JPS6045072A - Photoconductive member - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoconductive member that is sensitive to electromagnetic waves such as light (here, light in a broad sense refers to ultraviolet rays, visible rays, infrared rays, X-rays, R-rays, etc.). Regarding.

As a photoconductive material for forming a photoconductive layer in a solid-state imaging device, an electrophotographic image forming member in the image forming field, or a document reading device, it has high sensitivity and a high signal-to-noise ratio [photocurrent (Ip)].
/dark current (Id)), has absorption spectrum characteristics that match the spectrum characteristics of the irradiated electromagnetic waves, has fast photoresponsiveness, has the desired dark resistance value, and is non-polluting to the human body during use. In addition, solid-state imaging devices are required to have characteristics such as being able to easily process afterimages within a predetermined time. Particularly in the case of an electrophotographic image forming member incorporated into an electrophotographic apparatus used in an office as a business machine, the above-mentioned non-polluting property during use is an important point.

Based on this point, amorphous silicon (hereinafter referred to as a-8i) is a photoconductive material that has recently attracted attention.
Publication No. 855718 describes an image forming member for electrophotography,
German Published Publication No. 2933411 describes an application to a photoelectric conversion/reading device.

On the other hand, a photoconductive member having a conventional photoconductive layer composed of A-8I has a low dark resistance value and a low light sensitivity.

Electrical, optical, and photoconductive properties such as photoresponsiveness.

The reality is that there are still areas that need to be further improved in terms of use environment characteristics such as moisture resistance and stability over time, which require comprehensive improvement of characteristics.

For example, when applying it to an electrophotographic image forming member, when trying to simultaneously achieve high photosensitivity and high dark resistance, in the past, it has often been observed that residual potential remains during use. When a photoconductive member is used repeatedly for a long period of time, fatigue accumulates due to repeated use, resulting in the so-called ghost phenomenon that causes afterimages, or when used repeatedly at high speeds, responsiveness gradually decreases, etc. There were many cases where problems occurred.

Furthermore, a-8i has a relatively smaller absorption coefficient in the long wavelength region than in the short wavelength region of the visible light region, which makes it different from the semiconductors currently in practical use. In matching, when commonly used halogen lamps and fluorescent lamps are used as light sources, there is still room for improvement in that the long wavelength side light cannot be used effectively. .

In addition, if the irradiated light is not absorbed sufficiently in the photoconductive layer and the amount of light reaching the support increases,
If the support itself has a high reflectance for light that passes through the photoisoelectric layer, interference due to multiple reflections will occur within the photoconductive layer, which is one of the causes of "blurring" in the image. .

This effect becomes a big problem especially when a semiconductor laser is used as a light source, in which case the irradiation spot must be made smaller to increase the resolution.

Furthermore, when the photoconductive layer is composed of a %a-F3i material, hydrogen atoms, halogen atoms such as fluorine atoms, and halogen atoms such as danshi atoms are added to improve the electrical, electrical, and photoconductive properties. Boron atoms, phosphorus atoms, etc. are included to control the electrical conduction type, or other atoms are included as constituent atoms in the light 4 electrons to improve other properties, but the content of these constituent atoms is Depending on the method used, problems may arise in the electrical or photoconductive properties of the formed layer.

That is, for example, the formed light guide i! There may be cases where the lifespan of the photovoltaic particles generated in the layer due to light irradiation is not sufficient, or in the dark area, the injection of a small amount of charge on the support side is not sufficient. Not at all.

Furthermore, when the layer thickness exceeds 10-odd microns, the layer may lift or peel off from the surface of the support as time passes after it is left in the air after being taken out of the vacuum deposition chamber for I/& formation. Otherwise, phenomena such as cracks in the layer were likely to occur. This phenomenon often occurs especially when the support is a drum-shaped support commonly used in the field of electrophotography, and there are points that need to be solved in terms of stability over time. .

Therefore, while efforts are being made to improve the properties of the a-8i material itself, it is necessary to take measures to solve all of the above-mentioned problems when designing photoconductive members.

The present invention has been made in view of the above-mentioned points, and is characterized by its applicability and applicability to a-8i as a photoconductive member used in electrophotographic image forming members, solid-state imaging devices, reading devices, etc. As a result of comprehensive research and consideration from this point of view, we found that the base material is silicon atom (Si) and germanium atom (Ge), and contains at least one of hydrogen atom (H) or... rogen atom (X). Amorphous material, Tokoro M
Photoconductive material composed of hydrogenated amorphous silicon germanium, halogenated amorphous silicon germanium, or halogen-containing hydrogenated amorphous silicon germanium [hereinafter a-8iGe(H,X)J will be used as a generic term for these] A photoconductive member designed and produced with a specific structure as explained below, which has a photoreceptive layer exhibiting a photoreceptive layer, exhibits extremely superior properties in practical use, and is superior to conventional photoconductive members. Compared to photoconductive materials, it is superior in all respects, especially as a photoconductive material for electrophotography, and has excellent absorption spectrum characteristics on the long wavelength side. It is based on what we have found to be good.

The present invention has stable electrical, optical, and photoconductive properties at all times, is suitable for all environments with almost no restrictions on usage environments, and has excellent photosensitivity on the long wavelength side. The main object of the present invention is to provide a photoconductive member that is extremely resistant to fatigue, does not cause deterioration even after repeated use, and has no or almost no residual potential observed.

Another object of the present invention is to provide a photoconductive member that has high photosensitivity in the entire visible light range, has excellent matching with semiconductor lasers in particular, and has fast photoresponse.

Another object of the present invention is to have excellent adhesion between a layer provided on a support and the support and at each interlayer trap of laminated layers.
It is an object of the present invention to provide a photoconductive member that is dense and stable in terms of structural arrangement and has high layer quality.

Another object of the present invention is to maintain charge retention during charging processing for electrostatic image formation to such an extent that ordinary electrophotography can be applied very effectively when applied as an image forming member for electrophotography. It is an object of the present invention to provide a photoconductive member which has excellent electrophotographic properties that are sufficiently durable and whose properties hardly deteriorate even in a humid atmosphere.

Still another object of the present invention is to provide a photoconductive member for electrophotography that can easily produce high-quality images with high density (,/'t-7 tones) and high resolution. That's true.

Yet another object of the present invention is high photosensitivity.

