JPS6020936Y2 - semiconductor equipment - Google Patents

Description

[Detailed Description of the Invention] This invention relates to a semiconductor device in which electrodes provided on a semiconductor substrate are improved.

2. Description of the Related Art In recent years, electronic devices have made remarkable progress, and devices are becoming smaller and lighter at a rapid pace.

These technological innovations are largely due to the miniaturization of semiconductor devices, and the driving force behind this is the development of manufacturing technology for semiconductor integrated circuit devices and hybrid integrated circuit devices.

Along with this, medium-capacity power semiconductor devices such as diodes and thyristors have multiple semiconductor chips interconnected inside the housing, and have one function or part of a function, such as a bridge rectifier circuit. Semiconductor packaging units made in this way are now available on the market.

FIG. 1 is a front view of a conventional semiconductor component unit as described above.

In the figure, 1 is a copper heat sink, 2 is a first ceramic substrate provided on the surface of the heat sink 1, 3 is a first bonding part 3a bonded to the first ceramic substrate 2, and a first adhesive part 3a of the heat sink 1. A first external conductor 4 is composed of a first extending portion 3b extending substantially perpendicularly to the ceramic substrate mounting surface 1a and in a direction away from the ceramic substrate mounting surface 1a;
A small first electrode with a side of 10 m was provided on the first adhesive part 3a of the external lead-out conductor 3 via the first anode molybdenum plate 5.
The thyristor chip 6 is a first cathode molybdenum plate provided on the first thyristor chip 4, and the first gate electrode 7 provided on the first thyristor chip 4 is located at the center of S. It has an opening (not shown) for taking out.

Reference numeral 8 denotes a rod-shaped first cathode connecting electrode that is brazed onto the surface of the first cathode molybdenum plate 6 so as to stand up.

Further, 12 is a first ceramic substrate 2 on the surface of the heat sink 1.
a second ceramic substrate 13 provided at a predetermined distance from the second ceramic substrate 13;
Continuously at a position farthest from the thyristor chip 5, the ceramic substrate mounting surface 1a of the heat sink 1 has an S
The second extending portion 13b extending in the direction away from the ceramic substrate mounting surface 1a and the ceramic portion of the heat sink 1 are continuously connected to the second extending portion 13b extending in the direction away from the ceramic substrate mounting surface 1a, and to the position closest to the first thyristor chip 5 of the second adhesive portion 13. The first connecting portion 13C of the substrate mounting surface 1a is perpendicular to S and extends in the direction away from the ceramic substrate mounting surface 1a, and the first connecting portion 13c is connected continuously to the first connecting portion 13c. a second external conductor formed of a second connecting portion 13d that is perpendicular to the surface of the conductor and is provided to reach the first cathode connecting electrode 8;
A hole 13e is provided at the tip of the second connection portion 13d of the second external conductor 13, and a rod-shaped first cathode connection electrode provided on the first thyristor chip 4 is inserted into the hole 13e. 8 is inserted, and in this state, the first cathode connection electrode 8 and the second external conductor 13 are brazed.

14 is a minute second thyristor chip with a side of 10 mm provided on the second adhesive part 13a of the second external conductor 13 via the second cathode molybdenum plate 15; 16 is a second thyristor chip;
The second cathode molybdenum plate is provided on the thyristor chip 14, and has a hole (not shown) in the center of the plate for taking out the second gate electrode 17 provided on the second thyristor chip 14. .

Reference numeral 18 designates a rod-shaped second cathode connecting electrode that is brazed to stand on the surface of the second cathode molybdenum plate 16.

19 is brazed to the second cathode connection electrode 18, and
A third external conductor is provided on the ceramic substrate mounting surface 1a of the heat dissipation plate 1 and extends in a direction perpendicular to S and away from the ceramic substrate mounting surface 1a. A hole 19 is provided at the connection part with the cathode connection electrode of No. 2.
a is provided, and after the second cathode connection electrode 18 is inserted into this hole 19a, it is brazed to the second cathode connection electrode 18.

20 is the first gate electrode 7 and the first cathode connection electrode 8
21 is a second gate wiring connected to the second gate electrode 17 and the second cathode connection electrode 18, respectively; 22 is a second gate wiring connected to the first gate electrode 17 and the second cathode connection electrode 18, respectively; There are four gate external conductors connected to the second gate wirings 20 and 21, respectively.

