JPS60237634A - Magnetic recording medium and its production - Google Patents

Magnetic recording medium and its production

Info

Publication number
JPS60237634A
JPS60237634A JP9396984A JP9396984A JPS60237634A JP S60237634 A JPS60237634 A JP S60237634A JP 9396984 A JP9396984 A JP 9396984A JP 9396984 A JP9396984 A JP 9396984A JP S60237634 A JPS60237634 A JP S60237634A
Authority
JP
Japan
Prior art keywords
magnetic
silicon
plasma
atoms
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9396984A
Other languages
Japanese (ja)
Inventor
Takashi Kubota
隆 久保田
Tsunemi Oiwa
大岩 恒美
Fumio Komi
文夫 小海
Kunio Wakai
若居 邦夫
Hiroshi Yamamoto
博司 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maxell Ltd
Original Assignee
Hitachi Maxell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Maxell Ltd filed Critical Hitachi Maxell Ltd
Priority to JP9396984A priority Critical patent/JPS60237634A/en
Publication of JPS60237634A publication Critical patent/JPS60237634A/en
Pending legal-status Critical Current

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  • Paints Or Removers (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To obtain a magnetic recording medium having excellent corrosion resistance, etc. by providing a protective layer having a specific atomic ratio of Si:O by plasma polymn. of a gaseous mixture composed of a gaseous silicon monomer contg. Si, C and H or further N and contg. gaseous O2 on a magnetic layer formed on a substrate. CONSTITUTION:The magnetic layer 10 is formed on the substrate 1 consisting of a polyester film, etc. by using a magnetic paint contg. gamma-Fe2O3 powder, Co-contg. gamma-Fe2O3 powder, Fe-Ni powder, etc. or said layer 10 is formed on the substrate by a vapor deposition method, etc. on a magnetic metal (including an alloy). The gaseous mixture which is composed of the gaseous silicon monomer contg. Si, C and H or further N, such as Si(CH3)4 or hexamethyl disilasane and 5-10vol%, by the volume of said gaseous monomer, a carrier gas such as Ar and is incorporated therein with an extremely slight amt. of gaseous O2 is introduced into a plasma polymerizing device 2 and the plasma-polymerized film 11 consisting of the O-contg. silicon org. compd. having <=0.5 atomic ratio of O:Si is formed as the protective layer on the above-mentioned magnetic layer 10 on the substrate film 1 moving along the peripheral side surface of a cylindrical can 4. The magnetic recording medium A having excellent corrosion resistance and durability is thus obtd.

Description

【発明の詳細な説明】 〔技術分野および目的〕 この発明は磁気記録媒体に関し、−その目的とするとこ
ろは、耐久性および耐食性に優れた磁気記録媒体を提供
することにある。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field and Object] The present invention relates to a magnetic recording medium, and an object thereof is to provide a magnetic recording medium with excellent durability and corrosion resistance.

〔背景技術〕[Background technology]

一般に、磁性粉末を結合剤成分とともに基体フィルム上
に結着させるか、或いは強磁性金属またはそれらの合金
などを真空蒸着等によって基体フィルム上に被着してつ
くられる磁気記録媒体は、記録再生時に磁気ヘッド等と
激しく摺接するため磁性層が摩耗され易く、特に真空蒸
着等によって形成される強磁性金属薄膜型磁気記録媒体
は、高密度記録特性に優れる反面、磁気ヘッドとの摩擦
係数が大きくて摩耗や損傷を受け易く、また空気中で除
々に酸化を受けて最大磁束密度などの磁気特性が劣化す
るなどの難点がある。
In general, magnetic recording media are made by binding magnetic powder together with a binder component onto a base film, or by depositing ferromagnetic metals or their alloys on a base film by vacuum deposition, etc. The magnetic layer is easily worn out due to violent sliding contact with the magnetic head, etc. In particular, ferromagnetic metal thin film magnetic recording media formed by vacuum deposition etc. have excellent high-density recording characteristics, but have a large coefficient of friction with the magnetic head. It is susceptible to wear and damage, and it also suffers from gradual oxidation in the air, resulting in deterioration of magnetic properties such as maximum magnetic flux density.

