 20+++n+
The area ratio of the joining alloy material to the total area of
%, and the area ratio of members with the same composition as this month's composition is 25%.
And so. The composition of the bonding alloy material is a Ni alloy containing 462% B, which forms a eutectic with Ni, which is the main component of the Ni-based heat-resistant alloy, and lowers the melting point.

Next, Magne 1-ron sputtering was performed using a composite target. Table 3 shows the sputtering conditions. Magne 1
~ Ron spatsuta processing is performed on the material to be joined (dimensions: diameter 50■φ
2. Polish the joint surfaces of the materials to be joined with emery paper (#1000.) and place a crab on this joint surface.
2KW, Atmosphere: 3X10-'Torr Ar, Targera 1 to 70 volumes, Sputtering speed: 3.5X
An alloy sputtered film was formed by performing 15 m1n under the condition of 10-I μm/min.

Table 4 shows the characteristics of the alloy sputtered film. The thickness of the sputtered alloy film formed on the joint surface of the materials to be joined is approximately 5 μm, and is uniformly formed on the joint surface.

Further, the melting point of the sputtered alloy film is approximately 1120°C, which is approximately 130°C lower than the common phase temperature (approximately 1250°C) of the materials to be joined. Since the sputtered alloy film has good wettability to the materials to be joined, the sputtered alloy film is effective as a sputtered film for diffusion bonding.

Next, the Ni-based heat-resistant alloys having sputtered alloy films formed on their bonding surfaces were diffusion bonded under the conditions shown in Table 5 so that the sputtered alloy films were in contact with each other as shown in FIG. N
In the diffusion bonding of i-base heat-resistant alloys, there are no bonding defects or void defects, and a homogeneous bonding time of approximately 3 hours is obtained, and compared to conventional methods (RI and powder insert methods), the bonding time is approximately 115%. It's time.

Figure 4 shows the mechanical properties of the diffusion bond. The mechanical properties (tensile strength, 02% yield strength, elongation) of the diffusion bonded portion are comparable to those of the materials to be bonded.

Table 1 Table 2 Table 3 Table 4 Table 5 As described above, according to the present invention, unlike the conventional method in which the insert 1 to foil or powder is interposed on the joining surfaces of the materials to be joined, there is no misalignment or loss of the insert foil or powder. The process is simple and high-quality joints can be obtained without causing any oxidation or oxidation of the insert foil or powder during the joining process. Further, a multi-component alloy sputtered film can be formed uniformly and with high dimensional accuracy on the surfaces of the materials to be joined. Further, since the sputtered film for bonding obtained by the present invention includes the composition of the materials to be bonded, bonding can be performed in a short time, and a good diffusion bonded portion can be obtained.

[Brief Description of the Drawings] Fig. 1 is a schematic diagram showing a magnetron sputtering device, Fig. 2 is a schematic diagram showing a composite targeter 1 to groove structure, Fig. 3 is a diagram showing a diffusion bonding mode, The figure is a diagram showing the mechanical properties of the diffusion bonded portion and the materials to be bonded. 1...Target, 2...Magnetic field, 3...Targera 1
~ Constituent material, 4... Alloy sputtered film, 5- Material to be joined,
6...Chamber, 7...Backing play 1~. 8
・・・For joining Fig. 1 Fig. 2 l Fig. 3 Fig. 4〈To be joined @ Material〉〈Dispersion joint portion〉 115θ'Cx3h

Claims (1)

[Claims] 1. In a method of forming an alloy sputtered film for diffusion bonding on the joining surface of materials to be joined by sputter deposition, a target of a sputter deposition apparatus is joined to a member having the same composition as the material to be joined. 1. A method for forming an alloy sputtered film for diffusion bonding, characterized in that a composite structure is formed of metal members, and an alloy sputtered film is formed on the bonding surfaces of the materials to be bonded. 2. The method for forming a sputtered film for diffusion bonding according to claim 1, wherein the sputtered alloy film for diffusion bonding is an alloy sputtered film having a melting point lower than the melting point of the material to be bonded.