JPS60209248A - Photochemical reaction device - Google Patents
Photochemical reaction deviceInfo
- Publication number
- JPS60209248A JPS60209248A JP6341384A JP6341384A JPS60209248A JP S60209248 A JPS60209248 A JP S60209248A JP 6341384 A JP6341384 A JP 6341384A JP 6341384 A JP6341384 A JP 6341384A JP S60209248 A JPS60209248 A JP S60209248A
- Authority
- JP
- Japan
- Prior art keywords
- reaction vessel
- ultraviolet
- transmissive window
- gas supply
- transmission window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は光化学反応装置に関するものである。[Detailed description of the invention] The present invention relates to a photochemical reaction device.
最近、電子複写機の感光ドラムや太陽電池などに使用さ
れるアモルファスシリコンの蒸着膜の形成方法が研究さ
れている。また、他方では各種の絶縁膜や保饅膜の形成
にも蒸着方法が利用され、用途によりては種々の蒸着方
法が提案されているが、このなかでも光化学反応を利用
した光化学蒸着方法や光化学堆積方法は被膜形成速度が
著しく早く、大面積部にも均一な被膜を形成できるなど
の利点を有し、最近特に注目を集めてiる。Recently, research has been carried out on methods of forming vapor deposited amorphous silicon films used in photosensitive drums of electronic copying machines, solar cells, and the like. On the other hand, vapor deposition methods are also used to form various insulating films and protective films, and various vapor deposition methods have been proposed depending on the application. The deposition method has the advantage of being extremely fast in forming a film and being able to form a uniform film even over a large area, and has recently attracted particular attention.
従来の光化学反応を利用した化学蒸着もしくは堆積方法
は、紫外線をよく透過する窓を有する反応容器内に基板
を配置し、光反応用ガスを流すとともに、容器外から、
紫外線光源で当該ガスを光化学反応せしめ、その反応生
成物を基板に蒸着せしめるものであって、前記の大きな
利点を有するが、反面、反応生成物が容器の透過窓にも
蒸着してしまい、紫外線の透過を大きく阻害する欠点が
あることが分った。In conventional chemical vapor deposition or deposition methods that utilize photochemical reactions, a substrate is placed inside a reaction vessel that has a window that allows ultraviolet light to pass through.
This method photochemically reacts the gas with an ultraviolet light source and deposits the reaction product on the substrate, and has the above-mentioned great advantages, but on the other hand, the reaction product also deposits on the transparent window of the container, causing the ultraviolet rays to evaporate. It was found that there are drawbacks that greatly impede the permeation of
このため従来は、透過窓に油を塗布したり、アルゴンな
どの不活性ガスをフローさせたりして透過窓に蒸着もし
くは堆積することを抑えていた。For this reason, in the past, vapor deposition or deposition on the transmission window was suppressed by applying oil to the transmission window or flowing an inert gas such as argon.
しかし、油を塗布すると堆積した反応生成物を除去する
のが容易にはなるが堆積するのを防止する効果は小さく
、また、不活性ガス用のノズルを紫外線が遮断されない
ように配置して透過窓に一様に吹付けるのが困難であり
−、これらの対策では十分な効果を得ることができなか
った。However, although applying oil makes it easier to remove the accumulated reaction products, it is less effective in preventing the accumulation, and the inert gas nozzle is placed so that the ultraviolet rays are not blocked, allowing them to pass through. It is difficult to uniformly spray the windows, and these measures have not been effective enough.