このため、磁性層上に種々の保護膜層を設けて耐久性お
よび耐食性を改善することが行われており、近年、たと
えば、オククメチルシクロテトラシロキサンのモノマー
ガスをプラズマ重合してケイ素系有機化合物のプラズマ
重合保護膜層を磁性層上に形成すること〔飯島哲生、花
房廣明、電子通信学会論文誌、J67−C,、Nol 
(’ 84)〕が提案されている。ところが、この種の
オクタメチルシクロテトラシロキサンのモノマーガスを
用いてプラズマ重合を行うと、その酸素含有量が多いた
め、気相中で反応してモノマーガスが粉末化したり、ま
たオクタメチルシクロテトラシロキサンが分解してSi
O被膜ができるなどして、充分に緻密で強靭なケイ素系
有機化合物のプラズマ重合保護膜層が得られず、未だ充
分に耐久性および耐食性を改善することができない。
For this reason, various protective film layers have been provided on the magnetic layer to improve durability and corrosion resistance. Forming a plasma-polymerized protective film layer on the magnetic layer [Tetsuo Iijima, Hiroaki Hanabusa, Journal of the Institute of Electronics and Communication Engineers, J67-C, No.
('84)] has been proposed. However, when plasma polymerization is performed using this type of octamethylcyclotetrasiloxane monomer gas, because of its high oxygen content, the monomer gas may react in the gas phase and turn into powder, or octamethylcyclotetrasiloxane decomposes into Si
Due to the formation of an O film, it is not possible to obtain a sufficiently dense and tough plasma-polymerized protective film layer of a silicon-based organic compound, and it is still not possible to sufficiently improve durability and corrosion resistance.

〔発明の概要〕[Summary of the invention]

この発明はかかる現状に鑑み鋭意研究を重ねた結果、磁
性層を、ケイ素原子、炭素原子および水素原子もしくは
これらと窒素原子からなるケイ素系有m化合物のモノマ
ーガスと、この七ツマーガスに対する容積比が5〜10
容量%の酸素ガスとの混合ガスのプラズマ中にさらして
プラズマ重合を行い、ケイ素原子に対して原子数比で0
.5倍以下の酸素原子を含むケイ素系有機化合物のプラ
ズマ重合保護膜層を磁性層上に形成すると、充分に緻密
で強靭なケイ素系有機化合物のプラズマ重合保護膜層が
形成され、耐摩耗性が大きく改善されて耐久性が向上さ
れるとともに耐食性も充分に改善されることがわかりな
されたものである。
The present invention was developed as a result of extensive research in view of the current situation, and it was discovered that the magnetic layer is made of silicon atoms, carbon atoms, hydrogen atoms, or a monomer gas of a silicon-based compound consisting of silicon atoms, carbon atoms, and hydrogen atoms, and a monomer gas of a silicon-based compound composed of these atoms and nitrogen atoms, and a volume ratio of the monomer gas to this 7-mer gas. 5-10
Plasma polymerization is performed by exposing to plasma of a mixed gas with vol% oxygen gas, and the atomic ratio to silicon atoms is 0.
.. When a plasma-polymerized protective film layer of a silicon-based organic compound containing 5 times or less of oxygen atoms is formed on a magnetic layer, a sufficiently dense and tough plasma-polymerized protective film layer of a silicon-based organic compound is formed, resulting in improved wear resistance. It has been found that the durability is greatly improved and the corrosion resistance is also sufficiently improved.

