JPS6036367A - Ceramic composition - Google Patents
Ceramic compositionInfo
- Publication number
- JPS6036367A JPS6036367A JP58144781A JP14478183A JPS6036367A JP S6036367 A JPS6036367 A JP S6036367A JP 58144781 A JP58144781 A JP 58144781A JP 14478183 A JP14478183 A JP 14478183A JP S6036367 A JPS6036367 A JP S6036367A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- points
- main component
- lead
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 35
- 239000000919 ceramic Substances 0.000 title description 5
- 239000011777 magnesium Substances 0.000 claims description 8
- 238000010586 diagram Methods 0.000 claims description 3
- LIABKAQKQSUQJX-UHFFFAOYSA-N [Mn].[Pb] Chemical compound [Mn].[Pb] LIABKAQKQSUQJX-UHFFFAOYSA-N 0.000 claims description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 2
- FKSZLDCMQZJMFN-UHFFFAOYSA-N [Mg].[Pb] Chemical compound [Mg].[Pb] FKSZLDCMQZJMFN-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 11
- 229910052573 porcelain Inorganic materials 0.000 description 11
- 238000009413 insulation Methods 0.000 description 9
- 238000005452 bending Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- DGAHKUBUPHJKDE-UHFFFAOYSA-N indium lead Chemical compound [In].[Pb] DGAHKUBUPHJKDE-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 229940093474 manganese carbonate Drugs 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、磁器組成物、特に1100℃以下の低温で焼
結でき、誘電率が高く、室温および高温における絶縁抵
抗が高く、しかも機械的強度の高い磁器組成物に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a porcelain composition, particularly a porcelain composition that can be sintered at a low temperature of 1100°C or less, has a high dielectric constant, has a high insulation resistance at room temperature and high temperature, and has high mechanical strength. It is something.
従来、誘電体磁器組成物として、チタン酸バリウム(B
aTi(h) を主成分とする磁器が広く実用化されて
いることは周知のとおりである。しかしながら、チタン
酸バリウム(BaTiOs)を主成分とするものは、焼
結温度が通常1300〜1400℃の高温である。この
ためこれを積層形コンデンサに利用する場合には内部電
極としてこの焼結温度に耐え得る材料、例えば白金、パ
ラジウムなどの高価な貴金属を使用しなければならず、
製造コストが高くつくという欠点がある。積層形コンデ
ンサを安く作るだめには、銀、ニッケルなどを主成分と
する安価な金属が内部電極に使用できるような、できる
だけ低温、特に1100℃以下で焼結できる磁器が必要
である。Conventionally, barium titanate (B
It is well known that porcelain containing aTi(h) as a main component has been widely put into practical use. However, those whose main component is barium titanate (BaTiOs) have a sintering temperature of usually 1300 to 1400°C. Therefore, when using this in a multilayer capacitor, a material that can withstand this sintering temperature must be used for the internal electrode, such as an expensive noble metal such as platinum or palladium.
The disadvantage is that manufacturing costs are high. In order to make multilayer capacitors cheaply, it is necessary to use porcelain that can be sintered at as low a temperature as possible, especially below 1100°C, so that inexpensive metals mainly composed of silver and nickel can be used for the internal electrodes.
また磁器組成物の電気的特性として、誘電率が高く、誘
電損失が小さく、絶縁抵抗が高しことが基本的に製水さ
れる。さらに絶縁抵抗の値に関しては、高信頼性の部品
を要求する米国防総省の規格であるミリタリースペシフ
イケイション(ML 1 i −tary 5peci
fication)のMIL −C−55681Bにお
いては、室温における値のみならず、125℃における
値も定められている。これをみてもわかるように、信頼
性の高い磁器コンデンサを得るためには、室温における
値のみならず、予想される最高温度における絶縁抵抗も
高い値をとることが必要である。Furthermore, the electrical properties of a ceramic composition are basically high dielectric constant, low dielectric loss, and high insulation resistance. Furthermore, the value of insulation resistance is based on Military Specification (ML1i-tary 5peci), which is a US Department of Defense standard that requires highly reliable components.
