JPS6047520A - Electronic tuner - Google Patents
Electronic tunerInfo
- Publication number
- JPS6047520A JPS6047520A JP58156593A JP15659383A JPS6047520A JP S6047520 A JPS6047520 A JP S6047520A JP 58156593 A JP58156593 A JP 58156593A JP 15659383 A JP15659383 A JP 15659383A JP S6047520 A JPS6047520 A JP S6047520A
- Authority
- JP
- Japan
- Prior art keywords
- reactance element
- tuning
- diode
- band
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
- H03J5/24—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
- H03J5/242—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection
- H03J5/244—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection using electronic means
Landscapes
- Channel Selection Circuits, Automatic Tuning Circuits (AREA)
- Noise Elimination (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は不要信号による妨害排除能力を向」二さ２ベー
ン゛
せた電子同調チー−すに関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a two-vane electronic tuning team with improved ability to eliminate interference caused by unwanted signals.
従来例の構成とその問題点
アメリカを中心とするケーブルテレビの普及増Ｋ 伴す
い、テレビジョン受像機またはビデオテープレコーダ用
電子同調チー−すにおいても、ケーブルテレビ受信可能
な電子同調チー−すが増加してきている。Conventional configurations and their problems With the increasing popularity of cable television, especially in the United States, electronic tuning chips for television receivers or video tape recorders that can receive cable television are becoming increasingly popular. It is increasing.
しかしながら、ケーブルテレビ受信チャンネル数の増加
に伴ない、テレビチー−すで発生する非直線歪みによる
混変調、ビート妨害が従来以上に増加することになる。However, as the number of cable television reception channels increases, cross-modulation and beat interference due to non-linear distortion occurring in television channels will increase more than ever.
第１図は、従来からの電子同調チー−すの入力回路構成
を示すものである。第１図においてＨＰＦは電子同調チ
ー−すの中間周波数減衰用の低域遮断フィルタであυ、
ＩＦ妨妨害対策用フィルタである。Ｌ １．１１２は同
調用インダクタンス、”＋”ｔｒｉ入力整合用インダク
タンス、Ｃ３，Ｃ５，Ｃ７，Ｃ８，Ｃ９゜Ｃ１［１は高
周波接地用コンデンサ、０＋ 、０２ 、Ｃ４、Ｃ６は
直流阻止用コンデンサ、Ｑｌは高周波増幅用素子、ＤＴ
は同調用可変容量ダイオード、Ｄｓ＋は高３ページ゛
バンド及ヒ低バンド切換用スイッチングダイオードであ
る。Ｂ＋ 、Ｒ２、Ｒ３、Ｒ４、Ｒｓ 、Ｒ６はダイオ
ード及び高周波増幅素子への直流バイアス用抵抗、ＡＣ
，Ｃは高周波増幅用素子Ｑ１への利得制御電圧供給端子
、ＢＳは低バンド、高バンド切換用のバンドスイッチ端
子、ＢＴは同調用可変容量ダイオードへの電圧供給端子
、Ｂ＋は高周波増幅用素子Ｑ１ の駆動用電源端子であ
る。FIG. 1 shows the input circuit configuration of a conventional electronic tuning cheese. In Fig. 1, HPF is a low-frequency cutoff filter for attenuating the intermediate frequency of electronic tuning wheels.
This is an IF jamming countermeasure filter. L 1.112 is the tuning inductance, "+" tri input matching inductance, C3, C5, C7, C8, C9 ° C1 [1 is the high frequency grounding capacitor, 0+, 02, C4, C6 are the DC blocking capacitors, Ql is a high frequency amplification element, DT
is a tuning variable capacitance diode, and Ds+ is a switching diode for switching between the high 3-page band and the low band. B+, R2, R3, R4, Rs, R6 are resistors for DC bias to the diode and high frequency amplification element, AC
, C is a gain control voltage supply terminal to the high frequency amplification element Q1, BS is a band switch terminal for switching between low band and high band, BT is a voltage supply terminal to the tuning variable capacitance diode, and B+ is a terminal for supplying voltage to the high frequency amplification element Q1. This is the power supply terminal for driving.
以上のような回路構成においては、例えばＧＡＴＶのよ
うな受信チャンネルの多いチャンネルかつ受信周波数レ
ンジの広いチャンネルを同調しようとすると、同調回路
の負荷Ｑは従来のチー−すより更に低くおさえられる。In the circuit configuration as described above, when attempting to tune a channel such as GATV, which has many reception channels and a wide reception frequency range, the load Q of the tuning circuit can be kept lower than that of conventional channels.