It is also an object to provide a photoconductive member having high signal-to-noise ratio characteristics and good electrical contact with the support.

The photoconductive member of the present invention includes a support for the photoconductive member and a photoconductive photoreceptive layer made of an amorphous material containing silicon atoms and germinillam atoms, and the photoconductive layer has photoconductivity. The layers contain oxygen atoms, each with a concentration distribution in the layer thickness of C+n.

C(31, C(2+ first layer region, third layer region.

It is characterized by having the second layer region in this order (from the support side) (However, C(a) alone does not become the maximum, and any one of CI+I, Ct21, C15) becomes 0. , the other two are not O and are not equal).

The photoconductive member of the present invention designed to have the above-mentioned layer structure can solve all of the above-mentioned problems and has extremely excellent electrical and optical properties.

Shows photoconductive properties, electrical pressure resistance, and usage environment properties.

In particular, when applied as an electrophotographic image forming member, there is no influence of residual potential on image formation, its electrical characteristics are stable, and it has high sensitivity and a high 8N ratio. , has excellent light fatigue resistance, repeated use characteristics, and has a high degree of a.
It is possible to stably and repeatedly obtain high-quality images with clear halftones and high resolution.

In addition, the photoconductive member of the present invention has a photoreceptive layer formed on the support, which is strong and has excellent adhesion to the support, and can be continuously repeated at high speed for a long time. can be used.

Further, the photoconductive member of the present invention has high photosensitivity in the entire visible light range, is particularly excellent in matching with semiconductor lasers, and has fast photoresponse.

Hereinafter, the photoconductive member of the present invention will be explained in detail with reference to the drawings.

FIG. 1 is a schematic configuration diagram schematically shown to explain the layer configuration of a photoconductive member according to a first embodiment of the present invention.

A photoconductive member 100 shown in FIG. 1 has a photoreceptive layer containing a-81Ge (H, 10
2.

The germanium atoms contained in the photoreceptive layer 102 may be contained so as to be evenly distributed in the photoreceptive layer 102, or may be contained evenly in the layer thickness direction. However, the distribution concentration may be non-uniform. However, in any case, in the in-plane direction parallel to the surface of the support, it is uniformly distributed and evenly contained in order to create uniform properties in the in-plane direction. is also necessary.

In particular, it is contained evenly in the layer thickness direction of the light-receiving layer 102, and on the side opposite to the side where the support 101 is provided (the free surface 103 side of the light-receiving layer 102). On the other hand, the support 101 side (light receiving layer 102 and support 1
The photoreceptor 1 is distributed so that it is distributed more toward the interface side with the photoreceptor 01, or vice versa.
Contained in 102.

In the photoconductive member of the present invention, as described above, the distribution state of germanium atoms contained in the photoreceptive layer is parallel to the surface of the support body in the layer thickness direction. It is desirable to have a uniform distribution state in the in-plane direction.

The photoreceptive layer 102 of the photoconductive member 100 shown in FIG.
(2nd layer region with value 21+21105, C(3
), which is the value of the 30th layer region +31106.

In the present invention, the above-mentioned item 1. Second. Each third layer region does not necessarily need to contain oxygen atoms in any of the three layer regions, but any one of the three layer regions does not necessarily have to contain oxygen atoms.
If the layer region does not contain oxygen atoms, the other two layer regions always contain oxygen atoms, and the distribution concentration of oxygen atoms in the layer thickness direction in those layer regions must be different. distribution W' toxicity c(1
1, Cf2+, and C(3), it is necessary to form each layer region so that when any one of the three atoms becomes O, the other two are not O and are not equal.

By doing this, when subjected to charging treatment, the light receiving layer 1 is removed from the free surface 103 side or from the support 101
It is possible to effectively prevent charges from being injected into the photoreceptive layer 102, and at the same time improve the dark resistance of the photoreceptive layer 102 itself and the adhesion between the support 101 and the photoreceptive layer 102. I can do it.

The photoreceptor 4102 has practically sufficient photosensitivity and dark resistance, can sufficiently prevent the injection of charge into the photoreceptor IN 102, and can prevent the transport of photocarriers occurring in the photoreceptor IN 4102. In order to effectively achieve this, it is necessary to design the light-receiving layer 102 so that the distribution humidity C(3) of oxygen atoms in the third layer region does not become maximum by itself. In this case, it is preferable to design the photoreceptive layer 102 so that the thickness of the third layer region is sufficiently thicker than that of the other two layer regions. The layer thickness of the layer region is preferably such that the photoreceptor 1@102 is installed so that it occupies one-fifth or more of the layer thickness of the photoreceptor 1-102.

In the present invention, the layer thickness of the first layer region (1) and the second layer region (2) is preferably 0.0'03 to 30
μ, preferably 0.004 to 20μ, optimally 0.0
It is desirable to set it to 05-loμ.

Further, the layer thickness of the third layer region (3) is preferably 1
~100μ, more preferably 1-80μ, optimally 2-5
It is desirable to set it to 0μ.

The first layer region (11) and the second layer region (2) are designed to primarily function as charge injection blocking layers that block charge injection into the photoreceptive layer. When providing 6t layers, it is desirable that the I layer thickness of the first layer region f11 and the second layer region (2) is each 10μ at maximum.

When designing the photoreceptive layer so that the third layer region (3) mainly functions as a charge generation layer, the third layer region (3)
The layer thickness in 3) is determined as desired depending on the mosquito absorption coefficient of the light source used. In this case, if a light source normally used in the field of electrophotography is used, the number of layers in the third layer region (3) may be about 1077 at most.

In order for the third l-layer region (3) to primarily have the function of charge transport α, the layer thickness is preferably at least 5B.

In the present invention, the oxygen atom content C] distribution strength C (11,
The maximum value of ct2+ and C(3) is preferably 67 for the sum of silicon atoms, germanium atoms, and oxygen atoms, and preferably 50 for atomic5g1.
atomic%, preferably 40 atomic%. Moreover, the distribution concentration Cfl, C(
When 21°C(3) is not 0, the minimum value is preferably 1 atomic ppm, more preferably 50 atomic ppm, optimally 100100 atomic ppm, based on the sum of silicon atoms, germanium atoms, and oxygen atoms.
It is desirable to set it to ato ppm.

FIGS. 2 to 10 show typical examples in which the distribution state of germanium atoms contained in the photoreceptive layer in the layer thickness direction is nonuniform.

