JPS60254109A - Optical device - Google Patents
Optical deviceInfo
- Publication number
- JPS60254109A JPS60254109A JP59111548A JP11154884A JPS60254109A JP S60254109 A JPS60254109 A JP S60254109A JP 59111548 A JP59111548 A JP 59111548A JP 11154884 A JP11154884 A JP 11154884A JP S60254109 A JPS60254109 A JP S60254109A
- Authority
- JP
- Japan
- Prior art keywords
- light
- wafer
- pattern
- illumination
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Microscoopes, Condenser (AREA)
Abstract
Description
【発明の詳細な説明】
(発明の背景)
本発明は光電検出や観察に適した照明を対象物体へ与え
る装置に関し、特にICやLSIと云った集積回路パタ
ーンの様に特定の方向性を持った物体の光電検出や観察
に適する装置である。[Detailed Description of the Invention] (Background of the Invention) The present invention relates to a device that provides illumination suitable for photoelectric detection and observation to a target object, and in particular, to a device that provides illumination suitable for photoelectric detection and observation, and particularly for illumination that has a specific directionality, such as an integrated circuit pattern such as an IC or LSI. This device is suitable for photoelectric detection and observation of objects.
(従来技術の説明)
集積回路のパターンは回路設計あるいは描画上の利点か
ら、はとんどの線が縦線又は横線で構成されている。ま
たメモリーセルや配線パターンあるいはオートアライメ
ント用のパターンを入れる場合も±45度の斜め線に六
方限定されている。(Description of Prior Art) Most lines of integrated circuit patterns are composed of vertical lines or horizontal lines for advantages in circuit design or drawing. Furthermore, when inserting memory cells, wiring patterns, or patterns for auto-alignment, it is limited to six diagonal lines of ±45 degrees.
こうしたICあるいはLSIパターン情報を扱い、画像
処理を行うシステムとしては、例えばマスクとウェハー
、マスクと半導体露光装置あるいはウェハーと加工装置
間のオートアライメントとか、マスクやウェハーのパタ
ーンの欠陥検査システムが挙げられる。Systems that handle such IC or LSI pattern information and perform image processing include, for example, automatic alignment between masks and wafers, masks and semiconductor exposure equipment, or wafers and processing equipment, and defect inspection systems for mask and wafer patterns. .
IC,LSI等の分野で対象となる物体はパターンの形
成されたマスク又はレチクルとつ三バーである。ところ
が光学的にパターンを検出しようという際、前二者とウ
ェハーとの間には明確な差異がある。即ち、前二者は透
明な硝子基板の上にクロム又はクロム−酸化クロムとい
った薄膜がパターニングされてのっているという構造を
している。従って光学的にはパターン部は透過か、非透
過という二値の状態しか無く、コントラストの高いパタ
ーン検出を容易に行う事ができる。これに対し、ウェハ
ーは不透明物質でそれ自体が反射物体であるため、コン
トラストの良い像が得にくいという欠点がある。ウェハ
ーの検出を通常の明視野法で行うと充分なS/N此がと
れないという事は良く知られており、そのため暗視野照
明下で検出する方法が採用される。In the field of IC, LSI, etc., objects of interest are masks or reticles and bars on which patterns are formed. However, when attempting to optically detect a pattern, there is a clear difference between the former two and a wafer. That is, the former two have a structure in which a thin film of chromium or chromium-chromium oxide is patterned and placed on a transparent glass substrate. Therefore, optically, the pattern portion has only a binary state of transmission or non-transmission, and high-contrast pattern detection can be easily performed. On the other hand, since the wafer is an opaque material and is itself a reflective object, it has the disadvantage that it is difficult to obtain images with good contrast. It is well known that a sufficient S/N ratio cannot be obtained when wafers are detected using the normal bright field method, and therefore a method of detecting under dark field illumination is adopted.
従来、この種の用途のために提案された発明として特願
昭57−210908号「検知光学系」があり、この出
願に記載された光学系は系内に互いに共役となる絞りを
設け、それら絞り開口の形状を工夫する事により縦線な
ら縦線、横線なら横線を選択的に検知するものである。Conventionally, an invention proposed for this type of use is Japanese Patent Application No. 57-210908 "Detection Optical System", and the optical system described in this application has apertures that are conjugate to each other in the system, and By devising the shape of the diaphragm aperture, vertical lines can be selectively detected, and horizontal lines can be selectively detected.
