JPS6032401A - Band pass filter - Google Patents

Band pass filter

Info

Publication number
JPS6032401A
JPS6032401A JP14202383A JP14202383A JPS6032401A JP S6032401 A JPS6032401 A JP S6032401A JP 14202383 A JP14202383 A JP 14202383A JP 14202383 A JP14202383 A JP 14202383A JP S6032401 A JPS6032401 A JP S6032401A
Authority
JP
Japan
Prior art keywords
resonators
dielectric substrate
wavelength
input
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14202383A
Other languages
Japanese (ja)
Inventor
Yoshio Kasuga
春日 義男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14202383A priority Critical patent/JPS6032401A/en
Publication of JPS6032401A publication Critical patent/JPS6032401A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • H01P1/20327Electromagnetic interstage coupling
    • H01P1/20354Non-comb or non-interdigital filters
    • H01P1/20363Linear resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • H01P1/20327Electromagnetic interstage coupling
    • H01P1/20354Non-comb or non-interdigital filters
    • H01P1/20381Special shape resonators

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

PURPOSE:To obtain a stable characteristic and also to attain miniaturization and light weight of a microwave communication device by providing a prescribed hole to a dielectric substrate between half-wavelength resonators or the half- wavelength resonator and an input/output line. CONSTITUTION:The dielectric substrate 3 is provided with the resonators 1 made of conductor thin film and the input/output lines 2. The amount of coupling among the resonators 1 depends on the interval of the resonators and the size and number of the holes. Since the dielectric constant is decreased substantially by providing the holes, the size of the dielectric substrate 3 is decreased by providing the holes above and the interval between the half-wavelength resonators or the half-wavelength resonator and the input/output line is narrowed.

Description

【発明の詳細な説明】 本発明はマ・イクロ波帯通信装置に使用されマイクロ波
集積回路(+viIC)からなる帯域ろ波器に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bandpass filter that is used in a microwave band communication device and is composed of a microwave integrated circuit (+viIC).

近年、マイクロ波帯通信機器の小形、軽量化に伴い、導
波管おるいは同軸線路で構成されていた帯域F波器も、
誘電体基板上に薄膜導体により共振器を構成したマイク
ロ波集積回路(iviIC)が製作されるようになった
。これらの+VI I C化帯域沖波器は、特に帯域幅
の狭い場合に設計が極めて困難であシ、その結果製品の
性能の安定性も悪いという欠点があった。
In recent years, as microwave band communication equipment has become smaller and lighter, F-band F wave devices, which used to be composed of waveguides or coaxial lines, have become smaller and lighter.
Microwave integrated circuits (iviICs) in which a resonator is constructed of a thin film conductor on a dielectric substrate have come to be manufactured. These +VI I C band offshore transducers are extremely difficult to design, especially when the bandwidth is narrow, and as a result, the product has the drawback of poor performance stability.

先ず、帯域通過p波器(以下BPFという)について説
明する。第1図は従来のMIC化BPFの構成例を示す
平面図でめる。薄膜導体で形成された複数の半波長共振
器1及び入出力線路2は相互の間隔d。1.d工2.・
・・によって所要の電磁的結合量をもって結合されるよ
う互に平行に配置されている。
First, a bandpass p-wave filter (hereinafter referred to as BPF) will be explained. FIG. 1 is a plan view showing an example of the configuration of a conventional MIC BPF. A plurality of half-wavelength resonators 1 and input/output lines 2 formed of thin film conductors are spaced apart from each other by a distance d. 1. d engineering 2.・
... are arranged in parallel to each other so that they are coupled with the required amount of electromagnetic coupling.

この形式のBPFは比帯域幅(通過帯域幅を中心周波数
で除したパラメータ)が10チ〜15%の場合はほぼ設
計通シの電気的性能が得られる。しかしながら比帯域幅
が数チになると各共振器間及び入出力線路と、共振器間
には非常に小さな電磁的結合量が要求され、間隔d。□
r d1□、・・・を大きくとる必要が生ずる。
In this type of BPF, when the fractional bandwidth (parameter obtained by dividing the passband width by the center frequency) is 10% to 15%, almost the designed electrical performance can be obtained. However, when the fractional bandwidth becomes several inches, a very small amount of electromagnetic coupling is required between each resonator and between the input/output line and the resonator, and the distance d is required. □
It becomes necessary to increase r d1□, .