In Figures 2 to 10, the horizontal axis represents the distribution concentration C of germanium atoms, the vertical axis represents the layer thickness of the photoreceptive layer exhibiting photoconductivity, and tB represents the surface position of the layer on the support side in %' T indicates the position of the surface of the photoreceptive layer on the side opposite to the support side. That is, the photoreceptive layer containing germanium atoms is formed from the 1B side toward the 1T side.

FIG. 2 shows a first typical example of the distribution state of germanium atoms contained in the photoreceptive layer in the layer thickness direction.

In the example shown in FIG. 2, the distribution of germanium atoms up to the interface position [tn to position t] where the surface where the photoreceptive layer containing germanium atoms is formed and the surface of the photoreceptor layer are in contact with each other. While the concentration C takes a constant value CI, germanium atoms are contained in the formed photoreceptive layer, and the germanium atoms are at the position t.
1 and 2 are gradually and continuously decreased from the distribution concentration G until reaching the interface position tT. At the interface position tT, the distribution concentration C of germanium atoms is Ca.

In the example shown in Figure 3, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C6 from position tB to position Wt and tr, and reaches the concentration C1 at position 1. It forms a similar distribution state.

In the case of FIG. 4, the position tB is the position t! Until then, the distribution concentration C of germanium atoms is assumed to be a constant value with the concentration Ca, and the position lt1. and position tr, the distribution concentration C is gradually and continuously reduced, and at one position, the distribution concentration C is substantially zero (here, substantially zero is a case where the amount is less than the detection limit). .

In the case of FIG. 5, the distribution concentration C of germanium atoms is gradually decreased continuously from the concentration C8 from the position 1B to the position tT, and becomes substantially zero at the position tT.

In the example shown in FIG. 6, the distribution concentration C of germanium atoms is a constant value of concentration C0 between position 1B and position 11, and is the concentration C1· at position WttT. Position 1. Between the positions t1 and 1, the distribution concentration C decreases linearly from position t1 to position #.

In the example shown in FIG. 7, the one-distribution concentration C is at the position itg
At the lower position ff tit, take a constant value of the concentration c, I,
From position t to position 1, the concentration is Cat, and the concentration is C1.
The distribution state decreases linearly up to l.

In the example shown in FIG. 8, the distribution concentration C of germanium atoms from position 1B to position tT is the concentration CI 4
It decreases in a linear manner, virtually reaching zero.

In Figure 9, 5 positions 1. Until reaching position t, the distribution concentration C of germanium atoms is reduced numerically between the positions t and tT until the concentration CI.
An example is shown in which the concentration CI@ is set to a constant value between .

In the example shown in FIG. 10, the distribution concentration C of germanium atoms is the concentration Qf at the position tB, and
The concentration C+V is initially gradually decreased until reaching the point t, and then rapidly decreased to the concentration C+a at the position t.

Between the position t6 and the position t, it is decreased rapidly at first, and then it is decreased slowly and gradually.
and the density C9 and the position t and the position t.

It has been gradually decreasing at a very slow pace.
At ts, the concentration C1 is reached. Between position t and position t, the concentration C is reduced to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 2 to 10 and some typical examples of the distribution state of germanium atoms contained in the photoreceptive layer in the layer thickness direction, in the present invention, on the support side, , the photoreceptive layer is provided with a distribution state of germanium atoms having a portion where the distribution concentration C of germanium atoms is high, and a portion where the distribution concentration C is considerably lower on the interface tT side than on the support side. If so, this is one of the preferred examples.

The photoreceptive layer constituting the photoconductive member of the present invention preferably contains germanium atoms at a relatively high concentration on the support side or, conversely, on the free surface side, as described above. It is desirable to have a localized area (A) where

For example, if the localized region (5) is explained using the symbols shown in FIGS. 2 to 10, it is desirable that the localized region (5) be provided within 955 points from the interface position 1B.

The localized region (5) may be the entire layer region (LT) from the interface position tB to a thickness of 5 μm, or may be the layer region (LT) up to 5μ thick from the interface position tB.
LT).

Whether the localized region is to be part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (5) has a distribution state of germanium atoms contained therein in the layer thickness direction, and the maximum value CmaX of the distribution concentration of germanium atoms is preferably 1000 atomic ppm or more with respect to the sum with silicon atoms, more preferably. more than 5000 atomic ppm, optimally ld
: I x 10' Atomic ppm or more It is desirable to form a layer so as to obtain a tosal-like fx distribution state.

That is, in the present invention, the photoreceptive layer containing germanium atoms is formed such that the maximum value CmaX of the distribution concentration exists within 5 μm in layer thickness from the support side (layer region 5 μ thick from tB). It is preferable to

In the present invention, the content of germanium atoms contained in the photoreceptive layer is determined as desired so as to effectively achieve the object of the present invention. Preferably/ri1-9.5×101a
tOm101atO, preferably 100 to 8 X 1
0” atomic ppm% optimally 500-7
It is desirable that the amount is X10' atomic ppm.

The distribution state of germanium atoms in the photoreceptive layer is such that germanium atoms are continuously distributed in the entire layer region, and the distribution concentration C of germanium atoms in the layer thickness direction is from the support side to the free surface side of the photoreceptor layer. When a decreasing change toward C or vice versa is given, it is possible to obtain the required characteristics by arbitrarily designing the rate of change curve of the distribution concentration C as desired. A desired photoreceptive layer can be realized.

For example, the degree of distribution of germanium in the photoreceptive layer C
On the support side, the distribution concentration C of germanium atoms is changed by giving sufficient consideration to the distribution concentration curve of germanium atoms, and on the free surface side of the photoreceptive layer, the distribution concentration C is changed to an extremely low value. It is possible to achieve high photosensitivity for light in the entire wavelength range from relatively short wavelengths to relatively short wavelengths, including the optical range, and is effective in preventing interference with coherent light such as laser light. It can be measured accurately.

Furthermore, as will be described later, by extremely increasing the distribution concentration C of germanium atoms at the end of the photoreceptive layer on the side of the support, the photoreceptive layer can be improved when using a semiconductor laser. Light on the long wavelength side that cannot be fully absorbed on the laser irradiation surface side can be substantially completely absorbed in the support side end layer region of the photoreceptive layer, eliminating interference due to reflection from the support surface. can be effectively prevented.

