JPS60200968A - Electroless plating method - Google Patents

Electroless plating method

Info

Publication number
JPS60200968A
JPS60200968A JP5722284A JP5722284A JPS60200968A JP S60200968 A JPS60200968 A JP S60200968A JP 5722284 A JP5722284 A JP 5722284A JP 5722284 A JP5722284 A JP 5722284A JP S60200968 A JPS60200968 A JP S60200968A
Authority
JP
Japan
Prior art keywords
plating
gold
silver
electroless
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5722284A
Other languages
Japanese (ja)
Inventor
Kiyoto Hamamura
浜村 清人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5722284A priority Critical patent/JPS60200968A/en
Publication of JPS60200968A publication Critical patent/JPS60200968A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/42Coating with noble metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To improve the adhesive strength of an Ni layer as an underlayer to gold or silver when the Ni layer formed on a part to be plated by electroless plating is coated with gold or silver by substitution plating, by using a specified gold or silver plating soln. for substitution plating. CONSTITUTION:An Ni layer contg. phosphorus is formed on a part to be plated by electroless plating after forming an underlayer. A gold or silver layer is formed on the Ni layer by substitution plating with a gold or silver plating soln. for substitution plating contg. gelatin and an Se compound. A gold or silver layer of a desired thickness may be formed furthermore by electroless plating with an electroless gold or silver plating soln. contg. a B compound as a reducing agent. By this method the gold or silver layer shows remarkably improved adhesive strength to the Ni layer as an underlayer, so the reliability of the part of semiconductor housing to be bonded can be increased.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は無電解めっき方法C−係り、特に被めっき部に
密着性の極めて優れた金や銀からなる貴金属のめつきN
’l得ることか可能な無電解めっき方法に関するもので
ある。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to an electroless plating method C--particularly a method for plating N of precious metals made of gold or silver with extremely excellent adhesion to the plated area.
The present invention relates to an electroless plating method that can be obtained.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

例えば半導体素子の外囲器外部祠であるリードフンーム
、ヘッダピン、セラミックパッケージ基板等の一部に金
や銀からなる貴金属のボンディング線を直接ボンディン
グする部分、即ち被めっき部をボンディングし易い状態
C二するため、ボンディング線と同種の金や銀からなる
貴金属からなるめっき層が設けられている。
For example, the part where a noble metal bonding wire made of gold or silver is directly bonded to a part of the lead frame, header pin, ceramic package substrate, etc. that is the external shrine of the semiconductor device's envelope, that is, the part to be plated, is in a state C2 where it is easy to bond. Therefore, a plating layer made of the same noble metal as the bonding wire, such as gold or silver, is provided.

これらのめつき層は超LS I 、LSI 、IC。These plating layers are super LS I, LSI, and IC.

ハイブリッドICなど面密度のボンディング数を有する
製品が工業化するにつれてlケ所のボンディング不良が
多大の損失となるため、全てのボンディング部の被めっ
き部に、強□□□に被着形成されていなければならない
。そして、これらのめつき層は通常電気的に独立した部
分に設けられているので電解めっき方法C二よる形成が
無理であるため、無電解めっき方法が適している場合が
多い。
As products such as hybrid ICs that have a high bonding density are industrialized, defective bonding in one place will cause a huge loss. It won't happen. Since these plating layers are usually provided on electrically independent parts, it is impossible to form them by electrolytic plating method C2, so electroless plating method is often suitable.

次に従来の金や銀からなる黄金すの無電解めっき方法を
説明すると、これら貴金属の無電解めっきをする場合、
その下地は被めっき部(二形成された無電解ニッケルめ
っき層が用いられる。これは金や銀のめつきj(至)と
の密着性が他軸できるためである。従って、次亜リン酸
塩を用いた無電解ニッケルめっき液で形成したリンビア
乃至10%程度含むニッケルめっき)楠が強い密着力を
得やすいので常用されている。
Next, to explain the conventional electroless plating method for golden metals made of gold and silver, when performing electroless plating of these precious metals,
The base is an electroless nickel plating layer formed on the part to be plated. Limbia (nickel plating containing about 10% of nickel plating) formed with an electroless nickel plating solution using salt) is commonly used because it is easy to obtain strong adhesion.

このリンン含む無電解ニッケルめっき層上に金や銀を置
換めっきするめつき液としては、金の場合は、例えば のめつき液、帳の場合は、例えば のめつき液等のように錯化剤と少量の金属化合物を主と
する組成が知られている。
The plating solution for displacing gold or silver on this phosphorus-containing electroless nickel plating layer includes a complexing agent such as a plating solution for gold, and a plating solution for copper. It is known that the composition consists mainly of a small amount of metal compounds.

