JPS6020593A - Manufacture of compound semiconductor element - Google Patents
Manufacture of compound semiconductor elementInfo
- Publication number
- JPS6020593A JPS6020593A JP12767883A JP12767883A JPS6020593A JP S6020593 A JPS6020593 A JP S6020593A JP 12767883 A JP12767883 A JP 12767883A JP 12767883 A JP12767883 A JP 12767883A JP S6020593 A JPS6020593 A JP S6020593A
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- growth
- compound semiconductor
- manufacture
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は化合物半導体素子の製造方法に関する。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a method for manufacturing a compound semiconductor device.
埋込みへテロ構造の半導体素子、たとえば第１図、第２
図に示すＧａＡｔＡｓ系によびＩｎＧａＡｓＰ系のＢ
Ｉ−１（Ｂｕｒｉｅｄ−）１ｅｔｅｒＯｓｔｒｕｃｔｕ
ｒｅ ）型半導体レーザ素子の構造は、一般にメサ部上
端の高さよりその周囲の層の高さの方が相対的に商い構
造を有していた。例えば、Ｍ、 Ｈｉｒａｏ ｅｔａｌ
、、 Ｊ。Semiconductor elements with buried heterostructures, for example, FIGS. 1 and 2
B of the GaAtAs and InGaAsP systems shown in the figure.
I-1 (Buried-) 1eter Structure
The structure of the re ) type semiconductor laser device generally has a structure in which the height of the layer around the mesa portion is relatively higher than the height of the upper end of the mesa portion. For example, M. Hirao et al.
,,J.
Ａｐｐｌ、Ｐｈｙｓ、 ５１ 、４５３９．１９８０を
参照。ところが近年、結晶と゛成極の接触抵抗の低減な
どの理由により、第１図、第２図に示す構造を作製した
後に、ＧａＡｔＡｓ 系の場合のメサ最上Ｊｆ４ Ｇ
ａＡｔＡ ｓの衣面離化層のエツチングとＧａＡｓ１面
層の結晶成長を連続的に行な、う工程や、ＩｎＧａＡｓ
Ｐ系の場合のメサ直上の酸化マスク除去後の新たなＩｎ
ＧａＡｓＰ 表面層の形成工程を採用することにより、
より高信頼度の素子を指向するようになった。ところが
、第１図、第２図に示すようなメサ最上部の高さが周辺
部の高さより相対的に低い状態から出発する従来の素子
作製方法で得た表面層は第３図に示すごとく、液相エピ
タキシャル成長の基本原理上回避できないｇｒａｆｔ
なる結晶欠陥１７や溝状を呈するメサ上の成長に起因す
る凹状の未成長部となる欠陥１８が発生して、素子の作
製歩留り、信頼性の上で問題が生じていた。See Appl, Phys, 51, 4539.1980. However, in recent years, for reasons such as reducing the contact resistance between the crystal and the polarization, after fabricating the structure shown in Figs. 1 and 2, the top mesa Jf4 G
InGaAs
New In after removing the oxidation mask directly above the mesa in the case of P-based
By adopting the GaAsP surface layer formation process,
The trend is toward more highly reliable devices. However, the surface layer obtained by the conventional device fabrication method, which starts from a state where the height of the top of the mesa is relatively lower than the height of the surrounding area as shown in Figures 1 and 2, is as shown in Figure 3. , graft cannot be avoided due to the basic principle of liquid phase epitaxial growth.
Crystal defects 17 and defects 18 that are concave ungrown portions caused by growth on the groove-shaped mesa occur, causing problems in the manufacturing yield and reliability of devices.
本発明の目的は上記結晶欠陥がメサ上に発生しない作製
方法および素子構造をもって、高歩留り素子作製方法お
よび高信頼素子を提供することにある。An object of the present invention is to provide a high-yield device fabrication method and a highly reliable device using a fabrication method and device structure in which the above-mentioned crystal defects do not occur on the mesa.
上記結晶欠陥は、溝状を呈するメサ上の成長に起因する
ことから、メサ直上の成長層形成を伴なう成長を、メサ
表面の旨さがその周囲の結晶表面より相対的に高いか、
すくなくとも同等の形状をもって開始することで問題の
解決を図った。Since the crystal defects described above are caused by growth on mesas exhibiting a groove shape, growth accompanied by the formation of a growth layer directly above the mesa is determined by whether the quality of the mesa surface is relatively higher than that of the surrounding crystal surfaces.
The problem was solved by starting with at least an equivalent shape.