この電磁的結合量は、共振器導体間の電磁界分布によっ
て定寸る。このことを第1図の断面図である!!2図に
より説明する。すなわち、基板3上の共振器1と基板3
の下側にある接地導体4との間には間周波電界Eが発生
し、それに直交する高周波磁界Hが存在する。これら共
振器1間の結合は高周波磁界H間の交わりによって生じ
、共振器間隔dljが共振器導体幅Wの1.5倍より小
さい時、共振器1間の結合量は電磁界分布から解析され
る結合量によく一致する。しかしながら、共振器間隔d
ijが共振器導体幅Wの2倍、3倍と大きくなるととも
に実際の結合量は電磁界解析による結合量よシも犬きく
なる。
The amount of electromagnetic coupling is determined by the electromagnetic field distribution between the resonator conductors. This is illustrated in the cross-sectional view of Figure 1! ! This will be explained using Figure 2. That is, the resonator 1 on the substrate 3 and the substrate 3
An inter-frequency electric field E is generated between the conductor 4 and the ground conductor 4 on the lower side, and a high-frequency magnetic field H exists orthogonal thereto. The coupling between these resonators 1 is caused by the intersection of high-frequency magnetic fields H, and when the resonator spacing dlj is smaller than 1.5 times the resonator conductor width W, the amount of coupling between the resonators 1 is analyzed from the electromagnetic field distribution. It is in good agreement with the amount of binding. However, the resonator spacing d
As ij increases to twice or triple the resonator conductor width W, the actual amount of coupling becomes even greater than the amount of coupling determined by electromagnetic field analysis.

この原因としては、1)通常の電磁界解析では扱われな
い電磁界の漏れ効果の影響がある、2)誘電体基板が一
種の誘電体導波管となり、この誘電体内を電磁波が伝播
して共振器導体に結合する、3)共振器間隔が大きくな
るので必然的に誘電体基板が太きくなり、従って誘電体
基板を収容する。
The causes of this are: 1) There is an effect of electromagnetic field leakage, which is not treated in normal electromagnetic field analysis, and 2) The dielectric substrate acts as a type of dielectric waveguide, and electromagnetic waves propagate within this dielectric. 3) As the resonator spacing increases, the dielectric substrate inevitably becomes thicker, thus accommodating the dielectric substrate.

ケース(通常金属導体である)が太きくなって導波管モ
ード(空間伝播モード)が伝播しやすくなり共振器導体
に結合する、等が考えられる。
It is conceivable that the case (usually a metal conductor) becomes thicker, making it easier for the waveguide mode (space propagation mode) to propagate and couple to the resonator conductor.

これらの要素はその電磁界解析が極めて困難であり、定
量的に結合量を把握するのは不可能に近い。また、誘電
体基板を収容するケースの形状。
It is extremely difficult to analyze the electromagnetic field of these elements, and it is nearly impossible to quantitatively grasp the amount of coupling. Also, the shape of the case that houses the dielectric substrate.

寸法に影響されるために、誘電体基板単体での性能を評
価することが困難である。従って、従来の狭帯域IVi
 I C化BPFは殆んど試作と実験の繰返しによって
設計寸法全決定しており、また製作品の寸法誤差等によ
って性能がバラク〈ため、安定な性能を得ることが極め
て困難であった。
It is difficult to evaluate the performance of a single dielectric substrate because it is affected by its dimensions. Therefore, the conventional narrowband IVi
The design dimensions of most IC-based BPFs are determined through repeated trial production and experimentation, and performance varies due to dimensional errors in manufactured products, making it extremely difficult to obtain stable performance.

本発明の目的は、従来の欠点tS決し、性能の安定な狭
帯域ivl I C化BPF’f提供することにある。
An object of the present invention is to provide a narrow-band IVC-based BPF'f which eliminates the drawbacks of the conventional technology and has stable performance.

