JPS6038850A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the fall-off of a wiring reaching to a conductor from a semiconductor element and the increase of the electrical resistance of the wiring by constituting a conductor layer for the wiring by a first conductor layer having strong adhesive properties to an insulating layer and a second conductor layer, which is formed on the first conductor layer and mainly comprises aluminum. CONSTITUTION:Conductor layers 4 for wirings consist of a conductor layer 11 composed of a polysilicon layer or a metallic layer having strong adhesive properties to an insulating layer 2 and a conductor layer 12 composed of aluminum or a material mainly comprising aluminum, and a conductor 5 consisting of gold or a material mainly comprising gold is connected to the conductor layer 12. Consequently, even when a hole is formed in the conductor layer 12 by giving heat, the state in which the conductor layers 4 for the wirings are connected to the conductor 5 is kept because the conductor layer 11 is shaped, and the electrical resistance of the wirings reaching to the conductor 5 through the conductor layers 4 for the wirings from a semiconductor element does not increase. There is possibility of which the conductor 5 falls off together with one part of the conductor layers 4 for the wirings because the conductor layer 11 has strong adhesive properties to the insulating layer 2 and a section between the conductor layer 11 and the conductor layer 12 has solid adhesion.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides an insulating layer on which a semiconductor element 4 is formed and an insulating layer connected to the semiconductor element with an insulating layer layer of A conductor layer for wiring is formed, and a conductor wire made of gold or gold as a main component is connected to the butt part of the threat layer for wiring.
1 force 1 tool 1. Involved in improving u and l.

As shown in FIG. 1, this conventional J, 4i, and half-ink mounting is performed by applying, for example, S! Insulation diagram 2 consisting of 0+
is formed, and the insulation F! 21-, a wiring conductor layer 4 connected to the ``1'' conductor element and extending beyond the 11 butt parts 3 is formed, and a gold metal layer is formed on paras 1 to 3 of each wiring conductor Fj/1. This is a conductive wire 5 made of a material containing gold as one component.
However, it has a structure that is C-connected by bonding. <1i1j, 61, one color j family protective film.

In this case, nine layers for wiring are made of 4 μm aluminum.

However, this J, Una! 21' to the right of 111
5! In the case of a j-rest device, the conductor 5 is attached to the butt part 3 of the dovetail 4.
If heat treatment is performed after heating, the conductive pit
The gold of No. 5 reacts with the aluminum of the wiring conductor layer 4 to form alloys such as ALIAl+ and Δu2 Δ1. ”1 No. 7 indicates 1
'J: Sea urchins had the disadvantage of forming pores and increasing electrical resistance.

Moreover, the wiring conductor layer 4 is made of aluminum! Therefore, the contact between the wiring conductor layer 4 and the insulating layer 2 is weak, so that the conductive wire 5 is easily filled with Ml from the insulating layer 2, especially when the holes 7 are formed as described above. There was a drawback that the conductor 5 fell onto a part of the wiring conductor layer 4.

J, the present invention is a new M4D1 without the above-mentioned drawbacks.
This will become clear from what follows.

FIG. 2 shows an example of a semiconductor device i4 according to the present invention.
Corresponding parts in each figure are given the same reference numerals for details! Although the details are omitted, in the configuration shown in FIG. (11 layers 11 and a conductor layer 11 formed on the conductive layer 11) consisting of aluminum or aluminum as a main component. 1, except that the conductive wire 5 is connected in part 3 to the rosette 1 on the conductor layer 12.

This is an example of the semiconductor 1411 (1) according to the present invention.
It is four generations.

According to such a configuration, the wiring conductor layer 4 is the same as the conductor layer 1.
It consists of 1 and 12, and is the guide! 5 is connected to the conductor layer 12, so even if a hole is formed in the conductor layer 12 as in the case shown in FIG. Since it has the conductor layer 11, the state in which the wiring conductor Fi4 is connected to the conductor wire 5 is not changed, and the core layer 11 has a strongly adhesive horn between the insulating layer 2. Therefore, peeling as in the case of FIG. 1 does not result in 1.

Therefore, as shown in FIG. 4, the characteristic 1η, which is 1 less than the semiconductor device shown in FIG. 1, is reduced by 1.

