JPS6046319A - Preparation of one directional silicon steel plate - Google Patents

Preparation of one directional silicon steel plate

Info

Publication number
JPS6046319A
JPS6046319A JP58152667A JP15266783A JPS6046319A JP S6046319 A JPS6046319 A JP S6046319A JP 58152667 A JP58152667 A JP 58152667A JP 15266783 A JP15266783 A JP 15266783A JP S6046319 A JPS6046319 A JP S6046319A
Authority
JP
Japan
Prior art keywords
annealing
recrystallization
silicon steel
cold rolling
intermediate annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58152667A
Other languages
Japanese (ja)
Inventor
Katsuo Iwamoto
岩本 勝生
Yoshiaki Iida
飯田 嘉明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP58152667A priority Critical patent/JPS6046319A/en
Publication of JPS6046319A publication Critical patent/JPS6046319A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment
    • C21D8/12Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/04General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering with simultaneous application of supersonic waves, magnetic or electric fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Soft Magnetic Materials (AREA)
  • Manufacturing Of Steel Electrode Plates (AREA)

Abstract

PURPOSE:To impart excellent magnetic characteristics, in applying intermediate annealing to a silicon steel slab containing a specific amount of C, Si, Mn and one or more of S and Se before final cold rolling, by imparting an AC magnetic field with a specific value or more in the recrystallization initial stage thereof. CONSTITUTION:On a wt% basis, 0.025-0.1 C, 2.5-4 Si, 0.02-0.15 Mn and 0.003-0.08 one or more of S and Se are contained in a silicon steel slab. This steel slab is hot rolled and two times of cold rollings interposing intermediate annealing at 750-1,100 deg.C are applied to the hot rolled plate and a draft in the final cold rolling among two times of cold rollings is set to 40-80% to obtain a predetermined plate thickness. This cold rolled plate is subjected to decarburizing annealing and final annealing to obtain a one directional silicon steel plate. In performing intermediate annealing before final cold rolling, an AC magnetic field with 100 oersted or more is applied to the steel plate in parallel to the rolling direction thereof at the initial stage of recrystallization.

Description

【発明の詳細な説明】 この発明は圧延方向に磁化容易軸である〈100〉軸を
有する磁気特性の優れた一方向性珪素鋼板の製造方法に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a unidirectional silicon steel sheet having excellent magnetic properties and having a <100> axis, which is an axis of easy magnetization, in the rolling direction.

周知のように一方向性珪素鋼板は主として変圧器その他
の電気機器の鉄芯に使用されるものであり、近年の省エ
ネルギー、省資源への強い要請から、変圧器等の電気機
器の電力損失低減、効率化が重視されるようになり、そ
れに伴って鉄芯材料である一方向性珪素鋼板に対しても
磁気特性が一段と優れていることが要求されるようにな
っている。このような一方向性珪素円板の磁気特性とし
ては、励磁特性として磁束密度Blo値(磁場の強さが
100OA/mのとき発生する圧延方向の磁束密度)で
1,857 (テスラ)に1.上、鉄損特性として板厚
0.11の一方向性珪素鋼板においてW17150値(
交流50Hz、磁束密度1.7T テ(7)鉄損値)で
1,20W/ kgに1.下が必要とされており、特に
鉄損特性は近年著しく改善されて、W 17750値が
1.10 W /kQ以下の優れたものも実現されてい
る。
As is well known, unidirectional silicon steel sheets are mainly used for the iron cores of transformers and other electrical equipment, and due to the strong demand for energy and resource conservation in recent years, they are being used to reduce power loss in electrical equipment such as transformers. As more emphasis has been placed on efficiency, the unidirectional silicon steel plate used as the iron core material is also required to have even better magnetic properties. As for the magnetic properties of such a unidirectional silicon disk, the magnetic flux density Blo value (magnetic flux density in the rolling direction generated when the magnetic field strength is 100 OA/m) is 1,857 (Tesla) as the excitation property. .. Above, W17150 value (
1.20W/kg at AC 50Hz, magnetic flux density 1.7T (te (7) iron loss value). In particular, iron loss characteristics have been significantly improved in recent years, and excellent products with a W 17750 value of 1.10 W /kQ or less have been realized.

このような優れた磁気特性を有する一方向性珪素鋼板を
製造するためには、その一連の製造工程のうち最終焼鈍
において2次再結晶を完全に発達させて、いわゆるゴス
方位と称される(110)[001]方位の2次再結晶
粒が先鋭に揃った集合FA織とする必要がある。そのた
めには、周知のように2次再結晶過程で(110)[0
01]方位以外の好ましくない方位を有する1次再結晶
粒の成長を強く抑制するためのインヒビターの存在が不
可欠である。このようなインヒビターとしては、通常は
L(n S 、)Jn S e 、あるいは△QN等の
微細析出物が用いられており、主として熱延工程でそれ
らのインヒビターの微細析出物を調整することにより強
い1次再結晶粒成長抑制効果を発揮させることが行われ
ている。また最近では上述のJ:うな微細析出物に加え
て、粒界偏析型元素である86、Bi 、Sn、Pb、
Te等を添加して結晶粒成長抑制効果を補強する方法も
採用され、インヒビターの役割を充分に発揮させ得るに
至っている。
In order to manufacture unidirectional silicon steel sheets with such excellent magnetic properties, secondary recrystallization is completely developed in the final annealing of the series of manufacturing steps, so that the so-called Goss orientation ( 110) It is necessary to have an aggregated FA weave in which the secondary recrystallized grains in the [001] orientation are sharply aligned. To achieve this, as is well known, the secondary recrystallization process (110)[0
The presence of an inhibitor to strongly suppress the growth of primary recrystallized grains having unfavorable orientations other than the [01] orientation is essential. As such inhibitors, fine precipitates such as L(n S , )Jn S e or △QN are usually used, and by adjusting the fine precipitates of these inhibitors mainly in the hot rolling process, Efforts have been made to exert a strong primary recrystallized grain growth suppressing effect. Recently, in addition to the above-mentioned J: Una fine precipitates, grain boundary segregation type elements such as 86, Bi, Sn, Pb,
A method of reinforcing the effect of suppressing crystal grain growth by adding Te or the like has also been adopted, and the role of an inhibitor has been brought to full play.

