JPS60236115A - Vertical magnetic recording medium - Google Patents
Vertical magnetic recording mediumInfo
- Publication number
- JPS60236115A JPS60236115A JP9123084A JP9123084A JPS60236115A JP S60236115 A JPS60236115 A JP S60236115A JP 9123084 A JP9123084 A JP 9123084A JP 9123084 A JP9123084 A JP 9123084A JP S60236115 A JPS60236115 A JP S60236115A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- magnetic recording
- recording medium
- lattice constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000035699 permeability Effects 0.000 claims abstract description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 3
- 239000010935 stainless steel Substances 0.000 claims abstract description 3
- 230000005415 magnetization Effects 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910019590 Cr-N Inorganic materials 0.000 abstract 1
- 229910019588 Cr—N Inorganic materials 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 239000013078 crystal Substances 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明は垂直磁気記録再生装置に使用される垂直磁気記
録媒体に関し、特に基体表面に形成される膜の改良に関
する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a perpendicular magnetic recording medium used in a perpendicular magnetic recording/reproducing device, and particularly to improvement of a film formed on a substrate surface.
従来、垂直磁気記録再生装置に使用される垂直磁気記録
媒体としては、ステンレス鋼等からなる基板上に垂直磁
化膜としてのＧｏ−Ｃｒ膜を形成した一層躾垂直磁気記
録媒体、あるいは第１図に示すように、基板１上に再生
・記録感度向上のためにＦｅ−Ｎ＋パーマロイなどの高
透磁率軟磁性膜２を形成し、さらにその上にｃｏ−ｃｒ
膜３を形成した二層膜垂直磁気記録媒体が用いられてい
る。上記Ｃｏ−Ｃｒ１１３は高周波スパッタリングある
いは真空蒸着法等の膜形成手段によって基板１上あるい
は高透磁率軟磁性ｌＩ２上に形成され、六方晶形の結晶
構造を有し、その結晶のＣ軸が膜面に対し垂直にそろっ
て成長しており、またそのＣ軸方向に強い異方性を持つ
ため垂直磁気異方１すが生じるものとなっている。Conventionally, perpendicular magnetic recording media used in perpendicular magnetic recording and reproducing devices are single-layer perpendicular magnetic recording media in which a Go-Cr film as a perpendicular magnetization film is formed on a substrate made of stainless steel or the like, or the type shown in FIG. As shown, a high magnetic permeability soft magnetic film 2 such as Fe-N+permalloy is formed on a substrate 1 to improve reproduction/recording sensitivity, and a co-cr
A double-layer perpendicular magnetic recording medium in which a film 3 is formed is used. The above Co-Cr113 is formed on the substrate 1 or the high permeability soft magnetic lI2 by film forming means such as high frequency sputtering or vacuum evaporation, and has a hexagonal crystal structure, with the C axis of the crystal aligned with the film surface. Since they grow vertically and have strong anisotropy in the C-axis direction, perpendicular magnetic anisotropy occurs.
しかるに上記ｃｏ−ｃｒ膜３は、その結晶のＣ軸のそろ
い方が基板１の条件によって異なる。特に前記二層膜垂
直磁気記録媒体の場合は高透磁率軟磁性膜２の面状態の
影響を受けてさらにそろい方が悪くなり、Ｃ軸が膜に対
し垂直な方向からずれた方向に分散して成長してしまい
、ひどいときには垂直磁気異方性すら消失してしまうこ
ともあつＩこ。However, in the co-cr film 3, the alignment of the C-axes of its crystals differs depending on the conditions of the substrate 1. In particular, in the case of the double-layer perpendicular magnetic recording medium, alignment becomes worse due to the influence of the surface condition of the high magnetic permeability soft magnetic film 2, and the C-axis is dispersed in a direction that deviates from the direction perpendicular to the film. In severe cases, even perpendicular magnetic anisotropy may disappear.
