JPS604225A - Method for removing resin burr in resin mold semiconductor device - Google Patents

Method for removing resin burr in resin mold semiconductor device

Info

Publication number
JPS604225A
JPS604225A JP58113037A JP11303783A JPS604225A JP S604225 A JPS604225 A JP S604225A JP 58113037 A JP58113037 A JP 58113037A JP 11303783 A JP11303783 A JP 11303783A JP S604225 A JPS604225 A JP S604225A
Authority
JP
Japan
Prior art keywords
resin
leads
semiconductor device
frame
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58113037A
Other languages
Japanese (ja)
Inventor
「だい」 克明
Katsuaki Utena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58113037A priority Critical patent/JPS604225A/en
Publication of JPS604225A publication Critical patent/JPS604225A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/04Manufacture or treatment of leadframes
    • H10W70/045Cleaning

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To remove the resin burrs of leads of a frame or between the leads easily in a short time by irradiation with laser beam. CONSTITUTION:Irradiation with laser beam removes the resin burrs of leads of a frame or between the leads. For example, a transporting member which is intermittently actuated transports a resin-mold semiconductor device 3 to place it right under a mask 14. Subsequently, a laser oscillator is actuated to project the laser beam 17 which goes through a deflecting member 12, a condensing lens 13 and slits 16, 16 of the mask 14 to irradiate the resin burrs 5... on the leads 4 or between the leads 4 of the semiconductor device 3 and to remove them by sublimation.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は樹脂封止型半導体装置の樹脂パリ除去方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for removing resin debris from a resin-sealed semiconductor device.

〔発明の技術的背景〕[Technical background of the invention]

樹脂封止型半導体装置、例えばフラットパック型の半導
体装置は第1図に示す如くフレーム1上にマウントされ
た半導体素子(図示せず)を樹脂層2で封止した構造に
なっている。こうした構造の半導体装置lの樹脂封止は
通常、半導体素子がマウントされたフレームを成形用金
型内に収納した後、該金型内にエポキシ樹脂等の樹脂を
注入して前記素子を樹脂層で封止する方法が採用されて
いる。しかしながら、かかる樹脂封止工程においては、
樹脂層2付近のフレーム1のリード4上及びリード4間
にわ、1脂バリ5・・・が発生するため、後加工として
パリ5・・・の除去工程が必要となる。
A resin-sealed semiconductor device, for example, a flat-pack type semiconductor device, has a structure in which a semiconductor element (not shown) mounted on a frame 1 is sealed with a resin layer 2, as shown in FIG. Normally, a semiconductor device having such a structure is encapsulated with resin by housing a frame on which a semiconductor element is mounted in a molding mold, and then injecting a resin such as epoxy resin into the mold to seal the element in a resin layer. A method of sealing is used. However, in such a resin sealing process,
Since 1 fat burrs 5 are generated on and between the leads 4 of the frame 1 near the resin layer 2, a step of removing the burrs 5 is required as a post-processing.

このようなことから、従来においては■ブラシでこすっ
てパリを除去する方法、■ガラスピーズ等を吹き付けて
・クリを砕き除去する方法、■アウトリードのカットエ
ンドベンドの時、機械的にパリを砕いて除去する方法、
が行なわれている。
For this reason, in the past, there were two methods: ■Remove the cracks by rubbing with a brush, ■Remove the cracks by spraying with glass beads, etc., and ■Mechanically remove the cracks when cutting and bending outleads. How to crush and remove
is being carried out.

〔背景技術の問題点〕[Problems with background technology]

しかしながら、上記■〜■の方法ではパリを短時間で完
全に除去することが難しく、完全の除去には長時間の処
理を要する。
However, it is difficult to completely remove paris in a short period of time using the methods (1) to (2) above, and complete removal requires a long processing time.

〔発明の目的〕[Purpose of the invention]

本発明はフレームのリード上及びリード間に付着した樹
脂パリを簡mかつ知時間で除去し得る樹脂封止型半導体
装置の樹脂パリ除去方法を提供しようとするものである
SUMMARY OF THE INVENTION The present invention provides a method for removing resin debris from a resin-sealed semiconductor device by which resin debris deposited on and between the leads of a frame can be removed easily and in a short amount of time.