In the photoconductive member of the present invention, the photoreceptive layer contains a , contains an oxygen atom. The oxygen atoms contained in the photoreceptive layer may be contained evenly in the entire layer area of the photoreceptive layer satisfying the above conditions, or may be contained only in a part of the layer area of the photoreceptive layer. It is also possible to make it ubiquitous.

In the present invention, the distribution state of oxygen atoms is non-uniform in the layer thickness direction in the entire photoreceptive layer, as described above.
1st. Second. In each third layer region, the thickness is uniform in the layer thickness direction.

FIGS. 11 to 15 show hypothetical examples of the distribution of oxygen atoms in the entire photoreceptive layer. In addition, the symbols used without exception when explaining the figures of 8 and 8 etc.
It has the same meaning as used in FIGS. 10 to 10.

In the example shown in FIG. 11, positions ftItt from position 1B
.

Until i-J: Oxygen atom distribution concentration CWt is taken as a constant value, and from position t- to position [tr the oxygen atom distribution concentration Cwt
It is said to be constant.

In the example shown in FIG. 12, from position tB to position 1,
The oxygen atom distribution concentration C1j is assumed to be a constant value up to the point ri
tt. From position tll to position t, the oxygen atom distribution concentration is C, and from position tll to position C, the oxygen atom distribution concentration is reduced in three steps.

In the example of FIG. 13, from position 1B to multiple positions t1. From position @ tIt to position tTt, the oxygen atom distribution concentration C1 is defined as C□.

In the example of FIG. 14, the oxygen atom distribution concentration Cms is set from position fKttn to multiple positions trs, the oxygen atom distribution concentration C1 is set from position IjftB to position t14, and the oxygen atom distribution concentration Cs is set from position t14 to position 1r. There is. In this way, the oxygen atom distribution concentration is increased in three stages.

In the 150th example, the oxygen atom distribution concentration CPI is set from position [B to position @tlI, the oxygen atom distribution concentration csm is set from position t+* to position t+a, and from position tts to position [f'
The oxygen atom distribution concentration Csj is set up to ttr. The oxygen atom distribution concentration is made high on the support side and the free surface side.

In the present invention, the layer region (0) containing oxygen atoms provided in the photoreceptive layer (consisting of at least two layer regions of the above-mentioned first, second, and third layer regions) is , when the main purpose is to improve photosensitivity and dark resistance, a free layer is provided so as to occupy the entire layer area of the photoreceptive layer, and a free layer is provided to prevent charge injection from the free surface of the photoreceptive layer. When the main purpose is to provide near the surface and strengthen the adhesion between the support and the photoreceptive layer, it is provided so as to occupy the end layer region of the photoreceptor layer on the support side.

In the first case mentioned above, the content of oxygen atoms contained in the layer region (0) is made relatively low in order to maintain a high photosensitivity, and in the second case the content of oxygen atoms contained in the layer region (0) is kept relatively low in order to maintain high photosensitivity, and in the second case the content of oxygen atoms contained in the layer region (0) is In the third case, it is desirable to use a relatively large amount to prevent injection, and in the third case, to ensure strong adhesion to the support.

In addition, for the purpose of achieving the above-mentioned champion at the same time, a support (
It is distributed at a relatively high concentration in the center of the photoreceptive layer, and at a relatively low concentration in the center of the photoreceptive layer, and in the surface layer region on the free surface side of the photoreceptor layer, a layer with more oxygen atoms is distributed. What is necessary is to form a distribution state of oxygen atoms in the layer region (0).

In the present invention, the content of oxygen atoms contained in the layer region (0) provided in the photoreceptive layer depends on the characteristics required for the layer region (0) itself, or when the layer region (0) is a support. When provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (0), the characteristics of the nucleon layer region and the relationship with the characteristics at the contact interface with the nucleon layer region are also considered. and the content of oxygen atoms is appropriately selected.

The amount of oxygen atoms contained in the layer region (0) is determined as desired depending on the properties required of the photoconductive member to be formed, but it is determined based on the sum of silicon atoms, germanium atoms, and oxygen atoms. Preferably 0.001-50a
tomic%, more preferably 0.002 to 40 a
tomic, optimally 0.003 to 30 atomic
It is desirable that the content be c%.

In the present invention, the layer thickness T of the layer region (0) may or may not occupy the entire area of the photoreceptive layer. When the proportion of the oxygen atoms in the layer thickness T of the photoreceptive layer is sufficiently large, the upper limit of the content of oxygen atoms contained in the layer region (0) is desirably set to be sufficiently larger than the above value.

In the case of the invention, the layer thickness T of the layer region (0). When the ratio of oxygen atoms to the layer thickness T of the photoreceptive layer is two-fifths or more, the upper limit of the amount of oxygen atoms contained in the layer region (0) is set as silicon atoms, germanium atoms, etc. Preferably, 30 atoms for the sum of three atoms, oxygen atoms
ic% or less, more preferably 20 atomic% or less, optimally 10 atomic% or less.

In the present invention, in the layer region (0) containing oxygen atoms constituting the photoreceptive layer, oxygen atoms are contained at a relatively high concentration on the support side and in the vicinity of the free surface, as described above. In the former case, it is possible to further improve the adhesion between the support and the photoreceptive layer and to improve the receptive potential.

The localized region (B) can be explained using the symbols shown in FIGS. 11 to 15 at the interface position tB or [Il!
, is preferably provided within 5μ from the outer surface tT.

In the present invention, the localized region (B) is located at the interface position t
B or the entire layer area up to 5μ thick from the free surface tT (LT
), or as part of the layer region (LT).

Whether the localized region (B) is a part or all of the layer region (LT) is appropriately determined according to the characteristics required of the photoreceptive layer to be formed.

The localized region (B) has the maximum distribution concentration Cma of oxygen atoms as the distribution state of the oxygen atoms contained therein in the layer thickness direction.
x is preferably 500 atomic or more, more preferably 800 atomic or more, optimally 1000
It is desirable that the layers be formed so that a distribution state of atomic P or higher can be obtained.

That is, in the present invention, the layer region (0) containing oxygen atoms has the maximum distribution concentration Cm within 5 μm in layer thickness from the support side or free surface (layer region 5 μ thick from ti+ or tT). It is desirable that the structure be formed so that ax exists.

In the present invention, specific examples of the halogen atom (X) contained in the light-receiving layer if necessary include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. I can do it.