In addition, when d3 is placed in the upper jho, the right Iho 12 is the 11th layer, but as shown in Figure 3, the 2nd layer 1
3 and 14 t) C cut. In this case, a total of 13 and σ
14 may be Ti and pt, respectively.

That immortal, 4~ The spirit of light is l1ii! Various modifications and changes may be made without further ado.

[Brief explanation of drawings]

Fig. 7A1 is a view of the conventional Hanfutai/boring: ζ°'i on the small 111 line n'i 1lJi. FIGS. 2 and 3 are sectional views showing a half-section device according to the present invention. Applicant: Kazuo Wakasugi, Commissioner of the Japan Patent Office, 1. Indication of the case: Japanese Patent Application No. 147085/1985 2, Name of the invention: Semiconductor device 3 , What is the relationship between the person making the amendment and the case? Patent Applicant: Yuu 1-1-6 Uchisaiwai-cho, Chiyo IJ'1-ku, Tokyo Name (422) Nippon Telegraph and Telephone Public Corporation Representative Tsune Shinto 4 Address of agent: 102 Tokyo 5-7 Kojimachi, Chiyoda-ku, Miyako
Hidekazu Kioicho TBR No. 820 5, Date of amendment order November 29, 1980 6, Number of inventions increased by J: None 7, Subject of amendment Mei I
Column B of the brief description of the drawings in Book II, contents of amendment (1) Box 5, line 1, line 1, page 5 of the specification...This is a line RG 1 view. ”, then add the following. ``Figure 4 is a diagram that minimizes changes in the power supply voltage margin of the semiconductor device shown in Figure 1 and the semiconductor device of the present invention shown in Figure 2.'' The above procedure Masashi Neyama, Showa year, month, day, Japan Patent Office Commissioner Kazuo Wakasugi 1. Indication of the case: Japanese Patent Application No. 58-147085 2. Title of the invention: Semiconductor device 3. Person making the amendment: Relationship: Patent applicant Address: 1-1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo Name:
(422) Nippon Telegraph and Telephone Public Corporation Representative Tsune Shinfuji 4, Agent address 5-7 Koji+11J, Chiyo 11-ku, Tokyo 102 Hidekazu Kioicho TBR 820-5, ? 1l
Weight of iiiE command Voluntary amendment 6.7 + Number of inventions increased by li correction None 7, Target of amendment Full text of specification and drawings 8, Contents of amendment As shown in the attached sheet Details E, + <Full text i''stop> 1 , Title of the invention Semiconductor device {1''Z2, Claims Scope of Claims An insulating layer is formed on the semiconductors J and L forming the semiconductor element, and on the insulating layer the above-mentioned semiconductor), A conductor layer for wiring is formed on the right side of the butt part, and a conductive wire made of 41 stones whose main components are gold and moss gold is connected to the parts 1 to 1 of the conductor layer for wiring. (3) The wiring conductor layer is made of a polysilicon film having a strong adhesion to the above-mentioned In and In. A first conductor layer made of metal scrap, and an aluminum layer formed on the first layer are made of a material containing aluminum as a main component. Second
29 conductor layers, and the conductor wire is connected to a portion of the rosette 1 of the second conductor layer. 3. Detailed Description of the Invention The present invention provides an insulating layer formed on an element plate forming a semiconductor cable, which is connected to a semiconductor element on the insulating layer, and has a butt part. The present invention relates to an improvement of a semiconductor device having a 4M structure in which a wiring conductor layer is formed and a conductive wire made of gold or a material containing gold as a main component is connected to a butt portion of the wiring conductor layer. The semiconductor device is shown in FIG. 1, in which an insulating layer 2 made of, for example, S!0+ is formed on a semiconducting layer forming a semiconductor element (not shown).
On the insulating layer 2, a wiring conductor layer 4 is formed which is connected to a semiconductor cable (not shown) and which extends over a portion 3 of the parallax 1,
A conductive wire 5 made of gold or a material containing gold as a main component is connected to the parts 1 to 3 of the wiring conductor layer 4 by bonding. Note that 6 is an insulating protective film. In this case, the wiring conductor layer 4 is made of a single layer of aluminum. The above is the configuration of the conventional semiconductor device. In the case of a semiconductor device having such a {j4 configuration, the conducting wire 5
A. 114 with J+
4'.i j
'Turn right on J. In addition, since the wiring conductor layer 4 is made of aluminum (