以下、本発明の一実施例を第４図により説明する。光通
信用光源として最適なＩｎＱａＡｓＰ 系の発振波長１
．３μｍ帯ＢＨ型半導体レーザ素子の作製に当シ、先ず
、ｎ〜ＩｎＰ基板結晶１９に通常の液相成長によシ２０
〜２３の４層を多層成長し、５ｉＱ２膜２８をマスクと
して設けて湿式化学エツチングにより、２０〜２３の層
より成るメサを形成した。しかる後、埋込み成長により
層２４〜２６を得た。但し、層２６の表面の高さは層２
３の表面の高さより相対的に低い状態で埋込み成長を完
了した。次に、酸化マスク２８を除去して、コンタクト
層２７を液相成長により得た。なお、該コンタクト層２
７はキャップ層２３よりバンド・ギャップ・エネルギー
Ｅｇが小さいＩｎＧａＡｓＰ組成であって、その後の素
子作製工程で設けるアノード電極との接触抵抗の低下が
可能な層であるが、該メサ形成に用いるエツチング液に
対する性質上、キャップ層２３の位置に設けることので
きないノーである。結晶成長後の素子作製工程は従来通
りのため省略する。An embodiment of the present invention will be described below with reference to FIG. Optimal oscillation wavelength of InQaAsP as a light source for optical communication1
．． To fabricate a 3 μm band BH type semiconductor laser device, first, an n-InP substrate crystal 19 is grown by normal liquid phase growth 20.
A mesa consisting of 20 to 23 layers was formed by growing 4 layers of 20 to 23 layers and performing wet chemical etching using the 5iQ2 film 28 as a mask. Thereafter, layers 24 to 26 were obtained by buried growth. However, the height of the surface of layer 26 is
The buried growth was completed in a state where the height was relatively lower than that of the surface of No. 3. Next, the oxide mask 28 was removed and a contact layer 27 was obtained by liquid phase growth. Note that the contact layer 2
7 is an InGaAsP composition having a smaller band gap energy Eg than the cap layer 23, and is a layer that can reduce the contact resistance with the anode electrode provided in the subsequent device fabrication process. Due to its nature, it cannot be provided at the position of the cap layer 23. The device fabrication process after crystal growth is the same as before and will be omitted.
本発明によれば、素子の注入電流−光出力特性、長期寿
命特性に悪影響を及ぼす結晶欠陥１７゜１８のうち、１
７は従来の１００チ発生から皆無に、１８は従来の２０
０〜１３００ケ／Ｃｒｎ２から皆無にすることができ、
素子の作製歩留り向上と高信頼度化に効果がある。According to the present invention, 1 out of 17°18 crystal defects that adversely affect the injection current-optical output characteristics and long-term life characteristics of the device
7 has been completely eliminated from the conventional 100-chi occurrence, and 18 has been reduced from the conventional 20-chi.
It can be completely eliminated from 0 to 1300 cases/Crn2,
This is effective in improving device manufacturing yield and increasing reliability.
第１図、第２図は従来のＢＨ型半導体レーザ素子の、レ
ーザ光出射方向からの断面図、第３図は第１図、第２図
の構造を有する結晶上にさらに成長層を設けた素子のレ
ーザ光出射方向からの断面図、第４図は本発明のＢＨ型
半導体レーザ素子のレーザ光出射方向からの断面図。Figures 1 and 2 are cross-sectional views of a conventional BH-type semiconductor laser device taken from the laser beam emission direction, and Figure 3 shows a crystal with the structure shown in Figures 1 and 2 further provided with a growth layer. FIG. 4 is a sectional view of the BH type semiconductor laser device of the present invention taken from the laser beam emission direction.
Claims (1)
子の結晶成長工程において、メサ直上への成長層形成を
伴なう成長を、メサ直上の結晶表面高さが周囲の結晶表
面高さより相対的に高いかあるいは同等の形状をもって
開始することを特徴とする化合物半導体素子の製造方法
。1. In the crystal growth process of a semiconductor device with a buried heterostructure having a series of trapezoidal mesas, the crystal surface height directly above the mesa is relative to the surrounding crystal surface height. 1. A method for manufacturing a compound semiconductor device, characterized in that the method starts with a shape that is higher than or equal to the shape of the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12767883A JPS6020593A (en) | 1983-07-15 | 1983-07-15 | Manufacture of compound semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12767883A JPS6020593A (en) | 1983-07-15 | 1983-07-15 | Manufacture of compound semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6020593A true JPS6020593A (en) | 1985-02-01 |
Family
ID=14965998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12767883A Pending JPS6020593A (en) | 1983-07-15 | 1983-07-15 | Manufacture of compound semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6020593A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5721751A (en) * | 1993-10-28 | 1998-02-24 | Nippon Telegraph & Telephone Corporation | Semiconductor laser |
-
1983
- 1983-07-15 JP JP12767883A patent/JPS6020593A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5721751A (en) * | 1993-10-28 | 1998-02-24 | Nippon Telegraph & Telephone Corporation | Semiconductor laser |
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