この発明において、磁性層上にプラズマ重合保護膜層を
被着形成する随行われるプラズマ重合は、ケイ素原子、
炭素原子および水素原子もしくはこれらと窒素原子から
なるケイ素系有機化合物のモノマーガスに、このモノマ
ーガスに対する容積比が5〜10容量%のごく微量の酸
素ガスをキャリアガスとして混合し、この混合ガスを、
高周波によりプラズマ重合させることによって行われ、
キャリアガスとしてごく微量の酸素ガスを併用している
ため、オクタメチルシクロテトラシロキサンのモノマー
ガスを用いてプラズマ重合を行う場合のように、この種
のモノマーガス中に含有する多量の酸素によりモノマー
ガスが気相中で反応して粉末化したり、SiO被膜がで
きたりすることもなく、ケイ素原子に対して原子数比で
0.5倍以下の微量の酸素原子を含む緻密で強靭なケイ
素系有機化合物のプラズマ重合保護膜層が形成され、耐
久性および耐食性が充分に向上される。また、プラズマ
重合保護膜層に含有される微量の酸素原子により磁性層
との接着性が向上され、耐久性がさらに一段と向上され
る。
In this invention, the plasma polymerization that is performed along with the formation of a plasma polymerized protective film layer on the magnetic layer is performed by silicon atoms,
A very small amount of oxygen gas having a volume ratio of 5 to 10% by volume to this monomer gas is mixed as a carrier gas with a monomer gas of a silicon-based organic compound consisting of carbon atoms and hydrogen atoms, or these and nitrogen atoms, and this mixed gas is ,
It is carried out by plasma polymerization using high frequency,
Since a very small amount of oxygen gas is also used as a carrier gas, as in the case of plasma polymerization using monomer gas of octamethylcyclotetrasiloxane, the monomer gas is It is a dense and tough silicon-based organic material that does not react in the gas phase and turn into powder or form a SiO film, and contains a trace amount of oxygen atoms with an atomic ratio of less than 0.5 times that of silicon atoms. A plasma polymerized protective film layer of the compound is formed, and the durability and corrosion resistance are sufficiently improved. Moreover, the small amount of oxygen atoms contained in the plasma polymerized protective film layer improves the adhesion with the magnetic layer, further improving the durability.

このような、ケイ素系有機化合物のプラズマ重合保護膜
層を形成するのに使用するケイ素系有機化合物のモノマ
ーガスとしては、たとえば、テトラメチルシラン、ヘキ
サメチルジシラザン、ビニルトリメチルシラン、トリメ
チルシリルアセチレン等のケイ素系有機化合物の七ツマ
ーガスが好ましく使用され、これらのケイ素系有機化合
物のモノマーガスは、高周波によりラジカルが生成され
、この生成されたラジカルが反応し重合して被膜となる
Examples of silicon-based organic compound monomer gas used to form such a silicon-based organic compound plasma polymerized protective film layer include tetramethylsilane, hexamethyldisilazane, vinyltrimethylsilane, trimethylsilylacetylene, etc. Monomer gases of silicon-based organic compounds are preferably used. Radicals are generated from these monomer gases of silicon-based organic compounds by high frequency waves, and the generated radicals react and polymerize to form a film.

また、これらのケイ素系有機化合物のモノマーガスをプ
ラズマ重合する際、キャリアガスとして混合して使用す
る酸素ガスは、これらのケイ素系有機化合物のモノマー
ガスに対して、容積比で5〜lO容量%の範囲内で混合
して使用するのが好ましく、酸素ガスの使用量が少なす
ぎては磁性層に対する接着性が充分に改善されず、多す
ぎると気相中でケイ素系有機化合物のモノマーガスが反
応して粉末化したり、ケイ素系有機化合物が分解してS
iO被膜が形成され、緻密で強靭なケイ素系有機化合物
のプラズマ重合保護膜層が得られない。このように酸素
ガスをケイ素系有機化合物のモノマーガスに対して、容
積比で5〜10容量%の範囲内で混合し、これを用いて
プラズマ重合を行うと、ケイ素原子に対して原子数比で
0.5倍以下の微量の酸素原子を含む緻密で強靭なケイ
素系有機化合物のプラズマ重合保護膜層が形成され、こ
のプラズマ重合保護膜層中に含まれる微量の酸素原子に
よって磁性層との接着性も向上されて、耐摩耗性および
耐食性が一段と向上される。
In addition, when plasma polymerizing the monomer gas of these silicon-based organic compounds, the oxygen gas mixed and used as a carrier gas has a volume ratio of 5 to 10% by volume relative to the monomer gas of these silicon-based organic compounds. It is preferable to use the mixture within the range of . If the amount of oxygen gas used is too small, the adhesion to the magnetic layer will not be sufficiently improved, and if it is too large, the monomer gas of the silicon-based organic compound will be released in the gas phase. It may react and turn into powder, or silicon-based organic compounds may decompose and produce S.
An iO film is formed, and a dense and tough plasma polymerized protective film layer of a silicon-based organic compound cannot be obtained. In this way, when oxygen gas is mixed in a volume ratio of 5 to 10% with respect to the monomer gas of a silicon-based organic compound, and plasma polymerization is performed using this, the atomic ratio with respect to silicon atoms is A plasma-polymerized protective film layer of a dense and tough silicon-based organic compound containing a trace amount of oxygen atoms of 0.5 times or less is formed. Adhesion is also improved, and wear resistance and corrosion resistance are further improved.