そこでこのような問題を解決するために、特開昭５８−
１４３１８号公報において示されているように、基板と
垂直磁化膜との間に５０〜１５００人の厚みの非磁性層
を形成した垂直磁気記録媒体が提案されている。すなわ
ち、アルマイト処理したアルミニウム基板やガラス板等
の基体上に非ｍ性層としてのＴｉ層を５０〜１５００人
の厚みて形成したのち垂直磁化膜を形成する。そうする
と、垂直磁化膜における基体に垂直方向の配向性を示す
分散角△θ５ｏがＴｉ層を設けない場合に比べて小さく
なる。たとえばＴ１層を形成しない場合には分散角Δθ
５ｏは９〜１３°となるのに対し、Ｔｉ層を５００人の
厚みで形成した場合には分散角へ〇５ｏは約６６となる
。したがって、垂直方向の配向性が向上し前述した問題
点が解決される。Therefore, in order to solve such problems,
As shown in Japanese Patent No. 14318, a perpendicular magnetic recording medium has been proposed in which a nonmagnetic layer with a thickness of 50 to 1,500 layers is formed between a substrate and a perpendicularly magnetized film. That is, a Ti layer as a non-molar layer is formed to a thickness of 50 to 1,500 layers on a substrate such as an alumite-treated aluminum substrate or a glass plate, and then a perpendicular magnetization film is formed. In this case, the dispersion angle Δθ5o indicating the orientation perpendicular to the substrate in the perpendicularly magnetized film becomes smaller than that in the case where no Ti layer is provided. For example, when the T1 layer is not formed, the dispersion angle Δθ
5o is 9 to 13 degrees, whereas when the Ti layer is formed to a thickness of 500 degrees, the dispersion angle 5o is approximately 66 degrees. Therefore, the vertical orientation is improved and the above-mentioned problems are solved.
ところでＴｉ層を設けるということは、垂直磁化膜にお
ける下地の結晶粒を小さくしたことを意味している。つ
まり下地の結晶粒を小さくするほど分散角Δθ５ｏを小
さくすることができる。したがって、Ｔ１層の代わりに
結晶粒のない非晶質層を下地として形成すれば、より大
きな効果を奏づる。またＷ、Ｒｈ、Ｍｕ 、Ｙ、Ｚｒ、
Ｐｔ、Ｃｒ。By the way, providing the Ti layer means that the underlying crystal grains in the perpendicularly magnetized film are made smaller. In other words, the smaller the underlying crystal grains are, the smaller the dispersion angle Δθ5o can be. Therefore, if an amorphous layer without crystal grains is formed as a base instead of the T1 layer, a greater effect can be achieved. Also W, Rh, Mu, Y, Zr,
Pt, Cr.
ｌｒなどの金属ならびにＳｉＯ２，ＴｉＯ２，Ｃｒ２Ｏ
３，Ｆｅ２Ｏ３，ｓｉｏなトノ酸化物等からなる層を下
地として形成しても同様どなる。Metals such as lr as well as SiO2, TiO2, Cr2O
Even if a layer made of 3, Fe2O3, sio, etc. is formed as a base, the same problem will occur.
いずれにしても特開昭５８−１４３１８号公報の骨子は
、下地の結晶粒を小さくすることにより垂直磁化膜にお
ける垂直方向の配向性を向上させるというものである。In any case, the gist of JP-A-58-14318 is to improve the vertical orientation of a perpendicularly magnetized film by reducing the size of the underlying crystal grains.
しかしながら現在では、さらに垂直方向の配向性の向上
が望まれている。また従来は、下地に垂直磁化膜を堆積
させていく初期の段階においては垂直異方性を持ちにく
く、垂直方向の配向性も非常に悪いものとなっていたた
め、この点の改善も望まれている。However, it is currently desired to further improve the vertical orientation. Furthermore, in the past, it was difficult to have perpendicular anisotropy in the initial stage of depositing a perpendicularly magnetized film on the base, and the orientation in the perpendicular direction was also very poor, so improvements in this point are desired. There is.
本発明の目的は、垂直磁化膜の基体に垂直な方向の配向
性をより向上させ得ると共に、上記垂直磁化膜成長初期
の段階から垂直方向の配向性がよい垂直磁気記録媒体を
提供することにある。An object of the present invention is to provide a perpendicular magnetic recording medium which can further improve the orientation of a perpendicularly magnetized film in the direction perpendicular to the substrate and which has good orientation in the perpendicular direction from the initial stage of growth of the perpendicularly magnetized film. be.
（ＩＮ要）
本発明は上記目的を達成するために次の如く構成したこ
とを特徴としている。すなわち、本発明は基体と垂直磁
化膜との間にＣｒどＮの化合物からなる膜を形成するよ
うにしたことを特徴としている。(IN required) In order to achieve the above object, the present invention is characterized by the following structure. That is, the present invention is characterized in that a film made of a compound of Cr or N is formed between the substrate and the perpendicularly magnetized film.