〔発明の概要〕[Summary of the invention]

本発明はフレーム」二にマウントさ、/1.た半導体素
子を樹脂層で封止した構造の半導体装置における前記フ
レームのリード上及びリード間に付着された樹脂パリを
除去するにあたり、前記リード−J:及びリード間の樹
脂パリにレーザ光を照射することによって、簡単かつ短
時間で樹脂パリを完全に除去することを骨子とする。
The present invention is mounted on a frame'2, /1. In a semiconductor device having a structure in which a semiconductor element is sealed with a resin layer, a laser beam is irradiated on the lead J and the resin pars between the leads in order to remove the resin pars adhered on and between the leads of the frame. The main idea is to completely remove resin debris easily and in a short time by doing this.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を第2図及び第3図を参照しで説
、明する。
Hereinafter, embodiments of the present invention will be described and explained with reference to FIGS. 2 and 3.

図中の11けレーザ、発振器であり、この発振器11の
レーザ光の出射側にはレーザ光を下方に向けるプこめの
ミラーを有する方向変換部材12が配設されている。こ
の方向変換部材12の下方には集光レンズ系13が配設
され、更にその下方にはマスク14が配設されている。
The number 11 laser in the figure is an oscillator, and a direction changing member 12 having a mirror that directs the laser beam downward is disposed on the laser beam output side of the oscillator 11. A condenser lens system 13 is disposed below the direction changing member 12, and a mask 14 is further disposed below the condensing lens system 13.

このマスク14は第3図に示す如く、マスク基板15と
この基板15に処理すべき半導体装置のリード形状に対
応して開口され、だスリット(透光部)16,16とか
ら形成されている。
As shown in FIG. 3, this mask 14 is formed of a mask substrate 15 and slits (light-transmitting portions) 16, each having an opening corresponding to the shape of a lead of a semiconductor device to be processed on this substrate 15. .

次に、本発明の樹脂パリ除去方法を説明する。Next, the method for removing resin debris of the present invention will be explained.

まず、間歇的に駆動する搬送部材により第1図図示の樹
脂封止型半導体装#互を搬送して、同装置旦を第2図に
示す如くマスク14の直丁に位置させる。次いで、レー
ザ発振器をONしてレーザ光17を出射し、方向変換部
材12、集光レンズ系13及びマスク14のスリット1
6.16を通して半導体装置lのリード4上及びリード
4間の樹脂パリ5・・・に照射して昇華除去する。
First, the resin-sealed semiconductor devices shown in FIG. 1 are transported by a transport member that is driven intermittently, and the device is positioned directly in front of the mask 14 as shown in FIG. Next, the laser oscillator is turned on to emit the laser beam 17, and the direction changing member 12, the condensing lens system 13, and the slit 1 of the mask 14 are
6. Through 16, the resin particles 5 on and between the leads 4 of the semiconductor device 1 are irradiated and removed by sublimation.

したがって、本発明はレーザ光の高エネルギーによって
樹脂パリを昇華せしめるため、簡単かつ短時間で樹脂パ
リを除去できる。
Therefore, in the present invention, since the resin particles are sublimated by the high energy of the laser beam, the resin particles can be removed easily and in a short time.

なお、本発明は第1図に示すフラット・千ツク型の半導
体装置の樹脂パリ除去に限らすD 、I P型の半導体
装置の樹脂パリ除去等にも同様に適用できる。
It should be noted that the present invention is not limited to the removal of resin debris from a flat type semiconductor device as shown in FIG. 1, but can be similarly applied to the removal of resin debris from a D-type semiconductor device, etc.