上述の組成のめつき液を使用して置換めっきをするには
、これらめっき液を通常95℃程度の高温で約10分間
浸せきすることC二より置換めっき層が得られるが、こ
の置換めっき層は0.05乃至0.1pm厚の薄いめっ
き層しか得られないのが普通である。
To perform displacement plating using a plating solution having the above composition, a displacement plating layer is obtained by immersing the plating solution at a high temperature of usually around 95°C for about 10 minutes. Usually, only a thin plating layer with a thickness of 0.05 to 0.1 pm can be obtained.

このため置換めっき後、還元剤を用いた無電解めっき液
により金の場合1.5μm以上、銀の場合4μm以上の
厚いめっきを行っている。
For this reason, after displacement plating, thick plating of 1.5 μm or more in the case of gold and 4 μm or more in the case of silver is performed using an electroless plating solution using a reducing agent.

上述の様に例えば被ボンディング膜を形成する無電解め
っき方法は確立されつつあるが、品位の安定性C二欠(
す工業化しにくい問題点がある。
As mentioned above, for example, electroless plating methods for forming bonding films are being established, but they lack quality stability (C).
However, there are problems that make it difficult to industrialize.

この問題点は下地のニッケル層と、金や銀との密着力の
弱いことに基因するボンディング歩留りのばらつきが大
きいことである。
The problem is that the bonding yield varies widely due to the weak adhesion between the underlying nickel layer and gold or silver.

即ち、還元剤を用いた無電解金、または無電解銀めっき
液ζ二よりニッケルめっき層上に無電解めっきをすると
、全く密着力が無いばかりか、自己触媒作用のあるめっ
き液の場合は析出が始らない。
That is, when electroless plating is performed on a nickel plating layer using electroless gold using a reducing agent or electroless silver plating solution ζ2, there is no adhesion at all, and if the plating solution has an autocatalytic action, precipitation does not start.

これを改良するためにニッケルやコバルト等の金族イオ
ンを共存させたり、各種の界面活性剤−¥添加させる方
法が試みられたが、充分な密着力が得られなかったりす
る間口点があり、少量または短期間のめつきにしか利用
できなかった。
In order to improve this, attempts have been made to coexist with metal group ions such as nickel and cobalt, or to add various surfactants, but there is a point where sufficient adhesion cannot be obtained. It could only be used in small quantities or for short periods of time.

〔発明の目的〕[Purpose of the invention]

本発明は、前述した問題点に雁みてなされたものであり
、例えは金や銀からなる貴金属線C二よる自動ボンディ
ング作業のような極めて制約された条件範囲内でも好適
な被めっき部に金や銀の無電解めっき脂な形成すること
が可能な無電解めっき方法を提供することを目的として
いる。
The present invention has been made in view of the above-mentioned problems, and it is possible to apply gold to a suitable part to be plated even within extremely restricted conditions, such as automatic bonding with a noble metal wire C2 made of gold or silver. The purpose of the present invention is to provide an electroless plating method that enables the formation of silver and silver.

〔発明の概要〕[Summary of the invention]

即ち、本発明は、下地の形成された被めっき部にリンを
含有する無電解ニッケルめっき層を形成する工程と、こ
の無電解ニッケルめっき層上C二セレン化合物を含有す
る金や銀の置換めっき液により金や銅の置換めっき層を
形成−jること、更にこの金や銀の置換めっき層上にホ
ウ素化合物な還元剤とする金や銀の無電解めっき液C二
より所望厚の金や銀の無電解めっき層を形成する工程と
を少くとも具備することを特徴とする無電解めっき方法
である。
That is, the present invention includes a step of forming an electroless nickel plating layer containing phosphorus on a plating target area on which a base is formed, and a process of displacing gold or silver containing a C diselenium compound on the electroless nickel plating layer. Forming a gold or copper displacement plating layer using a liquid, and further depositing a desired thickness of gold or copper on this gold or silver displacement plating layer using a gold or silver electroless plating solution C2 using a boron compound as a reducing agent. This is an electroless plating method characterized by comprising at least a step of forming an electroless plating layer of silver.

〔発明の実施例〕[Embodiments of the invention]

次ζ二本発明の第[の実施例を説明する。 Next, a second embodiment of the present invention will be described.