本発明では垂直磁化膜の格子定数に非常に近い格子定数
を有する躾を垂直磁化膜の下地に用いて、その下地の上
にエピタキシャル的に垂直磁化膜を形成するようにして
いる。こうすることにより、さらに垂直磁化膜の垂直方
向の配向性が向上し、また垂直磁化膜成長初期の段階か
ら垂直方向に配向性のよい膜が形成できる。In the present invention, a material having a lattice constant very close to that of the perpendicularly magnetized film is used as the base of the perpendicularly magnetized film, and the perpendicularly magnetized film is epitaxially formed on the base. By doing so, the perpendicular orientation of the perpendicularly magnetized film is further improved, and a film with good perpendicular orientation can be formed from the initial stage of growth of the perpendicularly magnetized film.
第２図は本発明の第１の実施例としての垂直磁気記録媒
体を示す断面図である。図中１１は基体としての５ＵＳ
４２０Ｊ２のＳＵＳ基板である。FIG. 2 is a sectional view showing a perpendicular magnetic recording medium as a first embodiment of the present invention. 11 in the figure is 5US as the base
It is a 420J2 SUS board.
１２は上記基板１１上にイオンブレーティング法５−
により１μｍ１ｊｊ度の厚みで形成されたＣｒＮＩｍで
ある。１３は上記ＣｒＮ膜１膜上２上周波スパッタリン
グにより１μｍの厚みで形成されたＣｏ−Ｃｒ膜である
。Reference numeral 12 denotes CrNIm formed on the substrate 11 with a thickness of 1 .mu.m by the ion blating method 5-. Reference numeral 13 denotes a Co--Cr film having a thickness of 1 μm formed on the CrN film 1 by high-frequency sputtering.
上記基板１１上にイオンブレーティング法によりＣｒＮ
膜１２を形成する場合は次の如く行なう。CrN was deposited on the substrate 11 by the ion blating method.
The film 12 is formed as follows.
まず、基板１１を３５０℃で加熱しながら真空槽内を１
０−’Ｔｏｒｒ台まで排気したのち、Ａｒガスを上記真
空層内に８Ｘ１０’Ｔｏｒｒ導入する。First, while heating the substrate 11 at 350°C, the inside of the vacuum chamber is
After evacuation to the 0-' Torr level, Ar gas is introduced into the vacuum layer at 8×10' Torr.
そして電極に４００Ｖ、Ｏ，，３Ａの電力を２分間供給
し、４８０Ｖ、０．５Ａの電力を５分間供給し、５２０
Ｖ、０．７Ａの電力を３分間供給することにより、イオ
ンボンバードを計１０分間行ない基板１１の表面洗浄を
行なう。その後、上記真空層内にＡｒガスを５Ｘ１０４
Ｔｏｒｒ、Ｎ２ ガスを９ｘ１０’Ｔｏｒｒ流入しなが
ら、ｃｒを蒸発させる。かくして基板１１上に約１μｍ
のＣｒＮ膜１２が形成されることになる。Then, power of 400V, O,,3A was supplied to the electrode for 2 minutes, power of 480V, 0.5A was supplied for 5 minutes,
By supplying power of V and 0.7 A for 3 minutes, ion bombardment is performed for a total of 10 minutes to clean the surface of the substrate 11. After that, Ar gas was introduced into the vacuum layer at 5×104
Cr is evaporated while flowing N2 gas at 9 x 10' Torr. Thus, about 1 μm on the substrate 11
CrN film 12 is formed.
また、ＣｒＮ膜１膜上２上周波スパッタリングによりＣ
ｏ−Ｃｒ膜１３を形成する場合は次の如６−
く行なう。まず、ＣｒＮ膜１２がその表面に形成された
基板１１を１５０℃で加熱しながらスパッタリング装置
の真空層内を１０−’Ｔｏｒｒ台まで排気したのち、基
板１１への加熱を止め、放冷しかつ水冷する。そしてバ
ックグラウンド圧力が２ＸＩＯ−’Ｔｏｒｒ以下となっ
たところで、Ａｒガスを５Ｘ１０’Ｔｏｒｒ導入し、３
００Ｗの電力でスパッタリングする。かくしてＣｒＮ膜
１膜上２上、５μｍの厚みでｃｏ−Ｃｒ膜１３が形成さ
れることになる。In addition, by high frequency sputtering on 1 CrN film 2
The o-Cr film 13 is formed as follows. First, while heating the substrate 11 on which the CrN film 12 is formed at 150° C., the vacuum layer of the sputtering device is evacuated to the 10-' Torr range, and then the heating of the substrate 11 is stopped and allowed to cool. Cool with water. Then, when the background pressure became 2XIO-'Torr or less, Ar gas was introduced at 5X10'Torr, and 3XIO-'Torr was introduced.