In the MIL-C-55681B of fication), not only the value at room temperature but also the value at 125°C is defined. As can be seen from this, in order to obtain a highly reliable ceramic capacitor, it is necessary not only to have a high value of insulation resistance at room temperature, but also to have a high value of insulation resistance at the highest expected temperature.
また、BJa形チップコンデンサの場合は、チップコン
デンサを基板に実装したとき、基板とチップコンデンサ
を構成している磁器との熱膨張係数の違いにより、チッ
プコンデンサに機械的な歪が加わり、チップコンデンサ
にクラックが発生したり、破損したりすることがある。In addition, in the case of BJa type chip capacitors, when the chip capacitor is mounted on a board, mechanical strain is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and the porcelain that makes up the chip capacitor. Cracks may occur or damage may occur.
また、エポキシ系樹脂等を外装したディップコンデンサ
の場合モ、外装樹脂の応力で、ディップコンデンサにク
ラックが発生する場合がある・いずれの場合も、コンデ
ンサを形成している磁器の機械的強度が低いほど、クラ
ックが入シやすく、容易に破損するだめ、信頼性が低く
なる。したがって、磁器の機械的強度をできるだけ増大
させることは実用上極めて重要なことである。In addition, in the case of dip capacitors coated with epoxy resin, etc., cracks may occur in the dip capacitor due to the stress of the coat resin.In either case, the mechanical strength of the porcelain that forms the capacitor is low. The more likely it is that cracks will occur, the more easily it will be damaged, and the reliability will be lower. Therefore, it is of practical importance to increase the mechanical strength of porcelain as much as possible.
ところでPb(Mgユ/2W1/2)0.− PbTi
0.系磁器組成物については既にエヌ0.エヌ、クライ
ニク、エイ。By the way, Pb (Mg Yu/2W1/2) 0. - PbTi
0. Regarding porcelain compositions, N0. N., Krajnik, A.
アイ、7グラノフスカヤN、N、Krainik an
d A、I。Ai, 7 Granovskaya N, N, Krainik an
d A, I.
Agrarovskaya(Fiziko Tverd
ogo Te1apVo、2.No、1゜pp 70〜
72* Janvara 1960)より提案があり、
また(S rxPb 1−XTI O++ ) B (
PbMg O,5W+1、sO++)b〔ただし、x=
0〜0.10. a=0.35〜0.5. bm、5〜
0.65. a + bm1 :]について、モノリシ
ックコンデンサおよびその製造方法として特開昭52−
21662号公報に開示され、また誘電体粉末組成物と
して特開昭52−21699号公報に開示されている。Agrarovskaya (Fiziko Tverd
ogo Te1apVo, 2. No, 1°pp 70~
72* Janvara 1960) has a proposal.
Also, (S rxPb 1-XTIO++ ) B (
PbMg O,5W+1,sO++)b [where x=
0-0.10. a=0.35-0.5. bm, 5~
0.65. a + bm1: ], a monolithic capacitor and its manufacturing method are disclosed in Japanese Patent Application Laid-Open No. 52-
It is disclosed in Japanese Patent Application Laid-Open No. 21662, and also disclosed as a dielectric powder composition in Japanese Patent Application Laid-Open No. 52-21699.
しかしながら、いずれも比抵抗に関する開示は全くされ
ておらず、これらの磁器組成物の実用性は不明である。However, none of them discloses any specific resistance, and the practicality of these ceramic compositions is unknown.
一方、本発明者等は既に910−950℃の温度で焼結
でき、Pb (Mgよ/2W□/2)03とPbTi0
a との2成分系からなり、これを、〔Pb(Mgエフ
2W172 )Os )ア(P b’r i Os )
1−エと表わしたときに。On the other hand, the present inventors have already been able to sinter at a temperature of 910-950℃, and Pb(Mgyo/2W□/2)03 and PbTi0
It consists of a two-component system with a, which is converted into [Pb(MgF2W172)Os)a(Pb'riOs)
When expressed as 1-e.