そこで本発明は、簡単な構造であって、紫外線透過窓に
生成物が堆積せず、紫外線の透過が阻害されることのな
い光化学反応装置を提供することを目的とし、その構成
は、紫外線の透過窓を有する反応容器と、この反応容器
内に光反応性ガスを供給するガス給排機構と、反応容器
外より透過窓を通して被処理物である基板上を照射する
紫外線光源とを含む光化学反応装置であって、反応容器
内のガス給排機構と透過窓との間を紫外線透過性の多孔
板で仕切り、この多孔板と透過窓との空間に不活性ガス
供給孔を設けたことを特徴とするものである。Therefore, an object of the present invention is to provide a photochemical reaction device that has a simple structure and does not allow products to accumulate on the ultraviolet light transmitting window and prevent the transmission of ultraviolet light from being inhibited. A photochemical reaction that includes a reaction container having a transmission window, a gas supply/exhaust mechanism that supplies a photoreactive gas into the reaction container, and an ultraviolet light source that irradiates the substrate, which is the object to be processed, from outside the reaction container through the transmission window. The apparatus is characterized in that a gas supply/exhaust mechanism in a reaction vessel and a transmission window are partitioned by an ultraviolet-transparent perforated plate, and an inert gas supply hole is provided in the space between the perforated plate and the transmission window. That is.
以下に図面に示す実施例に基いて本発明を具体的に説明
する。The present invention will be specifically described below based on embodiments shown in the drawings.
反応容器1には光反応性ガスの導入孔11と、減圧装置
に接続される排気孔12が設けられ、内部中央には石英
ガラス製の基板支持台13が上下動可能に配設されてい
る。そして、上面は石英ガラスからなる紫外線の透過窓
14が設けられているが、その上部に灯体2が一体に連
設され、その天井部には反射部材21を介して紫外線光
源である紫外線う/プ5が複数個並設されている。ここ
で紫外線ランプ5は管径が18m、点灯開始電圧が55
0 V、点灯電圧が90Vで電流が5Aの交゛流点灯の
低圧水銀灯であるが、これに限られるものではなく、無
電極型のランプ装置やプラズマ発生装置でもよく、要は
所定量の紫外線を発生させるものであればよい。また必
要に応じて灯体2内の空間にガスをフローできる機構を
設けてもよい。The reaction vessel 1 is provided with a photoreactive gas introduction hole 11 and an exhaust hole 12 connected to a pressure reducing device, and a quartz glass substrate support 13 is arranged in the center of the interior so as to be movable up and down. . The top surface is provided with an ultraviolet light transmitting window 14 made of quartz glass, and a lamp body 2 is integrally connected to the top of the window 14, and an ultraviolet light source, which is an ultraviolet light source, is connected to the ceiling of the window 14 through a reflective member 21. A plurality of /pu 5 are arranged in parallel. Here, the ultraviolet lamp 5 has a tube diameter of 18 m and a lighting start voltage of 55 m.
The lamp is a low-pressure mercury lamp with an alternating current of 0 V, a lighting voltage of 90 V, and a current of 5 A. However, it is not limited to this, and may be an electrodeless lamp device or a plasma generator. It is sufficient as long as it generates. Further, a mechanism that allows gas to flow into the space within the lamp body 2 may be provided as necessary.
基板支持台15には図示路の温度調節器が取付けられて
おり、これに支持される基板4は外径が160s+のア
ルミナ板であって約150℃に加熱されている。なお、
この基板支持台15をターンチー、プル状に回転可能と
したり、反応容器1内を移動可能とし、運搬機構で基板
4を出し入れして多数の基@4を効率良く処理できるよ
うにすることができる。導入孔11からはキャリアガス
のアルゴン、光増感剤の水銀ガス、分解蒸着用ガスの四
水素化珪素からなる混合ガスが反応容器1内に供給され
るが、予め混合すると反応するような光反応性ガスを使
用するときは複数本の導入孔11を設けて各ガスを個別
に導入し、゛反応容器1内で混合するようKするのが良
い。そして、この導入孔11には温度調節器を設け、各
ガスを最適温度に調整して光化学反応を増進させるのが
良い。A temperature controller as shown in the diagram is attached to the substrate support stand 15, and the substrate 4 supported by this is an alumina plate having an outer diameter of 160s+ and is heated to about 150°C. In addition,
This substrate support stand 15 can be made rotatable in a turn-chip or pull-like manner, or can be made movable within the reaction vessel 1, so that a large number of substrates 4 can be efficiently processed by loading and unloading the substrates 4 with a transport mechanism. . A mixed gas consisting of argon as a carrier gas, mercury gas as a photosensitizer, and silicon tetrahydride as a decomposition vaporization gas is supplied from the introduction hole 11 into the reaction vessel 1. When using reactive gases, it is preferable to provide a plurality of introduction holes 11 to introduce each gas individually and to mix them within the reaction vessel 1. It is preferable that a temperature controller is provided in the introduction hole 11 to adjust each gas to an optimum temperature to promote the photochemical reaction.