この構成に基づく作用を第1図を使ってもう少し詳しく
説明する。符番1は微小凹凸の集積回路パターンを具え
るウェハー、2は顕微鏡対物レンズ、3は光路を分岐す
るビームスプリッタ−14は照明絞り、5は開口絞りで
ある。対物レンズ2の瞳と共役な位置に在る不図示の光
源から来る照明光束は4の絞りを通過して中抜けの光束
となり斜線を施した光で物体lを照明する。物体1で散
乱した光は絞り5を通り抜け、結像光6となり検出され
る。散乱せず正反射する光は絞り5でカットされる。絞
り5と6は対物レンズ2によって共役の関係に結ばれて
いる。The operation based on this configuration will be explained in more detail using FIG. 1. Reference numeral 1 is a wafer having an integrated circuit pattern of fine irregularities, 2 is a microscope objective lens, 3 is a beam splitter 14 for branching an optical path, and 5 is an aperture stop. An illumination light flux coming from a light source (not shown) located at a position conjugate with the pupil of the objective lens 2 passes through an aperture 4, becomes a hollow light flux, and illuminates the object 1 with diagonally shaded light. The light scattered by the object 1 passes through the aperture 5 and becomes imaged light 6 and is detected. Light that is specularly reflected without being scattered is cut off by the aperture 5. The apertures 5 and 6 are connected in a conjugate relationship by the objective lens 2.
この光学系の制約の1つは対物レンズ自体を照明系に用
いている事である。そして照明光は外側即ちよりNA(
開口数)の大きな光束を用いているのに実際に検知を行
うのは内側のNAの小さな部分という事で、解像力を犠
牲にして暗視野検出を行っている面がある。One of the limitations of this optical system is that the objective lens itself is used as the illumination system. And the illumination light is applied to the outside, that is, from the NA(
Even though a light beam with a large numerical aperture (numerical aperture) is used, what is actually detected is the small inner NA area, so dark field detection is performed at the expense of resolution.
又、レンズ設計上は対物レンズの各レンズを照明光が通
る分、余裕をつけて設計しなければならない事、対物レ
ンズ自体を通して照明するので、フレアが生じ易い等の
制約があった。In addition, there are other limitations in lens design, such as the need to provide a margin for the illumination light to pass through each lens of the objective lens, and the fact that illumination is transmitted through the objective lens itself, which tends to cause flare.
(発明の目的)
本発明の目的はNAの大きな光束を検出に使用できる様
にしたことである。(Object of the Invention) An object of the present invention is to enable a large NA luminous flux to be used for detection.
またこれにより、簡便な光学系でフレアも減少し、パタ
ーンの方向性に対応した正確な検出が可能であり、干渉
による弊害を緩和する作用を持つた白色光を使用できる
利点がある。Further, this has the advantage of reducing flare with a simple optical system, enabling accurate detection corresponding to the directionality of the pattern, and using white light, which has the effect of mitigating the harmful effects of interference.
(実施例の説明)
実施例の構成の説明に入る前に第2図(a)(b)を使
って光束の角度分布について説明する。第2図(a)は
ある1点Aから発散していく光束を立体的に示したもの
、(b)はその角度分布の様子を2次元的にあられした
ものである。第2図(b)で示される角度分布は第1図
で言えば対物レンズ2の焦平面上に実現される。本発明
では照明光を対物レンズに通す事はしないが、それでも
観察しようとする点Aに対する照明光及び検出光の角度
分布に制限を与える事によっである特定の方向のパター
ンを検出する事を特徴とする。(Description of the Embodiment) Before entering into the description of the configuration of the embodiment, the angular distribution of the luminous flux will be explained using FIGS. 2(a) and 2(b). FIG. 2(a) is a three-dimensional representation of a light beam diverging from a certain point A, and FIG. 2(b) is a two-dimensional representation of its angular distribution. The angular distribution shown in FIG. 2(b) is realized on the focal plane of the objective lens 2 in FIG. Although the present invention does not pass illumination light through an objective lens, it is possible to detect a pattern in a specific direction by limiting the angular distribution of illumination light and detection light with respect to point A to be observed. Features.
第3図(a)には横線を検知する光学系の角度分布を示
し、横線からの回折光は上下方向(白抜き矢印の方向)
に向う。又第3図(c)にある様に縦線からの回折光は
左右方向に向う。Figure 3 (a) shows the angular distribution of the optical system that detects the horizontal line, and the diffracted light from the horizontal line is in the vertical direction (the direction of the white arrow).
heading to Further, as shown in FIG. 3(c), the diffracted light from the vertical line is directed in the left and right directions.
