JPS6050936A - Method of evaluating composition distribution of compound semiconductor crystal - Google Patents
Method of evaluating composition distribution of compound semiconductor crystalInfo
- Publication number
- JPS6050936A JPS6050936A JP58159867A JP15986783A JPS6050936A JP S6050936 A JPS6050936 A JP S6050936A JP 58159867 A JP58159867 A JP 58159867A JP 15986783 A JP15986783 A JP 15986783A JP S6050936 A JPS6050936 A JP S6050936A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- wavelength
- substrate
- distribution
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は化合物半導体結晶の組成分布評価法に係り、特
に化合物半導体結晶からなる基板全面の組成分布状態を
、赤外線の透過波長によって正確、かつ短時間に評価し
得る方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for evaluating the composition distribution of a compound semiconductor crystal, and in particular, a method for accurately and accurately evaluating the composition distribution state of the entire surface of a substrate made of a compound semiconductor crystal using the transmission wavelength of infrared rays. It relates to a method that can be evaluated in a short time.
（ｂｌ 技術の背景
化合物半導体結晶、特に赤外線検知素子の製造に用いら
れる例えば水銀−カドミウムーテルル（１１ｇ１−ウＣ
ｄｘＴｅ）からなる結晶基板としては、Ｘ値を変化させ
ることにより任意の最大応答波長特性を有する赤外線検
知素子を製作することができる。(bl Technology Background Compound semiconductor crystals, such as mercury-cadmium telluride (11g1-UC
By changing the X value, an infrared sensing element having arbitrary maximum response wavelength characteristics can be manufactured using a crystal substrate made of (dxTe).
しかしこの場合、問題になるのは前記結晶基板内での各
組成の均−性及び不純物分布の均一性などである。従っ
てこれらの問題は結晶成長技術の改善等によって解消を
図っているが、このようなことに関連して前記結晶基板
の結晶組成分布を正確に観測評価することが重要となる
。However, in this case, problems include the uniformity of each composition and the uniformity of impurity distribution within the crystal substrate. Therefore, attempts are being made to solve these problems by improving crystal growth techniques, but in connection with this, it is important to accurately observe and evaluate the crystal composition distribution of the crystal substrate.
（ｃ＋ 従来技術と問題点
従来、赤外線検知素子の製造に用いられる例えば水銀−
カドミウム−テルル（Ｈｇｌ−ｘＣｄｘＴｅ）からなる
結晶基板等の組成分布評価法としては、第１図に示すよ
うに、結晶の組成分布状態を評価すべきＩＩｇ＋−ｘＣ
ｄｘＴｅからなる結晶基板１の前面に、スリ７ト３が穿
設され、かつ基板前面に沿ってＸ、 Ｙ方向に移動可能
なスリット板２を配置し、所定波長範囲の赤外光を赤外
用分光器４より前記スリット３を通して、結晶基板ｌ上
にスポット状にその波長を順次変化させそ照射する。そ
して該結晶基板１を透過した波長の赤外光は、ホトカプ
ラ等からなる赤外線検出器５にて受光され、かつ光電変
換され、その電気信号は例えば測定記録装置６に送られ
て第２図に示すように記録される。この第２図に示す記
録曲線Ａより前記結晶基板１を透過し始めた波長、即ち
その波長のピークを過ぎて、該ピークでの感度が半分と
なる感度のカットオフ波長Ｂを測定する。しかる後、各
カットオフ波長と結晶組成との関係表により前記カット
オフ波長Ｂと対応する結晶組成を前記結晶基板ｌの赤外
光透過部分の結晶組成とする。以下前記結晶基板１の全
面にスリ７）板２のスリット３を所定間隔をもって移動
操作して上記と同様のプロセスによって各部分の結晶組
成を検出し、該結晶基板１全面の結晶組成分布図を作成
してその評価を行う方法がとられている。(c+ Prior art and problems Conventionally, for example, mercury-
As shown in Figure 1, as a method for evaluating the composition distribution of a crystal substrate made of cadmium-tellurium (Hgl-xCdxTe), IIg+-xC
A slit 7 is bored in the front surface of a crystal substrate 1 made of dxTe, and a slit plate 2 movable in the X and Y directions is arranged along the front surface of the substrate to emit infrared light in a predetermined wavelength range. A spectroscope 4 passes through the slit 3 and irradiates the crystal substrate 1 with a spot-shaped beam of varying wavelength. The infrared light having the wavelength transmitted through the crystal substrate 1 is received by an infrared detector 5 made of a photocoupler, etc., and photoelectrically converted, and the electrical signal is sent to, for example, a measuring and recording device 6, as shown in FIG. Recorded as shown. From the recording curve A shown in FIG. 2, the wavelength that begins to transmit through the crystal substrate 1, that is, the cutoff wavelength B at which the sensitivity at the peak becomes half is measured after passing the peak of that wavelength. Thereafter, based on the relationship table between each cutoff wavelength and crystal composition, the crystal composition corresponding to the cutoff wavelength B is determined as the crystal composition of the infrared light transmitting portion of the crystal substrate I. Thereafter, the entire surface of the crystal substrate 1 is slit 7) The slits 3 of the plate 2 are moved at predetermined intervals to detect the crystal composition of each part by the same process as above, and the crystal composition distribution map of the entire surface of the crystal substrate 1 is obtained. The method used is to create and evaluate the results.