次に、導入孔11や排気孔12より上方であって透過窓
14の近傍には多孔板5が配設されて透過窓14を覆っ
ており、これにより反応容器1内が仕切られている。こ
の多孔板5は紫外線を透過する石英ガラスからなり、直
径0.2閣の噴出孔51が1■ピツチで平面状に多数穿
設されている。Next, a perforated plate 5 is disposed above the introduction hole 11 and the exhaust hole 12 and near the transmission window 14 to cover the transmission window 14, thereby partitioning the inside of the reaction vessel 1. This perforated plate 5 is made of quartz glass that transmits ultraviolet rays, and is provided with a large number of ejection holes 51 having a diameter of 0.2 cm in a 1 inch pitch.
この多孔板5は、例えばMgF2 + CaF2 +L
tFなどの結晶板でもよく、噴出孔51もスリット状な
どでもよく、要は紫外線を透過する材料がらなり、その
表面からガスが一様に噴出できるものであればよい。そ
して、多孔板5の上方にはアルゴンなどの不活性ガス供
給孔1oが設けられ、これより透過窓14と多孔板5と
の空間内に不活性ガスが供給されて、噴出孔51よシ下
方に噴出するようKなってiる。This porous plate 5 is made of, for example, MgF2 + CaF2 +L
A crystal plate such as tF may be used, and the ejection holes 51 may be in the form of slits, as long as they are made of a material that transmits ultraviolet rays and can eject gas uniformly from its surface. Then, an inert gas supply hole 1o such as argon is provided above the perforated plate 5, and the inert gas is supplied from this into the space between the transmission window 14 and the perforated plate 5, and the inert gas is supplied from the nozzle hole 51 downward. It's getting so hot that it seems like it's going to erupt.
しかして上記装置において、反ろ容器1内が減圧されて
紫外線ランプ3が点灯される。もっとも反応容器1内を
減圧せずに常圧下で光化学反応を起させてもよい。そし
て、導入孔11より、5wHgのアルゴン、3−Hgの
四水素化珪素、3X10−5smHgの水銀蒸気が導入
され、同時に供給孔1oよリ100mHHのアルゴンが
供給されるが、紫外線は透過窓14と多孔板5を透過し
て基板4に照射され、これによって四水素化珪素が光分
解し、アモルファスの珪素が基板4上に蒸着もしくは堆
積される。このとき、光反応性ガスの一部分は上昇して
透過窓14の方向に進むが、その途中に配設された多孔
板5に於いて、第3図の矢印で示すように不活性ガスが
噴出孔51よシ噴出している。In the above apparatus, the pressure inside the container 1 is reduced and the ultraviolet lamp 3 is turned on. However, the photochemical reaction may be caused under normal pressure without reducing the pressure inside the reaction vessel 1. Then, 5wHg of argon, 3-Hg of silicon tetrahydride, and 3X10-5smHg of mercury vapor are introduced through the introduction hole 11, and at the same time, 100mHH of argon is supplied through the supply hole 1o, but ultraviolet rays are transmitted through the transmission window 10. The light passes through the porous plate 5 and is irradiated onto the substrate 4, whereby silicon tetrahydride is photodecomposed and amorphous silicon is vapor-deposited or deposited on the substrate 4. At this time, a portion of the photoreactive gas rises and moves toward the transmission window 14, but inert gas is ejected from the perforated plate 5 disposed in the middle as shown by the arrow in FIG. It is gushing out from hole 51.