プラズマ重合を行う場合の、前記ケイ素系有機化合物の
七ツマーガスと酸素ガスとの混合ガスのガス圧および高
周波の出力は、ガス圧が高くなるほど被着速度が速くな
る反面上ツマーガスが比較的低分子量でプラズマ重合さ
れて硬い保護膜層が得られず、ガス圧を低くして高周波
出力を高くすると被着速度が遅くなる反面高分子化され
た比較的硬い保護膜層が得られるが、ガス圧を低くして
高周波出力を高くしすぎると、モノマーガスが粉末化し
てしまいプラズマ重合保護膜層が形成されないため、ガ
ス圧を0.005〜0.30 トールの範囲内とし、高
周波出力を0.1〜2.0 W/−の範囲内とするのが
好ましく、ガス圧を0.O1〜0.1トールとし、高周
波出力を0.3〜1.0 W/−の範囲内とするのがよ
り好ましい。
When performing plasma polymerization, the gas pressure and high frequency output of the mixed gas of the silicon-based organic compound 7-mer gas and oxygen gas are such that the higher the gas pressure, the faster the deposition speed, but on the other hand, the higher the gas pressure, the higher the deposition rate. However, if the gas pressure is lowered and the high frequency output is increased, the deposition speed will be slower, but a relatively hard protective film layer made of polymer will be obtained. If the high frequency output is made too high with a low value, the monomer gas will turn into powder and a plasma polymerized protective film layer will not be formed. It is preferably within the range of 1 to 2.0 W/-, and the gas pressure is 0. It is more preferable that O1 to 0.1 Torr and the high frequency output be within the range of 0.3 to 1.0 W/-.

このような、プラズマ重合によって被着形成されるケイ
素系有機化合物のプラズマ重合保護膜層の膜厚は、20
〜1000人の範囲内であることが好ましく、膜厚が薄
すぎるとこの保護膜層による耐久性および耐食性の効果
が充分に発揮されず、厚すぎるとスペーシングロスが大
きくなりすぎて電磁変換特性に悪影響を及ぼす。
The film thickness of such a plasma polymerized protective film layer of a silicon-based organic compound deposited by plasma polymerization is 20
It is preferable that the thickness is within the range of ~1,000 people. If the film thickness is too thin, the durability and corrosion resistance effects of this protective film layer will not be fully exhibited, and if it is too thick, the spacing loss will be too large and the electromagnetic conversion characteristics will be affected. have a negative impact on

基体上に形成される磁性層は、γ−Fe203粉末、F
e3O4粉末、CO含有r−Fe203粉末、Co含有
Fe3O4粉末、Fe粉末、C。
The magnetic layer formed on the substrate is made of γ-Fe203 powder, F
e3O4 powder, CO-containing r-Fe203 powder, Co-containing Fe3O4 powder, Fe powder, C.

粉末、Fe−Ni粉末などの磁性粉末を結合剤成分およ
び有機溶剤等とともに基体上に塗布、乾燥するか、或い
は、C0% Nis Fe、Go−Ni、Co−CrX
Co−P、Co−N1−Pなどの強磁性材を真空蒸着、
イオンブレーティング、スパツタリング、メッキ等の手
段によって基体上に被着するなどの方法で形成される。
Magnetic powder such as Fe-Ni powder or Fe-Ni powder is coated on a substrate together with a binder component and an organic solvent and dried, or C0% Nis Fe, Go-Ni, Co-CrX
Vacuum deposition of ferromagnetic materials such as Co-P and Co-N1-P,
It is formed by depositing it on a substrate by means such as ion blasting, sputtering, and plating.