この場合、同調回路のＱが低くなるため、帯域外選択度
特性の悪化をまねく。これは、入力同調回路のみならず
、高周波増幅用素子Ｑ１の出力側に接続される同調回路
についても同様であシ、チー−す総合での帯域外選択度
特性としても充分とはいえない。ＣＡＴＶ受信の場合、
受信チャンネルの増加に伴ない、増幅用素子及び混合用
素子で発生する非直線歪みによる混変調、ビート妨害が
無視できなく、帯域外選択度の悪化は、更にこの不要信
号に７１する妨害を増加することになる。特にＣＡＴＶ
受信の場合は、低バンド受信の場合の受信チャンネルよ
り」二の周波数による妨害を、特に考慮する必要がある
。In this case, the Q of the tuning circuit becomes low, leading to deterioration of out-of-band selectivity characteristics. This applies not only to the input tuning circuit but also to the tuning circuit connected to the output side of the high-frequency amplification element Q1, and the overall out-of-band selectivity characteristic of the chips cannot be said to be sufficient. For CATV reception,
As the number of receiving channels increases, cross-modulation and beat interference due to non-linear distortion generated in amplification elements and mixing elements cannot be ignored, and deterioration of out-of-band selectivity further increases interference to unnecessary signals. I will do it. Especially CATV
In the case of reception, it is necessary to particularly take into account interference from frequencies two times higher than the reception channel in the case of low-band reception.
発明の目的
本発明はこのような従来の欠点を解決するもので、帯域
外選択度特性を改暦することにより、不要信号に対する
妨害を低減させることを目的とするものである。OBJECTS OF THE INVENTION The present invention solves these conventional drawbacks, and aims to reduce interference with unnecessary signals by revising the out-of-band selectivity characteristics.
発明の構成
この目的を達成するために本発明は、入力端子と入力同
調回路の間に直列に誘導性リアクタンス素子を挿入接続
し、その誘導性リアククンス素子の一方または両方の端
子に容昂゛性リアクタンス素子と高周波スイッチング用
ダイオードの直列回路の一端を接続するとともに、他端
を接地し、かつ容量性リアクタンス素子と高周波スイッ
チング用ダイオードの中点を直流電圧駆動用バイアス抵
抗素子を介してバンドスイッチ端子に接続したもの５ベ
ーン
である。Structure of the Invention In order to achieve this object, the present invention connects an inductive reactance element in series between an input terminal and an input tuning circuit, and connects one or both of the terminals of the inductive reactance element with elasticity. One end of the series circuit of the reactance element and the high-frequency switching diode is connected, the other end is grounded, and the midpoint between the capacitive reactance element and the high-frequency switching diode is connected to the band switch terminal via the DC voltage drive bias resistance element. There are 5 vanes connected to the .
実施例の説明
第２図に本発明の一実施例による電子同調チ一ナの回路
構成を示す。アンテナ入力端子または低域遮断フィルタ
ＨＰＦと入力同調回路の間に、直列にインダクタンスＬ
５を挿入接続し、入力同調回路とインダクタンスＬ５の
接続点からコンデンサＣ＋＋ と高周波スイッチング用
ダイオードＤ１１２を直列接続し、ダイオードＤＳ２の
他端を接地し、コンデンサＣ＋＋とダイオードＤｓ２の
中点より抵抗Ｒ７を介して、バンドスイッチ端子Ｂｓに
接続されている。ダイオードＤＳ２は、低バンド受信に
おいて、バンドスイッチ端子Ｂｓからの直流電源によυ
オン状態となり、高バンドにおいては、オフ状態になる
ようバンドスイッチ端子ＢＣと常に連動されるよう配慮
されている。低バンド受信時は、ダイオードＤ１２はオ
ンとなり、入力回路は、インダクタンスＬ５とコンデン
サＣ１１よりなる低域Ｆ波フィルターを構成し、高域周
波数領域の減衰特性を改善することに寄与する。なお、
この場合の６ ・−フ
インダクタンスＬ５とコンデンサＣ１１の定数は、低バ
ンド受信チャンネルより、やや高い周波数にカットオフ
周波数を決めるよう決定される。寸だ、高バンド受信時
は、ダイオードＤＳ２はオフとなり、入力同調回路は、
インダクタンスＬ５のみが直列に入シ、インダクタンス
Ｌ５は整合用コイルの一部として動作し、かつ誘導性リ
アククンス素子の直列接続により、受信周波数より高い
周波数領域でのインピーダンス増加に伴ない、高域減衰
特性を改善することができる。DESCRIPTION OF THE EMBODIMENTS FIG. 2 shows a circuit configuration of an electronic tuning tuner according to an embodiment of the present invention. Inductance L is connected in series between the antenna input terminal or low-frequency cutoff filter HPF and the input tuning circuit.
5 is inserted and connected, a capacitor C++ and a high frequency switching diode D112 are connected in series from the connection point between the input tuning circuit and the inductance L5, the other end of the diode DS2 is grounded, and a resistor R7 is connected from the midpoint between the capacitor C++ and the diode Ds2. It is connected to the band switch terminal Bs via the band switch terminal Bs. In low band reception, diode DS2 receives υ from the DC power supply from band switch terminal Bs.
