JPS60201877A - Diamond grinding wheel composed of deposited artificial diamond particles - Google Patents

Diamond grinding wheel composed of deposited artificial diamond particles

Info

Publication number
JPS60201877A
JPS60201877A JP6034884A JP6034884A JPS60201877A JP S60201877 A JPS60201877 A JP S60201877A JP 6034884 A JP6034884 A JP 6034884A JP 6034884 A JP6034884 A JP 6034884A JP S60201877 A JPS60201877 A JP S60201877A
Authority
JP
Japan
Prior art keywords
polishing
reaction layer
diamond
artificial diamond
grinding wheel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6034884A
Other languages
Japanese (ja)
Other versions
JPH0474145B2 (en
Inventor
Noribumi Kikuchi
菊池 則文
Takayuki Shingyouchi
新行内 隆之
Hiroaki Yamashita
山下 博明
Akio Nishiyama
昭雄 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP6034884A priority Critical patent/JPS60201877A/en
Publication of JPS60201877A publication Critical patent/JPS60201877A/en
Publication of JPH0474145B2 publication Critical patent/JPH0474145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B24D3/10Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To improve the polishing performance by depositing artificial diamond particles with strong contacting force around coarse convex face of reaction layer with quite limited grain size distribution range. CONSTITUTION:Reaction layer composed of any one of W, MO, Nb and their alloy is applied onto the polishing face of metal or cermet substrate having the polishing face corroded coarsely through etching. Then artificial diamond particles having average grain size of 2-4mum are deposited with distribution area ratio of 50-60% and strong contacting force around the convex coarse face of said reaction layer. Then metal surface layer is formed onto the surface of such diamond grinding wheel through vacuum deposition or galvanization thus to exhibit excellent polishing performance for long term.

Description

【発明の詳細な説明】 この発明は、ダイヤモンド研磨砥石にかかり、特に析出
生成させた人工ダイヤモンド粒にて構成された新規なダ
イヤモンド研磨砥石に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a diamond polishing wheel, and particularly to a novel diamond polishing wheel composed of precipitated artificial diamond grains.

従来、一般に、超硬合金やその他のサーメット、さらに
セラミックスやガラスなどの研削・研磨にはダイヤモン
ド研磨砥石が用いられている。
Conventionally, diamond polishing wheels have been generally used for grinding and polishing cemented carbide, other cermets, ceramics, glass, and the like.

この従来ダイヤモンド研磨砥石は、例えばMやM合金の
基体の研磨作用面に、結合剤として、レジン樹脂や、C
uまたはNiなどの金属を用いて、天然ダイヤモンド粒
、あるいは超高圧高温合成によって製造された人工ダイ
ヤモンド粒を分散結合させた構造をもつものである。
This conventional diamond abrasive wheel uses resin resin or C as a bonding agent on the abrasive surface of the M or M alloy base.
It has a structure in which natural diamond grains or artificial diamond grains produced by ultra-high pressure and high temperature synthesis are dispersed and bonded using metals such as u or Ni.

したがって、上記の従来ダイヤモンド砥石においては、
天然ダイヤモンド粒や人工ダイヤモンド粒が高価である
ばか′りでなく、研磨面に影響を及ぼすダイヤモンド粒
をできるだけ狭い範囲の粒度分布に収めなければならな
いため、著しく長時間の分級工程を必要とすることから
、その製造コストは高くならざるを得ないものであった
Therefore, in the conventional diamond grinding wheel mentioned above,
Not only are natural diamond grains and artificial diamond grains expensive, but the diamond grains that affect the polished surface must be kept within a particle size distribution as narrow as possible, which requires an extremely long classification process. Therefore, the manufacturing cost had to be high.

そこで、本発明者等は、上述のような観点から狭い範囲
内の粒度分布をもったダイヤモンド粒で構成されたダイ
ヤモンド研磨砥石を製造コスト安く製造すべく研究を行
なった結果、まず、jVL、Cu。
Therefore, from the above-mentioned viewpoint, the present inventors conducted research in order to manufacture a diamond polishing wheel composed of diamond grains having a particle size distribution within a narrow range at a low manufacturing cost. .