先ず被めっき基体としてタングステンペーストをスフジ
ーン印刷して被めっき部を形成後、約1500℃で焼結
した下地としてのタングステン層?有するアルミナ基板
を用意する。
First, a tungsten paste is printed as a substrate to be plated to form a part to be plated, and then a tungsten layer as a base is sintered at about 1500°C. Prepare an alumina substrate with

次(:、このアルミナ基板を塩酸浸せき処理後水洗し、
貴会FA ”よる触媒付与を行なう。これ≦二は一般に
パラジウムが用いられる。これは次のリン?含有する無
電解ニッケルめっき層を選択的に析出させる化学処理で
ある。タングヌテン上(二のみ触媒付与を行う活性液と
しては、日本カニゼンKK製「活性液−No 3J等の
活性液が便利である。
Next (:, This alumina substrate was immersed in hydrochloric acid and then washed with water.
This is a chemical treatment that selectively deposits the next phosphorus-containing electroless nickel plating layer. As the activating liquid for application, activating liquid such as "Activating Liquid No. 3J" manufactured by Nippon Kanigen KK is convenient.

触媒付与が終ったのち、水aL、同社製「ブルーシュー
マー」液等によりリン含有の無電解ニッケルめっき数μ
m2行なう。
After the catalyst has been applied, the phosphorus-containing electroless nickel plating is coated with several μm of phosphorus-containing electroless nickel using water aL, the company's "Blue Schumer" solution, etc.
Let's do m2.

次に、この無電解ニッケルめっき層上に次の液組成の置
換金めつき液で約0.1μm厚の金めつき層ン形成する
Next, a gold plating layer having a thickness of about 0.1 μm is formed on this electroless nickel plating layer using a displacement gold plating solution having the following liquid composition.

このセレン液は予めシアン化カリウム012fi/l 
This selenium solution is prepared in advance with potassium cyanide 012fi/l.
.

酸化セレン′0.51/13の混合液としてIg Nし
たもの馨用いた。置換めっき条件は約95℃で10分間
浸せさとした。
A mixture of 0.51/13 selenium oxide and IgN was used. The displacement plating conditions were immersion at about 95° C. for 10 minutes.

置換金めつき後水洗し、直ちにホウ素化合物を還元剤と
する無電解金めつき液(二で1.5乃至2.0μmの範
囲内で金めつきを行う。この無電解金めつき液としては
、日本エンゲル八ルドKK製「オーラックス液」等が知
られており、厚付金めつきが容易である。この金めつき
の条件は通常空気撹拌をしながら75℃で約2μm /
Hrのめつき速度が得られる。
After displacement gold plating, wash with water and immediately conduct gold plating within the range of 1.5 to 2.0 μm using an electroless gold plating solution (2) using a boron compound as a reducing agent. "Aurax liquid" made by Japan Engel Häld KK is known, and thick gold plating is easy.The conditions for this gold plating are usually about 2 μm / 2 μm at 75°C with air agitation.
A plating speed of Hr is obtained.

このようにしてアルミナ基板上に無光沢の金表面を有す
る被ボンディング部が多数形成された。
In this way, a large number of bonding target parts having matte gold surfaces were formed on the alumina substrate.

前述した被ボンディング部に金線を使用して自動ボンデ
ィングにより数100ケ所を連続的にボンディングした
結果は何らのトラブルもなく、引張り強さも均一で金め
つき面から断線する事故も皆無であった。
The results of continuous automatic bonding of several hundred points using gold wire as described above for the bonded parts showed no problems, the tensile strength was uniform, and there were no accidents in which the wire broke from the gold-plated surface. .

これに対しゼラチンとセレン液な添加しなかった組成の
置換金めつき液で得られた金めつき層は、セロファンテ
ープによる引き剥し試験で簡単C二はかれ、厚付合めつ
きをするC二至らなかったし、また厚付金めつきを試み
たかめつきふくれ不良を発生し、使用不可能であった。
On the other hand, a gold plating layer obtained with a substitution gold plating solution that does not contain gelatin and selenium solution peels off easily in a peel test using cellophane tape, and it is possible to achieve thick plating. However, when trying to apply thick gold plating, a blistering problem occurred, making it unusable.

次(二本発明の第2の実施例を説明する。但し被めっき
基体とリン含有のニッケルめっき層の形成方法は第lの
実施例と同様であるので省略する。
Next, a second embodiment of the present invention will be described. However, since the method for forming the substrate to be plated and the phosphorus-containing nickel plating layer is the same as in the first embodiment, the explanation will be omitted.