従って、光反応性ガスが噴出孔51を通って透過窓14
に到達しないので透過窓14に反応生成物が堆積しない
。更に、噴出孔51よシ減圧された基@4側の空間に噴
出した不活性ガスは、噴出と同時に左右に拡散し、多孔
板5の下面にフローするので多孔板5にも反応生成物は
堆積しない。この様に透過窓14と多孔板50両者にア
モルファスシリコンが堆積しないので長時間操業しても
くもらず、紫外線の透過が阻害されない。Therefore, the photoreactive gas passes through the ejection hole 51 and passes through the transmission window 14.
Therefore, no reaction products are deposited on the transmission window 14. Furthermore, the inert gas ejected from the ejection hole 51 into the space on the side of the base @4 whose pressure has been reduced is diffused from side to side at the same time as the ejection, and flows to the lower surface of the perforated plate 5, so that no reaction products are present on the perforated plate 5 as well. Does not accumulate. In this way, since amorphous silicon is not deposited on both the transmission window 14 and the porous plate 50, there is no clouding even during long-time operation, and the transmission of ultraviolet rays is not inhibited.
以上説明したように、本発明は、反応容器内のガス給排
機構と透過窓との間に紫外線透過性の多孔板で仕切り、
この多孔板と透過窓との空間に不活性ガス供給孔を設け
、多孔板の噴出孔より不活性ガスが噴出するようKした
ので、ノズルなどで紫外線が遮断されることなく多孔板
の表面に不活性ガスが一様にフローし、生成物が堆積し
ない。As explained above, the present invention provides partitioning between the gas supply and exhaust mechanism in the reaction vessel and the transmission window with an ultraviolet-transparent perforated plate,
An inert gas supply hole was provided in the space between the perforated plate and the transparent window, and the inert gas was ejected from the ejection hole of the perforated plate, so that the ultraviolet rays were not blocked by the nozzle and were applied to the surface of the perforated plate. Inert gas flows uniformly and product does not accumulate.
従って、本発明によれば、簡単な構造でありて、紫外線
透過窓に生成物が堆積せず、紫外線の透過が阻害される
ことのない光化学反応装置を提供することができる。Therefore, according to the present invention, it is possible to provide a photochemical reaction device that has a simple structure, in which no products are deposited on the ultraviolet light transmission window, and in which the transmission of ultraviolet light is not inhibited.
第1図は本発明実施例の断面図、第2図は多孔板の斜視
図、第5図は不活性ガス噴出状況の説明図である。
1・・・反応容器 2・・・灯体 3・・・紫外線ラン
プ4・・・基板 5・・・多孔板
10・・・不活性ガス供給孔 11・・・導入孔12・
・・排気孔 13・・・基板支持台14・・・透過窓
51・・・噴出孔
出願人 ウシオ電機株式会社
代理人 弁理士 田原寅之助
第1図 、13
第3図
手続補正書(自発)
昭和59年8月10日
特許庁長官 志賀 学 殿
1、事件の表示
昭和59年 特許 1第63413号
2、発明の名称 光化学反応装置
3、補正をする者
事件との関係 特許出願人
代表者湯本大蔵
4、代理人
6、 補正により増加する発明の数 ナシ明細書第4頁
17行目の「空間にガスをフローできる機構を設けても
よい。」を「空間にガスをフローしたり、空間を減圧で
きる機構を設けてもよい。」 に補正する。
以上FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a perspective view of a perforated plate, and FIG. 5 is an explanatory diagram of an inert gas jetting situation. DESCRIPTION OF SYMBOLS 1... Reaction container 2... Lamp body 3... Ultraviolet lamp 4... Substrate 5... Porous plate 10... Inert gas supply hole 11... Introduction hole 12.