また、磁気記録媒体としては、ポリエステルフィルムな
どの合成樹脂フィルムを基体とする磁気テープ、円盤や
ドラムを基体とする磁気ディスクや磁気ドラムなど、磁
気ヘッドと摺接する構造の種々の形態を包含する。
Further, the magnetic recording medium includes various types of structures that come into sliding contact with a magnetic head, such as a magnetic tape having a synthetic resin film such as a polyester film as a base, a magnetic disk or a magnetic drum having a disk or drum as a base.

〔実施例〕〔Example〕

次に、この発明の実施例について説明する。 Next, embodiments of the invention will be described.

実施例1 厚さ10μのポリエステルフィルムを真空蒸着装置に装
填し、5X10−5トールの真空下でコバルトを加熱蒸
発させてポリエステルフィルム上に厚さ1000人のコ
バルトからなる強磁性金属薄膜層を形成した。次いで、
第1図に示すプラズマ処理装置を使用し、この強磁性金
属薄膜層を形成したポリエステルフィルム1を処理槽2
内で原反ロール3から円筒状キャン4の周側面に沿って
1m/winの速度で移動させ、巻き取りロール5に巻
き取るようにセットした。同時にガス導入管6からテト
ラメチルシランのモノマーガスを200secmの流量
で導入し、またキャリアガスとして酸素ガスを15sc
cI11導入して、ガス圧0.1)−ルで電極7により
13.56MHzの高周波を出力100Wで印加し、プ
ラズマ重合保護膜層を形成した。しかる後、所定の巾に
裁断して、第2図に示すようなポリエステルフィルム1
上に強磁性金属薄膜層10およびプラズマ重合保護膜層
11を順次に積層形成した磁気テープAをつくった。こ
のときのプラズマ重合保護膜層の厚みは300人であっ
た。
Example 1 A polyester film with a thickness of 10 μm was loaded into a vacuum evaporation apparatus, and cobalt was heated and evaporated under a vacuum of 5×10 −5 Torr to form a ferromagnetic metal thin film layer of cobalt with a thickness of 100 μm on the polyester film. did. Then,
Using the plasma processing apparatus shown in FIG.
The film was moved from the original fabric roll 3 along the circumferential side of the cylindrical can 4 at a speed of 1 m/win, and set to be wound onto the winding roll 5. At the same time, monomer gas of tetramethylsilane was introduced from the gas introduction pipe 6 at a flow rate of 200 seconds, and oxygen gas was introduced as a carrier gas at a rate of 15 seconds.
cI11 was introduced, and a high frequency of 13.56 MHz was applied with an output of 100 W through the electrode 7 at a gas pressure of 0.1) to form a plasma polymerized protective film layer. After that, the polyester film 1 is cut into a predetermined width as shown in Fig. 2.
A magnetic tape A was prepared on which a ferromagnetic metal thin film layer 10 and a plasma polymerized protective film layer 11 were sequentially laminated. The thickness of the plasma polymerized protective film layer at this time was 300.

また、プラズマ重合保護膜層中におけるケイ素原子と酸
素原子の原子数の割合をオージェ電子分光計によって調
べた結果、ケイ素原子の原子数/酸素原子の原子数は1
10.32であった。なお、図中8は処理槽l内を減圧
するための排気系であり、9は電極7に高周波を印加す
るための高周波電源である。
In addition, as a result of examining the ratio of the number of silicon atoms and oxygen atoms in the plasma polymerized protective film layer using an Auger electron spectrometer, it was found that the number of silicon atoms/the number of oxygen atoms is 1.
It was 10.32. In the figure, 8 is an exhaust system for reducing the pressure inside the processing tank l, and 9 is a high frequency power source for applying high frequency to the electrode 7.

実施例2 実施例1におけるプラズマ重合保護膜層の形成において
、テトラメチルシランのモノマーガスに代えて、ヘキサ
メチルジシラザンのモノマーガスを同量使用した以外は
実施例1と同様にして磁気テープAをつくった。このと
きのプラズマ重合保護膜層の厚みは220人であった。
Example 2 Magnetic tape A was prepared in the same manner as in Example 1 except that the same amount of hexamethyldisilazane monomer gas was used in place of the tetramethylsilane monomer gas in forming the plasma polymerized protective film layer in Example 1. I made it. The thickness of the plasma polymerized protective film layer at this time was 220.