Fe、 Ni、およびcoなど、さらにこれらの成分の
うちのいずれかを主成分として含有する合金からなる金
属、あるいは炭化タングステン(WC)基?−ノット、
炭化チタン(TIC)基サーメット、窒化チタン(TI
N)基サーメット、および炭窒化チタン(TiCN)基
サーメットなどのサーメットで製造され九基体の研磨作
用面を、酸あるいは電解などによシエッチング処理して
腐食し、このように腐食によシ粗面化した研磨作用面に
、W 、 Mo 、およびNb、並びにその合金のうち
のいずれかからなる反応層を、通常の化学蒸着法または
物理蒸着法;あるいは電解メッキ法または無電解メッキ
法などによって被覆し、この場合前記反応層によって前
記エツチング処理面が平滑化しないように、その被覆厚
さをできるだけ薄くし、この状態で、これを通常の人工
ダイヤモンド析出生成法、すなわち、反応混合ガスを加
熱し、活性化する手段として、(a)例えば特開昭58
−91100号公報に記載されるような熱電子放射材を
用いる方法、(b) 例えば特開昭58−135117
号公報に記載されるような高周波によるプラズマ放電を
利用する方法。
Metals such as Fe, Ni, and co, and alloys containing any of these components as main components, or tungsten carbide (WC) based? - knot,
Titanium carbide (TIC) based cermet, titanium nitride (TI
N)-based cermets and titanium carbonitride (TiCN)-based cermets are used to corrode the abrasive surfaces of the nine bases by etching them with acid or electrolysis. A reaction layer made of W 2 , Mo 2 , Nb, or an alloy thereof is applied to the planarized polishing surface by a conventional chemical vapor deposition method or physical vapor deposition method; or an electrolytic plating method or an electroless plating method. In this case, the thickness of the coating is made as thin as possible so that the etched surface is not smoothed by the reaction layer, and in this state, it is subjected to the usual artificial diamond precipitation method, that is, heating the reaction mixture gas. (a) For example, as a means of activating
A method using a thermionic emitting material as described in Japanese Patent Publication No. 91100, (b) For example, JP-A-58-135117
A method using high frequency plasma discharge as described in the above publication.

(C) 例えば特開昭58−110494号公報に記載
されるようなマイクロ波によるプラズマ放電を利用する
方法 以上(a)〜(C)のいずれかの方法によって処理する
と、前記反応層における粗面凸部を中心として強固な密
着力で人工ダイヤモンド粒が析出生成するようになり、
この結果形成された人工ダイヤモンド粒は粒度分布がき
わめて狭い範囲内にあることから、これを研磨砥石とし
て使用した場合すぐれた砥石性能を発揮するようになシ
、さらにこの表面にN1などの金属表面層を、通常の化
学蒸着法または物理蒸着法にて蒸着形成したシ、あるい
は電解メッキ法または無電解メッキ法によシメツキ形成
した場合には、前記析出生成人工ダイヤモンド粒の密着
性が一段と向上するようになシ、しかもこのダイヤモン
ド研磨砥石の製造コストは著しく安価であるという知見
を得たのである。
(C) A method using microwave plasma discharge as described in JP-A No. 58-110494. When treated by any of the methods (a) to (C) above, the rough surface of the reaction layer Artificial diamond grains begin to precipitate and form with strong adhesion around the convex parts,
The resulting artificial diamond grains have a particle size distribution within an extremely narrow range, so when used as a polishing wheel, they exhibit excellent grinding performance. When the layer is formed by vapor deposition using a normal chemical vapor deposition method or physical vapor deposition method, or when it is formed by plating using an electrolytic plating method or an electroless plating method, the adhesion of the precipitated artificial diamond grains is further improved. In addition, we have found that the manufacturing cost of this diamond polishing wheel is extremely low.

この発明は、上記知見にもとづいてなされたものであっ
て、 (1)研磨作用面がエツチング処理により腐食されて粗
面化した金属またはサーメットの基体と、前記基体の粗
面化した研磨作用面に被覆されたW 、 Mo 、およ
びNb、並びにその合金のうちのいずれかからなる反応
層と、 前記反応層における粗面凸部を中心として析出生成せし
めた人工ダイヤモンドiと、 で構成されたダイヤモンド研磨砥石。
The present invention has been made based on the above findings, and includes: (1) a metal or cermet base whose polishing surface has been roughened by corrosion through etching; and a roughened polishing surface of the base. a reaction layer made of any one of W, Mo, and Nb, or an alloy thereof, coated on the reaction layer; and artificial diamond i formed by precipitation mainly on the rough surface convex portions of the reaction layer. Polishing whetstone.