23 is attached on the ceramic substrate mounting surface 1a of the heat sink 1, and the above-mentioned 2, 4 to 8, 12.14 to 1B, 20.21
the first external lead-out conductor 3. Second external conductor 13. This is a cover that surrounds each of the third external lead-out conductor 19 and the gate external lead-out conductor 22 except for a portion thereof.

In such a conventional semiconductor component unit, the first and second cathode connecting electrodes 8, 18 have a rod-shaped configuration, and
．． The first thyristor chip provided on the second thyristor chip 4,14.
The second cathode molybdenum plate 6.16 is brazed so that it stands upright. Second cathode connection electrode 8
, 18, when some external force is applied to the first . Stress tends to concentrate on the second cathode molybdenum plates 6, 16, which has an undesirable effect on the first and second thyristor chips 4, 14.

Also, 1st. The second gate electrode 7.17 and the first. The second cathode connection electrodes 8 and 18 are connected to the minute first cathode connection electrodes 8 and 18. Since it is provided on the second thyristor chip 4, 14, the first thyristor chip. The second gate electrode 7.17 or the first. Second cathode connection electrode 8
゜18 and 1st. between the second gate wiring 20 and 21 and between the first cathode connection electrode 8 and the second external conductor 13;
Furthermore, a second cathode connection electrode 18 and a third external conductor 1
9 is difficult, and the workability of this connection work is extremely poor.

Furthermore, the first. The second cathode connection electrodes 8, 18 are connected to the first. Second
It is also connected to the gate wirings 20 and 21 of the first. Since a main current flows through the second cathode connection electrodes 8 and 18, noise caused by this main current is transmitted to the second gate wiring 2.
It has the disadvantage of being easily transferred to 0.2i.

This invention was made to eliminate the drawbacks of the conventional semiconductor unit described above, and includes a semiconductor substrate main electrode, a first conductor provided on the main electrode and extending from the main electrode, and a first conductor connected to the first conductor. , and an electrode made of a second conductor extending in a direction away from a support, the semiconductor device having no adverse effect on the semiconductor substrate even if an external force is applied to the electrode, and being easy to manufacture. It is something to do.

FIG. 2 is a front view showing a semiconductor component unit according to an embodiment of this invention, and FIG. 3 is a perspective view of a U-shaped cathode connection electrode used in the embodiment.

Note that the same reference numerals in the figure as in FIG. 1 indicate corresponding parts, and a description thereof will be omitted.

24 is a first U-shaped cathode connection electrode provided on the first thyristor chip 4 via the first cathode molybdenum plate 6, and is brazed on the first cathode molybdenum plate 6 to cover it. and a first conductor 24a extending in opposite directions from two oppositely located parts of the first thyristor chip 4, and a heat sink that is perpendicular to both ends of the first conductor 24a. It is composed of two second conductors 24b1 and 24b2 extending in a direction away from the second conductor 1.

A hole 24c for taking out the first gate electrode 7 provided on the first thyristor chip 4 is formed in the center of the first conductor 24a.

The second conductor 24b1 has a narrow tip portion, and the gate wiring 20 is brazed to this portion.
The conductor 24b2 is formed to have a narrow width at its tip, and this part is inserted into the hole 13e of the second external lead-out conductor 13. In this state, it is brazed to the second connection part 13d of the second external lead-out conductor 13. be done.

26 is a second U-shaped cathode connection electrode provided on the second thyristor chip 14 via the second cathode molybdenum plate 16, and is brazed onto the second cathode molybdenum plate 16 to cover it. and a first conductor 25a extending in opposite directions from two oppositely located portions of the second thyristor chip 14;
Two second conductors 25b, 25b2 that are perpendicular to both ends of a and extend in a direction away from the heat sink 1.
It consists of

A hole 25c is formed in the center of the first conductor 25a to take out the second gate electrode 17 provided in the second thyristor chip 14.

The second conductor 25b1 is formed to have a narrow width at its tip, and the gate wiring 21 is brazed to this portion, and the second conductor 25b2 is formed to have a narrow width at its tip, and this portion is It is inserted into the hole 19a of the external conductor 19, and in this state is brazed to the third external conductor 19.