無電解ニッケルめっき層上に次の液組成の置換銀めっき
液で銀めつき膚乞形成する。
A silver plating layer is formed on the electroless nickel plating layer using a displacement silver plating solution having the following solution composition.

またセレン液は第1の実施例で示した混合液を用いた。The selenium solution used was the mixed solution shown in the first example.

この置換銀めっきは95℃で約2分間行い、直ち6ユ水
洗後ホウ素化合物を還元剤とする無電解銀めっき液によ
り約4μmのめつき厚Cユなるまでめつきン行なった。
This displacement silver plating was carried out at 95° C. for about 2 minutes, and immediately after washing with water for 6 hours, plating was carried out using an electroless silver plating solution using a boron compound as a reducing agent until a plating thickness of about 4 μm was obtained.

この無電解銀めっき液としては次の組成の液を使用し、
60℃で約1時間行なう。
As this electroless silver plating solution, a solution with the following composition is used.
This is carried out at 60°C for about 1 hour.

得られた被ボンデイング層は、均一な外観rなし、第1
の実施例と同様にボンディング膜は均一な外観を有し、
f441の実施例と同様、ボンディングの作業性、強さ
が均一であることが判明した。
The obtained layer to be bonded has a uniform appearance, no r, and a first layer.
Similar to the example, the bonding film has a uniform appearance;
As with the f441 example, it was found that the bonding workability and strength were uniform.

前述の様にゼラチンとセレン液を添加した置換めっき液
は置換めっき(二より消費する金、七レン等馨補充する
ことにより、再現良く長期間使用できる。なお錯化合物
は第1図及び$2の実施例のものばかりでなく、泊石酸
ナトリウム、クエン酸ナト9クム等の有機酸塩類、リン
酸塩類などが代替え出来る。
As mentioned above, the displacement plating solution to which gelatin and selenium solution have been added can be used for a long period of time with good reproducibility by replenishing the consumed gold, heptalene, etc. In addition to those in the examples, organic acid salts such as sodium nightstone and sodium citrate, phosphates, etc. can be substituted.

また下地のニッケルめっき液、及び厚伺金または銀めっ
き液も実施例に限定されるものではないか、水素化ホウ
素化合物及びその誘導体を還元剤とするめつき液が最適
であり、例えは水素化ホウ素ナトリクム等があり、各種
の組成が知られている。
In addition, the underlying nickel plating solution and thick gold or silver plating solution are not limited to those in the examples, and plating solutions that use boron hydride compounds and their derivatives as reducing agents are optimal. There are boron sodium, etc., and various compositions are known.

上述したセレン液すなわちセレン化合物な含む置換めっ
きは必ずしも被ボンディング膜の一部i二限定されるも
のではなく、装飾的な用途や防食めっき等C二も広く利
用できることは勿論である。
The above-mentioned displacement plating containing a selenium solution or a selenium compound is not necessarily limited to a part of the film to be bonded, and it goes without saying that it can be widely used for decorative purposes, anti-corrosion plating, etc.

従ッテニッケルやコバルト等の異種金属及び各種の界面
活性剤等を共存させた置換めっき液も考えられる。
A displacement plating solution containing different metals such as nickel and cobalt and various surfactants may also be considered.

即ち、例えば次の様な構成のめつき液である。That is, for example, the plating liquid has the following composition.

金めつき液としては 銀めっき液としては などであり、セレン液は第1及び第2の実施例と同様の
液である。
The gold plating solution is a silver plating solution, and the selenium solution is the same as in the first and second embodiments.

またセレン液は第l及第2の実施例と同様の液であり、
このセレン液は少鼠のセレンが存在していれば、リンを
含有する無電解ニッケルめっき層との密着力が向上す。
Moreover, the selenium liquid is the same liquid as in the first and second embodiments,
If a small amount of selenium is present in this selenium solution, the adhesion to the electroless nickel plating layer containing phosphorus will be improved.

ので過剰に加える必要はない。So there is no need to add too much.

このゼラチンとセレン液の添加による密着力の向上は、
無電解ニッケル層への吸着作用によるものと考えられる
。この吸着作用とは無電解ニッケル層の素面C:選択的
にセレンイオンを核としたゼラチンが集まり、金または
銀との界面(二密看を阻害する物質の吸着を防止しニッ
ケルと金または銀の置換が行なわれる作用である。
The improvement of adhesion by adding gelatin and selenium solution is
This is thought to be due to the adsorption effect on the electroless nickel layer. This adsorption effect is due to the fact that gelatin with selenium ions as its nucleus selectively gathers on the bare surface of the electroless nickel layer, and prevents the adsorption of substances that inhibit the interfacial bonding between nickel and gold or silver. This is an action that involves the replacement of .