しかしこの方法においては、所定波長範囲の赤外ビーム
・スポットを照射操作し、その時の透過波長によって結
晶基板１全面の結晶組成分布状態図を作成し、評価して
いるため、その評価過程に長時間が費やされると共に、
前記組成分布状態図が大まかになり、結晶基板１全面の
結晶組成分布の評価に正確性が欠ける欠点があった。However, in this method, an infrared beam spot in a predetermined wavelength range is irradiated, and a crystal composition distribution phase diagram of the entire surface of the crystal substrate 1 is created and evaluated based on the transmitted wavelength at that time, so the evaluation process takes a long time. As time is spent,
There was a drawback that the composition distribution state diagram became rough, and the evaluation of the crystal composition distribution over the entire surface of the crystal substrate 1 lacked accuracy.
（ｄｌ 発明の目的
本発明は上記従来の実情に鑑み、評価すべき化合物半導
体結晶基板の全面に、所定波長範囲の赤外ビームを、そ
の波長を順次変化させて照射し、透過した波長の赤外光
を赤外線画像装置によ７て二次元的にサーモグラフィ・
ンク化して前記結晶基板全面の結晶組成分布を短時間で
、かつ正確に評価し得る新規な化合物半導体結晶の組成
分布評価法を提供することを目的とするものである。(dl Purpose of the Invention In view of the above-mentioned conventional situation, the present invention aims to irradiate the entire surface of a compound semiconductor crystal substrate to be evaluated with an infrared beam in a predetermined wavelength range while sequentially changing the wavelength, and Two-dimensional thermography of external light using an infrared imager
An object of the present invention is to provide a novel method for evaluating the composition distribution of a compound semiconductor crystal, which can quickly and accurately evaluate the crystal composition distribution over the entire surface of the crystal substrate.
ｔｅ） 発明の構成
そしてこの目的は本発明によれば、所定波長範囲の赤外
線を化合物半導体結晶基板に可変照射して、該結晶基板
を透過する赤外線の波長によってその結晶組成分布を評
価する方法において、上記結晶基板を透過した波長の赤
外線を赤外ＩＩ画像手段によりパターン表示し、該赤外
線波長パターンにより該結晶基板の組成分布を評価する
ようにしたことを特徴とする化合物半導体結晶の組成分
布評価法を提供することによって達成される。te) Structure and object of the invention According to the present invention, a method is provided in which a compound semiconductor crystal substrate is variably irradiated with infrared rays in a predetermined wavelength range and the crystal composition distribution of the compound semiconductor crystal substrate is evaluated based on the wavelength of the infrared rays transmitted through the crystal substrate. , a composition distribution evaluation of a compound semiconductor crystal characterized in that infrared rays having wavelengths transmitted through the crystal substrate are displayed in a pattern by an infrared II imaging means, and the composition distribution of the crystal substrate is evaluated based on the infrared wavelength pattern. This is achieved by providing law.
（ｆｌ 発明の実施例
以下図面を用いて本発明の実施例について詳細に説明す
る。(fl Embodiments of the Invention Below, embodiments of the present invention will be described in detail with reference to the drawings.