また、プラズマ重合保護膜層中におけるケイ素原子と酸
素原子の原子数の割合をオージェ電子分光計によって調
べた結果、ケイ素原子の原子数/酸素原子の原子数は1
10.36であった。
In addition, as a result of examining the ratio of the number of silicon atoms and oxygen atoms in the plasma polymerized protective film layer using an Auger electron spectrometer, it was found that the number of silicon atoms/the number of oxygen atoms is 1.
It was 10.36.

実施例3 実施例1におけるプラズマ重合保護膜層の形成において
、酸素ガスの導入量を15sccmから10sccI1
1に変更し、ガス圧を0.0951−−ルとした以外は
、実施例1と同様にして磁気テープAをつくった。この
ときのプラズマ重合保護膜層の厚みは300人であった
。また、プラズマ重合保護膜層中におけるケイ素原子と
酸素原子の原子数の割合をオージェ電子分光計によって
調べた結果、ケイ素原子の原子数/酸素原子の原子数は
110.23であった。
Example 3 In forming the plasma polymerized protective film layer in Example 1, the amount of oxygen gas introduced was changed from 15 sccm to 10 sccm
Magnetic tape A was produced in the same manner as in Example 1, except that the gas pressure was changed to 1 and the gas pressure was 0.0951-rel. The thickness of the plasma polymerized protective film layer at this time was 300. Further, as a result of examining the ratio of the number of silicon atoms to oxygen atoms in the plasma polymerized protective film layer using an Auger electron spectrometer, the ratio of the number of silicon atoms/the number of oxygen atoms was 110.23.

実施例4 実施例1におけるプラズマ重合保護膜層の形成6におい
て、酸素ガスの導入量を15secmから20secm
に変更し、ガス圧を0.105 トールとした以外は、
実施例1と同様にして磁気テープAをつくった。このと
きのプラズマ重合保護膜層の厚みは280人であった。
Example 4 In formation 6 of the plasma polymerized protective film layer in Example 1, the amount of oxygen gas introduced was changed from 15 sec to 20 sec.
except that the gas pressure was changed to 0.105 Torr.
Magnetic tape A was produced in the same manner as in Example 1. The thickness of the plasma polymerized protective film layer at this time was 280 mm.

また、プラズマ重合保護膜層中におけるケイ素原子と酸
素原子の原子数の割合をオージェ電子分光計によって調
べた結果、ケイ素原子の原子数/酸素原子の原子数は1
10.47であった。
In addition, as a result of examining the ratio of the number of silicon atoms and oxygen atoms in the plasma polymerized protective film layer using an Auger electron spectrometer, it was found that the number of silicon atoms/the number of oxygen atoms is 1.
It was 10.47.

実施例5 α−Fe磁性粉末 600重量部 エスレソクCN(積木化学工業 80μ社製、塩化ビニ
ル−酢酸ビニ ル共重合体) パンデノクスT−5250(大 30μ日本インキ社製
、ウレタンエ ラストマー) コロネートしく日本ポリウレタ 10〃ン工業社製、三
官能性低分子 量ンソシアネート化合物) メチルイソブチルケトン 400〃 トルエン 400〃 この組成物をホールミル中で72時間混合分散して磁性
塗料を調製し、この磁性塗料を厚さ10μのポリエステ
ルフィルム上に乾燥厚が4μとなるように塗布、乾燥し
て磁性層を形成した。次いで、これに実施例1と同様に
してプラズマ重合保護膜層を形成し磁気テープAをつく
った。
Example 5 α-Fe magnetic powder 600 parts by weight Esresoku CN (manufactured by Block Chemical Industry Co., Ltd. 80 μ, vinyl chloride-vinyl acetate copolymer) Pandenox T-5250 (large 30 μ, manufactured by Nippon Ink Co., Ltd., urethane elastomer) Coronat Shikuni Nippon Polyurethane 10 (manufactured by N Kogyo Co., Ltd., trifunctional low molecular weight unsocyanate compound) Methyl isobutyl ketone 400 Toluene 400 This composition was mixed and dispersed in a hole mill for 72 hours to prepare a magnetic paint. A magnetic layer was formed by coating and drying the film to a dry thickness of 4 μm. Next, a plasma polymerized protective film layer was formed thereon in the same manner as in Example 1 to produce magnetic tape A.