第2図(a)の内側の円錐の照明光で線条を照明すれば
、回折光又は散乱光は外側の円錐と内側の円錐との間に
存在する。If the filament is illuminated with the illumination light of the inner cone in FIG. 2(a), diffracted light or scattered light will exist between the outer cone and the inner cone.
後述する実施例の構成では逆に、外側と内側の円錐の間
から照明が行われ、内側の円錐内を反射光が通過する。In the configuration of the embodiment described later, on the contrary, illumination is performed from between the outer and inner cones, and reflected light passes through the inner cones.
従って第3図(a)の横線から回折光又は散乱光をとり
出す為の照明光の角度分布は第3図(b)のハツチング
をした部分の中に存在していなければならない。図中真
中の円は結像光学系が光束を捉える角度分布の範囲であ
る。この図かられかる様にある特定の方向のパターンを
検出する照明系の角度分布は、結像光学系の捉える光束
の角度分布に対して、パターン方向に直交する方向を持
つ接線を引く事によってめる事ができる。Therefore, the angular distribution of illumination light for extracting diffracted light or scattered light from the horizontal line in FIG. 3(a) must exist within the hatched area in FIG. 3(b). The circle in the middle of the figure is the range of angular distribution in which the imaging optical system captures the light flux. As can be seen from this figure, the angular distribution of the illumination system that detects a pattern in a specific direction can be determined by drawing a tangent with a direction perpendicular to the pattern direction to the angular distribution of the light flux captured by the imaging optical system. You can
第3図(C)は縦方向のパターン、(e)は−45°方
向、(g)は+45″方向のパターンに対する照明光と
結像光の関係である。(a)と同様にハツチングを施し
た部分の角度分布に照明光学系の角度分布が納まってい
れば良い。この様に第3図より特定の方向のパターンの
みを検出する場合の照明光の角度分布を容易にめる本が
できる。Figure 3 (C) shows the relationship between the illumination light and the imaging light for the pattern in the vertical direction, (e) in the -45° direction, and (g) in the +45'' direction. It is sufficient that the angular distribution of the illumination optical system is within the angular distribution of the applied part.As shown in Figure 3, there is a book that allows you to easily determine the angular distribution of illumination light when detecting only a pattern in a specific direction. can.
第4図(a)は横方向のパターンのみを検知する場合に
要求される照明系の角度分布の存在範囲である。照明系
の角度分布はハツチングを施した部分の範囲に納まって
いれば良い。縦方向や±45″方向のパターンのみを検
知する照明光の角度分布の範囲は第4図(a)を回転さ
せる事により容易にめる事ができる。又第4図(b)は
縦線、横線は検知せず±456方向の線のみを検知する
場合に要求される照明系の角度の存在範囲である。FIG. 4(a) shows the range of angular distribution of the illumination system required when detecting only horizontal patterns. The angular distribution of the illumination system only needs to fall within the hatched area. The range of the angular distribution of the illumination light that detects only patterns in the vertical direction or ±45'' direction can be easily adjusted by rotating Fig. 4(a). Also, Fig. 4(b) shows the vertical line. , is the angular range of the illumination system required when detecting only lines in the ±456 directions without detecting horizontal lines.
本発明による照明法は従来公知の暗視野照明法すべてに
容易に適用する事ができる。代表的な例として第5図に
リングミラー10を用いて対物レンズ鏡筒の外側から照
明した例、第6図に対物レンズ鏡筒にファイバー束をと
り付けた場合の例を示す。The illumination method according to the invention can be easily applied to all conventional dark field illumination methods. As a typical example, FIG. 5 shows an example in which a ring mirror 10 is used to illuminate the objective lens barrel from outside, and FIG. 6 shows an example in which a fiber bundle is attached to the objective lens barrel.
第5図で、1はウェハーで、直交方向の線条群とこれら
と456をなす斜線群から成るパターンを設ける。2は
対物レンズである。10はリングミラーで、対物レンズ
2の瞳近傍に斜設されており、正斜影が円形の開口を具
える。11は絞りで、例えば第4図(a)のハツチング
域に相当する開口を具えて、45″ごとに間欠的に回転
されるか、あるいは第4図(b)のハツチング域に相当
する開口を具えて、固定もしくは間欠回転等が用途に応
じて適宜選択される。In FIG. 5, reference numeral 1 denotes a wafer, and a pattern consisting of a group of lines in orthogonal directions and a group of diagonal lines forming 456 lines with these lines is provided. 2 is an objective lens. Reference numeral 10 denotes a ring mirror, which is obliquely installed near the pupil of the objective lens 2, and whose orthogonal shadow has a circular aperture. Reference numeral 11 denotes a diaphragm, which has an aperture corresponding to the hatched area in FIG. 4(a) and is rotated intermittently every 45", or has an aperture corresponding to the hatched area in FIG. 4(b). Therefore, fixed or intermittent rotation is selected as appropriate depending on the application.
