JPS603801A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPS603801A JPS603801A JP58113084A JP11308483A JPS603801A JP S603801 A JPS603801 A JP S603801A JP 58113084 A JP58113084 A JP 58113084A JP 11308483 A JP11308483 A JP 11308483A JP S603801 A JPS603801 A JP S603801A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- mol
- present
- oxide
- dielectric porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は酸化バリウム(Bad)、酸化チタン(T i
02 ) r酸化サマリウム(Sm2o3)および酸
化ジルコニウム(Z r O2)の成分で構成される高
周波用誘電体磁器組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is applicable to barium oxide (Bad), titanium oxide (T i
02) The present invention relates to a high frequency dielectric ceramic composition composed of samarium oxide (Sm2o3) and zirconium oxide (ZrO2).
従来例の構成とその問題点
近年、波長が数センチメートル以下のマイクロ波やミリ
波(以下、これらをマイクロ波と総称する)を取扱う高
周波回路技術の進展にともないこの回路を小形化するこ
とが積極的に進められている。これまでは、この高周波
回路には空胴共振器、アンテナなどが使用されてきたが
これらの大きさはマイクロ波の波長と同程度になるため
小形化に対する障害となっていた。これを解決するため
に誘電率の大きい誘電体磁器を使用することによって波
長そのものを短縮する方法がとられてきた。Conventional configurations and their problems In recent years, with the advancement of high-frequency circuit technology that handles microwaves and millimeter waves (hereinafter collectively referred to as microwaves) with wavelengths of several centimeters or less, it has become difficult to miniaturize this circuit. It is being actively pursued. Until now, cavity resonators, antennas, and the like have been used in these high-frequency circuits, but the size of these devices is comparable to the wavelength of microwaves, which poses an obstacle to miniaturization. To solve this problem, a method has been used to shorten the wavelength itself by using dielectric ceramics with a high dielectric constant.
このような用途に適する材料としてはT iO2系のも
のがよく使用され、たとえばTio2−Zro2−8
n O2系、CaTi○s M g T iO3L a
2032 、T zo2系、最近ではB a (Zn
%T aH)o3−B a (Zn%Nb%)o3系な
どの誘電体磁器が知られている。TiO2-based materials are often used as materials suitable for such uses, such as Tio2-Zro2-8.
n O2 system, CaTi○s M g T iO3L a
2032, T zo2 series, and recently B a (Zn
Dielectric ceramics such as %TaH)o3-Ba (Zn%Nb%)o3 system are known.
しかしながら、これらの材料で誘電体共振器を作った場
合には比誘電率か30程度と低いだめ、たとえば共振周
波数が約11’GHzのX帯の誘電体共振器ではεr−
30の材料を使用した場合には直径6.6mm、厚さ2
.2mm程度の小さなユニットになるが、周波数が下っ
て2 GHz程度のUHF帯での使用となると同じε、
=30の材料のときには直径30.7mm、厚さ12.
3閣程度と形状が著しく大きくなる。ここで使用する材
料の比誘電率が80程度に大きくできればそあ大きさは
直径18.8陶、厚さ7.5胴程度と小形化することが
できるが、従来の材料ではこのような要求を満足させる
ことはできなかった。However, when a dielectric resonator is made of these materials, the dielectric constant is as low as about 30. For example, in an X-band dielectric resonator with a resonance frequency of about 11'GHz, εr-
When using material No. 30, the diameter is 6.6 mm and the thickness is 2.
.. Although it is a small unit of about 2 mm, if the frequency is lowered and used in the UHF band of about 2 GHz, the same ε,
= 30, the diameter is 30.7 mm and the thickness is 12.
The shape is significantly larger, about the size of three temples. If the dielectric constant of the material used here could be increased to about 80, the size could be reduced to about 18.8 mm in diameter and 7.5 mm thick, but conventional materials meet these requirements. could not be satisfied.