The buffs 1 to 3 have the characteristic that a good connection relationship can be obtained between 13C and y9m5, which is made of gold or a monthly interest mainly composed of gold. However, in the case of ``1''-conductor equipment shown in Figure 1,
After connecting the conductive wire 5 to the parts 1 and 3 of the wiring conductor layer 4 by bonding, it gets hot! In the case that the wiring conductor layer 4 has the gold of the core wire 5 and the wiring conductor R
? i/l of aluminum reacts to form All AI
r, Au + 8l 13tU) alloy is formed,
As a result, holes are formed in the wiring conductor layer 4 as shown by No. 13 7, and therefore the electrical 11 of the wiring from the 1' conductor element to the C conductor 5 via the wiring conductor layer 4 is generated. In addition, in the case of the conventional semiconductor device shown in FIG. 1, since the wiring conductor layer 4 is made of aluminum 4
(For wiring)
The nine-body layer 4 is easily peeled off from the insulating layer 2. 'For this reason, if the above-mentioned holes 7 are formed in the wiring conductor layer 4, there is a drawback that the conductor 5 may fall off together with a part of the wiring conductor layer 4. Ta. Furthermore, in the case of the conventional semiconductor device shown in Fig. 1, it has the following drawbacks: Was. Accordingly, the present invention aims to propose a novel semiconductor device free from the above-mentioned drawbacks, which will become clear from the following section. FIG. 2 shows an example of a semiconductor device according to the present invention. In FIG. 2, parts J3 and corresponding parts to those in FIG. The semiconductor device according to the present invention has the following characteristics sr4.
I1! has the same configuration as in Figure 1, except for . Jru. That is, instead of the wiring conductor Fi4 being a single layer of aluminum, it is made of a polysilicon layer that has strong adhesion to the insulating layer 2, or tantalum, chromium,
[A conductor layer made of a metal layer such as livedenum or tungsten that has strong adhesion to the insulating layer 2 and has good heat resistance.'
11, and a conductor layer 12 formed on the conductor layer 11 and made of aluminum or aluminum as a main component. However, if the conductor wire 5, which is gold or an IC whose main component is gold, is made of a material whose main component is aluminum, such as aluminum? It is connected to the butt part 3 on i12. The above is one example of the structure of the present device according to the present invention. According to this structure, the conductive wire 5 is made of gold or gold, as in the case of the conventional semiconductor device shown in FIG. Since the main component is 4.M, the conductor wire 141!l is removed as in the case of the conventional semiconductor device shown in FIG. , the conductor 5 is attached to the butt part 3 of the wiring conductor layer 4
Since the conductor layer 12 of the wiring conductor layer 4 to be directly connected is made of aluminum or a material containing aluminum as a main component, the conductor layer 12 of the wiring conductor layer 4 is made of aluminum or a material containing aluminum as a main component. Or, between C1 and the conducting wire 5 made of a material whose main component is gold, as shown in FIG. Jru. However, in the case of the semiconductor device according to the present invention as shown in FIG. Conductor layer 11 made of metal layer such as tungsten
The conductor layer 12 is made of aluminum or a material containing aluminum as a main component, and the conducting wire 5 is made of aluminum or a material containing aluminum as a main component. Since it is connected to the conductor layer 12, even if holes are formed in the conductor layer 12 by applying heat after connecting the conductor Fd5 to the conductor layer 12, as in the case of FIG. ζ (body layer 11
Since the wiring conductor layer 4 remains connected to the conductive wire 5, there is no change.
Conductive FA5 from the sitting 9-body element via wiring J1100 layer 4
As shown in FIG. 1, the electrical resistance of the wiring that leads to J does not increase as much as in the case of the conventional semiconductor device V1.
I have the following characteristics. Further, the core layer 11 of the wiring core layer 4 is in contact with the insulating layer 2, and the conductor layer 11 of C is a polysilicon layer that has strong adhesion to the insulation layer 12, or is made of tantalum, Ri1
1, molybdenum, tungsten, and other metal layers, the adhesion between the conductor layer 11 and the insulating layer 2 is as shown in FIG. /
Therefore, the conductor layer 11 peels off from the insulating layer 2. II L is difficult. Of course,
