JPS603A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPS603A JPS603A JP10824983A JP10824983A JPS603A JP S603 A JPS603 A JP S603A JP 10824983 A JP10824983 A JP 10824983A JP 10824983 A JP10824983 A JP 10824983A JP S603 A JPS603 A JP S603A
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- Japan
- Prior art keywords
- temperature
- dielectric constant
- mol
- dielectric
- composition
- Prior art date
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は誘電体磁器組成物に係り9%に高周波用または
温度補償用として好適な誘電体磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dielectric ceramic composition, and relates to a dielectric ceramic composition suitable for use in 9% high frequency applications or temperature compensation applications.
例えば温度補償用7ii器コンデンサ等に用いられる誘
電体磁器組成物としては、温度係数が比較的小さく、か
つ誘電率およびQが高く、シかもこれらの温度依存性が
少ないこと、つまり容量変化率をもたないことが望まれ
る。そして従来の此種の誘電体磁器組成物としては、
5rTi03 、 CaTi01 。For example, dielectric ceramic compositions used in 7II capacitors for temperature compensation, etc. have a relatively small temperature coefficient, a high dielectric constant and a high Q, and have a low temperature dependence, that is, a low rate of change in capacitance. It is hoped that it will not last. And, as a conventional dielectric ceramic composition of this kind,
5rTi03, CaTi01.
MgTiO3、La203 * 2 TiO2、CaZ
rO2等を主成分とするものが知られている。これらの
組成物によれば。MgTiO3, La203*2 TiO2, CaZ
Those whose main component is rO2 etc. are known. According to these compositions.
誘電率が10〜300.温度係数が+100〜−300
0X 10−’/”Cの範囲のものが得られている仁と
がこれまた公知でおる。The dielectric constant is 10-300. Temperature coefficient is +100 to -300
It is also known that the range of 0.times.10-'/''C has been obtained.
しかしこれらの従来の誘電体磁器組成物は、常温での誘
電率と温度係数の関係が、誘電率が太きくなる程温度係
数の値も大きくなり、逆に温度係数の値を小さくすると
必然的に誘電率も小さくなるという関係にうった。この
ため従来の誘電体磁器組成物では温度係数が小さくて、
誘電率の太きいものを得ることができなかった。However, in these conventional dielectric ceramic compositions, the relationship between the dielectric constant and the temperature coefficient at room temperature is such that the thicker the dielectric constant, the larger the temperature coefficient, and vice versa. The relationship is that the dielectric constant also decreases. For this reason, conventional dielectric ceramic compositions have a small temperature coefficient,
It was not possible to obtain a material with a large dielectric constant.
また一般の温度補償用磁器コンデンサや高周波回路用の
誘電体共振器等では、その誘電体磁器組成物として、温
度係数が小さく誘電率およびQが高く、誘電率が温度依
存性を持たないことが望まれる。従来はこのような誘電
体磁器組成物としてTiO2系のもの2例えば’1’i
02− ZrO2−5n02系tCaTi03−MgT
i03− La203 @ 2 TiO2系等の磁器組
成物を使用していた。しかしながらこれらの組成物で誘
電体共振器やコンデンサを作った場合、温度係数がo
(P PM/”c )の温度特性の良いところでは誘電
率が408度と非常に小さくなるという欠点がらり、温
度係数が小さく、誘電率の温度依存性が直線性をもち、
誘電率の高いものを得ることが困難であった。In addition, in general temperature-compensating ceramic capacitors and dielectric resonators for high-frequency circuits, the dielectric ceramic composition has a small temperature coefficient, a high dielectric constant and a high Q, and the dielectric constant has no temperature dependence. desired. Conventionally, such dielectric ceramic compositions have been TiO2-based 2, for example '1'i.
02- ZrO2-5n02-based tCaTi03-MgT
i03-La203@2 A ceramic composition such as TiO2 type was used. However, when dielectric resonators and capacitors are made with these compositions, the temperature coefficient is
(P PM/"c) has the disadvantage that the dielectric constant is very small at 408 degrees in the area with good temperature characteristics, but the temperature coefficient is small and the temperature dependence of the dielectric constant is linear,
It was difficult to obtain a material with a high dielectric constant.
またBaO・xTiO2系組成物として、Xが2〜9の
組成物は温度補償用としては公知でおるが、依然として
前述の問題点は解決されていない。Further, as BaO.xTiO2 compositions, compositions in which X is 2 to 9 are known for use in temperature compensation, but the above-mentioned problems have not yet been solved.
本発明は、誘電率およびQが太きく、シかも温度係数が
小さく、誘電率の温度特性の直線性が良好で、かつ容量
変化率の小さい誘電体磁器を得ることができなかったと
い〉従来の問題点を解決するものである。The present invention has the advantage that it was not possible to obtain a dielectric ceramic having a large dielectric constant and Q, a small temperature coefficient, good linearity of the temperature characteristic of the permittivity, and a small rate of change in capacitance. It is a solution to a problem.