本発明の構成は、誘電体基板の一面に薄膜導体により形
成され互に電磁的に結合した俵数の半波長共振器及び入
出力線路を設けたマイクロ波集積回路からなる帯域戸波
器において、前記各半波長共振器間あるいはこれら半波
長共振器および前記入出力線路の間の誘電体基板に所定
の穴を設けることにより、前記各半波長共振器間あるい
はこれら半波長共振器および入出力線路間の間隔を狭く
したことを特徴とする。
The configuration of the present invention is a bandpass filter consisting of a microwave integrated circuit including half-wavelength resonators and input/output lines formed on one surface of a dielectric substrate by a thin film conductor and electromagnetically coupled to each other. By providing a predetermined hole in the dielectric substrate between each half-wavelength resonator or between these half-wavelength resonators and the input/output line, It is characterized by narrowing the interval between.

以下図面により本発明の詳細な説明する。The present invention will be explained in detail below with reference to the drawings.

第3図は本発明の実施例の平面図である。図において、
1は導体薄膜による共振器、2は人出力線路、3は誘電
体基板、5は本発明の特徴である誘電体基板に設けられ
た穴である。この場合共振器1の間の結合量は、共振器
間隔及び穴の大きさと数によって決まる。このような穴
を設けることによって実質的に誘電率を小さくできるの
で、これら共振器10間隔を小さくすることができる。
FIG. 3 is a plan view of an embodiment of the invention. In the figure,
1 is a resonator made of a conductive thin film, 2 is a human output line, 3 is a dielectric substrate, and 5 is a hole provided in the dielectric substrate, which is a feature of the present invention. In this case, the amount of coupling between the resonators 1 is determined by the resonator spacing and the size and number of holes. By providing such a hole, the dielectric constant can be substantially reduced, so the spacing between these resonators 10 can be reduced.

したがって、誘電体基板3を小さくでき、ケースによる
導波2−゛モードの発生を防ぐことができるとともに、
誘電体内の電磁波伝播が穴5によって阻止されるので、
この影響による共振器間の電磁的結合も無視できる。即
ち、本発明のMIC化BPFは、従来品の欠点の原因と
なっていた3つの不確定要素の内の2つの影響を無視し
得る程度に小さくできる。
Therefore, the dielectric substrate 3 can be made smaller, and the generation of waveguide 2-' mode due to the case can be prevented.
Since electromagnetic wave propagation within the dielectric is blocked by the hole 5,
Electromagnetic coupling between resonators due to this effect can also be ignored. That is, the MIC BPF of the present invention can reduce the effects of two of the three uncertain factors that caused the defects of conventional products to a negligible extent.

従って、設計寸法を決定する為の試作と実験の繰返し回
数が少なくなるとともに、製品相互間の電気的性能のバ
ラツキも小さく、安定な特性が得られる。更に、誘電体
基板を小でくできるので、マイクロ波通信装置の小形化
、軽量化にも効果が大きい。
Therefore, the number of repetitions of trial production and experiments for determining design dimensions is reduced, and variations in electrical performance between products are also small, resulting in stable characteristics. Furthermore, since the dielectric substrate can be made smaller, it is highly effective in reducing the size and weight of microwave communication devices.

以上、帯域通過P波器について詳細に説明したが、本発
明はLVi I C比帯域阻止p波器(以下BgFとい
う)の場合にもその効果が期待できる。第4図は本発明
による*vi I C化BEFの実施例の平面図を示す
。入出力線路2と共振器1との間に穴5を設けることに
よって間隔do1’に小さくするとともに不確実な結合
を阻止することができる。又、共振器1の間に穴5を設
けることによってBEFにとって有害な共振器間結合を
小さくできることもBPFにおける場合と同様である。
Although the bandpass P-wave device has been described in detail above, the present invention can also be expected to be effective in the case of an LVi I C band-stop p-wave device (hereinafter referred to as BgF). FIG. 4 shows a plan view of an embodiment of *vi I C-ized BEF according to the present invention. By providing the hole 5 between the input/output line 2 and the resonator 1, the distance can be reduced to do1' and uncertain coupling can be prevented. Further, by providing the holes 5 between the resonators 1, inter-resonator coupling harmful to the BEF can be reduced, as in the case of the BPF.

