JPS6038881A - 半導体不揮発性メモリ - Google Patents

半導体不揮発性メモリ

Info

Publication number
JPS6038881A
JPS6038881A JP58147106A JP14710683A JPS6038881A JP S6038881 A JPS6038881 A JP S6038881A JP 58147106 A JP58147106 A JP 58147106A JP 14710683 A JP14710683 A JP 14710683A JP S6038881 A JPS6038881 A JP S6038881A
Authority
JP
Japan
Prior art keywords
region
injection
gate electrode
semiconductor
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58147106A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481347B2 (2
Inventor
Yutaka Hayashi
豊 林
Masaaki Kamiya
昌明 神谷
Yoshikazu Kojima
芳和 小島
Kojiro Tanaka
小次郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Seiko Instruments Inc
Seiko Instruments and Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Seiko Instruments Inc, Seiko Instruments and Electronics Ltd filed Critical Agency of Industrial Science and Technology
Priority to JP58147106A priority Critical patent/JPS6038881A/ja
Publication of JPS6038881A publication Critical patent/JPS6038881A/ja
Publication of JPH0481347B2 publication Critical patent/JPH0481347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP58147106A 1983-08-11 1983-08-11 半導体不揮発性メモリ Granted JPS6038881A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147106A JPS6038881A (ja) 1983-08-11 1983-08-11 半導体不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147106A JPS6038881A (ja) 1983-08-11 1983-08-11 半導体不揮発性メモリ

Publications (2)

Publication Number Publication Date
JPS6038881A true JPS6038881A (ja) 1985-02-28
JPH0481347B2 JPH0481347B2 (2) 1992-12-22

Family

ID=15422647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147106A Granted JPS6038881A (ja) 1983-08-11 1983-08-11 半導体不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS6038881A (2)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419801A (en) * 1987-07-15 1989-01-23 Dx Antenna Polarized wave discriminator
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
WO1996018998A1 (en) * 1994-12-16 1996-06-20 National Semiconductor Corporation A method for programming a single eprom or flash memory cell to store multiple levels of data
WO1996031883A1 (en) * 1995-04-06 1996-10-10 National Semiconductor Corporation A method for programming an amg eprom or flash memory when cells of the array are formed to store multiple bits of data
US5808937A (en) * 1994-12-16 1998-09-15 National Semiconductor Corporation Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges
US6051465A (en) * 1997-07-30 2000-04-18 Matsushita Electronics Corporation Method for fabricating nonvolatile semiconductor memory device
US6051860A (en) * 1998-01-16 2000-04-18 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
US6121655A (en) * 1997-12-30 2000-09-19 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
US6147379A (en) * 1998-04-13 2000-11-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2007158196A (ja) * 2005-12-07 2007-06-21 Sharp Corp 不揮発性半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353983A (en) * 1976-10-27 1978-05-16 Hitachi Ltd Semiconductor non-volatile memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353983A (en) * 1976-10-27 1978-05-16 Hitachi Ltd Semiconductor non-volatile memory device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419801A (en) * 1987-07-15 1989-01-23 Dx Antenna Polarized wave discriminator
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
US5617351A (en) * 1992-03-12 1997-04-01 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
WO1996018998A1 (en) * 1994-12-16 1996-06-20 National Semiconductor Corporation A method for programming a single eprom or flash memory cell to store multiple levels of data
US5594685A (en) * 1994-12-16 1997-01-14 National Semiconductor Corporation Method for programming a single EPROM or flash memory cell to store multiple bits of data that utilizes a punchthrough current
US5808937A (en) * 1994-12-16 1998-09-15 National Semiconductor Corporation Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges
WO1996031883A1 (en) * 1995-04-06 1996-10-10 National Semiconductor Corporation A method for programming an amg eprom or flash memory when cells of the array are formed to store multiple bits of data
US6051465A (en) * 1997-07-30 2000-04-18 Matsushita Electronics Corporation Method for fabricating nonvolatile semiconductor memory device
US6121655A (en) * 1997-12-30 2000-09-19 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
US6380585B1 (en) 1997-12-30 2002-04-30 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor device capable of increased electron injection efficiency
US6051860A (en) * 1998-01-16 2000-04-18 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
US6358799B2 (en) 1998-01-16 2002-03-19 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device
US6147379A (en) * 1998-04-13 2000-11-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2007158196A (ja) * 2005-12-07 2007-06-21 Sharp Corp 不揮発性半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0481347B2 (2) 1992-12-22

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