12は照明光源で白色光源が好ましいが、単色光源でも
良い。13はコンデンサーレンズ、14は中央に開口を
有する穴あきレンズで、穴あきレンズ14は対物レンズ
2と共軸に配される。本例では照明光源12の光束はコ
ンデンサーレンズ13で穴あきレンズ14の瞳近傍に一
旦結像してウェハー1を照明するケーラー照明を採用し
ているが、クリティカル照明法を採用することもできる
。絞り11は、ウェハー1の表面を鏡面とした時に穴あ
きレンズ14と対物レンズ2に関して対物レンズ2の瞳
と実質共役関係を満たす。15はビデオカメラ等の光電
変換器で、対物レンズ2を通してウェハー1のパターン
を撮像する。ビデオカメラ15からの信号はビデオ受像
器(不図示)に映出されるか、電気的加工処理がなされ
て表示等がなされる。尚、照明系の角度分布の範囲をよ
り厳密に決定する事が必要な場合にはリングミラー10
と絞り11の間にリレー光学系を配置するのが好ましい
。Reference numeral 12 denotes an illumination light source, which is preferably a white light source, but may also be a monochromatic light source. 13 is a condenser lens; 14 is a perforated lens having an aperture in the center; the perforated lens 14 is disposed coaxially with the objective lens 2. In this example, Koehler illumination is used in which the light beam of the illumination light source 12 is once imaged near the pupil of the perforated lens 14 by the condenser lens 13 to illuminate the wafer 1, but a critical illumination method may also be used. The aperture 11 satisfies a substantially conjugate relationship with the pupil of the objective lens 2 with respect to the perforated lens 14 and the objective lens 2 when the surface of the wafer 1 is a mirror surface. 15 is a photoelectric converter such as a video camera, which images the pattern of the wafer 1 through the objective lens 2; The signal from the video camera 15 is displayed on a video receiver (not shown) or subjected to electrical processing and displayed. In addition, if it is necessary to determine the range of angular distribution of the illumination system more precisely, the ring mirror 10
It is preferable to arrange a relay optical system between the aperture 11 and the aperture 11.
以上の構成で、ウェハー1上のパターンの方向性、例え
ば縦方向、横方向、45°方向に合わせて絞り11の回
転角度を選択すれば、その都度、選択した方向性を持っ
た線条からの回折光、散乱光のみがビデオカメラ15に
達する様な照明光束がウェハー1を照明することになる
。この場合ウェハー1に欠陥があれば、欠陥は照明光の
角度分布に係わりなく散乱光を生ずるから、受像器の画
面に他の線条と連絡しない光点が現われて発見されると
か、ウェハー1上の他のチップの映像信号との相互比較
で判別される。With the above configuration, if the rotation angle of the aperture 11 is selected in accordance with the directionality of the pattern on the wafer 1, for example, the vertical direction, the horizontal direction, or the 45° direction, each time, the filament with the selected directionality is The wafer 1 is illuminated with an illumination light flux such that only the diffracted light and scattered light of the wafer 1 reaches the video camera 15. In this case, if there is a defect on the wafer 1, the defect will cause scattered light regardless of the angular distribution of the illumination light, so a light spot that does not communicate with other filaments will appear on the screen of the image receiver and be discovered. This is determined by mutual comparison with the video signals of other chips above.
またオートアライメントのためのマーク検出系に使用す
る場合、絞り11はマークを構成する線条の方向に合わ
せて固定され、最適角度分布の照明光がマークを照明す
る。従ってマーク以外の領域に照明光が入射しても、こ
の領域からの散乱光は光電変換器15に達することはな
いから、SN比が向上する。Further, when used in a mark detection system for auto-alignment, the aperture 11 is fixed in accordance with the direction of the striations forming the mark, and the mark is illuminated with illumination light having an optimal angular distribution. Therefore, even if illumination light is incident on a region other than the mark, the scattered light from this region will not reach the photoelectric converter 15, improving the S/N ratio.