発明の目的
本発明は上記の欠点を改善するためになされたものであ
シ、比誘電率と無負荷Qの向上と共振周波数の温度係数
が安定した値をもち、用途に応じてこの温度係数を広範
囲に変化させうる誘電体磁器を提供することを目的とす
るものである。Purpose of the Invention The present invention has been made in order to improve the above-mentioned drawbacks.The present invention has been made to improve the relative dielectric constant and no-load Q, and to have a stable temperature coefficient of the resonant frequency. The purpose of this invention is to provide a dielectric ceramic that can be varied over a wide range.
発明の構成
発明者らは前記の要望をみたす材料について種々検討し
た結果、xBao−yTio −zsm203で表わさ
れる組成において、5≦X≦23(モル%)。Components of the Invention The inventors have conducted various studies on materials that meet the above requirements, and found that in the composition represented by xBao-yTio-zsm203, 5≦X≦23 (mol %).
57≦y≦82.5(モル%) 、 2.5≦2≦37
.6(モル%)、x+y−1−z=100(モル%)の
範囲にある主成分に対してS n O2が5重量−以下
添加含有されている組成の磁器がすぐれた高周波用誘電
体磁器になることを見出しだ。57≦y≦82.5 (mol%), 2.5≦2≦37
.. 6 (mol%), x + y - 1 - z = 100 (mol%) of the main component, and the porcelain has a composition in which 5 weight or less of SnO2 is added and contained, which is an excellent high frequency dielectric porcelain. That's the headline.
実施例の説明
出発原料には化学的に高純度のB a Co a +
T 102 。Description of Examples Starting materials include chemically highly purified B a Co a +
T 102.
Sm2O3およびZ r O2を所定の組成になるよう
秤量しめのうボールを備えたゴム内張90ボールミルで
純水とともに湿式混合した。この混合物をボールミルか
らとシ出して乾燥したのち、空気中において900℃の
温度で2時間仮焼した。仮焼物は純水とともに前記のボ
ールミル中で湿式粉砕した。粉砕泥しようを脱水乾燥し
たのち、粉末にバラシュのふるいを通して整粒した。整
粒粉体は金型と油圧プレスを用いて成形圧力800Vで
直径20mm、厚さ約8胴の円板に成形した。成形体は
#fJ[tD 7tv、i f @ (’#(7)9A
ft、 1m1RKi U 。Sm2O3 and ZrO2 were wet mixed with pure water to a predetermined composition in a rubber-lined 90-ball mill equipped with a weighed agate ball. This mixture was removed from the ball mill, dried, and then calcined in air at a temperature of 900° C. for 2 hours. The calcined product was wet-milled together with pure water in the ball mill described above. After dehydrating and drying the crushed slurry, the powder was sized through a Barash sieve. The sized powder was molded into a disk with a diameter of 20 mm and a thickness of about 8 cylinders at a molding pressure of 800 V using a mold and a hydraulic press. The molded body is #fJ[tD 7tv, if @ ('#(7)9A
ft, 1m1RKi U.
て空気中において1220〜1560℃の範囲内の温度
で2時間保持して焼成し、表に示す配合組成の誘電体磁
器を得た。この磁器素子を使用して誘電体共振器法によ
る測定から共振周波数と無負荷Qと比誘電率をめた。共
振周波数の温度依存性は一30℃から70℃の範囲で測
定し温度係数τfをめた。共振周波数は2〜4GHzで
あった。The mixture was then fired in air at a temperature within the range of 1,220 to 1,560° C. for 2 hours to obtain dielectric porcelain having the composition shown in the table. Using this ceramic element, the resonant frequency, no-load Q, and dielectric constant were determined by measurements using the dielectric resonator method. The temperature dependence of the resonance frequency was measured in the range of -30°C to 70°C, and the temperature coefficient τf was determined. The resonant frequency was 2-4 GHz.