In the photoconductive member of the present invention, the conductive properties of the photoreceptive layer can be controlled as desired by containing a substance (C) that controls the conductive properties in the photoreceptive layer. I can do it.

Examples of such substances include so-called impurities in the semiconductor field, and in the present invention, for a-8tGe (H,,X) constituting the photoreceptive layer to be formed, Examples include a P-type impurity that provides P-type conduction characteristics and an n-type impurity that provides N-type conduction characteristics. Specifically, the P-type impurities include atoms belonging to Group 1 of the periodic table (Group 2 atoms), such as B (boron), Al aluminum), Ga (gallium), and In (indium).

Examples include Tl (thallium), and particularly preferably used are B, Ga, and the like.

Examples of n-type impurities include atoms belonging to Group V of the periodic table (Group II atoms), such as P (phosphorus), As (arsenic), and sb (
(antimony), Bi (bismuth), etc., P is particularly preferably used.

It is 88.

In the present invention, the content of the substance (C) that controls the conduction properties contained in the photoreceptive layer is determined so that the conductivity required for the photoreceptor layer is controlled or the photoreceptor layer is in direct contact. It can be selected as appropriate based on the organic relationship, such as the relationship with the properties at the contact interface with the support provided.

In addition, when the substance for controlling the conduction properties is locally contained in the light-receiving layer region, especially when it is contained in the support-side end layer region of the light-receiving layer, it is added directly to the layer region. The content of the substance that controls the conduction characteristics is appropriately selected in consideration of the characteristics of other layer regions provided in contact with the nucleon and the relationship with the characteristics of the contact interface with the layer region of the nucleon.

In the present invention, the content of the substance (C) that controls conduction properties contained in the photoreceptive layer is preferably o,
oi ~ 5 X 10'atomic ppm, preferably o, s ~ i x i O'atomic P
Pm, optimally 1-5 X 103 atomic P
I) preferably rn.

In the present invention, the content of the substance (C) in the layer region containing the substance fcl that governs the conduction properties is preferably 30 atomic ppm or more, preferably 50 atomic ppm or more.
atonic pI) m or higher, optimally io.

In the case of atomic ppm or more, the substance (C)
is preferably contained locally in a part of the layer region of the photoreceptive layer, and is particularly preferably unevenly distributed in the end layer region of the photoreceptor layer on the side of the support.

Among the above, by incorporating a substance that controls the conduction characteristics in the support-side end layer region (El of the photoreceptive layer) so that the content exceeds the above-mentioned value, for example, the substance to be contained ( When C) is the above-mentioned P-type impurity, it effectively blocks the movement of electrons injected from the support side into the photoreceptive layer when the free surface of the photoreceptive layer is charged to e-polarity. In addition, when the substance to be included is the n-type impurity, it is injected into the photoreceptive layer from the support side when the free surface of the photoreceptive layer is charged to e-polarity. The movement of holes can be effectively stopped by 1!a.

In this way, when the end layer region (E) contains a substance that controls conductivity of one polarity, the remaining layer region of the photoreceptive layer, that is, the end layer region (E) The removed layer region (Z) may contain a substance that controls the conduction characteristics of the other polarity, or a substance that controls the conduction characteristics of the same polarity may be added to the end layer region (E). It may be contained in an amount much smaller than the actual amount contained in.

In such a case, the content of the substance (C) that controls the conduction characteristics contained in the layer region (Z) depends on the polarity and content of the substance contained in the end layer region (E). Although it is determined appropriately according to desire, preferably 0.001 to 1001000ato ppm +
Preferably 0.05 to 500 atomic ppm
, the optimum range is preferably 0.1 to 200 atomic ppm.

In the present invention, when the end layer region (E) and the layer region (Z) contain the same type of substance governing conductivity, the content in the layer region (Z) is preferably , 30
It is desirable to set it to atomic Ppm or less. In addition to the above-mentioned cases, in the present invention, the photoreceptive layer contains a layer region containing a substance controlling conductivity having one polarity, and a substance controlling conductivity having the other polarity. It is also possible to provide a so-called depletion layer in the contact region by directly contacting a layer region containing .

For example, the layer region containing the P-type impurity and the layer region containing the N-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

In the present invention, the photoreceptive layer composed of a-8iGe (H, Ru. For example, by the glow discharge method, a b s G e (H+
) Basically, silicon atoms (St) are supplied to form a photoreceptive layer composed of ? ! ). 81 Source gas for supply and Ge that can supply germanium atoms (Ge)
The raw material gas for supply and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) are kept in a desired gas pressure state in a deposition chamber whose interior can be reduced in pressure. introducing a glow discharge into the deposition chamber;
What is necessary is to form a layer made of a-8iGe (H, Further, in order to contain germanium atoms in a non-uniform distribution state, a layer consisting of a-8iGe(H,X) may be formed while controlling the distribution concentration of germanium atoms according to a desired rate of change curve. In addition, when forming by a sputtering method, for example, a target made of St, or a target made of St and Go in an atmosphere of an inert gas such as Ar or He, or a mixed gas based on these gases. Using two targets, Si and G
If desired, using a mixed target of e.
A raw material gas for supplying Ge diluted with a diluent gas such as He or Ar is introduced into a deposition chamber for spackling with a gas for introducing hydrogen atoms (H) or/and halogen atoms (X) as necessary. This is accomplished by forming a plasma surround of the desired gas. In order to make the distribution of germanium atoms non-uniform, the target may be sputtered while controlling the gas flow rate of the raw material gas for supplying Ge according to a desired rate of change curve.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are housed in a deposition boat as evaporation sources, and the evaporation sources are heated using a resistance heating method or an electron beam. Except for heating and evaporating by method (EB method) etc. and passing the flying evaporated material through the desired gas plasma atmosphere,
It can be carried out in the same manner as in the case of the sputtering method.

Substances that can be used as the raw material gas for supplying Si used in the present invention include SiH,r5izHIl, Si
3 le.

5i4H,. Silicon hydride (silanes) in a gaseous state or which can be gasified, such as SiH, etc., can be effectively used.In particular, SiH, , Si, and H are preferred.

Substances that can be used as raw material gas for supplying Ge include Ge)
T4 y GezHs + Ge5Har Ge4)
T4a t GeJ+t I Ge6H1G r Ge
Germanium hydride in a gaseous state or that can be gasified, such as yHls lQegHls , Qe, H2°, etc., can be effectively used, especially in terms of ease of handling during layer creation work, good Ge supply efficiency, etc. ,GeH,,Ge
,H,.