上記の如き問題点を解決するために2本発明では、 B
aO* x Ti02−La2O3m 2 TJO2系
肋電体磁器組成物(但しx−3〜6)であって、酸化物
に換算して’rto2(57,2モル%〜75.0 モ
ル% 、 Ba01.56 モル%〜7.69 モ/’
% t La20318.75 % ル%〜51.1
5 モル%の組成範囲にしたことを特徴とするものであ
る。In order to solve the above-mentioned problems, two aspects of the present invention are provided.B
a0* 56 mol%~7.69 mo/'
%tLa20318.75%%~51.1
It is characterized by having a composition range of 5 mol%.
このような組成範囲にすることにより9本発明の目的と
する。誘電率およびQの大きな、温度係数が小さく、誘
電率の温度特性の直線性が良い誘電体磁器組成物を得る
ことが判明した。By setting the composition within such a range, the object of the present invention can be achieved. It has been found that a dielectric ceramic composition can be obtained that has a large dielectric constant and Q, a small temperature coefficient, and a good linearity of the temperature characteristic of the dielectric constant.
本発明を実施例にもとづき詳細に説明する。 The present invention will be explained in detail based on examples.
まずTiO2およびBaC0,を、酸化物に換算してT
iO2は67.2%h%〜75.0 % ル% 、 B
aOは 1.56モ/L−%〜7.69モル%*Lax
Osは18.755モルチル3.15モル−〇範囲内の
組成比になるように配合し、これを1100”C〜12
00’C,2時間の条件で仮焼成した後、100μm以
下の粒径となるように粗粉砕して、その後ボールミルに
よって湿式粉砕をおこない、これを濾過、乾燥し、それ
から粘結剤を加えてこれを16.57Ellφxo、6
mtの円板状に成形し、1280℃〜1400℃の温度
で2時間焼成した。なお上記円板状に成形する際、6ト
ン/dの圧力を加えた。このようにして得られた誘電体
磁器の両面に銀電極を800℃で焼付けてコンデンサと
した後、その誘電率とQ値および温度係数T、C(P
PM/’C)を測定した。ここで誘電率とQは1KHz
の周波数でキャパシタンス−ブリッジを用いて測定し
た。また温度係数T、Cは、温度20℃における誘電率
ε2oの値を基準にして次式により算出した。First, TiO2 and BaC0, are converted into oxides and T
iO2 is 67.2%h%~75.0%le%, B
aO is 1.56 mo/L-% to 7.69 mole%*Lax
Os is blended so that the composition ratio is within the range of 18.755 mol 3.15 mol - ○, and this is
After pre-calcining at 00'C for 2 hours, it is coarsely ground to a particle size of 100μm or less, then wet-pulverized using a ball mill, filtered and dried, and then a binder is added. This is 16.57Ellφxo, 6
It was molded into a disk shape of mt and baked at a temperature of 1280°C to 1400°C for 2 hours. Note that when molding into the disk shape, a pressure of 6 tons/d was applied. Silver electrodes were baked on both sides of the dielectric porcelain thus obtained at 800°C to form a capacitor, and the dielectric constant, Q value, and temperature coefficients T, C (P
PM/'C) was measured. Here, the dielectric constant and Q are 1KHz
Measurements were made using a capacitance bridge at a frequency of . Further, the temperature coefficients T and C were calculated using the following equations based on the value of the dielectric constant ε2o at a temperature of 20°C.
T、C= (εT−ε2o) / ε2g(T 20
) (ppm/’C)但し ε、はT ”Cにおける誘
電率
ε2゜は20℃における誘電率
Tは測定温度(室温)である。T, C= (εT−ε2o) / ε2g(T 20
) (ppm/'C) where ε, T'' is the dielectric constant at C, ε2° is the dielectric constant at 20°C, and T is the measurement temperature (room temperature).
そしてこのようにして表1に示す如き各試料を作成し、
それらの誘電率、Q、温度係数等電気的緒特性を測定し
た。そして表1の各試料を第1図の二成分系図に示した
。In this way, each sample as shown in Table 1 was prepared,
Their electrical properties such as dielectric constant, Q, and temperature coefficient were measured. Each sample in Table 1 is shown in the binary component diagram in FIG.
表 1 この表1をグラフにしたものが第1図である。Table 1 FIG. 1 is a graph of Table 1.
この表1から明らかなようにLa2o3@ 2 Ti0
z 95モル饅以上の場合には試料Na、1 、2 、
3に示す如く。As is clear from Table 1, La2o3@2Ti0
If z is 95 mol or more, sample Na, 1, 2,
As shown in 3.
本焼成温度が1680℃とかなり高くすることが必要と
なり、焼結性が悪くなるとともに誘電率がそれぞれ41
以下と低く不充分である。It is necessary to raise the main firing temperature to 1680℃, which deteriorates the sinterability and reduces the dielectric constant to 41.
It is insufficient as it is below.
そしてBa0exTiO2が25モル係以上の場合には
。And when Ba0exTiO2 is 25 molar or more.
試料Nn 18 、19に示す如く、温度係数が急激に
マイナス側に大きくなりその割には誘電率が大きくなら
ず実用的でない。As shown in samples Nn 18 and 19, the temperature coefficient suddenly increases to the negative side, and the dielectric constant does not increase accordingly, making it impractical.