また(110)[001]方位の2次再結晶粒を先鋭に
発達させるためには、前述のようなインヒビターの存在
のみならず、最終焼鈍前の鋼板に、(110)[001
]方位の2次再結晶粒が優先的に核発生しかつ成長でき
るような適切な1次再結晶集合組織を形成しておくこと
が不可欠である。
In addition, in order to sharply develop secondary recrystallized grains with the (110)[001] orientation, it is necessary not only to have the inhibitor as described above, but also to
] It is essential to form an appropriate primary recrystallized texture so that secondary recrystallized grains in the orientation can preferentially nucleate and grow.

このような適切な1次再結晶集合組織は、一方向性珪素
鋼板の一連の複雑な製造■稈において、熱延工程から冷
延工程に至る各工程条件を適切に組合わせて初めて得ら
れるものであり、特にインヒビターの抑制効果の大きさ
に応じた最終冷延圧下率の選択が重要である。例えばイ
ンヒビターとしてkins、)、!nseを用いる場合
には、最I?’i冷延圧下率は40〜80%の範囲内が
適当であり、このときの1次再結晶集合組織は、(11
0)[001]方位が強く集積して、副方位として弱い
(111)<112>方位が分布するような状態が最適
であることが知られている。しかしながら上述のような
適切な1次再結晶集合組織の形成のために必要な最終冷
延圧下率以外の各工程条件については未だ充分に確立さ
れているとは言えず、したがって未だ改善の余地があっ
たのが実情である。
Such an appropriate primary recrystallization texture can only be obtained by appropriately combining each process condition from the hot rolling process to the cold rolling process during the complex manufacturing process of unidirectional silicon steel sheets. Therefore, it is particularly important to select the final cold rolling reduction according to the magnitude of the suppressing effect of the inhibitor. For example, kins as an inhibitor, ),! When using nse, the most I? 'i The appropriate cold rolling reduction is within the range of 40 to 80%, and the primary recrystallization texture at this time is (11
It is known that the optimal state is such that the 0)[001] orientation is strongly concentrated and the weak (111)<112> orientation is distributed as sub-directions. However, the process conditions other than the final cold rolling reduction necessary for the formation of an appropriate primary recrystallization texture as mentioned above have not yet been fully established, and therefore there is still room for improvement. The reality is that there was.

したがってこの発明の目的は、従来よりもさらに一段と
好適な1次再結晶集合組織を得るべく工程条件を改善し
て、従来よりも一層優れた磁気特性を有する一方向性珪
素銀板を安定して能率的かつ経済的に工業生産しiqる
方法を提供することを目的とするものである。
Therefore, an object of the present invention is to improve process conditions in order to obtain a primary recrystallization texture that is even more suitable than before, and to stably produce a unidirectional silicon silver plate that has better magnetic properties than before. The purpose is to provide an efficient and economical method for industrial production.

本発明者は上述の目的を達成するべく、特に2回の冷延
工程における最終冷延前の中間焼鈍工程に着目して種々
・検討を重ねた結果、その中間焼鈍おける昇温過程初期
段階、すなわち銅板の再結晶初期段階で交流磁場を与え
ることによって、最終焼鈍工程で(110)[001]
方位の2次再結晶粒を核生成、発達させるに適した最適
な1次再結晶集合組械が得られ、その結果最終的に優れ
た磁気特性を有する一方向性珪素鋼板が得られることを
見出し、この発明をなすに至ったのである。
In order to achieve the above-mentioned object, the present inventor has conducted various studies focusing on the intermediate annealing step before the final cold rolling in the two cold rolling steps, and found that the initial stage of the heating process in the intermediate annealing, That is, by applying an alternating magnetic field at the initial stage of recrystallization of the copper plate, (110)[001]
It has been shown that an optimal primary recrystallization assembly suitable for nucleating and developing oriented secondary recrystallized grains can be obtained, and as a result, a unidirectional silicon steel sheet with excellent magnetic properties can be obtained. This discovery led to this invention.

すなわちこの発明の要旨は、基本的にはCO,025〜
0.10%、3i 2.5〜4.0%、Mn O,02
〜0.15%を含有しかつS、Seのいずれか1種また
は2種を合計量で0.008〜0.080%含有する珪
素鋼スラブを熱間圧延する工程と、その熱延板に対して
750〜1100℃の温度節−囲内での中間焼鈍を挾む
2回の冷間圧延を施し、かつその2回の冷間圧延のうち
最終冷間圧延における圧下率を40〜80%として所定
の板厚に仕上げる工程と、その冷延板に脱炭焼鈍および
R柊焼鈍を滴す工程とを有してなる一方向性珪素鋼板の
製造方法において。
That is, the gist of this invention is basically that CO,025~
0.10%, 3i 2.5-4.0%, MnO,02
A process of hot rolling a silicon steel slab containing ~0.15% and one or both of S and Se in a total amount of 0.008 to 0.080%; On the other hand, cold rolling is performed twice with intermediate annealing at a temperature range of 750 to 1100°C, and the reduction rate in the final cold rolling of the two cold rolling is set to 40 to 80%. In a method for producing a grain-oriented silicon steel sheet, the method comprises a step of finishing the sheet to a predetermined thickness, and a step of applying decarburization annealing and R-holly annealing to the cold-rolled sheet.