GeBH is preferred.

Many halogen compounds are effective as the raw material gas for introducing halogen atoms used in the present invention, such as gaseous or Preferred examples include halogen compounds that can be gasified.

Furthermore, hydrogenated sand bed compounds containing halogen atoms, which are in a gaseous state or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective compounds in the present invention. Examples of halogen compounds that can preferably be used include fluorine, chlorine, bromine, and iodine halogen compounds, BrF, ClF, and ClF.

BrF, BrF3. IF8. IF7. IC
Examples include interhalogen compounds such as IBr and IBr.

Specifically, silicon compounds containing halogen atoms, Shinkai, and silane derivatives substituted with halogen atoms include, for example, S
Preferred examples include silicon halides such as iF, St, F6.5iC14,5iBr, and the like.

When a photoconductive member characteristic of the present invention is formed by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying St together with a raw material gas for supplying Ge. A light-receiving layer made of a 5iGe containing halogen atoms can be formed on a desired support without using silicon oxide gas.

When manufacturing a light-receiving layer containing halogen atoms according to the glow discharge method, basically, for example, silicon halide is used as a raw material gas for SL supply, germanium hydride is used as a raw material gas for Ge supply, and Ar, H are used. , He, etc. are introduced into the deposition chamber where the photoreceptive layer is formed at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases. Although it is possible to form a light-receiving layer on a desired support, in order to more easily control the ratio of hydrogen atoms introduced, these gases may be further combined with hydrogen gas to form a layer. You may do so.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blating method,
What is necessary is to introduce a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, for example, gas, or the above-mentioned gases such as silica and/or germanium hydride, is introduced into the deposition chamber for sputtering. It is sufficient to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are used as effective raw material gases for introducing halogen atoms, but in addition, 1. HF, HCI.

) LBr, hydrogen halides such as HI, StH, F,
l SiH2 engineering.

8iH, C4, 5t) icl, , 5il-I, Br
, , 5iHBr, etc., and GeHF, , GeH,F, , GeI(
QF.

GeC112,GeI(,C4,Ge11.Cjl!
, Ge old r, , GeH,Br, .

Ge%Br, GeHI3, GeH,I, ,
Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as Ge Rue, GeF'4
, GeC114, GeBr4°GeI4. GeF
, , GeC112, GeBr, , GeI, etc., and other gaseous or gasifiable substances such as germanium halides can also be mentioned as effective starting materials for forming the photoreceptor layer.

Among these substances, halides containing hydrogen atoms introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as halogen atoms are introduced into the layer when forming the photoreceptive layer. , is used as a suitable raw material for introducing halogen in the present invention.

In order to structurally introduce hydrogen atoms into the photoreceptive layer, in addition to the above, hydrogen atoms or SiH<+81. H,j si,,H
, 1Hi, H, etc. with germanium or a germanium compound for supplying Ge, or with Ge
H4, Ge21 day-+ Ge5Har Ge4H+o
l Ge4H+o l Ga@I(141GeyH,
lGe5H+s, Ge, H,. This can also be carried out by causing germanium hydride such as the like and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred embodiment of the present invention, the amount of hydrogen atoms (goods) or the amount of halogen atoms (X) or the amount of hydrogen atoms and halogen atoms contained in the photoreceptive layer of the photoconductive member to be formed is $
-0(H+X) is preferably 0.01 to 40 a
tomic%, more preferably 0.05-30 atoms
ic%, most preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the photoreceptive layer, for example, the support temperature or/and the hydrogen atoms (H) or halogen atoms (X)
It is only necessary to control the introduction of the starting material used for containing the material into the deposition system, the discharge force, etc.

In the present invention, in order to provide the layer region (0) containing oxygen atoms in the photoreceptive layer, when forming the photoreceptive layer, the starting material for introducing oxygen atoms is added to the above-mentioned starting material for forming the photoreceptive layer. It may be used together with the starting material and contained in the formed layer while controlling its amount.

When the glow discharge method is used to form the layer region (0), a starting material for introducing oxygen atoms is added to one selected as desired from among the starting materials for forming the photoreceptive layer described above. As such a starting material for introducing oxygen atoms, most of the gaseous substances containing at least oxygen atoms or gasified substances that can be gasified can be used.

For example, if a silicon atom (8i) is a constituent atom (NO,
), disiloxane (H
Examples include lower siloxanes such as 1SiO8iH and 08iL (,).

The method of forming the layer region (0) by sputtering is to form a single crystal or multi-A auspicious Si layer during the formation of the photoreceptive layer.
Wafer or 5in2 wafer or Si and 5iQ
This can be carried out by using a wafer containing a mixture of 2 as a target and sputtering them in a divine gas atmosphere.

For example, if an 81 wafer is used as a target, the raw material gas for introducing oxygen atoms and optionally hydrogen atoms and/or halogen atoms is diluted with a diluent gas as necessary, and the material gas is used in a deposition chamber for sputtering. and forming a gas flask of these gases into the SL wafer.
All you have to do is make a fuss.

Alternatively, by using 81 and Sin as separate targets, or by using a mixed target of 81 and Sin, hydrogen atoms ( (1) It can also be achieved by sputtering in a gas atmosphere containing U/ and halogen atoms (X) as constituent atoms. As the raw material gas for introducing oxygen atoms, the raw material gas for introducing oxygen atoms among the raw material gases shown in the glow discharge example described above can be used as an effective gas also in the case of sputtering.

In the present invention, when a general region (0) containing oxygen atoms is provided when forming a photoreceptive layer, the layer region (0)
By changing the distribution concentration C(0) of oxygen atoms contained in the layer in a stepwise manner in the layer thickness direction, a desired distribution shape 9 (d
epth profile), in the case of glow discharge, the distribution concentration C(0)
The starting material gas for introducing oxygen atoms to change the
This is accomplished by introducing the gas into the deposition chamber while appropriately changing the gas flow rate according to a desired rate of change curve.

For example, the opening of a predetermined needle pulp provided in the middle of the gas flow path system may be appropriately changed by any commonly used method such as manual operation or an external drive motor.