以上の説明においては、円形の穴5 VCより説明した
が、この円形穴の代りに長円形あるいはケ巨形の穴を用
いても同様の効果が得られることはいうまでもない。
In the above explanation, the circular hole 5 VC was explained, but it goes without saying that the same effect can be obtained by using an oval or gigantic hole instead of the circular hole.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のMIC化帯域通過通過器の平面図、第2
図は第1図の共振器間の結合を示す縦断面図、第3図は
本発明による+vl I C比帯域通過F波器の一実施
例を示す平面図、第4図は本発明の第2の実施例を示す
平面図である。 図において、1・・・半波長共振器、2・・・・・・入
出力線路、3・・・・・・誘電体基板、4・・・・・・
接地導体、5・・・誘電体基板に明けられた穴、である
。 ′〜ご・ 代理人 弁理士 内 原 1′ ・  日、□ 、。 ′−−−′ 喜/ 図
Figure 1 is a plan view of a conventional MIC bandpass filter;
The figure is a longitudinal cross-sectional view showing the coupling between the resonators in FIG. FIG. 2 is a plan view showing a second embodiment. In the figure, 1... Half wavelength resonator, 2... Input/output line, 3... Dielectric substrate, 4...
Ground conductor, 5... hole made in the dielectric substrate. ' ~ Agent Patent Attorney Uchihara 1' Day, □,. ′−−−′ Joy/Figure

Claims (1)

【特許請求の範囲】[Claims] 誘電体基板の一面に薄膜導体によ多形成され互に電磁的
に結合した複数の半波長共振器および人出力線路を設け
たマイクロ波集積回路からなる帯域ろ波器において、前
記各半波長共振器間あるいはこれら半波長共振器および
前記入出力線路の間の誘電体基板に所定の穴を設けるこ
とにより、前記各半波長共振器間あるいはこれら半波長
共振器および入出力線路間の間隔を狭くしたことを%似
とする帯域沖波器。
In a bandpass filter consisting of a microwave integrated circuit having a plurality of half-wavelength resonators formed of a thin film conductor on one surface of a dielectric substrate and provided with a plurality of half-wavelength resonators electromagnetically coupled to each other and a human output line, each half-wavelength resonance By providing a predetermined hole in the dielectric substrate between the half-wavelength resonators or between the half-wavelength resonators and the input/output line, the interval between the half-wavelength resonators or between the half-wavelength resonators and the input/output line can be narrowed. Bandwidth wave device that is % similar to what you did.
JP14202383A 1983-08-03 1983-08-03 Band pass filter Pending JPS6032401A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14202383A JPS6032401A (en) 1983-08-03 1983-08-03 Band pass filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14202383A JPS6032401A (en) 1983-08-03 1983-08-03 Band pass filter

Publications (1)

Publication Number Publication Date
JPS6032401A true JPS6032401A (en) 1985-02-19

Family

ID=15305565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14202383A Pending JPS6032401A (en) 1983-08-03 1983-08-03 Band pass filter

Country Status (1)

Country Link
JP (1) JPS6032401A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114601A (en) * 1984-11-08 1986-06-02 Matsushita Electric Ind Co Ltd Filter device
US5187459A (en) * 1991-11-18 1993-02-16 Raytheon Company Compact coupled line filter circuit
WO1995016306A1 (en) * 1993-12-07 1995-06-15 The University Of Birmingham Electrical filter
JP2009529238A (en) * 2006-03-06 2009-08-13 フォームファクター, インコーポレイテッド Stack guard structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114601A (en) * 1984-11-08 1986-06-02 Matsushita Electric Ind Co Ltd Filter device
US5187459A (en) * 1991-11-18 1993-02-16 Raytheon Company Compact coupled line filter circuit
WO1995016306A1 (en) * 1993-12-07 1995-06-15 The University Of Birmingham Electrical filter
JP2009529238A (en) * 2006-03-06 2009-08-13 フォームファクター, インコーポレイテッド Stack guard structure

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