JPS6032326A - Drying method for semiconductor wafer - Google Patents

Abstract

PURPOSE:To enable to dry a semiconductor wafer easily and cleanly by a method wherein the semiconductor wafer is rotated at a high speed together with the first vacuum nozzle in the state wherein the semiconductor is supported, in attractive manner, and the second vacuum nozzle is closely contacted in such a manner that the first vacuum nozzle will not be overlapped on the closely contacted part. CONSTITUTION:A wet semiconductor wafer 60 is placed on the first vacuum nozzle 10 is such a manner that it is brought in line with the center of the first vacuum nozzle 10. The semiconductor wafer is attracted by a vacuum system, and when the first vacuum nozzle 10 is rotated at a high speed using a rotating system, the waterdrop 70 on the semiconductor wafer is scattered to outside the semiconductor wafer 60. Then, the first vacuum nozzle 10 rotated at a high speed comes to a stop, the semiconductor wafer 60 is removed from the first vacuum nozzle 10, and the semiconductor wafer 60 is placed in such a manner that it is brought in line with the center of a vacuum nozzle 40. The semiconductor wafer 60 is attracted to the second vacuum nozzle 40 using the vacuum system, and when said second vacuum nozzle 40 is rotated at a high speed, the waterdrop 70 left on the attracting part of the first vacuum nozzle 10 is scattered to outside the semiconductor wafer 60.

Description

DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a semiconductor wafer drying method that facilitates drying of a contact area between a wafer and a carrier and prevents dust from adhering and recontaminating the drying method.

(Conventional technology) A conventional method of drying a cleaned wafer is shown in FIG.

FIG. 1(a) is a plan view, and FIG. 1(b) is a simplified sectional view.

In this method, which is generally carried out in batch processing, the carrier 3 containing the wafer 2 is placed in the rotor 1, and the wafer 2 and the carrier 3 are dried by rotating at high speed. The contact area is difficult to dry.

In addition, static electricity was generated and attracted dust, and the singing was performed in batches. However, water droplets on the wafer 2 from which minute dust and dirt have not yet been removed are caused by centrifugal force to cause water droplets to fall onto the outer cover 4.
When the wafer hits the wafer, it scatters and dries while adhering to the clean wafer 2, causing re-contamination.

(Object of the Invention) The present invention was made in order to eliminate the above-mentioned drawbacks of the conventional semiconductor wafer. The purpose is to provide a method for drying.

(Structure of the Invention) The method for drying the semiconductor wafer 1 of the present invention is to bring the first vacuum nozzle into close contact with a part of the main surface of the semiconductor wafer, and dry the semiconductor wafer together with the vacuum nozzle while holding the semiconductor wafer by suction. The semiconductor wafer was rotated at high speed to scatter and remove the moisture attached to the surface of the semiconductor wafer, and then the rotation was stopped, and the vacuum nozzle was released from the main surface of the semiconductor wafer, so that the first vacuum nozzle was brought into close contact with a part of the main surface of the semiconductor wafer. A second layer is placed on the main surface of the semiconductor wafer so that it overlaps with the main surface of the semiconductor wafer.
The vacuum nozzle is placed in close contact with the semiconductor wafer, and the semiconductor wafer is rotated at high speed together with the second vacuum nozzle while the semiconductor wafer is held by suction, thereby scattering and removing moisture remaining on the surface of the semiconductor wafer.

(Example) Hereinafter, an example of the semiconductor wafer drying method of the present invention will be described based on the drawings. FIG. 2(a) is a plan view of a first vacuum nozzle applied to one embodiment thereof,
FIG. 2(b) is a simplified sectional view.

The first vacuum nozzle 10 shown in both FIG. A drainage sump hole 30 is provided.

FIG. 3(a) is a plan view showing the structure of the second vacuum nozzle 40 applied to the present invention, and FIG. 3(b) is a sectional view thereof. This second vacuum nozzle 40 has a groove 50 for sucking a semiconductor wafer (not shown), and the diameter of the suction surface is such that it does not overlap with the doughnut-shaped suction part of the first vacuum nozzle 10 and is located inside the first vacuum nozzle 10. It has a small lifespan.

Next, referring to FIG. 4, a method of drying a semiconductor wafer according to the present invention will be explained using the first and second vacuum nozzles. First, as shown in FIG. 4(a), in the first step (first scattering removal step), wet semiconductor wafer S60 is placed on the first vacuum nozzle 10.
Place it so that it aligns with the center of 0.

At this time, the semiconductor wafer 60 is preferably placed on the first vacuum nozzle 10 so that the surface (back surface) facing the device forming surface is in close contact with the semiconductor wafer 60 so as not to damage the devices.

Next, when the water droplets 70 on the semiconductor wafer 60 are adsorbed by a vacuum system (not shown) and the first vacuum nozzle 10 is rotated at high speed by a rotation system (also not shown), the water droplets 70 on the semiconductor wafer 60 are caused by rotational centrifugal force as shown by the arrow. , and scattered outside the semiconductor wafer 60.

As a result, the parts of the first vacuum nozzle 10 other than the suction part are dried.