Sputtering is performed with a power of 00W. In this way, a co-Cr film 13 with a thickness of 5 μm is formed on the CrN film 1 and the film 2.
ところで、本実施例にて形成されたＣｒ１ｌＪ１１２の
ＣｕＫα−ＸＩｉｌ源によるＸ線回析は第３図に示すよ
うになる。同図から明らかなように、回折ピークは一本
しか現われず、その回折ピークから２θ−４４，０°、
格子定数２．０６人が読み取れる。なお２θはｘｍ源ど
カウンタとの角度である。Incidentally, the X-ray diffraction of Cr11J112 formed in this example using a CuKα-XIil source is as shown in FIG. As is clear from the figure, only one diffraction peak appears, and from that diffraction peak 2θ-44,0°,
Lattice constant: 2.06 people can read it. Note that 2θ is the angle with respect to the xm source counter.
一方、第４図は５０μｍの厚みのポリノイドフィルム上
に０．５μｍの厚みのＣｏ−Ｃｒ１を高周波スパッタリ
ングにより形成したものの、ＣＵＫα−Ｘ線源によるＸ
Ｌｍ回折の結果を示す図である。なおピーク値を明らか
にするために感度を代えることにより基準線をずらして
示している。上記ｃｏ−Ｃｒ膜は基本的に六方結晶形の
結晶構造を有しており、磁化容易軸と一致するＣ軸が膜
面に垂直であり、（００２＞面からの回折ピークは２θ
−４４，６°、格子定数２．０３人となる。On the other hand, Fig. 4 shows that Co-Cr1 with a thickness of 0.5 μm was formed on a polynoid film with a thickness of 50 μm by high-frequency sputtering.
It is a figure which shows the result of Lm diffraction. In addition, in order to clarify the peak value, the reference line is shown shifted by changing the sensitivity. The co-Cr film basically has a hexagonal crystal structure, and the C axis, which coincides with the easy axis of magnetization, is perpendicular to the film surface, and the diffraction peak from the (002> plane is 2θ
-44.6°, the lattice constant is 2.03 people.
このように前記ＣｒＮ膜の格子定数は２．０６人であり
、ｃｏ−Ｃｒ膜の格子定数２．０３人に対して非常に近
い値となっている。As described above, the lattice constant of the CrN film is 2.06 N, which is very close to the lattice constant of 2.03 N of the co-Cr film.
したがって本実施例によれば、ＣｒＮ膜のないｃｏ−Ｃ
ｒｌｌではロッキングカーブ半値幅からめた垂直方向の
配向性を表わす分散角へ〇５０は約５°であったが、第
２図のような構造の本実施例では分散角△θ５０は３°
以下となり、垂直方向の配向性をさらに向上させること
ができる。また垂直磁化膜が薄くても、その配向性は秀
れている。Therefore, according to this embodiment, co-C without a CrN film
In rll, the dispersion angle 〇50 representing the vertical orientation determined from the half-width of the rocking curve was about 5°, but in this example with the structure shown in Fig. 2, the dispersion angle △θ50 was 3°.
As a result, the vertical orientation can be further improved. Furthermore, even if the perpendicularly magnetized film is thin, its orientation is excellent.
第５図は本発明の第２の実施例としての垂直磁気記録媒
体を示す断面図である。本実施例においては、基板（Ｓ
ＵＳ４２０Ｊ ２基板）１１上にＣｏ＝Ｚｒ−Ｎｂから
なる高透磁率軟磁性膜１４を０．５μｍの厚みで形成し
たものを基体とし、その上に第１の実施例と同様な方法
でＣｒＮ膜１２を０．０２μｍの厚みで形成したものを
基体とし、さらにその上にＣｏ−Ｃｒ膜１３を０．２μ
ｍの厚みで形成したものとなっている。FIG. 5 is a sectional view showing a perpendicular magnetic recording medium as a second embodiment of the present invention. In this example, the substrate (S
US420J 2 substrate) A high permeability soft magnetic film 14 made of Co=Zr-Nb is formed on the substrate 11 to a thickness of 0.5 μm, and a CrN film is formed on it in the same manner as in the first embodiment. 12 with a thickness of 0.02 μm is used as a base, and a Co-Cr film 13 of 0.2 μm is further formed on it.