前記最終冷間圧延前の中間焼鈍■稈における再結晶初期
段階の500℃以上磁気変態点以下の温度範囲内におい
て100エルステツド(Oe)以上の交流磁場を鋼板の
圧延方向に平行に付与することを特徴とするものである
Intermediate annealing before the final cold rolling (1) Applying an alternating current magnetic field of 100 oersted (Oe) or more in parallel to the rolling direction of the steel sheet within a temperature range of 500 ° C. or more and below the magnetic transformation point in the initial stage of recrystallization in the culm. This is a characteristic feature.

以下この発明の方法を詳細に説明づる。The method of this invention will be explained in detail below.

先ずこの発明の方法において使用される珪素鋼スラブ素
材の成分限定理由を説明する。
First, the reasons for limiting the composition of the silicon steel slab material used in the method of the present invention will be explained.

Cは、熱延中の特定温度領域で所定組以上のγ相を形成
せしめることにより素材スラブの高温加熱時に粗大成長
した結晶粒をS延工程で分裂・破壊させるために必要な
成分であり、0.025%以下では必要mのγ相りが確
保されず、他方0.10%を越えれば最終焼鈍前の脱炭
が著しく困難となり、長時間の脱炭焼鈍が必要となって
経済的ではなく、したがって0.025 ヘ−0,10
%の範囲内に限定づる必要がある。
C is a necessary component in order to split and destroy crystal grains that have grown coarsely during high temperature heating of the material slab in the S rolling process by forming γ phase of a predetermined number or more in a specific temperature range during hot rolling, If it is less than 0.025%, the required m gamma phase cannot be ensured, and if it exceeds 0.10%, decarburization before final annealing becomes extremely difficult, requiring long decarburization annealing, which is not economical. Therefore, 0.025 h - 0,10
It is necessary to limit it within the range of %.

Siは比抵抗を高めて鉄損を低減させるために必要な元
素であり、2.5%より低ければ充分に低い鉄損が得ら
れず、一方4.0%を越えれば著しく脆くなって冷延加
工性が乏しくなり、通富の工業的圧延が困難になるから
、Siは2.5−4.0%の範囲内にする必要がある。
Si is an element necessary to increase resistivity and reduce iron loss. If it is less than 2.5%, it will not be possible to obtain a sufficiently low iron loss, while if it exceeds 4.0%, it will become extremely brittle and difficult to cool. The Si content must be within the range of 2.5% to 4.0% because the workability becomes poor and industrial rolling becomes difficult.

)Jn、S、Seはいずれもインヒビターとして2次再
結晶過程において(110)[001]方位以外の好ま
しくない1次再結晶粒の成長を1lli制し、(110
)[001]方位の2次再結晶粒を充分に発達させるた
めに必要な成分であり、上記成分範囲を外れると充分な
インヒビターの効果が得られなくなるので、Mn O,
02〜0.15%、s、seはいずれか1種または2種
の合計で0.008〜0.080%の範囲にする必要が
ある。
) Jn, S, and Se all serve as inhibitors to suppress the growth of unfavorable primary recrystallized grains other than the (110) [001] orientation in the secondary recrystallization process, and (110
) It is a necessary component to sufficiently develop secondary recrystallized grains with the [001] orientation, and if it is outside the above range, a sufficient inhibitor effect will not be obtained, so MnO,
02 to 0.15%, and s and se need to be in the range of 0.008 to 0.080% either alone or in combination.

前記必須成分のほかに必要に応じてインヒビターの効果
を補強する目的で粒界偏析型元素、例えば3b、As、
Bi、pb、Te、14a、W等を単独または複合して
上記素材に添加することは鐙支えない。しかしながら、
これら粒界偏析型元素を添加しても適切な最終冷延圧下
率が80%を越えるような場合にはこの発明の1次再結
晶集合組座改善の効果は消失するので、不必要な添加は
避けるべきである。
In addition to the above-mentioned essential components, grain boundary segregation type elements such as 3b, As,
Adding Bi, pb, Te, 14a, W, etc. alone or in combination to the above material is not supported. however,
Even if these grain boundary segregation type elements are added, if the appropriate final cold rolling reduction exceeds 80%, the effect of improving the primary recrystallization aggregate structure of this invention disappears, so unnecessary addition is unnecessary. should be avoided.

次に上述のような成分を有する素材に対し、圧延、熱!
2!l理を施すこの発明の各1稈条件について説明する
Next, the material with the above-mentioned components is rolled, heated!
2! The conditions for each single culm in this invention will be explained.

先ず上記成分条件を満たすスラブに対しては、1250
″C程度以上の高温加熱後、公知の熱間圧延を施して板
厚1,5〜5.Ommの熱延板とするっこの熱延工程で
は、インヒビターMI+S、Vaseの微細析出物を得
るために、前記スラブ高温加熱温度は)Jn、S、Se
が充分に解離固溶できるよう これらの成分含有量に応
じて適切に設定すべきであり、次いで熱延方法を適正に
選択してインヒビターの微細析出を充分に促進すること
が肝要である。
First, for slabs that meet the above component conditions, 1250
After heating at a high temperature of about C or higher, a hot rolled sheet with a thickness of 1.5 to 5.0 mm is obtained by performing known hot rolling.In this hot rolling process, in order to obtain fine precipitates of inhibitors MI+S and Vase. , the slab high temperature heating temperature is) Jn, S, Se
The content of these components should be appropriately set so that they can be sufficiently dissociated into solid solution, and then it is important to appropriately select the hot rolling method to sufficiently promote fine precipitation of the inhibitor.