比較例1 実施例1におけるプラズマ重合保護膜層の形成において
、テトラメチルシランに代えてオクタメチルシクロテト
ラシロキサンを200sccn+使用し、酸素ガスの添
加を省いてガス圧を0.1トールとした以外は実施例1
と同様にして磁気テープをつくった。このときのプラズ
マ重合保護膜層の厚みは300人であった。また、プラ
ズマ重合保護膜層中におけるケイ素原子と酸素原子の原
子数の割合をオージェ電子分光計によって調べた結果、
ケイ素原子の原子数/酸素原子の原子数は1 /1.1
であった。
Comparative Example 1 In the formation of the plasma polymerized protective film layer in Example 1, 200 sccn+ of octamethylcyclotetrasiloxane was used instead of tetramethylsilane, addition of oxygen gas was omitted, and the gas pressure was set to 0.1 Torr. Example 1
I made magnetic tape in the same way. The thickness of the plasma polymerized protective film layer at this time was 300. In addition, as a result of examining the ratio of the number of silicon atoms and oxygen atoms in the plasma polymerized protective film layer using an Auger electron spectrometer,
Number of silicon atoms/number of oxygen atoms is 1/1.1
Met.

比較例2 実施例1におけるプラズマ重合保護膜層の形成において
、酸素ガスの添加を省き、ガス圧を0.1トールとした
以外は実施例1と同様にして磁気テープをつくった。こ
のときのプラズマ重合保護膜層の厚みは300人であっ
た。
Comparative Example 2 A magnetic tape was produced in the same manner as in Example 1 except that in the formation of the plasma polymerized protective film layer in Example 1, the addition of oxygen gas was omitted and the gas pressure was set to 0.1 Torr. The thickness of the plasma polymerized protective film layer at this time was 300.

比較例3 実施例2におけるプラズマ重合保護膜層の形成において
、酸素ガスの添加を省き、ガス圧を0.1トールとした
以外は実施例2と同様にして磁気テープをつくった。こ
のときのプラズマ重合保護膜層の厚みは280人であっ
た。
Comparative Example 3 A magnetic tape was produced in the same manner as in Example 2, except that in the formation of the plasma polymerized protective film layer in Example 2, the addition of oxygen gas was omitted and the gas pressure was set to 0.1 Torr. The thickness of the plasma polymerized protective film layer at this time was 280 mm.

比較例4 実施例1において、プラズマ重合保護膜層の形成を省い
た以外は実施例1と同様にして磁気テープをつくった。
Comparative Example 4 A magnetic tape was produced in the same manner as in Example 1 except that the formation of the plasma polymerized protective film layer was omitted.

各実施例および各比較例で得られた磁性テープについて
、耐久性および耐食性を試験した。耐久性試験は、得ら
れた磁気テープをサファイア針で摺動試験し、プラズマ
重合保護膜層に傷がつくまでの回数を測定して行い、耐
食性試験は、得られた磁気テープを60℃、90%RH
の条件下に7日間放置して最大磁束密度を測定し、放置
前の磁気テープの最大磁束密度を100%としてこれと
比較した値でその劣化率を調べて行った。
The magnetic tapes obtained in each Example and each Comparative Example were tested for durability and corrosion resistance. The durability test was carried out by subjecting the obtained magnetic tape to a sliding test with a sapphire needle and measuring the number of times until the plasma polymerized protective film layer was scratched.The corrosion resistance test was carried out by subjecting the obtained magnetic tape to a sliding test at 60°C. 90%RH
The maximum magnetic flux density was measured after being left under these conditions for 7 days, and the rate of deterioration was determined by comparing the maximum magnetic flux density of the magnetic tape before being left as 100%.

下表はその結果である。The table below shows the results.