It is formed with a thickness of m.
こうづることにより、前記分散角Δθ５ｏはＣｒＮ膜１
２をＣｏ−Ｚｒ−Ｎｂからなる高透磁率軟磁性膜１４と
Ｃｏ−Ｃｒ膜１３との間に形成しない場合は約８°であ
ったのに対し、ＣｒＮ膜１２を高透磁率軟磁性膜１４と
Ｃｏ−Ｃｒ膜１３との間に形成した場合は６°となり、
配向性は若干ではあるが向上する。なお、一般的に高透
磁率軟磁性ｌ１１１４の上にＧｏ−Ｃｒ膜１３を形成し
た場合は上記Ｇｏ−Ｃｒｌｌｌ ３の配向性が悪く、第
６図に示すように（００２）面からの回折ピーク以外に
（１０１）面からの回折ピークも現われる。しかし本実
施例のようにＣｒＮｌ１１１２を高透磁率軟磁性膜１４
とＧｏ−Ｃｒ躾１３との間に形成すると、上記Ｃｏ−Ｃ
ｒ膜１３においては前記（１０９−
１）面からの回折ピークが減少し、（００２）面からの
回折ピークの強度が増加するという効果も奏する。By writing this, the dispersion angle Δθ5o is
2 was not formed between the high magnetic permeability soft magnetic film 14 made of Co-Zr-Nb and the Co-Cr film 13, the angle was about 8°, whereas 14 and the Co-Cr film 13, it is 6°,
The orientation improves, albeit slightly. Generally, when the Go-Cr film 13 is formed on the high magnetic permeability soft magnetic l1114, the orientation of the Go-Crll 3 is poor, and as shown in FIG. 6, the diffraction peak from the (002) plane In addition, a diffraction peak from the (101) plane also appears. However, as in this embodiment, CrNl1112 is used as the high permeability soft magnetic film 14.
and the Go-Cr layer 13, the above Co-C
In the r film 13, the diffraction peak from the (109-1) plane is reduced and the intensity of the diffraction peak from the (002) plane is increased.
なお本発明は上記各実施例に限定されるものではない。Note that the present invention is not limited to the above embodiments.
たとえば上記実施例におけるＣｒＮ膜１２は、ＣｒとＮ
との比が１：１のものに限らず、化学的−論比をずらし
たＯｒとＮとの化合物を用いても、その上に形成する垂
直磁化膜の格子定数に非常に近い格子定数を有するもの
ならば、同様な効果を奏する。また上記実施例ではイオ
ンブレーティング法によりＣｏＮ膜１２の膜形成を行な
ったが、これ以外の手段を用いてもよい。また上記実施
例では基板１１としてＳＵＳ基板を用いたが、たとえば
ポリアミド樹脂等からなる基体を用いてもよい。このほ
か本発明の要旨を越えない範囲で種々変形実施可能であ
る。For example, the CrN film 12 in the above embodiment contains Cr and N.
Even if a compound of Or and N with a different chemical ratio is used, it is possible to obtain a lattice constant that is very close to the lattice constant of the perpendicularly magnetized film formed thereon. If you have one, the same effect will be achieved. Further, in the above embodiment, the CoN film 12 was formed by the ion blating method, but other methods may be used. Further, in the above embodiment, a SUS substrate was used as the substrate 11, but a substrate made of, for example, polyamide resin may also be used. In addition, various modifications can be made without departing from the gist of the present invention.
本発明によれば、基体と垂直磁化膜との間にＣｒとＮの
化合物からなる層を形成するようにしたので、垂直磁化
膜における基体に垂直な方向の配１０−
向性をより向上させ得ると共に、上記垂直磁化膜成長初
期の段階から垂直方向の配向性がよい垂直磁気記録媒体
を提供できる。According to the present invention, since a layer made of a compound of Cr and N is formed between the substrate and the perpendicularly magnetized film, the orientation of the perpendicularly magnetized film in the direction perpendicular to the substrate is further improved. At the same time, it is possible to provide a perpendicular magnetic recording medium that has good orientation in the perpendicular direction from the initial stage of growth of the perpendicularly magnetized film.