(2)研磨作用面がエツチング処理により腐食されて粗
面化した金属またはサーメットの基体と、前記基体の粗
面化した研磨作用面に被覆されたW、Mo、およびNb
、並びにその合金のうちのいずれかからなる反応層と、 前記反応層における粗面凸部を中心として析出生成せし
めた人工ダイヤモンド粒と、 さらに、その表面に蒸着またはメッキにょ多形成された
金属表面層と、 で構成されたダイヤモンド研磨砥石。 −に特徴を有す
るものである。
(2) A metal or cermet base whose polishing surface has been roughened by corrosion through etching, and W, Mo, and Nb coated on the roughened polishing surface of the base.
, and a reaction layer made of any of the alloys thereof; artificial diamond grains precipitated centering on the rough surface convex portions of the reaction layer; and a metal surface having a large amount of vapor deposited or plated on the surface thereof. A diamond polishing wheel consisting of layers and. - It has the following characteristics.

つぎに、この発明のダイヤモンド研磨砥石を実施例によ
シ具体的に説明する。
Next, the diamond polishing grindstone of the present invention will be specifically explained using examples.

実施例 1 基体として、重iチで、TiN: 3%、TiC: 3
%、 TaC: 3 %、 Co: 8%、WC:残シ
からなる組成を有し、かつ研磨作用面の寸法が外径ニア
Example 1 As a substrate, TiN: 3%, TiC: 3%
%, TaC: 3%, Co: 8%, WC: residue, and the dimensions of the polishing surface are near the outer diameter.

鴎φ×内径:50Bφの超硬合金(サーメット)製カッ
プ状砥石本体を用意し、まず、この砥石本体の研磨作用
面に、エツチング液として10%NaOH水溶液を用い
、6vの電圧をかけて90秒間の電解エツチング処理を
施すことによって、その研磨作用面を58の表面粗とし
た後、通常の化学蒸着装置に装入し、 反応ガス組成二モルチで、WF6:4%、CH30H:
15%、H2:35%、Ar:残り。
A cup-shaped grinding wheel body made of cemented carbide (cermet) with diameter φ x inner diameter 50 Bφ is prepared. First, a voltage of 6 V is applied to the polishing surface of the grinding wheel body using a 10% NaOH aqueous solution as an etching liquid. After the polishing surface was roughened to 58 degrees by electrolytic etching for 2 seconds, it was loaded into an ordinary chemical vapor deposition apparatus, and the reaction gas composition was 2%, WF6:4%, CH30H:
15%, H2: 35%, Ar: remainder.

反応ガス流量:2t/狐。Reaction gas flow rate: 2t/fox.

砥石本体加熱温度: 1000℃。Heating temperature of whetstone body: 1000℃.

反応時間:20分。Reaction time: 20 minutes.

の条件で化学蒸着処理を施すことによって、前記砥石本
体の粗面化した研磨作用面に、平均層厚。
By applying chemical vapor deposition treatment under the conditions, the roughened polishing surface of the grinding wheel body is coated with an average layer thickness.

1.2μmのW反応層を被覆形成し、引続いて、この化
学蒸着処理後の砥石本体を、反応混合ガスを加熱し、活
性化する手段として、例えば金属タングステン製フィラ
メントの熱電子放射材を用いる、特開昭58−9110
0号公報に記載されるような人工ダイヤモンド析出生成
装置に装入し、反応容器:外径120mxφを有する石
英管。
A 1.2 μm W reaction layer is coated on the grinding wheel body after the chemical vapor deposition treatment, and a thermionic emissive material such as a filament made of metallic tungsten is used as a means for heating and activating the reaction mixture gas. Used, Japanese Patent Application Publication No. 58-9110
A quartz tube having an outer diameter of 120 m x φ was charged into an artificial diamond precipitation generation apparatus as described in Publication No. 0.

反応混合ガス組成:容量割合で、CH4/H2−1/1
00゜ 熱電子放射材と砥石本体の研磨作用面との距離:15+
u+。
Reaction mixture gas composition: CH4/H2-1/1 in volume ratio
00° Distance between the thermionic emitting material and the polishing surface of the grindstone body: 15+
u+.

反応容器内雰囲気圧力ニ 10 torr 。The atmospheric pressure inside the reaction vessel was 10 torr.

熱電子放射材の加熱温度: 2200℃。Heating temperature of thermionic radiation material: 2200°C.