...Exhaust hole 13...Substrate support stand 14...Transmission window
51...Blowhole applicant Ushio Inc. agent Patent attorney Toranosuke Tahara Figure 1, 13 Figure 3 Procedural amendment (voluntary) August 10, 1980 Commissioner of the Japan Patent Office Manabu Shiga 1, Indication of the case 1980 Patent No. 1 No. 63413 2, Title of the invention: Photochemical reaction device 3, Relationship with the case of the person making the amendment: Patent applicant representative: Okura Yumoto 4, attorney: 6, Number of inventions increased by amendment: No specification No. On page 4, line 17, ``A mechanism that allows gas to flow into the space may be provided.'' is corrected to ``A mechanism that allows gas to flow into the space or to reduce the pressure of the space may be provided.''that's all
Claims (1)
光反応性ガスを供給するガス給排機構と、反応容器外よ
り透過窓を通して被処理物である基板上を照射する紫外
線光源とを含む光化学反応装置であって、反応容器内の
ガス給排機構と透過窓との間を紫外線透過性の多孔板で
仕切り、この多孔板と透過窓との空間に不活性ガス供給
孔を設けたことを特徴とする光化学反応装置。It includes a reaction vessel having an ultraviolet ray transmission window, a gas supply/exhaust mechanism that supplies a photoreactive gas into the reaction vessel, and an ultraviolet light source that irradiates the substrate, which is the object to be processed, from outside the reaction vessel through the transmission window. A photochemical reaction device in which a gas supply/exhaust mechanism in a reaction vessel and a transmission window are partitioned by an ultraviolet-transparent perforated plate, and an inert gas supply hole is provided in the space between the perforated plate and the transmission window. A photochemical reaction device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6341384A JPS60209248A (en) | 1984-04-02 | 1984-04-02 | Photochemical reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6341384A JPS60209248A (en) | 1984-04-02 | 1984-04-02 | Photochemical reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60209248A true JPS60209248A (en) | 1985-10-21 |
Family
ID=13228576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6341384A Pending JPS60209248A (en) | 1984-04-02 | 1984-04-02 | Photochemical reaction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60209248A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60181368U (en) * | 1984-05-09 | 1985-12-02 | 日本電子株式会社 | Optical CVD equipment |
| JPS61272384A (en) * | 1985-05-27 | 1986-12-02 | Semiconductor Energy Lab Co Ltd | Formation of thin film |
| JPS6326368A (en) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Cvd method |
| JPS6326369A (en) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Cvd method |
| JPS6328868A (en) * | 1986-07-22 | 1988-02-06 | Ulvac Corp | Cvd method |
| JPH05345979A (en) * | 1992-06-15 | 1993-12-27 | Chugai Ro Co Ltd | Film forming method in plasma film forming device |
| CN116031138A (en) * | 2023-01-10 | 2023-04-28 | 中国科学院大学 | A high-sensitivity online mass spectrometer and detection method for all species of gaseous pollutants |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5630058A (en) * | 1979-08-17 | 1981-03-26 | Kawasaki Steel Corp | Preventing method for leakage of molten steel through porus brick |
-
1984
- 1984-04-02 JP JP6341384A patent/JPS60209248A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5630058A (en) * | 1979-08-17 | 1981-03-26 | Kawasaki Steel Corp | Preventing method for leakage of molten steel through porus brick |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60181368U (en) * | 1984-05-09 | 1985-12-02 | 日本電子株式会社 | Optical CVD equipment |
| JPS61272384A (en) * | 1985-05-27 | 1986-12-02 | Semiconductor Energy Lab Co Ltd | Formation of thin film |
| JPS6326368A (en) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Cvd method |
| JPS6326369A (en) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Cvd method |
| JPS6328868A (en) * | 1986-07-22 | 1988-02-06 | Ulvac Corp | Cvd method |
| JPH05345979A (en) * | 1992-06-15 | 1993-12-27 | Chugai Ro Co Ltd | Film forming method in plasma film forming device |
| CN116031138A (en) * | 2023-01-10 | 2023-04-28 | 中国科学院大学 | A high-sensitivity online mass spectrometer and detection method for all species of gaseous pollutants |
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