It is designed to be always linked to the band switch terminal BC so that it is in the on state and in the high band, it is in the off state. During low band reception, the diode D12 is turned on, and the input circuit forms a low-pass F-wave filter consisting of the inductance L5 and the capacitor C11, contributing to improving the attenuation characteristics in the high frequency region. In addition,
In this case, the constants of the 6.-inductance L5 and the capacitor C11 are determined so as to set the cutoff frequency at a slightly higher frequency than the low band reception channel. When receiving a high band, diode DS2 is turned off and the input tuning circuit is turned off.
Only the inductance L5 is connected in series, and the inductance L5 operates as a part of the matching coil, and due to the series connection of the inductive reactance element, the high-frequency attenuation characteristic increases as the impedance increases in the frequency region higher than the reception frequency. can be improved.
以上のように比較的筒中な回路構成により、高域選択度
特性を改善することができる。With the relatively compact circuit configuration as described above, the high frequency selectivity characteristics can be improved.
また、第３図のようにインダクタンスＬ５の両方の端子
にコンデンサ０１１，０１２の一端をそれぞれ接続し、
他端を共通接続してダイオードＤｓ２のカソードに接続
することにより、更に高域選択度特性を改善することが
できる。Also, as shown in Figure 3, one end of capacitors 011 and 012 are connected to both terminals of inductance L5, respectively.
By connecting the other ends in common to the cathode of the diode Ds2, the high frequency selectivity characteristics can be further improved.
また、コンデンサＣ１１，Ｃ１２の代りに、可変容量ダ
イオードを用いてもよい。Further, variable capacitance diodes may be used instead of the capacitors C11 and C12.
発明の効果
７ベーーシ゛
以上のように本発明の電子同調チ・−すによれば、高域
減衰特性を改善することができ、これにより不要信号に
対する妨害を低減させることができるという効果が得ら
れる。Effects of the Invention As described above, according to the electronic tuning cheese of the present invention, it is possible to improve the high-frequency attenuation characteristics, thereby achieving the effect that interference with unnecessary signals can be reduced. .
第１図は従来の電子同調チー−すの入力回路を示す回路
図、第２図は本発明の一実施例による電子同調チ・−す
の入力回路を示す回路図、第３図は本発明の他の実施例
による電子同調チー−すの入力回路の要部の回路図であ
る。
Ｌ５・・・・・・インダクタンス、Ｃ１１，Ｃ１２・川
・・コンデンサ、ＤＳ２・・・・・・ダイオード、Ｒ７
・・・・・・抵抗、Ｂｓ・・・・・・バンドスイッチ端
子。
代理人の氏名弁理士 中 尾 敏 男 ほか１名第１図
ｆ３Ｓ Ｂｒ Ｂ中
球
−９！FIG. 1 is a circuit diagram showing an input circuit of a conventional electronic tuning cheese, FIG. 2 is a circuit diagram showing an input circuit of an electronic tuning cheese according to an embodiment of the present invention, and FIG. 3 is a circuit diagram showing an input circuit of an electronic tuning cheese according to an embodiment of the present invention. FIG. 2 is a circuit diagram of a main part of an input circuit of an electronic tuning cheese according to another embodiment of the present invention. L5... Inductance, C11, C12... Capacitor, DS2... Diode, R7
...Resistor, Bs...Band switch terminal. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 f3S Br B medium ball-9!
Claims (2)
クタンス素子を挿入接続し、その誘導性リアクタンス素
子の一方または両方の端子に容量性リアクタンス素子と
高周波スイッチング用ダイオードの直列回路の一端を接
続するとともに、他端を接地し、かつ容量性リアククン
ス素子と高周波スイッチング用ダイオードの中点を直流
電圧駆動用バイアス抵抗素子を介してノくンＩＪスイッ
チ端子に接続したことを特徴とする電子同調チー−す。(1) Insert and connect an inductive reactance element in series between the input terminal and the input tuning circuit, and connect one end of the series circuit of the capacitive reactance element and the high-frequency switching diode to one or both terminals of the inductive reactance element. and the other end is grounded, and the midpoint between the capacitive reactance element and the high-frequency switching diode is connected to the Nokun IJ switch terminal via a DC voltage drive bias resistance element. Chees.
ードを使用したことを特徴とする特許請求の範囲第１項
に記載の電子同調チー−す。(2) The electronic tuning team according to claim 1, wherein a variable capacitance diode is used as the capacitive reactance element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58156593A JPS6047520A (en) | 1983-08-26 | 1983-08-26 | Electronic tuner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58156593A JPS6047520A (en) | 1983-08-26 | 1983-08-26 | Electronic tuner |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6047520A true JPS6047520A (en) | 1985-03-14 |
| JPS6326568B2 JPS6326568B2 (en) | 1988-05-30 |
Family
ID=15631148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58156593A Granted JPS6047520A (en) | 1983-08-26 | 1983-08-26 | Electronic tuner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6047520A (en) |
-
1983
- 1983-08-26 JP JP58156593A patent/JPS6047520A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6326568B2 (en) | 1988-05-30 |
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