第３図は本発明に係る化合物半導体結晶の組成分布評価
法に通用する装置構成の一実施例を概念的に示す説明図
である。FIG. 3 is an explanatory diagram conceptually showing an example of an apparatus configuration applicable to the composition distribution evaluation method of a compound semiconductor crystal according to the present invention.
本発明においては、図示のようにまず所定波長範囲の赤
外光を赤外用分光器３２より結晶組成分布３を評価すべ
きＨｆｈ−８ＣｄｘＴｅからなる化合物半導体結晶基板
３１上の全面に、光波長切換制御装置３３によって光波
長を順次変化させて照射する。そして該結晶基板３１を
透過した各波長の赤外光は集光レンズ３４によって集束
され、更に赤外線画像装置３５において透過波長別に色
透過パターン化処理を行う。そしてこれら各透過波長別
の色透過）くターンを、例えばモニターＴＶ３６の画面
に重ねて図示のように表示することにより、前記結晶基
板３１全面に対する各透過波長分布が明確となり、此の
表示ノマクーン３７を結晶組成分布に画像処理すれば、
前記結晶基板３１全面の結晶組成分布を短時間に、し力
・も正確に得ることが可能となる。その結果二次元的に
上記結晶組成分布状態を正確、且つ容易に評価すること
が可能となる。In the present invention, as shown in the figure, first, infrared light in a predetermined wavelength range is applied to the entire surface of a compound semiconductor crystal substrate 31 made of Hfh-8CdxTe whose crystal composition distribution 3 is to be evaluated using an infrared spectrometer 32, and the optical wavelength is switched. The control device 33 sequentially changes the wavelength of light and irradiates the light. The infrared light of each wavelength transmitted through the crystal substrate 31 is focused by a condenser lens 34, and further subjected to color transmission patterning processing for each transmitted wavelength in an infrared imaging device 35. By displaying these color transmission patterns for each transmission wavelength, for example, on the screen of the monitor TV 36 as shown in the figure, the distribution of each transmission wavelength over the entire surface of the crystal substrate 31 becomes clear, and this display nomacoon 37 If image processing is performed on the crystal composition distribution,
It becomes possible to accurately obtain the crystal composition distribution over the entire surface of the crystal substrate 31 in a short time. As a result, it becomes possible to accurately and easily evaluate the crystal composition distribution state in a two-dimensional manner.
尚、以上の実施例では、水銀−カドミウム−テルル（Ｈ
ｇ＋−ｘＣｄｘ Ｔｅ）からなる化合物半導体結晶基板
を用いた場合の例について説明したが、本発明はこの例
に限定されるものではなく、例えば鉛−錫−テルル（ｐ
ｂ、−ｘｓｅｘＴｅ） ｌ鉛−硫黄−セレン（Ｐｂ Ｓ
、ｘＳｅｘ）等からなる化合物半導体結晶基板の結晶組
成分布状態の評価にも適用可能なこと番よ言うまでもな
い。In the above examples, mercury-cadmium-tellurium (H
Although an example has been described in which a compound semiconductor crystal substrate made of lead-tin-tellurium (p
b, -xsexTe) l Lead-sulfur-selenium (PbS
Needless to say, this method can also be applied to the evaluation of the crystal composition distribution state of a compound semiconductor crystal substrate made of semiconductors such as , xSex), etc.
（ｇｌ 発明の効果
以上の説明から明らかなように、本発明に係る化合物半
導体結晶全体の組成分布評価法Ｇこよれｂｉ、各種化合
物半導体結晶の組成分布状態を短時間で、かつ正確に評
価することが可能となる優れた第１１点を有し、各種化
合物半導体結晶の成長工程へ、形成された各種化合物半
導体結晶の組成分布状態を短時間にフィードバンクする
ことができる。又所望とする最大応答波長特性を有する
化合物半導体結晶基板を短時間で選別し次の素子製造工
程に提供することができる等、実用上優れた効果を有す
る。(gl Effects of the Invention As is clear from the above explanation, the method for evaluating the composition distribution of the entire compound semiconductor crystal according to the present invention can quickly and accurately evaluate the composition distribution state of various compound semiconductor crystals. The composition distribution state of the various compound semiconductor crystals formed can be feedbanked in a short time to the growth process of various compound semiconductor crystals. This method has excellent practical effects, such as being able to select compound semiconductor crystal substrates having response wavelength characteristics in a short time and providing them to the next device manufacturing process.