熱電子放射材による上記研磨作用面の加熱温度ニア50
℃。
The heating temperature of the polishing surface by the thermionic radiation material is near 50
℃.

反応処理時間:20時間。Reaction treatment time: 20 hours.

の条件で処理することによって、上記砥石本体の研磨作
用面における反応層上に、平均粒径:4μmを有する人
工ダイヤモンド粒を60%の分布面積割合で析出生成せ
しめた。
By processing under the following conditions, artificial diamond grains having an average grain size of 4 μm were precipitated and formed at a distribution area ratio of 60% on the reaction layer on the polishing surface of the grindstone body.

つぎに、この結果得られた本発明ダイヤモンド研磨砥石
、さらにその表面に通常の条件にて平均層厚:2μmの
Niを電気メッキして金属表面層を形成した本発明表面
被覆ダイヤモンド研磨砥石を用い、研磨面が2 ’i’
 0+ K調整され、かつ平面10jIJI0×厚さ5
Bの寸法を有する窒化けい素基セラミックス試片の前記
研磨面を研磨して、0.28に仕上げるのに要した時間
を測定したところ、いずれも35秒を要し、この所要時
間は、レジン樹脂がンドの同種の従来ダイヤモンド研磨
砥石と同等のもあてあった。
Next, the resulting diamond polishing wheel of the present invention was used, and furthermore, a surface-coated diamond polishing wheel of the present invention, on which a metal surface layer was formed by electroplating Ni with an average layer thickness of 2 μm under normal conditions, was used. , the polished surface is 2 'i'
0+ K adjusted and plane 10jIJI0 x thickness 5
The time required to polish the polished surface of the silicon nitride-based ceramic specimen having dimensions B to a 0.28 mm diameter was measured. It was also found to be equivalent to the same type of conventional diamond polishing whetstone made of resin.

実施例 2 基体として、黄銅で製造され、かつ両端面外径501u
ILφ×厚さ:15鰭の寸法をもった円板形状を有し、
さらに前記円板の研磨作用面となる外周面中央部に円周
にそって半径:5間の凸条を有するフォームド砥石本体
を用意し、まず、この砥石本体の研磨作用面を、5%硝
酸水溶液中に20秒間浸漬して粒界腐食を行ない、つい
で、このように研磨作用面をエツチング処理によシ粗面
化した砥石本体を、通常のスパッタリング装置に装入し
、反応容器内の真空度: 2 X 10−t、orr。
Example 2 The base is made of brass, and both end surfaces have an outer diameter of 501u.
ILφ×thickness: It has a disc shape with dimensions of 15 fins,
Furthermore, a formed whetstone main body having a convex strip with a radius of 5 mm along the circumference at the center of the outer circumferential surface which becomes the abrasive action surface of the disk is prepared, and first, the abrasive action surface of this whetstone main body is adjusted to 5%. The grinding wheel itself was immersed in a nitric acid aqueous solution for 20 seconds to cause intergranular corrosion, and then the grinding wheel body, whose polishing surface had been roughened by etching, was loaded into a conventional sputtering device and placed in a reaction vessel. Vacuum degree: 2 X 10-t, orr.

雰囲気: Ar 。Atmosphere: Ar.

反応容器の上部に配置されたMoiたはNbのターグッ
トに印加される電圧ニー1500V。
A voltage of 1500 V was applied to the Moi or Nb target placed at the top of the reaction vessel.

反応容器の下部に4回転/分の速度で回転させながら立
置き配置された砥石本体への印加電圧ニー 200 V
The voltage applied to the grindstone body, which was placed vertically at the bottom of the reaction container while rotating at a speed of 4 rotations/min, was 200 V.
.

反応時間:2時間。Reaction time: 2 hours.

の条件で蒸着処理を施すことによって、前記砥石本体の
研磨作用面(外周面)に、平均層厚:0.8μm−のM
OまたはNbの反応層を形成し、引続いて。
By performing vapor deposition treatment under the following conditions, M with an average layer thickness of 0.8 μm is applied to the polishing surface (outer peripheral surface) of the grindstone body.
Subsequently, a reaction layer of O or Nb is formed.