〔発明の効果〕〔Effect of the invention〕

上表から明らかなように、この発明で得られた磁気テー
プ(実施例1〜5)は、いずれも比較例1ないし4で得
られた磁気テープに比し、劣化率が小さくて耐久性がよ
く、このことからこの発明によって得られる磁気記録媒
体は、耐久性および耐食性が一段と向上されていること
がわかる。
As is clear from the above table, the magnetic tapes obtained in the present invention (Examples 1 to 5) have a lower deterioration rate and are more durable than the magnetic tapes obtained in Comparative Examples 1 to 4. This clearly shows that the magnetic recording medium obtained by the present invention has further improved durability and corrosion resistance.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はプラズマ重合保護膜層を形成する際に使用する
プラズマ処理装置の1例を示す概略断面図、第2図はこ
の発明によって得られた磁気テープの部分拡大断面図で
ある。 1・・・ポリエステルフィルム(基体)、10・・・強
磁性金属薄膜層(磁性層)、11・・・プラズマ重合保
護膜層、A・・・磁気テープ(磁気記録媒体)特許出願
人 日立マクセル株式会社 ・−ニー、週 第1図 第2図 〉 −=−
FIG. 1 is a schematic sectional view showing an example of a plasma processing apparatus used in forming a plasma polymerized protective film layer, and FIG. 2 is a partially enlarged sectional view of a magnetic tape obtained by the present invention. DESCRIPTION OF SYMBOLS 1... Polyester film (substrate), 10... Ferromagnetic metal thin film layer (magnetic layer), 11... Plasma polymerized protective film layer, A... Magnetic tape (magnetic recording medium) Patent applicant Hitachi Maxell Co., Ltd. - Ni, Weekly Figure 1 Figure 2〉 -=-

Claims (1)

【特許請求の範囲】[Claims] 1、基体上に磁性層を形成し、この磁性層上にケイ素原
子に対して原子数比で0.5倍以下の酸素原子を含むケ
イ素系有機化合物のプラズマ重合保護膜層を設けたこと
を特徴とする磁気記録媒体25基体上に磁性層を形成し
、次いで、この磁性層を、ケイ素原子、炭素原子および
水素原子もしくはこれらと窒素原子からなるケイ素系有
機化合物のモノマーガスと、このモノマーガスに対する
容積比が5〜10容量%の酸素ガスとの混合ガスのプラ
ズマ中にさらしてプラズマ重合を行い、ケイ素原子に対
して原子数比で0.5倍以下の酸素原子を含むケイ素系
有機化合物のプラズマ重合保護膜層を磁性層上に形成す
ることを特徴とする磁気記録媒体の製造方法
1. A magnetic layer is formed on a substrate, and a plasma polymerized protective film layer of a silicon-based organic compound containing oxygen atoms in an atomic ratio of 0.5 times or less to silicon atoms is provided on the magnetic layer. Characteristic Magnetic Recording Medium 25 A magnetic layer is formed on a substrate, and then this magnetic layer is coated with a monomer gas of a silicon-based organic compound consisting of silicon atoms, carbon atoms, and hydrogen atoms, or these and nitrogen atoms, and this monomer gas. A silicon-based organic compound that is subjected to plasma polymerization by exposing it to a plasma of a mixed gas with oxygen gas at a volume ratio of 5 to 10% by volume, and contains oxygen atoms in an atomic ratio of 0.5 times or less to silicon atoms. A method for manufacturing a magnetic recording medium, comprising forming a plasma-polymerized protective film layer on a magnetic layer.
JP9396984A 1984-05-10 1984-05-10 Magnetic recording medium and its production Pending JPS60237634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9396984A JPS60237634A (en) 1984-05-10 1984-05-10 Magnetic recording medium and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9396984A JPS60237634A (en) 1984-05-10 1984-05-10 Magnetic recording medium and its production

Publications (1)

Publication Number Publication Date
JPS60237634A true JPS60237634A (en) 1985-11-26

Family

ID=14097227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9396984A Pending JPS60237634A (en) 1984-05-10 1984-05-10 Magnetic recording medium and its production

Country Status (1)

Country Link
JP (1) JPS60237634A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01224984A (en) * 1988-03-03 1989-09-07 Tdk Corp Member for medium and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01224984A (en) * 1988-03-03 1989-09-07 Tdk Corp Member for medium and manufacture thereof

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