There is a stronger contact between the conductor layer 11 and the central body layer 12 than between the conductor layer 11 and the insulating layer 2, and at this point, the conductor II'1712 is peeled off from the conductor layer 11. ! l[I. Therefore, as described above, the conductor layer 12 of the wiring conductor layer 4 has 3? Even if the hole is formed, there is no risk that the conductive wire 5 may fall onto some parts of the wiring conductor layer 4, as in the case of the conventional semiconductor device shown in FIG. This characteristic is true. Furthermore, according to the semiconductor device according to the present invention, the upper
Compared to the conventional semiconductor device shown in FIG. 1, the semiconductor device has the characteristics of being able to operate stably over a long period of time with desired characteristics. In contrast, the conventional semiconductor device shown in FIG. 1 (insulating layer 2/,
A semiconductor device according to the invention (the insulating layer 2 is made of 5iO7, the conductor layer 11 of the wiring conductor layer 4 is a polysilicon layer, and the conductor layer 12 is an aluminum layer) as shown in FIG. 3) at a temperature of 260℃.
80011, -In the case of the conventional semiconductor device, a failure occurred in two of the five semiconductor devices, but in the case of the semiconductor device according to the present invention, a failure occurred in all eight of the semiconductor devices. There wasn't. In addition, the conventional one'1' conductor device (insulating layer 2
8102) and a semiconductor device according to the present invention shown in FIG. ) and 5 pieces at a temperature of 290℃ C・,
When I operated 'I El OOIl, '+ Itil, in the case of a conventional semiconductor device, 111 out of 5! J
In the case of the semiconductor device according to the present invention, no failure occurred among the five components.Furthermore, FIG. Insulating layer 2 is S
fO+), the insulation tA2 of the semiconductor device according to the present invention as shown in FIG. ), the electrical resistance of the wiring from the semiconductor element to the -C conductor 5 via the wiring conductor layer 4 is sealed in a 16-conductor device. When measuring the time change in the margin of the power supply voltage, in the case of a conventional semiconductor device, as shown by the dotted line in FIG.
) In the semiconductor device according to the present invention, as shown by the solid line in FIG. As shown in FIG. It is clear that it has the feature of stable operation.
As shown in FIG. 3, the conductor layer 13 on the insulating layer 2 side and the ICM formed thereon are
The J body layer 1402 and the J-layer can also be separated by U'. in this case,
The conductor layer 13 has l having strong adhesion to the insulating layer 2.
−i layer, Ml, and Y! The body layer 14 is made of aluminum having a property of preventing a material mainly composed of aluminum from the conductor layer 12 from diffusing toward the conductor layer 13 side. In addition, various modifications and changes may be made without departing from the spirit of the invention. 4. Brief description of the drawings Figure 1 shows a conventional semiconductor device.
FIG. FIGS. 2 and 3 are cross-sectional views showing an embodiment of a semiconductor device according to the present invention. FIG. 4 shows a conventional conductor arrangement shown in FIG. 1 and a semiconductor device according to Ichiki's invention shown in FIG. 2. Figure r'' shows the change in voltage margin over time. 1... Semiconductor substrate 2
・・・・・・・・・・・・・・・Insulating layer 3...
・・・・・・・・・・・・・・・Rose 1 Part 4...
・・・・・・・・・・・・N-body layer 5 for wiring
・・・・・・・・・・・・・・・Conductor 6・・・・・・・・・
・・・・・・・・・Insulation 1+A: Protective film+1.12.
13.14

Claims (1)

[Scope of Claims] An insulating layer is formed on a semiconductor substrate forming a semiconductor element, and on the insulating layer there is provided a wiring wire connected to the above-mentioned half-and-half element, and extending to the right side of the para-I section. A layer is formed, and a shrine 1 containing gold as a main component is formed on the butt part of the wiring conductor layer.
In a semiconductor device having a 1η structure, the wiring layer is made of a polysilicon layer, or a metal layer having strong adhesion to the insulating layer. a first core layer formed on the first core layer, and a second conductor layer formed on the first core layer and made of aluminum or mainly composed of aluminum; A semiconductor device characterized in that a second η body layer is connected to the butt portion.