〔発明の効果〕〔Effect of the invention〕

上述のように本発明(:よればセレン化合物を金または
銀の置換めっき液C:l−添加することによりリンン含
有する無電解ニッケルめっき層との密着力が者しく向上
した金または銀の無電解めっき層が得られるので半導体
外囲器の被ボンディング部などの信頼性を高めることが
できる。
As mentioned above, according to the present invention, the adhesion to the phosphorus-containing electroless nickel plating layer is significantly improved by adding a selenium compound to the gold or silver displacement plating solution C:1. Since an electrolytically plated layer is obtained, the reliability of the bonded portion of the semiconductor envelope can be improved.

代理人 弁理士 井 上 −男Agent Patent Attorney Inoue - Male

Claims (2)

【特許請求の範囲】[Claims] (1)下地の形成された被めっき部上に無電解ニッケル
めっき層を形成する工程と、この無電解ニッケルめっき
層上(ニゼラチンとセレン化合物を含有する金や銀の置
換めっき液により金や銀の置換めっき層を形成する工程
とを少くとも具備することを特徴とする無電解めっき方
法。
(1) The process of forming an electroless nickel plating layer on the part to be plated on which the base has been formed, and the step of forming an electroless nickel plating layer on this electroless nickel plating layer (gold or silver using a gold or silver displacement plating solution containing nigeratin and a selenium compound). An electroless plating method comprising at least the step of forming a displacement plating layer.
(2)下地の形成された被めっき部上(二無′屯解ニッ
ケルめっき層を形成する工程と、この無電解ニッケルめ
っき層上にゼラチンとセレン化合物を含有する金や銀の
置換めっき液により金や銀の無電解置換めっき層乞形成
する工程と、この無電解置換めっき層上にホウ素化合物
馨還元剤とする金や銀の無電解めっき液により所蹟厚の
金や銀の無電解めっき層を形成する工程と2少くとも具
備することを特徴とする無電解めっき方法。
(2) On the part to be plated on which the base has been formed (a step of forming a nickel plating layer and a gold or silver displacement plating solution containing gelatin and selenium compounds on this electroless nickel plating layer) A process of forming an electroless displacement plating layer of gold or silver, and electroless plating of gold or silver with a certain thickness using a gold or silver electroless plating solution using a boron compound as a reducing agent on this electroless displacement plating layer. An electroless plating method comprising at least two steps: forming a layer.
JP5722284A 1984-03-27 1984-03-27 Electroless plating method Pending JPS60200968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5722284A JPS60200968A (en) 1984-03-27 1984-03-27 Electroless plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5722284A JPS60200968A (en) 1984-03-27 1984-03-27 Electroless plating method

Publications (1)

Publication Number Publication Date
JPS60200968A true JPS60200968A (en) 1985-10-11

Family

ID=13049498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5722284A Pending JPS60200968A (en) 1984-03-27 1984-03-27 Electroless plating method

Country Status (1)

Country Link
JP (1) JPS60200968A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6484224A (en) * 1987-09-28 1989-03-29 Casio Computer Co Ltd Electrode forming method
US20120061698A1 (en) * 2010-09-10 2012-03-15 Toscano Lenora M Method for Treating Metal Surfaces
JP2016154139A (en) * 2015-02-12 2016-08-25 積水化学工業株式会社 Conductive particle powder, method for producing conductive particle powder, conductive material and connection structure
JP2022547264A (en) * 2020-08-14 2022-11-11 博敏▲電▼子股▲分▼有限公司 Processing method for electroless nickel displacement gold plating on the bottom of PCB stepped grooves

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6484224A (en) * 1987-09-28 1989-03-29 Casio Computer Co Ltd Electrode forming method
US20120061698A1 (en) * 2010-09-10 2012-03-15 Toscano Lenora M Method for Treating Metal Surfaces
JP2016154139A (en) * 2015-02-12 2016-08-25 積水化学工業株式会社 Conductive particle powder, method for producing conductive particle powder, conductive material and connection structure
JP2022547264A (en) * 2020-08-14 2022-11-11 博敏▲電▼子股▲分▼有限公司 Processing method for electroless nickel displacement gold plating on the bottom of PCB stepped grooves

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