これらの得られた実験結果を表に示す。なお、表におい
て■印した試料は本発明の範囲外の比較例であり、これ
以外の試料が本発明の範囲内の実施例である。The experimental results obtained are shown in the table. Note that the samples marked with ■ in the table are comparative examples outside the scope of the present invention, and the other samples are examples within the scope of the present invention.
(以下余白)
表から明らかなように、本発明の範囲内の誘電体磁器は
比誘電率を大きく保ちながら無負荷Qを大きくすること
ができる。まだ、安定した共振周波数の温度特性を示す
ので本発明の誘電体磁器は発振器や共振器などの温度依
存性を安定化するのに有用であり、さらに比誘電率が大
きいことからUHF帯での使用に適し、小形で高性能の
電子回路部品を作ることができる。(The following is a blank space) As is clear from the table, the dielectric ceramic within the scope of the present invention can increase the no-load Q while maintaining a high relative dielectric constant. However, since the dielectric ceramic of the present invention exhibits stable temperature characteristics of the resonant frequency, it is useful for stabilizing the temperature dependence of oscillators and resonators, and furthermore, because of its large dielectric constant, it is suitable for use in the UHF band. It can be used to create small, high-performance electronic circuit components.
主成分組成の範囲を限定した理由を説明すると、BaO
量(x)が23モモル係シ多かったりあるいはT 10
2量(y)が57モモル係り少なかったりあるいはSm
2O3量(z)が2.6モル係より少なかったりすると
磁器の焼結が困難となり、無負荷Qが低下して測定不能
となるために、本発明の範囲から除かれる。まだ、Xが
5モル係より少なかったりあるいは2が37.6モル係
より多かったりすると磁器の焼結が不安定となるととも
に無負荷Qが低下して測定不能となり、また、yが82
.5モル 1チよシ多くなると、磁器の焼結が不安定と
なるとともに温度特性の変化が著しく大きくなるために
、本発明の範囲から除かれる。To explain the reason for limiting the range of the main component composition, BaO
The amount (x) is 23 momoles more or T 10
2 amount (y) is less than 57 momoles or Sm
If the amount of 2O3 (z) is less than 2.6 molar ratio, it becomes difficult to sinter the porcelain, and the no-load Q decreases, making it impossible to measure, and is therefore excluded from the scope of the present invention. However, if X is less than 5 moles or 2 is more than 37.6 moles, the sintering of the porcelain becomes unstable and the no-load Q decreases, making it impossible to measure.
.. If the amount is more than 5 mol or more, the sintering of the porcelain becomes unstable and the temperature characteristics change significantly, so it is excluded from the scope of the present invention.
また、副成分のZ r O2の添加量については、添加
量の増加とともに磁器の焼結温度を低下することができ
ると吉もに無負荷Qを大きくすることができ、また温度
特性を変化させることができるが、6重量倦を越えて添
加すると比誘電率と無負荷。In addition, regarding the amount of Z r O2 added as a subcomponent, if the sintering temperature of porcelain can be lowered as the amount added increases, the no-load Q can be increased, and the temperature characteristics can also be changed. However, if more than 6% by weight is added, the relative permittivity and no load will increase.
の低下が著しくなるために本発明の範囲から除かれる。This is excluded from the scope of the present invention because the decrease in
発明の効果
本発明の誘電体磁器組成物はマイクロ波周波数帯におい
て比誘電率が大きく、無負荷。が大きく、さらに共振周
波数の温度係数が安定した値を示すので発振器や共振器
などの温度依存性を安定化するのに有用である。また、
比誘電率が大きいことからUHF帯での使用に適し、l
JS形で高性能の電子回路部品を作ることができる。さ
らに、材料の組成を変えることによって所望の共振周波
数の温度係数を選ら′ぶことができるので、誘電体共振
器を組立てたとき周囲の金属板による温度特性におよぼ
す影響をなくする温度補償作用をもたせることができる
。また、本発明の誘電体磁器組成物は誘電体共振器のみ
ならず、マイクロ波用の基板や誘電体調整棒などの用途
にも有用な素材を提供することができ、工業的に利用価
値の大きいものである。Effects of the Invention The dielectric ceramic composition of the present invention has a large dielectric constant in the microwave frequency band and is unloaded. is large, and the temperature coefficient of the resonance frequency exhibits a stable value, so it is useful for stabilizing the temperature dependence of oscillators and resonators. Also,
Due to its large dielectric constant, it is suitable for use in the UHF band.