Xが0.65 (x≦1.00の範囲にある組成物を提
案している。この組成物は、誘電率と比抵抗の積が高く
、誘電損失の小さい優れた電気的特注を有している。We are proposing a composition in which ing.
しかしながら、上記組成物はいずれも機械的強度が低い
ため、その用途は白う狭い範囲に限定せざるを得なかっ
た。However, since all of the above compositions have low mechanical strength, their applications have had to be limited to a narrow range.
また、Pb(Mgt/zWl/z)Os PbTi(%
系を含む3成分系については、特開昭55−11101
1号においてpb(Mg□/2W□/z’)Os Pb
Ti0a Pb (Mg□/+1Nb 2/3 )0.
系が、特開昭55−117809 号におい”CPb
(Mg 1/2Wl/2)Os PbTie、 −Pb
(八Ig□/5TfL273)Os系が、それぞれ開示
されている。しかしながら、いずれも比抵抗や機械的強
度に関する開示は全くされておらず、矢張りこれらの磁
器組成物の実用性については不明である。In addition, Pb(Mgt/zWl/z)Os PbTi(%
For three-component systems including
In No. 1 pb(Mg□/2W□/z')Os Pb
Ti0a Pb (Mg□/+1Nb 2/3)0.
The system has the odor "CPb" described in JP-A No. 55-117809.
(Mg 1/2Wl/2)Os PbTie, -Pb
(8Ig□/5TfL273)Os systems are each disclosed. However, none of them discloses specific resistance or mechanical strength, and the practicality of these ceramic compositions is unclear.
マタ、本発明者等は既にPb(MjKx72Ws/2)
Os PbTiQ3Pb(In1/zNb1/z)Oi
3成分組成物を提案している。Mata, the inventors have already developed Pb (MjKx72Ws/2)
Os PbTiQ3Pb(In1/zNb1/z)Oi
A three-component composition is proposed.
この組成物は、900〜1100℃の低温領域で焼結で
き、誘電率が高く、誘電損失が小さく、室温および高温
における絶縁抵抗の値が高い優れた特性を有している。This composition can be sintered in a low temperature range of 900 to 1100°C, and has excellent properties such as high dielectric constant, low dielectric loss, and high insulation resistance at room temperature and high temperature.
しかしながら、この組成物は、機械的強度が低いため、
その用途は自ら狭い範囲に限定せざるを得なかった。However, this composition has low mechanical strength;
Its use had to be limited to a narrow range.
本発明は、以上の点にかんがみ、900〜1100℃の
低温領域で焼結でき、誘電率が高く、誘電損失が小さく
、室温および高温における絶縁抵抗の値が高し優れた電
気的特性を有し、特に機械的強度も大きい信頼性の高い
磁器組成物を提供しようとするものであり、マグネシウ
ム・タングステン酸鉛[Pb (Δig 1/2Wl/
2)Oa l)、チタン酸鉛CPbTiO3〕およびイ
ンジウム・ニオブ酸鉛[Pb (I n vzNb 1
/2)Os’lからlる3成分組成物を[Pb (Mg
、/2W□/2)03〕ゆ(PbTi0a〕ア〔Pb
(Inl/lNb+7z)On’:lzと表わしたとき
に(ただし、x”7+z=1.oO:)、この3成分組
成図において以下の組成点、
(x=0.796 、 y=0.191)、z=0.0
05 )(x=0.48 、 Y=0.12 、 z=
0.40 )(x=0.21 、 y=o、oct 、
z=0.70 )(x=0−12 、 y=o、is
、 z=0.70 )(x=0.398 、r 0.