In the semiconductor component unit which is an embodiment of the invention configured in this way, the first conductors 24a and 25a are
．． Since the second cathode is provided on the molybdenum plates 6 and 16 so as to cover this, even if the first cathode. Even if some external force is applied to the second U-shaped cathode connection electrodes 24, 25, this will not cause any adverse effects such as concentration of stress on the first and second thyristor chips 4, 14.

In addition, the first and second U-shaped cathode connection electrodes 24 and 26 are connected to each other. Second conductors 24b, 25b and second conductors 24b, 2 which are brazed to second gate wiring 20.21
5b, and 2nd. The second conductors 24b2 and 25ba, which are brazed to the third external conductor 13.19,
Since the thyristor chips 4 and 14 of the first thyristor chips 4 and 14 are formed apart from each other so as to protrude from the thyristor chips 4 and 14 to opposite sides, the thyristor chips 4 and 14 of the first Second gate wiring 21, 21. Second and third external lead-out conductors 13.
19th etc. wiring part. Second U-shaped cathode connection electrode 2
4,25° 1st. Brazing to electrode portions such as the second gate electrodes 7 and 17 becomes easy.

Furthermore, the second conductor 24b□ through which the gate trigger current flows
, 25b, and second conductors 24b2, 25 through which the main current flows.
b2 are formed separately from each other, so that noise caused by the main current will not be transferred to the first and second gate wirings 20 and 21.

FIG. 4 is a perspective view showing a U-shaped cathode connection electrode 26 used in another embodiment of the invention, and shows the first conductor 26a. A portion corresponding to the peripheral edge of the second cyrisk chip 4.14 and a portion corresponding to the periphery of the first conductor 26a. The projecting portion is separated from the heat sink 1 between the second thyristor chips 4, 14 and the first conductor 26a.
The structure includes a third conductor 26d that is perpendicular to a portion corresponding to the peripheral edge of the first and second thyristor chips 4 and 14.

If such a U-shaped cathode connection electrode 26 is used, the same effect as in the above embodiment can be obtained, and the first conductor 26a
1st. A portion corresponding to the peripheral edge of the second thyristor chip 4.14 and a portion corresponding to the periphery of the first conductor 26a. Since the third conductor 26d is provided between the second thyristor chip and the projecting portion, a high voltage is applied between the projecting portion of the U-shaped cathode connection electrode 26 and the heat sink 1. However, no discharge occurs during this period.

This invention is not limited to the above embodiments, but for example, the first embodiment. The first thyristor chip provided on the second thyristor chip 4,14. Even if two single-shaped cathode connection electrodes are provided on the second cathode molybdenum plate 6.16 so as to face each other, the same effect as in the above embodiment can be obtained.

As explained above, this idea is based on the main electrode of the semiconductor substrate.
Since the main electrode is provided with an electrode consisting of a first conductor extending from the main electrode and a second conductor connected to the first conductor and extending in a direction away from the support, the reliability of the semiconductor device is improved. It has the excellent effect of increasing the properties and making it easier to manufacture.

[Brief explanation of the drawing]

Figure 1 is a front view showing a conventional semiconductor component unit;
The figure is a front view showing a semiconductor component unit which is an embodiment of this invention, FIG. 3 is a perspective view showing a U-shaped cathode connection electrode used in the above-mentioned embodiment, and FIG. 4 is another embodiment of this invention. 1 is a perspective view of a U-shaped cathode connection electrode used in an exemplary semiconductor component; FIG. 1 is a heat sink, 4 and 14 are first. The second thyristor pellets, 24, 25, and 26 are the first thyristor pellets. A second U-shaped cathode connection electrode.

Claims (3)

[Scope of utility model registration request] (1) A support, a semiconductor substrate provided on the support and having a control electrode and a main electrode on one main surface, and a first conductor provided on the main electrode of the semiconductor substrate and connected to a first conductor extending from the main electrode. and an electrode made of a second conductor extending in a direction away from the support. (2) A request for registration of a utility model characterized in that the electrode has a U-shape in which first and second conductors are formed facing each other from edges located on opposite sides of the main electrode of the semiconductor substrate. The semiconductor device according to item 1. (3) Claims for registration of a utility model characterized in that the electrode is provided with a rising portion between a portion provided on the semiconductor substrate and a portion protruding from this portion to separate the protruding portion from the support body. The semiconductor device according to item 1.