第6図は別の実施例の要部を示す。ここでは第5図の絞
り11とリングミラー10及び穴あきレンズ14の替り
に分岐されたオプティカルファイバー束20が配置され
、暗視野照明を行う、21は照明光源、22は集光用の
楕円ミラーで、楕円ミラー22は照明光源21からの光
をオプティカルファイバー束20の入射端に集光する。FIG. 6 shows the main part of another embodiment. Here, a branched optical fiber bundle 20 is arranged in place of the diaphragm 11, ring mirror 10, and perforated lens 14 shown in FIG. 5, and performs dark field illumination. 21 is an illumination light source, and 22 is an elliptical mirror for condensing light. The elliptical mirror 22 focuses the light from the illumination light source 21 onto the input end of the optical fiber bundle 20.
オプティカルファイバー束20の分岐端20a、20e
その他は被照明部が重なり合う様に内側へ向けて対物レ
ンズ2の周囲に配置する。これら分岐端のもたらす角度
分布が円形であったとすれば、第7図に示す様に分岐端
20a〜20hを配置すれば良い。ここで20aと20
eのファイバーの組合わせが横線、20bと2Ofの組
合わせが+45”方向のパターン、20Cと20gが縦
線、20dと20hが一456方向のパターンの検知に
対応する事になる。これらのワち任意のファイバーの組
合わせをシャッター23等で選択する事により検知した
い方向のパターンを特定する事ができる。Branch ends 20a, 20e of optical fiber bundle 20
The other parts are arranged around the objective lens 2 facing inward so that the illuminated parts overlap. If the angle distribution provided by these branch ends is circular, the branch ends 20a to 20h may be arranged as shown in FIG. Here 20a and 20
The fiber combination e corresponds to horizontal line detection, the combination 20b and 2Of corresponds to the pattern in the +45” direction, 20C and 20g correspond to the vertical line, and 20d and 20h correspond to the detection of the pattern in the 1456 direction. By selecting an arbitrary combination of fibers using the shutter 23 or the like, it is possible to specify a pattern in a direction desired to be detected.
勿論ファイバー20の形状や、第5図の絞り11の形状
などは任意に設定できるので、光量や各パターン間のク
ロストーク等を考慮して角度分布を設定すれば良い。Of course, the shape of the fiber 20 and the shape of the diaphragm 11 shown in FIG. 5 can be set arbitrarily, so the angular distribution can be set in consideration of the amount of light, crosstalk between each pattern, etc.
又、第6図までは反射物体の場合のみを示したが、マス
クの様な透過物体の場合にも本発明は容易に応用できる
。第8図中30は照明光路用の対物レンズ、31は第5
図の絞り11と同様の絞りである。図示されない光源か
ら来る照明光束は照明用対物レンズ30を通って暗視野
照明を行う。Furthermore, although only the case of a reflective object has been shown up to FIG. 6, the present invention can be easily applied to the case of a transparent object such as a mask. In Fig. 8, 30 is the objective lens for the illumination optical path, and 31 is the fifth objective lens.
It is a diaphragm similar to the diaphragm 11 shown in the figure. An illumination light flux coming from a light source (not shown) passes through an illumination objective lens 30 to provide dark field illumination.
ハツチングの施された光束は被照明部中の任意の1点を
照明する光束を示す。この光束はマスク1′の線条の方
向に応じた角度分布が与えられているので、規定方向を
向いた線条の回折された光のみが対物レンズ2を通って
検出に使用される。The hatched light flux indicates the light flux that illuminates any one point in the illuminated area. Since this light flux is given an angular distribution according to the direction of the filaments of the mask 1', only the diffracted light of the filaments oriented in the specified direction passes through the objective lens 2 and is used for detection.
(発明の効果)
以上述べた本発明によれば、対象物体に応じた最適照明
を行うことができると共に検出や観察のために大きな開
口数の光学系を使用できるから、高解像力の画像を得る
ことができる効果がある。(Effects of the Invention) According to the present invention described above, it is possible to perform optimal illumination according to the target object, and it is also possible to use an optical system with a large numerical aperture for detection and observation, thereby obtaining a high-resolution image. There is an effect that can be done.
またこれにより検出精度が上がるから、以降の操作速度
が増加し、また誤動作が減少する利点がある。光学系の
構造は比較的簡単なものであるから、コスト上昇や組立
手数の増加はほとんどない。This also increases detection accuracy, which has the advantage of increasing subsequent operation speed and reducing malfunctions. Since the structure of the optical system is relatively simple, there is almost no increase in cost or assembly effort.