熱延板に対しては、必要に応じてノルマライジング焼鈍
を施し、酸洗後、中間焼鈍を挾む2回の冷間圧延を施し
最終板厚に仕上げる。中間焼鈍は第1回冷延後の冷延組
織を再結晶させ、結晶組織の均一化を促し、あわせて鋼
中にCを充分固溶させる目的で施す。従って、中間焼鈍
温度は750℃以上が必要であるが、1100℃を越え
るとインヒビター)JnS、MnSeの微細析出物が粗
大化されて抑制効果が低下するので750〜1100℃
の温度範囲に限定する必要がある。
The hot-rolled sheet is subjected to normalizing annealing if necessary, and after pickling, cold rolling is performed twice with intermediate annealing in between to achieve the final thickness. Intermediate annealing is performed for the purpose of recrystallizing the cold-rolled structure after the first cold rolling, promoting uniformity of the crystal structure, and at the same time, sufficiently dissolving C into the steel. Therefore, the intermediate annealing temperature needs to be 750°C or higher, but if it exceeds 1100°C, the fine precipitates of the inhibitors (JnS and MnSe) will become coarse and the suppressing effect will decrease.
temperature range.

この発明の方法においては、上述のような中間焼鈍工程
において、その中間焼鈍の昇温途中における鋼板の再結
晶初期段階の500′C以上磁気変態点以下の温度範囲
内で100oe以上の交流磁場を鋼板の圧延方向に平行
に付与し、これにより再結晶集合組織を改善することが
基本的な特徴である。このような条件は本発明者専の詳
細に実験により新規に知見されたことであり、これらの
条件について以下本発明者等の実験データに基いて説明
する。
In the method of the present invention, in the intermediate annealing step as described above, an alternating current magnetic field of 100 oe or more is applied within a temperature range of 500'C or more and below the magnetic transformation point during the initial stage of recrystallization of the steel sheet during the temperature rise of the intermediate annealing. The basic feature is that it is applied parallel to the rolling direction of the steel sheet, thereby improving the recrystallization texture. These conditions were newly discovered through detailed experiments conducted exclusively by the present inventors, and these conditions will be explained below based on the experimental data of the present inventors.

第1図には、最終冷延前の中間焼鈍工程で、そのA温冷
中の再結晶初期の500℃以上磁気変態点以下の;)ネ
度範Llで100oe[上の交流磁場を付与した場合(
本発明法)、ゐよび従来の通粛の工程に従って72流磁
j1な付与しなノブつだ場合について、昇温過程で再結
晶率および(1’i 0 >面、(220)面X線回折
強度を調べた結果を承り。
Figure 1 shows that in the intermediate annealing step before the final cold rolling, an alternating current magnetic field of 100 oe [over 500°C and below the magnetic transformation point; case(
(method of the present invention), and in the case of using a knob without imparting 72 current magnetic j1 according to the conventional process, the recrystallization rate and (1'i 0 > plane, (220) plane X-ray We received the results of examining the diffraction intensity.

第1冒から明らかなにうに、交流磁場を印加し7よい従
来ン去ではA)昼j尽稈において再♀占品7)’ +)
’] 700℃で開始されているのに対し、交流隘jパ
を11】加した本発明法で1よ再結晶が従来2人の場合
よりし約100℃低い600 ’Cで始ってJjす、ぞ
しC再結晶開始とと−もに(”!10)面X線(セ富瓜
が6偵まり、がつ(222)面X線扁密氏が弱くなる傾
向が明確にあられれていイ2.ぞしC再結晶後の(1’
i o)面×翔極密度は木光明法の場合従来法と比べて
一段と弥よって、再結晶集合組織が改善されCいること
が朗らかである。すなわち、一般に再結晶形成初期段階
においては、(1’l O)方位のゴスiηは低温側で
発生すると言われているが、本発明法ではより低温側で
再結晶核を発生させるとともにゴス粒生成を促進させ、
最終冷延前の段階でゴス方位集積度を一段と強めた再結
晶集合組織に改善することができるのである。
As is clear from the first part, when applying an alternating magnetic field and using conventional methods, A) re-occupation at the end of the day.7)' +)
'] In contrast, in the method of the present invention in which an alternating current filter is added, recrystallization starts at 600'C, which is approximately 100°C lower than in the conventional case of two people. With the start of C recrystallization, there was a clear tendency for the (!10) plane X-rays (Sefuyu to 6) and the (222) plane X-rays to become weaker. 2. After C recrystallization (1'
io) The surface x polar density is much higher in the case of the Kikomei method than in the conventional method, and it is clear that the recrystallization texture is improved. That is, in the initial stage of recrystallization formation, it is generally said that (1'l O)-oriented Goss iη is generated on the low temperature side, but in the method of the present invention, recrystallization nuclei are generated on the lower temperature side and Goss grains are Promote the generation of
It is possible to improve the recrystallization texture to a further strengthened Goss orientation integration degree before the final cold rolling.

以上のように本発明者等は、最終冷延前の中間焼鈍にお
いて、昇温過程での初期段階で交流磁場を付与すること
によって、より低温で再結晶を喚起し、ゴス方位の先鋭
化を促進させて再結晶集合組織を改善し、最終的にこの
発明の目的とする磁気特性の優れた製品が得られること
を新規に知見したのである。
As described above, the present inventors applied an alternating magnetic field during the intermediate annealing before the final cold rolling in the initial stage of the heating process to induce recrystallization at a lower temperature and to sharpen the Goss orientation. It was newly discovered that by accelerating the recrystallization, the recrystallization texture can be improved, and a product with excellent magnetic properties, which is the object of the present invention, can finally be obtained.

ここで、この発明において中間焼鈍での!1#A付与温
度範囲を、再結晶初期段階の500℃以上磁気変態点以
下に限定した理由は次の通りである。
Here, in this invention, intermediate annealing! The reason why the temperature range for applying 1#A was limited to 500° C. or higher and lower than the magnetic transformation point at the initial stage of recrystallization is as follows.