第１図は従来の垂直磁気記録媒体を示す断面図、第２図
は本発明の第１の実施例としての垂直磁気記録媒体を示
す断面図、第３図および第４図は同実施例の作用を説明
するための図、第５図は本発明の第２の実施例としての
垂直磁気記録媒体を示す断面図、第６図は同実施例の作
用を説明するための図である。
１１＝−１１板、１２−Ｃｒ Ｎ膜、１３−Ｃｏ −Ｃ
ｒ膜、１４・・・高透磁率軟磁性膜。
出願人代理人 弁理士 坪井 淳
一１１＝
第１図
第２図
第５図
手続補正書
昭、１６ρ−８、ｙｒ２Ｄ
特許庁長官 宇 賀 道 部 殿
１、事件の表示
特願昭５９−９１２３０号
２、発明の名称
垂直磁気記録媒体
３、補正をする渚
事件との関係 時抑阪斥曳ん
名称（０３７）オリンパス光学下）株式会？１４、代理
人
５、自発補正
７、補正の内容
明細書第１０頁第１１行のｒＣｏＮ膜」をｒＣｒＮ膜」
と訂正する。FIG. 1 is a sectional view showing a conventional perpendicular magnetic recording medium, FIG. 2 is a sectional view showing a perpendicular magnetic recording medium as a first embodiment of the present invention, and FIGS. FIG. 5 is a sectional view showing a perpendicular magnetic recording medium as a second embodiment of the present invention, and FIG. 6 is a diagram for explaining the action of the second embodiment. 11=-11 plate, 12-Cr N film, 13-Co -C
r film, 14... High permeability soft magnetic film. Applicant's representative Patent attorney Junichi Tsuboi 11 = Fig. 1 Fig. 2 Fig. 5 Procedural amendment Sho, 16ρ-8, yr2D Commissioner of the Patent Office Michibe Uga 1, Indication of case Patent application No. 1988-91230 2 , Name of the invention Perpendicular magnetic recording medium 3, Corrected relationship with the Nagisa incident Name (037) under Olympus Optical) Co., Ltd.? 14. Agent 5, Voluntary Amendment 7, Change the "rCoN film" in page 10, line 11 of the statement of contents of the amendment to "rCrN film"
I am corrected.
Claims (2)
化容易軸を有する垂直磁化膜を設けた垂直磁気記録媒体
において、前記基体と前記垂直磁化膜との間にＣｒとＮ
の化合物からなる膜を形成したことを特徴とする垂直磁
気記録媒体。(1) In a perpendicular magnetic recording medium in which a perpendicular magnetization film having an easy magnetization axis in a direction perpendicular to the surface of the substrate is provided on a substrate, Cr and N are disposed between the substrate and the perpendicular magnetization film.
A perpendicular magnetic recording medium characterized by forming a film made of a compound of.
に高透磁率軟磁性膜を設けたものであることを特徴とす
る特許請求の範囲第（１）項記載の垂直磁気記録媒体。(2) The perpendicular magnetic recording medium according to claim (1), wherein the substrate is a substrate made of stainless steel or the like with a high permeability soft magnetic film provided on the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9123084A JPS60236115A (en) | 1984-05-08 | 1984-05-08 | Vertical magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9123084A JPS60236115A (en) | 1984-05-08 | 1984-05-08 | Vertical magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60236115A true JPS60236115A (en) | 1985-11-22 |
| JPH0544728B2 JPH0544728B2 (en) | 1993-07-07 |
Family
ID=14020619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9123084A Granted JPS60236115A (en) | 1984-05-08 | 1984-05-08 | Vertical magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60236115A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996027187A1 (en) * | 1995-02-27 | 1996-09-06 | Hitachi, Ltd. | Magnetic recording medium and magnetic storage device |
| US7736767B2 (en) | 2007-03-02 | 2010-06-15 | Hitachi Global Storage Technologies Netherlands, B.V. | Perpendicular magnetic recording medium having an interlayer formed from a NiWCr alloy |
-
1984
- 1984-05-08 JP JP9123084A patent/JPS60236115A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996027187A1 (en) * | 1995-02-27 | 1996-09-06 | Hitachi, Ltd. | Magnetic recording medium and magnetic storage device |
| US7736767B2 (en) | 2007-03-02 | 2010-06-15 | Hitachi Global Storage Technologies Netherlands, B.V. | Perpendicular magnetic recording medium having an interlayer formed from a NiWCr alloy |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0544728B2 (en) | 1993-07-07 |
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