JPS6043489A - 分子線堆積装置 - Google Patents
分子線堆積装置Info
- Publication number
- JPS6043489A JPS6043489A JP13712384A JP13712384A JPS6043489A JP S6043489 A JPS6043489 A JP S6043489A JP 13712384 A JP13712384 A JP 13712384A JP 13712384 A JP13712384 A JP 13712384A JP S6043489 A JPS6043489 A JP S6043489A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- deposition
- beam deposition
- section
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13712384A JPS6043489A (ja) | 1984-07-04 | 1984-07-04 | 分子線堆積装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13712384A JPS6043489A (ja) | 1984-07-04 | 1984-07-04 | 分子線堆積装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23491584A Division JPS60194065A (ja) | 1984-11-09 | 1984-11-09 | 分子線堆積方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6043489A true JPS6043489A (ja) | 1985-03-08 |
| JPS6229508B2 JPS6229508B2 (fr) | 1987-06-26 |
Family
ID=15191352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13712384A Granted JPS6043489A (ja) | 1984-07-04 | 1984-07-04 | 分子線堆積装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043489A (fr) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5216482A (en) * | 1975-07-30 | 1977-02-07 | Toshiba Corp | Surface treatment apparatus using activated gas |
| JPS52143980A (en) * | 1976-05-25 | 1977-11-30 | Nec Corp | Equipment for plasma deposition |
-
1984
- 1984-07-04 JP JP13712384A patent/JPS6043489A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5216482A (en) * | 1975-07-30 | 1977-02-07 | Toshiba Corp | Surface treatment apparatus using activated gas |
| JPS52143980A (en) * | 1976-05-25 | 1977-11-30 | Nec Corp | Equipment for plasma deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6229508B2 (fr) | 1987-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5232571A (en) | Aluminum nitride deposition using an AlN/Al sputter cycle technique | |
| US4576829A (en) | Low temperature growth of silicon dioxide on silicon | |
| JPH0254429B2 (fr) | ||
| JPH0620122B2 (ja) | 半導体素子 | |
| RU2411304C1 (ru) | Устройство для вакуумного напыления пленок | |
| JPH0380531A (ja) | 表面処理方法と装置及び薄膜部材 | |
| JPS6043489A (ja) | 分子線堆積装置 | |
| US5770467A (en) | Method for forming electrode on diamond for electronic devices | |
| JP4055939B2 (ja) | LiNbO3薄膜形成方法 | |
| JPS60194065A (ja) | 分子線堆積方法 | |
| JPH07118860A (ja) | 対向電極型マイクロ波プラズマ処理装置および処理方法 | |
| Dellafera et al. | An alternative method of preparing hydrogen-doped evaporated amorphous silicon preliminary report | |
| JPH031377B2 (fr) | ||
| JP2506961B2 (ja) | 薄膜トランジスタの製造方法 | |
| RU2769751C1 (ru) | Устройство для нанесения сверхтолстых слоев поликристаллического кремния | |
| JPH05255859A (ja) | 薄膜形成装置 | |
| JPH0252422A (ja) | 薄膜製造方法及び装置 | |
| JPH05311429A (ja) | 薄膜形成装置 | |
| JP2609844B2 (ja) | エピタキシヤル成長方法 | |
| JPH01104763A (ja) | 金属化合物薄膜の製造方法 | |
| JP2743386B2 (ja) | 薄膜形成方法 | |
| JPH048506B2 (fr) | ||
| JP2000087232A (ja) | シリコンカーバイド結晶膜の形成方法 | |
| JP2909087B2 (ja) | 薄膜形成装置 | |
| JPH02230734A (ja) | 薄膜形成装置 |