すなわち、連続焼鈍による昇温途中での再結晶挙動を透
″3[子顕微鎖や光学顕微鏡を用いて観察すれば、板温
か550℃前後に達した時に再結晶核発生が誘起され、
650℃前後で再結晶が始まり、その後750℃前後で
再結晶が完了する。500℃未満の温度域で磁場を付与
しても再結晶には全く影響がなく、一方この発明で対象
とする9i 2,5〜4.0%の閘の磁気変態点は再結
晶完了潤度に近い730〜750℃付近であってかつ磁
気変態点以上では鋼板になんらlB54が影響を与えな
いから、交流r7A場付与は500”C以上磁気変態点
以下とした。
In other words, if the recrystallization behavior during the temperature increase during continuous annealing is observed using a transparent microscope or an optical microscope, recrystallization nucleation is induced when the plate temperature reaches around 550°C.
Recrystallization begins at around 650°C and then completes at around 750°C. Applying a magnetic field in a temperature range below 500°C has no effect on recrystallization at all; on the other hand, the magnetic transformation point of the 9i 2.5% to 4.0% lock, which is the subject of this invention, is the moisture content at which recrystallization is completed. Since lB54 has no effect on the steel plate at temperatures close to 730-750° C. and above the magnetic transformation point, the alternating current r7A field was applied at temperatures above 500”C and below the magnetic transformation point.

なお交流磁場は500 ’Cから磁気変態点までの全温
領域にわたって付与することが最も望ましいが、必ずし
もその全域にわたって磁場を付与する必要(まなく、例
えば前記の温度領域のうち、550′Cから700℃ま
での範囲、あるいは500″Cから650℃までの範囲
のI〕において磁場を付与しても良く、その場合でもそ
れに応じた効果が得られる。但し、前記温度域のうち、
少なくとも550〜650℃の範囲では必ず磁場を付与
しておくことが望ましい。
It is most desirable to apply the AC magnetic field over the entire temperature range from 500'C to the magnetic transformation point, but it is not necessarily necessary to apply the magnetic field over the entire temperature range (for example, from 550'C to the temperature range mentioned above). A magnetic field may be applied in a range up to 700°C, or in a range from 500″C to 650°C, and even in that case, a corresponding effect can be obtained.However, among the above temperature ranges,
It is desirable to apply a magnetic field at least in the range of 550 to 650°C.

さらに木究明壱等は、最終冷延前の中間焼鈍の昇温過程
で交gtl’A場を付与することが磁気特性の向上と安
定化に有効である理由についてiaM検討するために次
のような実験を行なった。
In addition, Kikyuichi et al. carried out the following in order to investigate why applying an alternating GTL'A field during the heating process of intermediate annealing before final cold rolling is effective in improving and stabilizing magnetic properties. We conducted an experiment.

実験に用いた素材は、9i 2,8〜3.1%およびS
i3.3〜3.5%2群のSi含有量であって、かつこ
れに対応するC量が1150℃平衡状態におけるγ層生
成jが10〜30%に相当する範囲にあり、ざらにMn
 O,06%、3 e O,025%、Sム 0,02
5%、を含有し、通常の製鋼、連鋳、熱延工程を経て仕
上げた板厚3.Ommの熱延板である。このような熱延
板を950℃×1分間の焼鈍後、酸洗して第1回冷間圧
延を施して中間板厚0.75m5となし、950℃×2
分間の中間焼鈍後、圧下率60%で最終冷間圧延を施し
、最終板厚0.30mmに仕上げた。次いで800℃の
湿水素中で5分間の脱炭焼鈍を施し、焼鈍分離材として
のMgOを塗布後、最終焼鈍として、昇温過程において
860℃で30時間保定する2次再結晶組織を充分に発
達させるための処理と、更に昇温しで1200℃で10
時間保定する鋼中不純物除去のための純化処理とを組合
わせて行ない、最終的に一方向性珪素鋼板の製品を得た
。この工程中、中間焼鈍の昇温過程での再結晶初期の5
00℃以上磁気変態点以下の温度域においてV!i場の
強さをO〜1000oe以上まで変化させて銅板の圧延
方向に平行に交流IBを付tjシた。その交流磁場の強
さど最終■品の力性、≦1−なわちB10値および鉄損
W17 / 50との間係を)(2図に示す。
The materials used in the experiment were 9i 2.8-3.1% and S
i 3.3-3.5% The Si content of the second group, and the corresponding C amount is in the range corresponding to γ layer formation j in the equilibrium state of 1150 ° C. 10-30%, and roughly Mn
O,06%, 3 e O,025%, Smu 0,02
5%, and finished through normal steelmaking, continuous casting, and hot rolling processes with a thickness of 3. It is a hot-rolled sheet of Omm. After annealing such a hot-rolled plate at 950°C for 1 minute, it was pickled and cold-rolled for the first time to give an intermediate plate thickness of 0.75m5, and then rolled at 950°C for 2 minutes.
After intermediate annealing for 1 minute, final cold rolling was performed at a reduction rate of 60% to give a final plate thickness of 0.30 mm. Next, decarburization annealing was performed for 5 minutes in wet hydrogen at 800°C, and after applying MgO as an annealing separation material, the secondary recrystallized structure was sufficiently maintained at 860°C for 30 hours during the temperature raising process as final annealing. Treatment for development and further heating at 1200℃ for 10
This was combined with a purification treatment to remove impurities in the steel over a period of time, and a unidirectional silicon steel sheet product was finally obtained. During this process, the initial stage of recrystallization during the temperature increase process of intermediate annealing
V! in the temperature range of 00℃ or higher and lower than the magnetic transformation point! AC IB was applied parallel to the rolling direction of the copper plate by varying the strength of the i-field from 0 to 1000 oe or more. The relationship between the strength of the alternating magnetic field and the final strength of the product, ≦1 - that is, the B10 value and the iron loss W17/50, is shown in Figure 2.