〔発明の効果〕〔Effect of the invention〕

以上詳述した如く、本発明によればフレームのリード上
及びIJ 17間に付着した樹脂)トクリを簡単かつ短
時間で除去でき、ひいては生産性の向上を達成し得る樹
脂封止型半導体装置の(j、(脂パリ除去方法を提供で
きる0
As described in detail above, according to the present invention, it is possible to easily and quickly remove the resin adhering on the leads of the frame and between the IJs 17, and to improve the productivity of the resin-sealed semiconductor device. (j, (0 that can provide a method for removing greasy flakes)

【図面の簡単な説明】[Brief explanation of drawings]

第1図は樹脂パリが付着されたフラット・9ツク型の樹
脂封止型半導体装置を示す斜視図、第2図は本発明方法
に用いられる樹脂パリ除去装置の一形態を示す概略図、
第3図は第2図の装置に組込まれたマスクを示す斜視図
である。 1・−・フレーム、2・・・樹脂層、J・・・半導体装
置、4・・・’) )”% 5・・・IF脂パリ、1ノ
・・・レーザ発振器、12・一方向変換部材、ノ4・・
・マスク、17・・・レーザ光。
FIG. 1 is a perspective view showing a flat nine-piece resin-sealed semiconductor device to which resin particles are attached, and FIG. 2 is a schematic diagram showing one form of a resin particle removal device used in the method of the present invention.
FIG. 3 is a perspective view of a mask incorporated into the apparatus of FIG. 2; 1...Frame, 2...Resin layer, J...Semiconductor device, 4...')''% 5...IF fat pad, 1 No....Laser oscillator, 12.One-way conversion Parts, No. 4...
・Mask, 17...Laser light.

Claims (1)

【特許請求の範囲】[Claims] フレーム上にマウントされた半導体素子を樹脂層で封止
した構造の半導体装置における前記フレームのリード上
及びリード間に付着された樹脂パリを除去するにあたり
、前記リード上及びリード間の樹脂パリにレーザ光を着
久射して除去せしめることを特徴とする樹脂封止型半導
体装置の樹脂パリ除去方法。
In a semiconductor device having a structure in which a semiconductor element mounted on a frame is sealed with a resin layer, a laser beam is applied to the resin particles on the leads and between the leads in order to remove the resin particles attached on and between the leads of the frame. A method for removing resin pars from a resin-sealed semiconductor device, the method comprising removing resin particles by irradiating light over a long period of time.
JP58113037A 1983-06-23 1983-06-23 Method for removing resin burr in resin mold semiconductor device Pending JPS604225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58113037A JPS604225A (en) 1983-06-23 1983-06-23 Method for removing resin burr in resin mold semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58113037A JPS604225A (en) 1983-06-23 1983-06-23 Method for removing resin burr in resin mold semiconductor device

Publications (1)

Publication Number Publication Date
JPS604225A true JPS604225A (en) 1985-01-10

Family

ID=14601875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58113037A Pending JPS604225A (en) 1983-06-23 1983-06-23 Method for removing resin burr in resin mold semiconductor device

Country Status (1)

Country Link
JP (1) JPS604225A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473731A (en) * 1987-09-16 1989-03-20 Rohm Co Ltd Manufacture of molding part in electronic component
JPH01122417A (en) * 1987-11-06 1989-05-15 Rohm Co Ltd Cleaning method for mold for synthetic resin molding
FR2684916A1 (en) * 1991-10-31 1993-06-18 Dunlop Automotives Composites MANUFACTURE OF PLASTIC ARTICLES.
GB2266262A (en) * 1991-10-31 1993-10-27 Dunlop Automotives Composites Removal of spurious formations formed during moulding of plastics articles

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473731A (en) * 1987-09-16 1989-03-20 Rohm Co Ltd Manufacture of molding part in electronic component
JPH01122417A (en) * 1987-11-06 1989-05-15 Rohm Co Ltd Cleaning method for mold for synthetic resin molding
FR2684916A1 (en) * 1991-10-31 1993-06-18 Dunlop Automotives Composites MANUFACTURE OF PLASTIC ARTICLES.
GB2266262A (en) * 1991-10-31 1993-10-27 Dunlop Automotives Composites Removal of spurious formations formed during moulding of plastics articles
BE1006261A5 (en) * 1991-10-31 1994-07-05 Dunlop Automotive Composites U Manufacture of articles plastic.
GB2266262B (en) * 1991-10-31 1996-07-03 Dunlop Automotives Composites Manufacture of plastics articles

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