第１図は従来の化合物半導体結晶の組成分布評価法を説
明する概念図、第２図は結晶基板を透過するカットオフ
波長を説明する図、第３図は本発明に係る化合物半導体
結晶の組成分布評価法に適用する装置構成の一実施例を
概念的に示す説明図である。Figure 1 is a conceptual diagram explaining the conventional method for evaluating composition distribution of compound semiconductor crystals, Figure 2 is a diagram explaining the cutoff wavelength transmitted through the crystal substrate, and Figure 3 is the composition of compound semiconductor crystal according to the present invention. FIG. 2 is an explanatory diagram conceptually showing an example of a device configuration applied to a distribution evaluation method.
Claims (1)
射して、該結晶基板を透過する赤外線の波長によってそ
の結晶組成分布を評価する方法において、上記結晶基板
を透過した波長の赤外線を赤外線画像手段によりパター
ン表示し、該赤外線波長パターンにより該結晶基板の組
成分布を評価するようにしたことを特徴とする化合物半
導体結晶の組成分布評価法。In a method of variably irradiating a compound semiconductor crystal substrate with infrared rays in a predetermined wavelength range and evaluating the crystal composition distribution based on the wavelength of the infrared rays transmitted through the crystal substrate, the infrared rays having the wavelength transmitted through the crystal substrate are used by an infrared imaging means. 1. A method for evaluating the composition distribution of a compound semiconductor crystal, comprising displaying a pattern and evaluating the composition distribution of the crystal substrate based on the infrared wavelength pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58159867A JPS6050936A (en) | 1983-08-30 | 1983-08-30 | Method of evaluating composition distribution of compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58159867A JPS6050936A (en) | 1983-08-30 | 1983-08-30 | Method of evaluating composition distribution of compound semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6050936A true JPS6050936A (en) | 1985-03-22 |
| JPS6337501B2 JPS6337501B2 (en) | 1988-07-26 |
Family
ID=15702944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58159867A Granted JPS6050936A (en) | 1983-08-30 | 1983-08-30 | Method of evaluating composition distribution of compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050936A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03187426A (en) * | 1989-12-15 | 1991-08-15 | Matsushita Electric Works Ltd | Closet water washing device |
| JPH03187425A (en) * | 1989-12-15 | 1991-08-15 | Matsushita Electric Works Ltd | Closet water washing device |
| WO2001020662A1 (en) * | 1999-09-10 | 2001-03-22 | Nikko Materials Co., Ltd. | Device for mapping composition ratio of specific element which compound semiconductor wafer contains |
| JP2021170005A (en) * | 2020-04-15 | 2021-10-28 | 株式会社コーセー | Crystal structure distribution evaluation method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03114701U (en) * | 1990-03-07 | 1991-11-26 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5193665A (en) * | 1975-02-14 | 1976-08-17 | ||
| JPS57206045A (en) * | 1981-06-12 | 1982-12-17 | Fujitsu Ltd | Method for checking silicon wafer |
-
1983
- 1983-08-30 JP JP58159867A patent/JPS6050936A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5193665A (en) * | 1975-02-14 | 1976-08-17 | ||
| JPS57206045A (en) * | 1981-06-12 | 1982-12-17 | Fujitsu Ltd | Method for checking silicon wafer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03187426A (en) * | 1989-12-15 | 1991-08-15 | Matsushita Electric Works Ltd | Closet water washing device |
| JPH03187425A (en) * | 1989-12-15 | 1991-08-15 | Matsushita Electric Works Ltd | Closet water washing device |
| WO2001020662A1 (en) * | 1999-09-10 | 2001-03-22 | Nikko Materials Co., Ltd. | Device for mapping composition ratio of specific element which compound semiconductor wafer contains |
| JP2021170005A (en) * | 2020-04-15 | 2021-10-28 | 株式会社コーセー | Crystal structure distribution evaluation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6337501B2 (en) | 1988-07-26 |
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