597 、 z−0,005)を結ぶ線上、およびこの
5点に囲まれる組成範囲にある主成分組成物に、副成分
として、マンガン・ニオブ酸鉛CPb(Mn□/2Nb
□/z)Oa)を主成分に対して0.05〜5mol1
%添加含有せしめてなることを特徴とするものである。In view of the above points, the present invention can be sintered in a low temperature range of 900 to 1100°C, has a high dielectric constant, low dielectric loss, high insulation resistance at room temperature and high temperature, and has excellent electrical properties. The purpose is to provide a highly reliable porcelain composition with particularly high mechanical strength.
2) Oa l), lead titanate CPbTiO3] and indium lead niobate [Pb (I n vzNb 1
/2) A three-component composition from Os'l [Pb (Mg
, /2W□/2)03]yu(PbTi0a)a[Pb
When expressed as (Inl/lNb+7z)On':lz (however, x"7+z=1.oO:), the following composition points in this three-component composition diagram, (x=0.796, y=0.191 ), z=0.0
05 ) (x=0.48, Y=0.12, z=
0.40) (x=0.21, y=o, oct,
z=0.70) (x=0-12, y=o, is
, z=0.70) (x=0.398, r 0.
597, z-0,005) and in the composition range surrounded by these five points, as a subcomponent, manganese lead niobate CPb (Mn□/2Nb
□/z) Oa) 0.05 to 5 mol1 to the main component
%.
以下本発明を実施例により詳細に説明する。The present invention will be explained in detail below using examples.
出発原料として純度99.9−以上の酸化鉛(PbO)
、酸化マグネシウム(MgO) 、酸化タングステンC
WO,)、酸化チタン(TiOz入酸化可酸化インジウ
ムn= os )、酸化ニオブ(Nb20s )、およ
び炭酸マンガン(MnCO*)を使用し、表に示した配
合比となるように各々秤量する。次に秤量した各材料を
ボールミル中で湿式混合した後750−800℃で予焼
を行ない、この粉末をボールミルで粉砕し、日別、乾燥
後、有機ノ(インダーを入れ、整粒後プレスし、試料と
して直径16酩、厚さ約2順の円板4枚と、直径16
v+rn 、厚さ約10龍の円柱を作成した・次に試料
を空気中900〜1100℃の温度で1時間焼結し、焼
結した円板4枚の上下面に600℃で銀電極を焼付け、
デジタルLCRメーターで周波数IKHz 、電圧IV
r 、m、s、温度20℃で容情と誘電損失を測定し、
誘電率を算出した。Lead oxide (PbO) with a purity of 99.9 or higher as a starting material
, magnesium oxide (MgO), tungsten oxide C
WO, ), titanium oxide (TiOz-containing indium oxide n = os), niobium oxide (Nb20s), and manganese carbonate (MnCO*) are used, and each is weighed so as to have the compounding ratio shown in the table. Next, the weighed materials were wet-mixed in a ball mill, pre-baked at 750-800°C, and this powder was ground in a ball mill, dried, and then mixed with an organic powder (inder), sized, and then pressed. , four disks with a diameter of 16 mm and a thickness of approximately 2 mm were used as samples;
v+rn, a cylinder with a thickness of about 10 dragons was created. Next, the sample was sintered in air at a temperature of 900 to 1100°C for 1 hour, and silver electrodes were baked at 600°C on the top and bottom surfaces of the four sintered disks. ,
Frequency IKHz, voltage IV with digital LCR meter
r, m, s, measured the capacity and dielectric loss at a temperature of 20°C,
The dielectric constant was calculated.
次に超絶縁抵抗計で50Vの電圧な1分間印加して、絶
縁抵抗を温度20℃と125℃で測定し、比抵抗を算出
した。Next, a voltage of 50 V was applied for 1 minute using a super insulation resistance meter, insulation resistance was measured at temperatures of 20° C. and 125° C., and specific resistance was calculated.
機緘的性質を抗折強度で評価するため、焼結した円柱か
ら厚さO65mm 、幅2vax、長さ約13龍の矩形
なる式に従い、抗折強度τ〔p個〕をめた。ただし、l
は支点間距離、tは試料の厚み、Wは試料の幅である。In order to evaluate the mechanical properties by the bending strength, the bending strength τ [p pieces] was calculated from the sintered cylinder according to the formula of a rectangle with a thickness of 65 mm, a width of 2 vax, and a length of about 13 dragons. However, l
is the distance between the supporting points, t is the thickness of the sample, and W is the width of the sample.