第1図は先行例の光学断面図。第2図(a)(b)は光
束の角度分布を説明するための図。第3図(a)(c)
(e)(g)は回折方向を示す図で、(b)(d)(f
)(h)は照明光の角度分布を示す図。第4図(a)(
b)は照明光の角度分布を示す図。第5図は本発明の実
施例を示す光学断面図。第6図(a)は別実施例の光学
断面図で、(b)は構成部材の斜視図。第7図は構成部
材の配置説明図。第8図は他の実施例を示す光学断面図
。
図中、1はウェハー、2は対物レンズ、10はリングミ
ラー、11は絞り、12は照明光源、14は穴あきレン
ズ、20はオプティカルファイバー束、23はシャッタ
ー、3oは照明用の対物レンズ、31は絞り。
出願人 キャノン株式会社
兜3品
(にL) (c) (e) (El)
殆4厘
(α)(b)
第5履
第6図
1゛)(″FIG. 1 is an optical cross-sectional view of a prior example. FIGS. 2(a) and 2(b) are diagrams for explaining the angular distribution of the luminous flux. Figure 3(a)(c)
(e) (g) are diagrams showing the diffraction direction, (b) (d) (f
) and (h) are diagrams showing the angular distribution of illumination light. Figure 4(a) (
b) is a diagram showing the angular distribution of illumination light. FIG. 5 is an optical sectional view showing an embodiment of the present invention. FIG. 6(a) is an optical sectional view of another embodiment, and FIG. 6(b) is a perspective view of the constituent members. FIG. 7 is an explanatory diagram of the arrangement of the constituent members. FIG. 8 is an optical sectional view showing another embodiment. In the figure, 1 is a wafer, 2 is an objective lens, 10 is a ring mirror, 11 is an aperture, 12 is an illumination light source, 14 is a perforated lens, 20 is an optical fiber bundle, 23 is a shutter, 3o is an objective lens for illumination, 31 is the aperture. Applicant Canon Co., Ltd. Kabuto 3 items (L) (c) (e) (El) Almost 4 rin (α) (b) 5th shoe Figure 6 1 ゛) (″
Claims (1)
物体を照明する照明系と、対物レンズを通して物体から
来る光を受光する受光系を具える装置であって、物体の
所定方向のパターンによる散乱光を選択的に前記受光系
が受光する様に前記照明系の照明光に角度分布を付与す
る手段を設けることを特徴とする光学装置。(1) A device comprising an illumination system that illuminates an object without passing through an objective lens that contributes to image formation of the object, and a light receiving system that receives light coming from the object through the objective lens, the apparatus comprising a pattern of the object in a predetermined direction. An optical device comprising: means for imparting an angular distribution to illumination light from the illumination system so that the light reception system selectively receives scattered light from the illumination system.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111548A JPS60254109A (en) | 1984-05-31 | 1984-05-31 | Optical device |
| US07/225,826 US4871257A (en) | 1982-12-01 | 1988-07-29 | Optical apparatus for observing patterned article |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111548A JPS60254109A (en) | 1984-05-31 | 1984-05-31 | Optical device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60254109A true JPS60254109A (en) | 1985-12-14 |
Family
ID=14564170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59111548A Pending JPS60254109A (en) | 1982-12-01 | 1984-05-31 | Optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60254109A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63113413A (en) * | 1986-07-01 | 1988-05-18 | ラム・オプテイカル・インストルメンテ−ション・インコ−ポレ−テッド | Objective lens apparatus |
| JP2003075122A (en) * | 2001-06-22 | 2003-03-12 | Topcon Corp | Optical measuring device |
| JP2008537178A (en) * | 2005-04-19 | 2008-09-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Device for directing radiation towards a layer, apparatus comprising such a device and method of using such an apparatus |
| JP2011248216A (en) * | 2010-05-28 | 2011-12-08 | Olympus Corp | Dark field optical system |
-
1984
- 1984-05-31 JP JP59111548A patent/JPS60254109A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63113413A (en) * | 1986-07-01 | 1988-05-18 | ラム・オプテイカル・インストルメンテ−ション・インコ−ポレ−テッド | Objective lens apparatus |
| JP2003075122A (en) * | 2001-06-22 | 2003-03-12 | Topcon Corp | Optical measuring device |
| JP2008537178A (en) * | 2005-04-19 | 2008-09-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Device for directing radiation towards a layer, apparatus comprising such a device and method of using such an apparatus |
| JP2011248216A (en) * | 2010-05-28 | 2011-12-08 | Olympus Corp | Dark field optical system |
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