Next, the rotation of the first vacuum nozzle 10 which is rotating at high speed is stopped, the semiconductor wafer 60 is removed from the first vacuum nozzle 10, and the second step (second scattering removal step) shown in FIG. 4(b) is carried out. ) with the first vacuum nozzle 10
Similarly, the semiconductor wafer 60 is passed through the second vacuum nozzle 40.
Place it so that it is aligned with the center.

At this time, the semiconductor wafer 60 is preferably placed on the second vacuum nozzle 40 so that the surface facing the device formation surface is in close contact with the second vacuum nozzle 40 so as not to damage the devices.

Next, the semiconductor wafer 60 is placed in a second vacuum system (not shown).
When the water droplets 70 are attracted to the vacuum nozzle 40 and the second vacuum nozzle 40 is similarly rotated at high speed by a rotation system (not shown), the water droplets 70 remaining in the suction portion of the first vacuum nozzle IO are blown out of the semiconductor wafer 60 by the rotational centrifugal force. By performing the first step and the second step, the moisture on the semiconductor wafer 60 is completely removed.

As described above in the first embodiment, in the second scattering removal process, the part that does not overlap with the vacuum chucked part of the backside of the semiconductor wafer is vacuum-chucked in the first scattering removal process. Moisture remaining between the vacuum chuck and the back surface of the wafer can be completely removed by scattering.

Furthermore, if the vacuum chuck position in the first scattering removal process is outside the vacuum chuck position in the second scattering removal process, that is, in the direction of the outer circumference of the semiconductor wafer, moisture on the semiconductor wafer surface can be completely removed from the wafer. Can be removed outside.

In addition, compared to the conventional method of drying in batches, clean wafers are not contaminated during drying, and unnecessary drying of carriers can be omitted, reducing dust generation and static electricity generation. This also reduces dust adsorption.

Since drying is carried out in a single wafer manner, it is easy to maintain the drying environment in a clean state, resulting in improved quality.

(Effects of the Invention) As described above, according to the semiconductor wafer drying method of the present invention, the drying of the carrier is omitted, and the first vacuum nozzle is brought into close contact with a part of the main surface of the semiconductor wafer using the single-wafer method. The semiconductor wafer is rotated at high speed together with the first vacuum nozzle while the wafer is being sucked and held, and after the moisture adhering to the semiconductor wafer is scattered and removed, the rotation is stopped;
The first vacuum nozzle is opened from the main surface of the semiconductor wafer, and the second vacuum nozzle is brought into close contact with this main surface so that the first vacuum nozzle does not overlap with the part where the first vacuum nozzle is in close contact with a part of the main surface, and the semiconductor wafer is held by suction. Rotating the semiconductor wafer at high speed together with the second vacuum nozzle,
Since the water droplets remaining on the surface are scattered and removed, the drying environmental conditions can be maintained in a clean state, which has the advantage that drying can be performed easily and cleanly.

[Brief explanation of drawings]

Figure 1(a) is a plan view of a conventional ueno/drying device.
FIG. 2(b) is a sectional view of FIG. 1(a), FIG. 2(a) is a plan view of the first vacuum nozzle applied to an embodiment of the semiconductor wafer drying method of the present invention, and FIG. ) is a cross-sectional view of FIG. 2(a), FIG. 3(a) is a plan view of the second vacuum nozzle applied to the semiconductor wafer drying method of the present invention, and FIG. 3(b) is a cross-sectional view of FIG. 3(a). ), Figure 4(a)
) and FIG. 4(b) are process explanatory diagrams of the method for drying semiconductor Uninow according to the present invention. 10...First vacuum nozzle, 20.50...Adsorption groove, 30...Drainage hole, 60...Semiconductor wafer
, 70...water droplets. Figure 1 Figure 2 Figure 3 Figure 4

Claims (3)

[Claims] (1) A first vacuum nozzle is brought into close contact with a part of the main surface of a semiconductor wafer, and the semiconductor wafer is rotated at high speed together with the first vacuum nozzle while the semiconductor wafer is held by suction, and the moisture adhering to the surface of the semiconductor wafer is a first scattering removal step of releasing the first vacuum nozzle from the main surface of the semiconductor wafer by stopping the rotation after removing the scattering; and a part where the first vacuum nozzle is in close contact with a part of the main surface of the semiconductor wafer. A second vacuum nozzle is brought into close contact with the main surface portion of the semiconductor wafer that does not overlap,
rotating the semiconductor wafer at high speed together with the second vacuum nozzle while holding the semiconductor wafer by suction;
A method for drying a semiconductor wafer by two-step scattering removal, including a second scattering removal step of scattering and removing moisture remaining on the surface of the semiconductor wafer. (2) The semiconductor wafer according to claim 1, wherein the semiconductor wafer suction/holding position of the first vacuum nozzle is υ outside of the semiconductor wafer suction/holding position of the second vacuum nozzle. Drying method. (3) The method for drying a semiconductor wafer according to claim 1, wherein the main surface of the semiconductor wafer is a surface opposite to a surface on which semiconductor elements are formed.