第2図に示すように、白丸で示した9i 2.8−3.
1%の詳および黒丸て示したSi 3.2〜3.596
”の多数の供試料を用いて実験を行なった結末、い号゛
れのSi含有悩のものでも遊場の強さが100aplン
上の場合に一段と浸れた巴気特11が17られ、交2ζ
磁場が100oc以下の場合に1)1、交流磁場の何句
は製品磁気特性向上にほとんど影響を与えないことが見
出された。したがってこの賢明では交流磁場の強さを”
!0Ooeとしたつ なお交流磁場の発生方法として(j、公IIのソレノイ
ド法、電磁石法などがあり、設慨費や翰持費等の面から
最適なものを23へば良い。また中間焼鈍工程にJ3い
て8(叛に印加1゛る交流磁場の方向(よ、鋼板の圧延
方向に平行とすれば良い。
As shown in FIG. 2, 9i 2.8-3.
1% details and black circles indicate Si 3.2-3.596
As a result of conducting experiments using a large number of test samples, it was found that even with the Si-containing sample of the same name, the strength of the play field was 100 apl or more, and the strength of the material 11 was even higher. 2ζ
It was found that when the magnetic field is 100 oc or less, 1) 1) the alternating current magnetic field has almost no effect on improving the magnetic properties of the product; Therefore, in this sense, the strength of the alternating magnetic field is
! Methods for generating a continuous alternating current magnetic field at 0 Ooe include the solenoid method, electromagnet method, etc., and it is best to select the most suitable method in terms of installation costs and carrying costs. Also, the intermediate annealing process J3 and 8 (the direction of the alternating current magnetic field applied to the opposite direction) may be parallel to the rolling direction of the steel plate.

以上のようにして中間焼鈍を終了した板は最終冷延を圧
下率40〜80%の範囲内で論し、目的とする最終板厚
0.15〜0.501181に仕上げる。このように最
終冷延圧下率を40〜80%に限定したのは次の理由に
よる。すなわち、この発明においては、中間焼鈍後の0
円を調整することにより結晶組織を均一化し、1次再結
晶組織に(110)[001]方位の集積を促すのであ
るが、この効果は40%未満もしくは80%を越す最終
冷延圧下率では達成できず、40〜80%の最終冷延圧
下率範囲において初めて達成できるのである。
The plate that has undergone intermediate annealing as described above is subjected to final cold rolling at a reduction rate of 40 to 80%, and is finished to a target final plate thickness of 0.15 to 0.501181. The reason why the final cold rolling reduction is limited to 40 to 80% is as follows. That is, in this invention, 0 after intermediate annealing
By adjusting the circles, the crystal structure is made uniform and the (110)[001] orientation is encouraged to accumulate in the primary recrystallized structure, but this effect is not effective at a final cold rolling reduction of less than 40% or more than 80%. However, it can only be achieved in the final cold rolling reduction range of 40 to 80%.

次いで最終冷延板に対し、湿水素雰囲気中で750〜8
50℃の温度範囲で脱炭焼鈍を痛し、CDが0.003
%以下となるまで充分に脱炭する。その後、MgO等の
焼鈍分離剤を塗布した後、最終焼鈍を施す。この最終焼
鈍は(110)[001]方位の2次再結晶を充分に成
長発達させ、同時に鋼板中にインヒビターとして添加し
たs、seその他N等の不純物元素を純化除去する目的
で浦される。この最終焼鈍は、通常は箱焼鈍によって1
000℃以上の高温に昇温して行われるが、本出願人の
提案に係る特公昭51−13469号の方法にしたがい
、2次再結晶が生起する820〜920℃の温度範囲に
約101I間以上保持して2次再結晶粒を充分に成長さ
せた後、引続き1000℃以上の高温における不純物除
去を目的とする純化焼鈍を施す方法を採ることが望まし
い。
Next, the final cold-rolled sheet was heated to 750 to 8 in a wet hydrogen atmosphere.
Decarburization annealing is performed in a temperature range of 50℃, and the CD is 0.003.
% or less. Then, after applying an annealing separator such as MgO, final annealing is performed. This final annealing is performed for the purpose of sufficiently growing and developing secondary recrystallization in the (110)[001] orientation, and at the same time purifying and removing impurity elements such as s, se, and N added as inhibitors to the steel sheet. This final annealing is usually performed by box annealing.
It is carried out by raising the temperature to a high temperature of 000℃ or higher, but according to the method of Japanese Patent Publication No. 13469/1983 proposed by the present applicant, it is heated for about 101I in the temperature range of 820 to 920℃ where secondary recrystallization occurs. After the secondary recrystallized grains are sufficiently grown by maintaining the above conditions, it is desirable to adopt a method of subsequently performing purification annealing for the purpose of removing impurities at a high temperature of 1000° C. or higher.

以上のような諸工程を経ることによって最終的にこの発
明の目的とする磁気特性の優れた一方向性珪素鋼板の製
品を安定して得ることができる。
By going through the above-mentioned steps, it is finally possible to stably obtain a unidirectional silicon steel sheet product with excellent magnetic properties, which is the object of the present invention.

以下この発明の実施例を記す。Examples of this invention will be described below.