電気的特性は円板試料4点の平均値、抗折強度は矩形板
試料10点の平均値よりめた。The electrical properties were determined from the average value of 4 disk samples, and the bending strength was determined from the average value of 10 rectangular plate samples.
このようにして得られた磁器の主成分(Pb (R/I
g1/2Wx/z)On )X [PbT i Os
)y (Pb (Inx/zNb 1/2)03 :)
Z (7) 配合比X + ’l * Zおよび副成
分添加量と誘電率、誘電損失、20℃および125℃に
おける比抵抗、および抗折強表に示した結果から明らか
なように、Pb (Mg +/2W1/z)Os Pb
Ti0m Pb(In1/2Nbt/z)On 3成分
系組成物に副成分としてPb (Mu 172Nb工/
2)01を特定の割合いで添加含有せしめたものは、誘
電率が1000〜3520と高く、誘電損失が0 、2
−2 、6チと小さく、比抵抗が20℃において2.I
XIQ’L8.2 Xl013Ω・儂と高く、しかも
125℃においても7.8 X 10”〜1.2 X
1013Ω・αという高い値を示し、さらに抗折強度も
980〜1240kg/a!と実用上十分高い値を示す
信頼性の高い実用性の極めて高い磁器組成物であること
がわかる。The main component of the porcelain thus obtained (Pb (R/I
g1/2Wx/z)On )X [PbT i Os
)y (Pb (Inx/zNb 1/2)03:)
Z (7) Pb ( Mg+/2W1/z)OsPb
Ti0m Pb(In1/2Nbt/z)On Pb (Mu 172Nb/
2) Those containing 01 in a specific proportion have a high dielectric constant of 1000 to 3520, and a dielectric loss of 0.2
The resistivity is as small as -2 and 6 inches, and the resistivity is 2. I
XIQ'L8.2
It shows a high value of 1013 Ω・α, and also has a bending strength of 980 to 1240 kg/a! It can be seen that this is a highly reliable and extremely practical ceramic composition that exhibits a sufficiently high value for practical use.
このように優れた特性を示す本発明の磁器組成物は焼結
温度が1100℃以下の低温であるため、積層コンデン
サの内部電極の低価格化を実現できると共に、省エネル
ギーや炉材の節約にもなるという極めて優れた効果も生
じる。図に本発明の主成分組成範囲を示す。図に示す番
号は表に示した主成分配合比の番号に対応させである。The porcelain composition of the present invention, which exhibits such excellent properties, has a low sintering temperature of 1,100°C or less, which makes it possible to reduce the cost of the internal electrodes of multilayer capacitors, and also to save energy and furnace materials. An extremely excellent effect also occurs. The figure shows the main component composition range of the present invention. The numbers shown in the figure correspond to the numbers of the main component blending ratios shown in the table.