これに対してBaOa x TiO2が5.0モ+%〜
25モル% 、 La2O2e2 TiO2が75モル
%〜95モルチの組成範囲の場合には焼成温度も162
0℃〜1640℃とあまり高くなく、その誘電率も60
以上でかつQの値も6000以上で充分に大きなものと
なる。On the other hand, BaOa x TiO2 is 5.0 mo+%~
25 mol%, La2O2e2 TiO2 is in the composition range of 75 mol% to 95 mol%, the firing temperature is also 162 mol%.
It is not very high at 0°C to 1640°C, and its dielectric constant is 60.
In addition, the value of Q is also 6000 or more, which is sufficiently large.
またx−2以下では試料Na 5 、14に示す如<、
Q低下が著しく実用的でない。x−7以上では試料NC
L 6 、17に示す如く、ε8が小となる。In addition, below x-2, as shown in sample Na 5, 14,
It is not practical because the Q decrease is extremely high. Sample NC above x-7
As shown in L 6 and 17, ε8 becomes small.
しかも第2図に示す如く、その容量変化率は。Moreover, as shown in Figure 2, the rate of change in capacity is.
広い温度範囲に亘って直線性の良好な温度特性のものが
得られる。なお第2図は温度f℃l−容量変化率(%)
を示すものであり、直線4は表1の試料Nα4として示
される組成物の特性を示し、直線15は同じくNα15
として示される組成物についての特性を示す。Temperature characteristics with good linearity can be obtained over a wide temperature range. In addition, Figure 2 shows temperature f℃l - capacity change rate (%)
Line 4 indicates the characteristics of the composition shown as sample Nα4 in Table 1, and line 15 also indicates Nα15.
Characteristics for the composition shown as:
この第2図より明らかなように9本発明に係る誘電体磁
器組成物は一30℃〜+100℃の広い温度範囲にわた
り、容量の温度変化特性が非常に高い直線性を示すこと
がわかる。なお2図示省略したが9本発明の他の試料で
も同様の結果が得られた。As is clear from FIG. 2, it can be seen that the dielectric ceramic composition according to the present invention exhibits extremely high linearity in the temperature change characteristic of capacitance over a wide temperature range from -30°C to +100°C. Similar results were obtained with 9 other samples of the present invention, although 2 were not shown.
本発明は、上記の如く、誘電率およびQが犬きく、シか
も温度係数が小さく、誘電率の温度特性の直線性が非常
に良好で、容量変化率が極めて小さい、焼結性の良好な
誘電体磁器組成物を提供することができる。As described above, the present invention has high dielectric constant and Q, low temperature coefficient, very good linearity of temperature characteristic of dielectric constant, very small capacitance change rate, and good sinterability. A dielectric ceramic composition can be provided.
したがって本発明によれば温度補償用もしくは高周波用
の磁器コンデンサまたは誘電体共振器等の材料として非
常に好適な誘電体磁器組成物を提供することができる。Therefore, according to the present invention, it is possible to provide a dielectric ceramic composition that is very suitable as a material for temperature compensation or high frequency ceramic capacitors, dielectric resonators, and the like.
第1図は本発明に係る誘電体磁器組成物の組成比を示す
二成分系のQ、T、C,εS特性図、第2図は同じく温
度−容量変化率特性図である。
特許出願人 ティーディーケイ株式会社代理人弁理士
山 谷 晧 榮FIG. 1 is a Q, T, C, εS characteristic diagram of a binary system showing the composition ratio of the dielectric ceramic composition according to the present invention, and FIG. 2 is a temperature-capacitance change rate characteristic diagram. Patent applicant: TDC Co., Ltd., agent patent attorney
Akira Yamatani
Claims (1)
2系誘電体磁器組成物(但しx = 3〜6)であって
、酸化物に換算してTi0z67.2 モル%〜75.
0 モル% 、 BaO1,56モル96〜7.69モ
ル%、 La20318.75モル%〜31.15モル
襲の組成範囲でらることを特徴とする誘電体磁器組成物
。1) BaO・x Ti02-La2O5・2 TiO
A two-system dielectric ceramic composition (x = 3 to 6) containing Ti0z67.2 mol% to 75.2 mol% in terms of oxide.
A dielectric ceramic composition characterized in that it has a composition ranging from 18.75 mol% to 31.15 mol% BaO, 96 to 7.69 mol% BaO, and 18.75 mol% to 31.15 mol% La203.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10824983A JPS603A (en) | 1983-06-16 | 1983-06-16 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10824983A JPS603A (en) | 1983-06-16 | 1983-06-16 | Dielectric porcelain composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS603A true JPS603A (en) | 1985-01-05 |
Family
ID=14479863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10824983A Pending JPS603A (en) | 1983-06-16 | 1983-06-16 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS603A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4500262A (en) * | 1979-05-08 | 1985-02-19 | Sugino Machine Limited | Variable pressure and displacement reciprocating pump |
-
1983
- 1983-06-16 JP JP10824983A patent/JPS603A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4500262A (en) * | 1979-05-08 | 1985-02-19 | Sugino Machine Limited | Variable pressure and displacement reciprocating pump |
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