実施例1 9i 3.05%に対してCO,043%;およびSi
 3.25%、に対してCO,045%;および9i 
3.45%に対してCO,048%の3水準の組成より
なり、いずれもインヒビターとして!、ln O,07
%、3 e O,025%、S b O,028%を含
む20011111厚の連鋳スラブを各2水溶製し、い
ずれも1380℃に1時間加熱後2.511IIl厚に
熱延し、コイルに巻きとった。次いでこれらの熱延コイ
ルを980℃に30秒保持後、第1回冷間圧延により0
.75rm厚とし、引続き950℃×2分間の中間焼鈍
時に際して、その昇温途中の再結晶初期500〜7oo
℃の湿度範囲で交流磁場を01500oeの2水準に調
整して処理し、その後さらに0.30mm厚に最終冷間
圧延して最終冷延圧下率を60%とした。次いで80C
1の湿水素中で脱炭焼鈍を施した後、)J!] 0を主
体とする焼鈍分離剤を塗イ1した後、最終焼鈍として、
4温過程の860℃で30時間保定する処理と、引続き
1200℃X′10時間の処理とを施し、その後絶縁コ
ーティングを塗布して一方向性珪素鋼板の製品とした。
Example 1 CO,043% for 9i 3.05%; and Si
3.25%, against CO,045%; and 9i
It consists of three levels of composition: 3.45% and CO, 048%, all of which act as inhibitors! ,ln O,07
%, 3 e O, 025%, and S b O, 028%, two continuous cast slabs each with a thickness of 20011111 were produced by water melting, heated to 1380°C for 1 hour, hot rolled to a thickness of 2.511 II, and formed into coils. I rolled it up. Next, these hot-rolled coils were held at 980°C for 30 seconds, and then cold-rolled for the first time to 0.
.. 75rm thickness, and then during intermediate annealing at 950°C for 2 minutes, the initial recrystallization temperature during the temperature rise was 500~7oo.
It was processed in a humidity range of 0.015°C with an alternating current magnetic field adjusted to two levels of 0.01500 oe, and then further cold rolled to a final thickness of 0.30 mm with a final cold rolling reduction of 60%. Then 80C
After decarburization annealing in wet hydrogen of 1) J! ] After applying an annealing separator mainly composed of 0, as final annealing,
A 4-temperature process of holding at 860° C. for 30 hours, followed by a 10-hour treatment at 1200° C., was carried out, and then an insulating coating was applied to produce a unidirectional silicon steel sheet product.

得られた各製品の磁気特性を測定した結果を第1表に示
す。
Table 1 shows the results of measuring the magnetic properties of each product obtained.

第1表から明らかなように、この発明の方法によりj8
られた製品は、比較例の製品ど比較して磁気特性が優れ
ていることが明らかである。
As is clear from Table 1, j8
It is clear that the obtained products have superior magnetic properties compared to the products of comparative examples.

実施例2 Si 3.096に:対し T G O,040%; 
オヨ’CFSi 3.20%に対しG O,043%;
おヨU Si 3.4096 ニ対シcO−047%の
3水準の組成よりなり、いずれもインヒビターとしてu
n O,068%およびS O,023%を含む200
1III11厚の連鋳スラブを各2水溶製し、いずれも
1360℃に1時間加熱後−2,5IIIIl厚に熱延
し、コイルに巻取った。次いでこれらの熱延コイルを酸
洗後第1回冷間圧延により0.75mm厚とし、引き続
き900℃×5分間の中間焼鈍に際して、その昇温途中
の再結晶初期500〜7oo℃の温度範囲での交流磁場
を0および500oeの2水準に調整し、その後さらに
0.30n+a+厚に最終冷延して最終冷延圧下率を6
0%とした。次いで8oo℃の湿水素中で脱炭焼鈍を施
した後、MQ Oを主体とする焼鈍分離剤を塗布し、箱
焼鈍にて直ちに1170℃に昇温しで15時間保定する
最終焼鈍を施して一方向性珪素鋼板の製品を得た。これ
らの製品について磁気特性を調べた結果を第2表に示す
Example 2 Si 3.096: versus T GO, 040%;
Oyo' CFSi 3.20% vs. GO, 043%;
It consists of three levels of composition: Oyo U Si 3.4096 2 and Si cO-047%, all of which have U as an inhibitor.
200 containing n O,068% and S O,023%
Two continuous cast slabs each having a thickness of 1III and 11 were produced by aqueous melting, heated to 1360°C for 1 hour, hot rolled to a thickness of -2.5III and wound into a coil. These hot-rolled coils were then pickled and cold-rolled to a thickness of 0.75 mm, followed by intermediate annealing at 900°C for 5 minutes at a temperature range of 500 to 70°C at the initial stage of recrystallization during heating. The alternating current magnetic field was adjusted to two levels, 0 and 500 oe, and then the final cold rolling was further performed to a thickness of 0.30n+a+, and the final cold rolling reduction was 6.
It was set to 0%. Next, after decarburizing annealing in wet hydrogen at 80°C, an annealing separator mainly composed of MQO was applied, and a final annealing was performed in which the temperature was immediately raised to 1170°C in a box annealing and held for 15 hours. A product of unidirectional silicon steel plate was obtained. Table 2 shows the results of examining the magnetic properties of these products.

第2表に示すように、実施例2の場合もこの発明の方法
によって得られた製品は、比較例の製品と比較して磁気
特性が優れていることが明らかである。
As shown in Table 2, it is clear that the product obtained by the method of the present invention in Example 2 also has superior magnetic properties compared to the product of the comparative example.

以上のようにこの発明の方法によれば、最終冷延前の中
間焼鈍に際してその再結晶初期段階で1QQoe以上の
交流磁場を付与することにより、従来よりも優れた磁気
特性を有する一方向11珪素相板を確実かつ安定して得
ることができ、またその工程としても交流@舅の付与の
ほかは従来と同様であるためニスト上昇が小さく、紅済
的かつ能率的に優れた一方向性珪素飼板を′1りること
ができる。
As described above, according to the method of the present invention, by applying an alternating current magnetic field of 1QQoe or more in the initial stage of recrystallization during intermediate annealing before final cold rolling, unidirectional 11 silicon having superior magnetic properties than conventional ones can be produced. The phase plate can be obtained reliably and stably, and the process is the same as the conventional one except for the addition of AC @, so the rise in the concentration is small, and it is a unidirectional silicon that is efficient and efficient. The feed board can be lifted by 1'.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は最終冷延前の中間焼鈍における昇温過程での再
結晶率、および(110)面と(222)面のX線(う
密度を、従来法と本発明法とで比較して示す図、第2図
は中間焼鈍工程の昇温過程の再結晶初期段階で交流磁場
を付与し1゛二場においてその磁場の強さが製品の磁束
玉石810埴および鉄損〜へ’ 17 / 50に及ぼ
す影響を示す(0関図である。
Figure 1 shows a comparison of the recrystallization rate during the heating process during intermediate annealing before the final cold rolling and the X-ray density of the (110) and (222) planes between the conventional method and the method of the present invention. Figure 2 shows that an alternating current magnetic field is applied at the initial stage of recrystallization in the temperature raising process of the intermediate annealing process, and the strength of the magnetic field in the 1 and 2 fields increases the magnetic flux of the product and the iron loss. 50 (this is a 0 relationship diagram).

