JPS60254689A - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法

Info

Publication number
JPS60254689A
JPS60254689A JP59110404A JP11040484A JPS60254689A JP S60254689 A JPS60254689 A JP S60254689A JP 59110404 A JP59110404 A JP 59110404A JP 11040484 A JP11040484 A JP 11040484A JP S60254689 A JPS60254689 A JP S60254689A
Authority
JP
Japan
Prior art keywords
layer
single crystal
laminated
semiconductor laser
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59110404A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0137865B2 (cs
Inventor
Tatsuhiko Niina
新名　達彦
Takao Yamaguchi
山口　隆夫
Keiichi Yoshitoshi
慶一 吉年
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59110404A priority Critical patent/JPS60254689A/ja
Publication of JPS60254689A publication Critical patent/JPS60254689A/ja
Publication of JPH0137865B2 publication Critical patent/JPH0137865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP59110404A 1984-05-30 1984-05-30 半導体レーザの製造方法 Granted JPS60254689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59110404A JPS60254689A (ja) 1984-05-30 1984-05-30 半導体レーザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59110404A JPS60254689A (ja) 1984-05-30 1984-05-30 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
JPS60254689A true JPS60254689A (ja) 1985-12-16
JPH0137865B2 JPH0137865B2 (cs) 1989-08-09

Family

ID=14534932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59110404A Granted JPS60254689A (ja) 1984-05-30 1984-05-30 半導体レーザの製造方法

Country Status (1)

Country Link
JP (1) JPS60254689A (cs)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749289A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Semiconductor laser device
JPS58176991A (ja) * 1982-04-09 1983-10-17 Sanyo Electric Co Ltd 半導体レ−ザ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749289A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Semiconductor laser device
JPS58176991A (ja) * 1982-04-09 1983-10-17 Sanyo Electric Co Ltd 半導体レ−ザ

Also Published As

Publication number Publication date
JPH0137865B2 (cs) 1989-08-09

Similar Documents

Publication Publication Date Title
US4734385A (en) Semiconductor laser element suitable for production by a MO-CVD method
US4099305A (en) Fabrication of mesa devices by MBE growth over channeled substrates
JPH05327112A (ja) 半導体レーザの製造方法
JPS6349396B2 (cs)
JPS6079785A (ja) 半導体レ−ザ装置
JPH0137865B2 (cs)
JPS58206184A (ja) 半導体レ−ザ素子及びその製造方法
JPH0815230B2 (ja) 埋込みストライプ形半導体レ−ザ−の作成方法及び当該方法により得られるレ−ザ−
JPS6381887A (ja) 半導体レ−ザ装置およびその製造方法
CA1163350A (en) Semiconductor laser
JPH0646667B2 (ja) ＡｌＧａＩｎＰ半導体レ−ザの作製方法
JP3143105B2 (ja) 半導体レーザ素子の製造方法
JPH01304793A (ja) 半導体レーザ装置の製造方法
JP2911077B2 (ja) 半導体装置の製造方法
JPH01286486A (ja) 半導体レーザの製造方法
JPS63187A (ja) 半導体レ−ザ及びその製造方法
JPS5811760B2 (ja) ハンドウタイレ−ザ オヨビ ソノセイゾウホウホウ
JPS63164284A (ja) 半導体レ−ザ装置及びその製造方法
JPS6086889A (ja) 半導体レ−ザ装置の製造方法
JPH01168091A (ja) 半導体レーザ素子
JPH0856047A (ja) 半導体装置およびその製造方法
JPS6111478B2 (cs)
JPS60262417A (ja) 半導体結晶の製造方法
JPH01289288A (ja) 半導体レーザ素子及びその製造方法
JPH0195584A (ja) 半導体レーザの製造方法