High-performance electronic circuit components can be made using the JS type. Furthermore, the temperature coefficient of the desired resonance frequency can be selected by changing the composition of the material, so when the dielectric resonator is assembled, a temperature compensation effect that eliminates the influence of the surrounding metal plates on the temperature characteristics can be achieved. It can be made to stand. In addition, the dielectric ceramic composition of the present invention can provide a material useful not only for dielectric resonators but also for microwave substrates, dielectric adjustment rods, etc., and has industrial utility value. It's big.
Claims (1)
からなる誘電体磁器で、その主成分組成式をx B a
Oy T iO22S l111203と表わしだと
き、x、y、zが5≦X≦23(モル%)、67≦y≦
82.5(モル%)、2.5≦Z≦37.6(モル%)
。 x 十y 十z = 100 (モル%)の範囲にあシ
、この主成分に対してZ r O2が6重量φ以下添加
含有されていることを特徴とする誘電体磁器組成物。[Claims] Dielectric porcelain consisting of barium oxide, titanium oxide, samarium oxide, and tin oxide, whose main component composition formula is x B a
When expressed as Oy T iO22S l111203, x, y, z are 5≦X≦23 (mol%), 67≦y≦
82.5 (mol%), 2.5≦Z≦37.6 (mol%)
. A dielectric ceramic composition characterized in that Z r O2 is added in an amount of 6 weight φ or less based on the main component in the range of x 10 y 10 z = 100 (mol %).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113084A JPS603801A (en) | 1983-06-22 | 1983-06-22 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113084A JPS603801A (en) | 1983-06-22 | 1983-06-22 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS603801A true JPS603801A (en) | 1985-01-10 |
| JPS6348132B2 JPS6348132B2 (en) | 1988-09-27 |
Family
ID=14603072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58113084A Granted JPS603801A (en) | 1983-06-22 | 1983-06-22 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS603801A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993002979A1 (en) * | 1991-08-09 | 1993-02-18 | Tdk Corporation | Dielectric material for high frequency and resonator made thereof, and manufacture thereof |
| EP1095918A2 (en) | 1999-10-28 | 2001-05-02 | Murata Manufacturing Co., Ltd. | High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125499A (en) * | 1978-03-23 | 1979-09-28 | Nichicon Capacitor Ltd | Reduction type semiconductor porcelain composition |
| JPS5715309A (en) * | 1980-07-01 | 1982-01-26 | Matsushita Electric Industrial Co Ltd | Dielectric porcelain composition |
-
1983
- 1983-06-22 JP JP58113084A patent/JPS603801A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125499A (en) * | 1978-03-23 | 1979-09-28 | Nichicon Capacitor Ltd | Reduction type semiconductor porcelain composition |
| JPS5715309A (en) * | 1980-07-01 | 1982-01-26 | Matsushita Electric Industrial Co Ltd | Dielectric porcelain composition |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993002979A1 (en) * | 1991-08-09 | 1993-02-18 | Tdk Corporation | Dielectric material for high frequency and resonator made thereof, and manufacture thereof |
| US5431955A (en) * | 1991-08-09 | 1995-07-11 | Tdk Corporation | High frequency conductive material and resonator and method for making |
| EP1095918A2 (en) | 1999-10-28 | 2001-05-02 | Murata Manufacturing Co., Ltd. | High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6348132B2 (en) | 1988-09-27 |
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