When the layer region (0) is formed by sputtering, the distribution concentration C(O) of oxygen atoms in the layer thickness direction is changed stepwise in the layer thickness direction to obtain a desired distribution state of oxygen atoms in the thickness direction. In order to form a depth profile, first, as in the case of the glow emission iL method, a starting material for introducing oxygen atoms is used in a gaseous state, and when the gas is introduced into the deposition chamber, This is accomplished by appropriately changing the gas flow rate as desired.

Second, the target for sputtering is, for example, S
If a target containing a mixture of 1 and Sin is used, the mixing ratio of Si and 5iQ2 is changed in advance in the layer thickness direction of the target.

In the amorphous layer, there is a substance that controls the conduction properties, for example,
To structurally introduce a group Ⅰ atom or a group Ⅰ atom,
During layer formation, the starting material for 4 atoms of group 1 I or the starting material for 4 atoms of group 1 is introduced in gaseous form into the deposition chamber together with other starting materials for forming the photoreceptor layer. Just do it.

As the starting material for such introduction of Group (I) atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, starting materials for such group Ⅰ atoms introduction materials include B2H,, B4H, o,
B, H,, B, H,,.

l361-I,. , B6H, , 13,H, etc., Y3F, , 13C/, .

Examples include boron halides such as 13Br. In addition, AlC1,, GaCJ, , (Ja(CI,),
, InCzl, T/CJ*, etc. can also be mentioned.

In the present invention, the starting materials for introducing Group V atoms that are effectively used for introducing phosphorus atoms are PH,
Hydrogenated phosphorus such as PJ-L, PI-I4I, PIi',
.

PF, , PCI! , , PCI, , PBr,
, , PBr, , PI, etc., include phosphorus halides. In addition, As1-11. AsF, , AS
C/.

AsBr, , AsF3.8bl-1,, SbF,
, SbF, , 5bCz, , 5bCz, .

BiH, B1C15, BIBr, etc. may also be mentioned as useful starting materials for gf, group V atom barrels.

In the present invention, the layer thickness of the layer region constituting the light-receiving layer and containing a substance that controls conduction properties and provided unevenly on the support side is defined as the thickness of the layer region formed on the layer region and the layer region formed on the layer region. The lower limit is preferably 30 Å or more, more preferably 40 Å or more.
It is desirable that the thickness be Å or more, and optimally 1:50λ or more.

Further, when the content of the substance (C) that controls conduction properties contained in the layer region is above 30 atomic p tri, the upper limit of the layer thickness of the layer region is preferably 10 μm or less. , preferably 8μ or less, optimally 5μ or less.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr and stainless steel.

Ajl', Cr, Mo, Au, Nb
, Ta, V, i, 'i, Pt, Pd, or alloys thereof.

Polyester is used as the electrically insulating support.

Polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride.

Films or sheets of synthetic resins such as polyvinylidene chloride, polystyrene, polyamide, etc., and glass.

Ceramic, paper, etc. can usually be used. Preferably, at least one surface of these electrically insulating supports 1#i is subjected to a conductive treatment, and another layer is preferably provided on the conductive treated surface side.

For example, if it is glass, NiCr is applied to its surface.

IJ, Cr, Mo, Au, Ir, Nb, 'll'a,
V, Ti, pt, Pd.

In, 0. , SnO,, ITO (In, α+5n02
), etc.), or if it is a synthetic resin film such as polyester film, NiCr, he, Ag, Pd.
, Zn, Ni, Au.

A thin film of metal such as Cr, Mo, Tr, Nb, Ta, V%Ti, Pt, etc. is provided on the surface 11 by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal, Conductivity is imparted to the surface. The shape of the support is cylindrical.

The shape d may be determined as desired, such as a belt-like 9-plate shape, but for example, if the photoconductive member 100 shown in FIG. In this case, it is desirable to have a thin belt shape or a cylindrical shape. The thickness of the support is determined appropriately so that the desired photoconductive member is formed, but if continuity is required as the light guide section (A),
Support 4) J should be made as thin as possible within the range where the function as an integral part can be fully demonstrated. In such a case, an example of the method for manufacturing the light guide member of the present invention will be briefly described.

An example of the photoconductive member manufacturing equipment f14 is shown in the 16th example.

Gas cylinders 1102 to 1106 in the figure are sealed with raw material gases for forming the photoconductive member of the present invention. As an example, 1102 is a 5il gas (purity 99. 999%.

Hereinafter, it will be abbreviated as S i l-14/fle. ) cylinder, 11
03: Gel gas diluted with Ile (purity 99.9
99X, hereinafter abbreviated as 0cl14/11e. ) cylinder, 1
104 is SiF diluted with lie, gas (purity 999
9%, hereinafter abbreviated as S i F', /lie. ) cylinder, 1105 is a NO gas (purity 99.999X) cylinder, and 1106 is a H gas (purity 99,999X) cylinder.

In order to cause these gases to flow into the reaction chamber 1101 Vc, pulps 1122 to 112 of gas cylinders 1102 to 1106 are used.
6. Make sure that the 'J-k valve 1135 is closed, and check that the inflow pulps 1112-1116, outflow pulps 1117-1121. Auxiliary pulp 1132.

After confirming that the main pulp 1133 is open, the main pulp 1134 is first opened to exhaust the reaction chamber 1101 and each gas pipe. Next, the reading of vacuum gauge 1136 is about 5X
When the pressure reaches 10 torr K, auxiliary pulp 1132
, 1133, close the outflow pulps 1117-1121.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 1137, the gas cylinder 1102 pS
iH, /He gas, from gas cylinder 11o3 (Jew,
/f-1e Gas, NO gas from gas pump 1105. Open pulp 1122, 1123.1124 and check the pressure of outlet pressure gauge 1127.1128.1129.
Adjusted to crA, inflow pulp 1112.1113.11
14 are gradually opened to allow the water to flow into the mass flow controllers 1107, 1108, and 1109, respectively. Subsequently, outflow pulp 1117, 1118, 1119, auxiliary pulp 1
132 is gradually opened to allow each gas to flow into the reaction chamber 1101. At this time, S in, /He gas flow rate and G
The outflow pulp 1117.1118°1119 is adjusted so that the ratio of eH4/He gas flow rate to NO gas flow rate becomes the desired value.
Also, adjust the opening of the main pulp 1134 while checking the reading on the vacuum gauge 1136 so that the pressure inside the reaction chamber 1101 reaches the desired value.