この反応層形成後の砥石本体を、反応混合がスを加熱し
、活性化する手段として、マイクロ波によるプラズマ放
電を利用する、特開昭58−110494号公報に記載
されるような人工ダイヤモンド析出生成装置に装入し、 反応容器:直径120uφを有する石英管。
After the reaction layer has been formed, the grindstone body is subjected to artificial diamond precipitation as described in Japanese Patent Application Laid-Open No. 110494/1983, which uses plasma discharge by microwaves as a means of heating and activating the reaction mixture. Charged into the generator: Reaction vessel: a quartz tube with a diameter of 120uφ.

反応混合ガス組成:容量割合で、CH4/ H2/ A
r−1/100−/10)。
Reaction mixture gas composition: CH4/H2/A in volume ratio
r-1/100-/10).

反応容器内の雰囲気圧力ニ 0.8 torr 。Atmospheric pressure inside the reaction vessel was 0.8 torr.

マイクロ波:2.45GHz。Microwave: 2.45GHz.

砥石本体の加熱温度ニア00℃。The heating temperature of the grinding wheel body is near 00℃.

反応処理時間:8時間。Reaction treatment time: 8 hours.

の条件で処理することによシ、上記砥石本体の研磨作用
面における上記MoまたはNbからなる反応層上に、平
均粒径:2μmの人工ダイヤモンドを、50%の分布面
積割合で析出生成させた。
By processing under the following conditions, artificial diamond with an average particle size of 2 μm was precipitated and formed at a distribution area ratio of 50% on the reaction layer made of Mo or Nb on the polishing surface of the grindstone body. .

つぎに、この結果得られた反応層がそれぞれM。Next, the resulting reaction layers are each M.

またはNbで形成された本発明ダイヤモンド研磨砥石、
さらにその表面に、通常のスパッタリング法を用い、 反応容器内真空度: 2 X 10−”torr 。
or a diamond polishing wheel of the present invention formed of Nb;
Further, a normal sputtering method was applied to the surface, and the vacuum inside the reaction vessel was set to 2 x 10-''torr.

雰囲気: Ar + Cuターrットヘノ印加電圧、−’100OV。Atmosphere: Ar+ The applied voltage to the Cu target was -'100OV.

砥石(4回転/分で回転)への印加電圧ニー I CI
 OV。
Applied voltage to the grinding wheel (rotating at 4 rotations/min) I CI
OV.

反応時間:30分。Reaction time: 30 minutes.

の条件で平均層厚=2μmのCuからなる金属表面層を
蒸着させた本発明表面被覆ダイヤモンド研磨砥石につい
て、Co: 12重量%、WC:残シからなる組成を有
し、かつプロファイル加工によシ半径:4.8IImの
凹みを形成しである超硬合金素材の前記凹みを仕上げ研
磨したところ120秒を要した。この所要時間はレジン
?ンドの同種の従来ダイヤモンド研磨砥石と同等のもの
であった。
Regarding the surface-coated diamond polishing wheel of the present invention, on which a metal surface layer made of Cu with an average layer thickness of 2 μm was deposited under the conditions of When a recess with a radius of 4.8 IIm was formed and the recess was finished polished in a cemented carbide material, it took 120 seconds. Is this the time required for resin? It was equivalent to the same type of conventional diamond polishing whetstone in India.

上述のように、この発明のダイヤモンド研磨砥石は、こ
れを構成するダイヤモンド粒が強固な密着力で結合し、
かつその粒度も、きわめて狭い範囲内に分布しているの
で、すぐれた研磨性能を著しく長期に亘って発揮し、さ
らにダイヤモンド粒を通常の人工ダイヤモンド析出生成
法によって形成することができるので、整粒の人工ダイ
ヤモンド粒が形成されることと含まって製造コストが安
いなど工業上有用な特性を有するのである。
As mentioned above, the diamond abrasive wheel of the present invention has diamond grains that are bonded together with strong adhesion,
Moreover, the particle size is distributed within an extremely narrow range, so it exhibits excellent polishing performance over a long period of time.Furthermore, diamond grains can be formed by the normal artificial diamond precipitation method, so it is possible to It has industrially useful properties such as the formation of artificial diamond grains and low manufacturing costs.