本発明は、主成分組成物を(Pb (Mg s/2W□
/2)On ’)工[PbTiOs :)y[:Pb(
In1/2Nbt/z)Os :]zと表わしだときに
(ただし、X”y”z=1.OO)、この3成分組成図
において以下の組成点
(x=0.796 、 y=0.199 、z=0.0
05 )(x=0.48 、 y=0.12 、z=0
.40 )(X=0.21 、 y=o、o9. z=
0.70 )(x=0.12 、 3’=0.18 、
z=0.70 )(X=0.398 、y=0.597
、z=0.005 )を結ぶ線上、およびこの5点に
囲まれる組成範囲に限定され、副成分の添加含有量は主
成分に対して0.05〜5 molに限定される。なお
、主成分組成範囲において、組成点2,15を結ぶ線の
外側では高温における比抵抗が小さくなり実用的でない
。組成点15,16,7,3.2を結ぶ線の外側では誘
電率が小さくなり実用的でない。また副成分であるPb
(Mn17xNb □72) Osの添加量がQ−05
mol 1未満では抗折強度の改善効果が小さく、5m
o1%を超えると逆に抗折強度が小さくなるため実用的
でない。In the present invention, the main component composition is (Pb (Mg s/2W□
/2)On')[PbTiOs:)y[:Pb(
In1/2Nbt/z)Os :] When expressed as z (where X"y"z=1.OO), the following composition point (x=0.796, y=0. 199, z=0.0
05 ) (x=0.48, y=0.12, z=0
.. 40 ) (X=0.21, y=o, o9. z=
0.70) (x=0.12, 3'=0.18,
z=0.70) (X=0.398, y=0.597
, z=0.005) and the composition range surrounded by these five points, and the added content of the subcomponent is limited to 0.05 to 5 mol relative to the main component. In addition, in the main component composition range, the resistivity at high temperatures becomes small outside the line connecting composition points 2 and 15, making it impractical. Outside the line connecting composition points 15, 16, 7, and 3.2, the dielectric constant becomes small and is not practical. In addition, the subcomponent Pb
(Mn17xNb □72) The amount of Os added is Q-05
If the mol is less than 1, the effect of improving the bending strength is small, and the
If it exceeds 1%, the bending strength will decrease, which is not practical.
図は本発明の主成分組成範囲と実施例に示した組成点を
示す図である。The figure is a diagram showing the main component composition range of the present invention and the composition points shown in Examples.
Claims (1)
/2Wl/2)Os)、チタン酸鉛(PbTiOa)お
よびインジウム・ニオブ酸鉛(Pb(Inl/zNbt
/z)On :)からなる3成分組成物を(Pb(Mg
t/zWi/z)Ox )z(PbTiOs )y(P
b(Int/zNb 1/2)08 )zと表わしだと
きに(ただし、X + 7 + z ==1.00 )
、この3成分組成図において以下の組成点、(X=0.
796 、7=0.199 、 z=0.005 )(
x=0.48 、 y−0,12、z=0.40 )(
x=0.21 、 y=0.09 、 z=0.70
)(x=0.12 、 y=o、is 、 z=0.7
0− )(x=0.398 、 )’=0.597 、
z=0.005 )を結ぶ線上、およびこの5点に囲
まれる組成範囲にある主成分組成物に副成分としてマン
ガン・ニオブ酸鉛CPb(Mnl/zNbt/z)Os
)を主成分に対して0.05〜5 mol %添加含
有せしめてなることを特徴とする磁器組成物。(1) Magnesium lead tungstate (Pb(Mg□
/2Wl/2)Os), lead titanate (PbTiOa) and lead indium niobate (Pb(Inl/zNbt
/z)On :) A three-component composition consisting of (Pb(Mg
t/zWi/z)Ox)z(PbTiOs)y(P
b(Int/zNb 1/2)08) When expressed as z (however, X + 7 + z ==1.00)
, in this ternary composition diagram, the following composition points, (X=0.
796, 7=0.199, z=0.005) (
x=0.48, y-0,12, z=0.40) (
x=0.21, y=0.09, z=0.70
) (x=0.12, y=o, is, z=0.7
0-)(x=0.398, )'=0.597,
z=0.005) and in the composition range surrounded by these five points, manganese lead niobate CPb (Mnl/zNbt/z)Os is added as a subcomponent to the main component composition in the composition range surrounded by these five points.
) in an amount of 0.05 to 5 mol % based on the main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144781A JPS6036367A (en) | 1983-08-08 | 1983-08-08 | Ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144781A JPS6036367A (en) | 1983-08-08 | 1983-08-08 | Ceramic composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6036367A true JPS6036367A (en) | 1985-02-25 |
Family
ID=15370285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58144781A Pending JPS6036367A (en) | 1983-08-08 | 1983-08-08 | Ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6036367A (en) |
-
1983
- 1983-08-08 JP JP58144781A patent/JPS6036367A/en active Pending
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