After confirming that the temperature of the substrate 1137 is set to a temperature in the range of 50 to 400°C by the heater 1138, the power source 1140 is set to the desired power to generate glow discharge in the reaction chamber 1101. At the same time, the flow rate of NO gas is controlled manually or by an external drive motor, etc., according to a pre-designed small curve of change in the pulp 11.
The distribution of oxygen atoms contained in the layer to be formed is controlled by appropriately changing the openings 18.

Further, a zero or less embodiment will be described in which it is desirable that the substrate 1137 be rotated at a constant speed by a motor 1139 during layer formation in order to ensure uniform J-formation.

Example 1 A cylindrical IV was manufactured using the manufacturing apparatus shown in FIG.
Samples (samples //611-1 to 13-6) as electrophotographic image forming members were prepared on a substrate under the conditions shown in Table 1 (Table 2).

Distribution concentration of germanium atoms in each sample! J.
The 17th IK and the oxygen atom content distribution concentration are shown in FIG.

Place each sample obtained in this way in a charging exposure experiment device.■5. The entire corona zone was scanned for 0.3 See with OKV, and a light image was immediately irradiated. A light image was generated using a tungsten lamp light source, and a light intensity of 21 ux-sec was irradiated through a transmission type test chart.

Immediately thereafter, a good toner image was obtained on the surface of the imaging member by cascading an electrolyte developer (containing toner and carrier) over the surface of the imaging member.
The toner image on the image forming member is processed by 5. When transferred onto transfer paper using OKV's corona charging, clear, high-density images with excellent resolution and good gradation reproducibility were obtained in all samples.

In the above, the light source is 81 instead of a tungsten lamp.
The image quality of the toner transfer image was evaluated for each sample under the same toner image forming conditions, except that electrostatic light was formed using a Qnm GaAs-based semiconductor laser (10 mW). In all samples, clear, high-quality images with excellent resolution and good gradation reproducibility were obtained.

Example 2 Figure 16 shows a cylinder-shaped M
Samples (Samples/1621-1 to 23-6) as electrophotographic image forming members were prepared on a substrate under the conditions shown in Table 3 (Table 4).Germanium atom content in each sample The distributed concentration is shown in FIG. 17, and the distributed concentration of 1-$ element atoms is shown in FIG.

For each of these samples, I[! ]
When we conducted a test of one popular song, all samples had
H7i quality toner transfer II! The Il image was given. Also, for each sample, the environmental Q of 38°C and 80% ftH was 20
A million times! When the use test was conducted three times, no deterioration in 1111 image quality was observed in any of the samples.

Table 2, Table 4 Common layer forming conditions in the embodiments of the present invention described above are shown below.

Base temperature lf Gel, layer containing nium atoms (Ge) ・・・・・・・・・Approx. 2 (〕O℃) Germanium atom (Gc)-free layer ・・・・・・・・・・・・About 250℃ Discharge frequency: 13.56Mk-Iz Reaction and reaction chamber pressure 0.3’J’orr

[Brief explanation of the drawing]

FIG. 1 is a schematic layer structure diagram for explaining the layer structure of the photoconductive member of the present invention, and FIGS. 2 to 10 are illustrations for explaining the distribution state of germanium atoms in the photoreceptive layer, respectively. figure,
11 to 15 are for explaining the distribution state of oxygen atoms in the photoreceptive layer, respectively; FIG. 16 is a schematic illustration of the device used in the present invention, and FIG. , 18th
The figures are distribution state diagrams showing the content distribution temperature state of each atom in each example of the present invention. Person Gyanon Co., Ltd. 00 LC (Jaxt.G.) (1703> Procedural amendment (voluntary) November 2, 1981 1 Indication of the case 1981 Patent application No. 152776 2 Name of the invention Photoconductive member 3 Amendment Relationship with the Personnel Inquiry Residence of the Patent Applicant's 4 Agents (7) 146 3-30 Shimomaruko, Oguchi, Tokyo
25. Subject of amendment (1) Specification 6. Contents of amendment (1) The following is inserted after line 15 of page 43 of the specification. The raw material gas described above, the raw material gas whose constituent atoms are oxygen atoms (0), and the raw material gas whose constituent atoms are hydrogen atoms (H) or halogen atoms (X) as necessary are mixed at a desired mixing ratio. Alternatively, a raw material gas containing silicon atoms (Sl) and oxygen atoms (0) and hydrogen atoms (
H) and a raw material gas whose constituent atoms are also mixed at a desired mixing ratio, or a raw material gas whose constituent atoms are silicon atoms (Sl) and silicon atoms (Si). A raw material gas having six constituent atoms, oxygen atoms (0) and hydrogen atoms (H), can be mixed and used. Alternatively, a raw material gas containing oxygen atoms (0) as constituent atoms may be mixed with a raw material gas containing silicon atoms (Sl) and hydrogen atoms (CH) as constituent atoms. Specifically, for example, oxygen (02) and ozone (03).

Claims (1)

[Scope of Claims] ill A support for a photoconductive member, and a photoreceptive layer that exhibits photoconductivity and is made of an amorphous material containing silicon atoms and germanium atoms, and the photoreceptor layer has photoconductivity. contains oxygen atoms, and the distribution concentration in the layer thickness direction is C(t).
, C(3), a photoconductive member characterized by having a first layer region, a third layer region, and a second layer region of C(21) in this order from the support side (however, C(31 alone will not reach the maximum, and C11l, C(21, C
(If any one of 81 is 0, the other two are 0.
Not and not equal. (2) The photoconductive member according to claim 1, wherein the photoreceptive layer contains hydrogen atoms. (3) The photoconductive member according to claims 1 and 2, wherein the photoreceptive layer contains halogen atoms. (4) The photoconductive member according to claim 1, wherein the distribution state of germanium atoms in the photoreceptive layer is non-uniform in the layer thickness direction. (1) The photoconductive member according to claim 1, wherein the distribution state of germanium atoms in the photoreceptive layer is uniform in the layer thickness direction. (6) The photoconductive member according to claim 1, wherein the photoreceptive layer contains a substance that controls conductivity. (7) The photoconductive member according to claim 11ii2, item 6, wherein the substance that governs conductivity is an atom belonging to group Ⅰ of the periodic table. (8) The photoconductive member according to claim 6, wherein the substance that controls conductivity is an atom belonging to Group V of the periodic table.