出願人 三菱金属株式会社 代理人 富 1) 和 夫 はか1名Applicant: Mitsubishi Metals Corporation Agent Tomi 1) Kazuo Haka 1 person

Claims (2)

【特許請求の範囲】[Claims] (1)研磨作用面がエツチング処理によシ腐食されて粗
面化した金属またはサーメットの基体と、前記基体の粗
面化した研磨作用面に被覆されたW 、 Mo 、およ
びNb、並びにその合金のうちのいずれかからなる反応
層と、 前記反応層における粗面凸部を中心として析出生成せし
めた人工ダイヤモンド粒と、 で構成されたことを特徴とする析出生成人工ダイヤモン
ド粒で構成されたダイヤモンド研磨砥石。
(1) A metal or cermet base whose polishing surface has been roughened by etching, W, Mo, and Nb coated on the roughened polishing surface of the base, and alloys thereof. A diamond composed of precipitated artificial diamond grains, characterized in that it is composed of: a reaction layer consisting of any one of the following; and artificial diamond grains precipitated around the rough surface convex portions of the reaction layer. Polishing whetstone.
(2)研磨作用面がエツチング処理により腐食されて粗
面化した金属またはサーメットの基体と、前記基体の粗
面化した研磨作用面に被覆されたW、Mo、およびNb
、並びにその合金のうちのいずれかからなる反応層と。 前記反応層における粗面凸部を中心として析出生成せし
めた人工ダイヤモンド粒と、 さらに、その表面に蒸着またはメッキによシ形成された
金属表面層と、 で構成されたことを特徴とする析出生成人工ダイヤモン
ド粒で構成されたダイヤモンド研磨砥石。
(2) A metal or cermet base whose polishing surface has been roughened by corrosion through etching, and W, Mo, and Nb coated on the roughened polishing surface of the base.
, and a reaction layer consisting of any of the alloys thereof. A precipitation formation characterized by comprising: artificial diamond particles formed by precipitation around the rough surface convex portions in the reaction layer; and a metal surface layer formed on the surface by vapor deposition or plating. A diamond polishing whetstone made of artificial diamond grains.
JP6034884A 1984-03-28 1984-03-28 Diamond grinding wheel composed of deposited artificial diamond particles Granted JPS60201877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6034884A JPS60201877A (en) 1984-03-28 1984-03-28 Diamond grinding wheel composed of deposited artificial diamond particles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6034884A JPS60201877A (en) 1984-03-28 1984-03-28 Diamond grinding wheel composed of deposited artificial diamond particles

Publications (2)

Publication Number Publication Date
JPS60201877A true JPS60201877A (en) 1985-10-12
JPH0474145B2 JPH0474145B2 (en) 1992-11-25

Family

ID=13139564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6034884A Granted JPS60201877A (en) 1984-03-28 1984-03-28 Diamond grinding wheel composed of deposited artificial diamond particles

Country Status (1)

Country Link
JP (1) JPS60201877A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60255366A (en) * 1984-05-29 1985-12-17 Sumitomo Electric Ind Ltd Preparation of diamond grinding paper
JPH03251370A (en) * 1990-03-01 1991-11-08 Mitsubishi Materials Corp Diamond grindstone for superfine grinding and manufacture thereof
JPH04141372A (en) * 1990-09-28 1992-05-14 Mitsubishi Materials Corp Diamond grinding wheel
JPH04348028A (en) * 1991-05-24 1992-12-03 Kyushu Electron Metal Co Ltd Inclined polishing method for semiconductor samples

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855562A (en) * 1981-09-28 1983-04-01 Hitachi Ltd Polishing dish and manufacture thereof
JPS58135117A (en) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater Diamond manufacturing method
JPS6086096A (en) * 1983-10-18 1985-05-15 Natl Inst For Res In Inorg Mater Membrane diamond precipitation method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855562A (en) * 1981-09-28 1983-04-01 Hitachi Ltd Polishing dish and manufacture thereof
JPS58135117A (en) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater Diamond manufacturing method
JPS6086096A (en) * 1983-10-18 1985-05-15 Natl Inst For Res In Inorg Mater Membrane diamond precipitation method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60255366A (en) * 1984-05-29 1985-12-17 Sumitomo Electric Ind Ltd Preparation of diamond grinding paper
JPH03251370A (en) * 1990-03-01 1991-11-08 Mitsubishi Materials Corp Diamond grindstone for superfine grinding and manufacture thereof
JPH04141372A (en) * 1990-09-28 1992-05-14 Mitsubishi Materials Corp Diamond grinding wheel
JPH04348028A (en) * 1991-05-24 1992-12-03 Kyushu Electron Metal Co Ltd Inclined polishing method for semiconductor samples

Also Published As

Publication number Publication date
JPH0474145B2 (en) 1992-11-25

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