Claims (1)

【特許請求の範囲】 G O,025〜0.10 % (重196、Q 下向
L; ) 、Si2.5〜4.0%、Mn O,02〜
0.15%を含有しかつs、seのいずれか1種または
2種を合計聞で0.008〜o、oao%含有す−る珪
素鋼スラブを熱間圧延する工程と、その熱延板に対して
750〜1100℃の温度範囲内での中間焼鈍を挾む2
回の冷間圧延を施し、かつその2回の冷間圧延のうち最
終冷間圧延における圧下率を40〜80%として所定の
板厚に仕上げる工程と、その冷延板に脱炭焼鈍および最
終焼鈍を施す工程とを有してなる一方向性珪素鋼板の製
造方法において、 前記最終冷間圧延前の中間焼鈍工程における鋼板の再結
晶初期段階の500℃以上、磁気変態点以下の温度範囲
内において100エルステッド以上の交流磁場を鋼板の
圧延方向に平行に付与することを特徴とする一方向性珪
素鋼板の製造方法。
[Claims] GO, 025~0.10% (weight 196, Q downward L; ), Si2.5~4.0%, MnO, 02~
A step of hot rolling a silicon steel slab containing 0.15% and one or both of s and se in a total content of 0.008 to o, oao%, and a hot rolled sheet thereof. Intermediate annealing within the temperature range of 750-1100℃ for 2
The cold rolled sheet is then subjected to decarburization annealing and a final process. A method for producing a unidirectional silicon steel sheet comprising the step of annealing, the temperature being within a temperature range of 500° C. or higher and below the magnetic transformation point at the initial stage of recrystallization of the steel sheet in the intermediate annealing step before the final cold rolling. A method for producing a unidirectional silicon steel sheet, characterized in that an alternating current magnetic field of 100 Oe or more is applied parallel to the rolling direction of the steel sheet.
JP58152667A 1983-08-22 1983-08-22 Preparation of one directional silicon steel plate Pending JPS6046319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58152667A JPS6046319A (en) 1983-08-22 1983-08-22 Preparation of one directional silicon steel plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58152667A JPS6046319A (en) 1983-08-22 1983-08-22 Preparation of one directional silicon steel plate

Publications (1)

Publication Number Publication Date
JPS6046319A true JPS6046319A (en) 1985-03-13

Family

ID=15545458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58152667A Pending JPS6046319A (en) 1983-08-22 1983-08-22 Preparation of one directional silicon steel plate

Country Status (1)

Country Link
JP (1) JPS6046319A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616514U (en) * 1992-06-11 1994-03-04 象印マホービン株式会社 Vacuum insulation panel
US6217672B1 (en) * 1997-09-24 2001-04-17 Yide Zhang Magnetic annealing of magnetic alloys in a dynamic magnetic field

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616514U (en) * 1992-06-11 1994-03-04 象印マホービン株式会社 Vacuum insulation panel
US6217672B1 (en) * 1997-09-24 2001-04-17 Yide Zhang Magnetic annealing of magnetic alloys in a dynamic magnetic field

Similar Documents

Publication Publication Date Title
SK283772B6 (en) Process for the production of grain oriented electrical steel strip starting from thin slabs
JPS6250529B2 (en)
JPH02274815A (en) Production of grain-oriented silicon steel sheet excellent in magnetic property
JPH0241565B2 (en)
JP4268042B2 (en) Method for producing (110) [001] grain-oriented electrical steel using strip casting
JP3392664B2 (en) Manufacturing method of grain-oriented electrical steel sheet with extremely low iron loss
JPS5855530A (en) Preparation of unidirectional silicon steel sheet excellent in magnetic property
JPS6046319A (en) Preparation of one directional silicon steel plate
JP4258149B2 (en) Method for producing grain-oriented electrical steel sheet
KR950002895B1 (en) Ultra-high silicon oriented electrical steel sheet and manufacturing method
KR950008692B1 (en) Process for production of oriented electrical steel sheet having excellent magnetic properties
JPS6253572B2 (en)
JP3169427B2 (en) Method for producing bidirectional silicon steel sheet with excellent magnetic properties
JPS6059044A (en) Grain-oriented silicon steel sheet having low iron loss value and its production
JPS6089521A (en) Production of grain oriented silicon steel sheet having excellent magnetic characteristic
JPS6152318A (en) Manufacture of grain-oriented silicon steel sheet
KR970007162B1 (en) Method for manufacturing oriented electrical steel sheet of low temperature slab heating method with excellent iron loss characteristics
JPH05271774A (en) Manufacture of dual oriented silicon steel sheet excellent in magnetic property
JPH046221A (en) Production of double oriented silicon steel sheet
JPH0222422A (en) Production of unidirectional type silicon steel sheet excellent in magnetic property
JPH02141531A (en) Production of dual oriented electrical steel sheet having high magnetic flux density
JPH1161358A5 (en)
JPH0617512B2 (en) Method for producing unidirectional electrical steel sheet with extremely high magnetic flux density
JPS60135523A (en) Production of grain-oriented silicon steel sheet
JPS62140401A (en) Manufacture of uni-directional silicon steel plate