JPS6051202B2 - High dielectric constant porcelain composition - Google Patents
High dielectric constant porcelain compositionInfo
- Publication number
- JPS6051202B2 JPS6051202B2 JP57016809A JP1680982A JPS6051202B2 JP S6051202 B2 JPS6051202 B2 JP S6051202B2 JP 57016809 A JP57016809 A JP 57016809A JP 1680982 A JP1680982 A JP 1680982A JP S6051202 B2 JPS6051202 B2 JP S6051202B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- high dielectric
- composition
- capacitors
- porcelain composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明はチタン酸バリウムを主体とする高誘電率でかつ
緻密なセラミック構造を有する高誘電率磁器組成物に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-permittivity ceramic composition containing barium titanate as a main component and having a high dielectric constant and a dense ceramic structure.
従来より磁器コンデンサの組成物として、チタン酸バリ
ウムを主体とするものが数多く知られている。BACKGROUND ART Many ceramic capacitor compositions based mainly on barium titanate have been known.
チタン酸バリウムは周知のように、強誘電性を有する特
異な物質で高温では立方晶系のペロブスカイト形の構造
を有し、120℃以下ではC軸が僅かに伸びて正方晶と
なり、さらに0’C付近で斜方晶、−80’C付近で菱
面体晶へと変化する。上記120℃付近の相転移点をキ
ュリー点というが、このキュリー点を境にそれより高温
で常誘電性を示し、低温では強誘電性を示す。そして、
このキュリー点において、誘電率が約10000と極め
て高い値を示す。ここで、チタン酸バリウムだけでは常
温で高誘電率とはなり得ない。チタン酸バリウムのキュ
リー点付近の高誘電率を低温側に移動させることにより
、常温付近で適当な静電容量を有する小型のコンデンサ
を実用化することは従来より数多く行われている。誘電
率のピーク値のあられれる温度を移動させる添加剤はシ
フターと呼ばれ、BaSnO3、srsno3、cas
no3、PbSnO3、cusno3、Znsno3、
CdSnO3等のスズ酸塩、BaZrO3、ca2ro
3、sr2ro3等のジルコン酸塩およびSrTiO3
、PbTiO3のチタン酸塩が一般的に知られ、上記の
順にシフターとしての作用が強い。これらのシフターを
利用したチタン酸バリウム系磁器コンデンサは単板型リ
ード線付きタイプのものとして利用されてきた。しかし
ながら、最近積層チップ化技術が進歩し、30〜100
μm程度の誘電体シートが容易に得られ、この薄膜を電
極を挾持する形で幾層も積層したいわゆる積層セラミッ
クチップコンデンサが種々のエレクトロニクス業界に進
出してきており、従来の誘電体磁器組成物をかかる積層
用薄膜誘電体として利用されることが多くなつてきてい
る。し力士ながら、従来の単板型の磁気コンデンサでは
誘電体の厚みが100μ几〜10000μ几と厚いが、
積層セラミツクチツプコフンデンサでは10μ几〜20
μmと薄いため5〜1晧以上の電界強度を受ける。した
がつて従来の単板型コンデンサに比較してより電圧依存
性の小さい組成物が要求されている。また、誘電体層が
薄くなるにしたがい、セラミックの構造的な欠陥が特夕
性に出やすくなるので、結晶粒子が均一でかつ微細であ
ることと、空孔が少なくかつ小さいことが要求されてい
る。本発明は上記にかんがみ、種々の実験を積み重ねた
末、高誘電率でかつセラミックの構造欠陥が少なく、電
圧依存性の小さい、高耐圧な高誘電率磁器組成物を提供
できたものである。As is well known, barium titanate is a unique ferroelectric substance that has a cubic perovskite structure at high temperatures, and below 120°C, the C-axis slightly stretches to become a tetragonal crystal, and furthermore, the 0' It changes to orthorhombic crystal around C and rhombohedral crystal around -80'C. The above-mentioned phase transition point near 120° C. is called the Curie point, and the material exhibits paraelectricity at higher temperatures beyond the Curie point, and exhibits ferroelectricity at lower temperatures. and,
At this Curie point, the dielectric constant exhibits an extremely high value of approximately 10,000. Here, barium titanate alone cannot provide a high dielectric constant at room temperature. Many attempts have been made to commercialize small capacitors with appropriate capacitance near room temperature by moving the high dielectric constant of barium titanate near its Curie point to a lower temperature side. The additive that shifts the temperature at which the peak value of the dielectric constant occurs is called a shifter, and BaSnO3, srsno3, cas
no3, PbSnO3, cusno3, Znsno3,
stannates such as CdSnO3, BaZrO3, ca2ro
3, zirconate such as sr2ro3 and SrTiO3
, PbTiO3 titanates are generally known, and the effect as a shifter is stronger in the above order. Barium titanate ceramic capacitors using these shifters have been used as single-plate lead wire type capacitors. However, recently, stacked chip technology has progressed, and 30 to 100
Dielectric sheets of about μm size can be easily obtained, and so-called multilayer ceramic chip capacitors, in which many layers of these thin films are laminated with electrodes sandwiched between them, have entered various electronics industries, and conventional dielectric ceramic compositions have been replaced by multilayer ceramic chip capacitors. It is increasingly being used as such a thin film dielectric for lamination. Although he is a sumo wrestler, the dielectric thickness of conventional single-plate magnetic capacitors is as thick as 100 μL to 10,000 μL.
For laminated ceramic chip funda, 10 μL to 20
Because it is as thin as μm, it receives an electric field strength of 5 to 1 pm or more. Therefore, there is a need for a composition that has less voltage dependence than conventional single-plate capacitors. In addition, as the dielectric layer becomes thinner, structural defects in the ceramic become more likely to occur, so it is required that the crystal grains be uniform and fine, and that the pores be small and small. There is. In view of the above, and as a result of various experiments, the present invention has been able to provide a high dielectric constant ceramic composition that has a high dielectric constant, has few ceramic structural defects, has low voltage dependence, and has a high withstand voltage.
以下、実施例に基つき本発明の詳細な説明する。Hereinafter, the present invention will be described in detail based on examples.
まず、チタン酸バリウム(BaTiO3)を次のように
合成した。First, barium titanate (BaTiO3) was synthesized as follows.
すなわち、炭酸バリウム(BaCO3)と酸化チタン(
TlO2)を〔?〕/〔Ti)ゾ)比が1.000±0
.05の精度で混合し、1100〜11500Cで仮焼
後、粉砕して得た。That is, barium carbonate (BaCO3) and titanium oxide (
TlO2) [? ]/[Ti)zo) ratio is 1.000±0
.. The mixture was mixed with a precision of 0.05 C, calcined at 1100 to 11500 C, and then ground.
このBaTiO3にCeO2およびTiO2を〔Ce〕
/〔Ti〕÷害1合になるように添加し、混合して後、
バインダーを加えて造粒し、角板状に成型して1250
〜1350℃の範囲で焼成した。この後、銀電極を形成
した。下記の第1表は各組成における特性を焼成温度毎
に示したものである。Add CeO2 and TiO2 to this BaTiO3 [Ce]
/ [Ti] ÷ 1 cup of Ti and after mixing,
Add a binder and granulate it, form it into a square plate shape and make 1250
It was fired in the range of ~1350°C. After this, a silver electrode was formed. Table 1 below shows the characteristics of each composition at each firing temperature.
上記表から明らかなように、組成NO.2、3お4よび
4はEIA規格Y5■特性として利用てきることがわか
る。As is clear from the above table, composition NO. It can be seen that 2, 3, 4, and 4 can be used as EIA standard Y5■ characteristics.
すなわち、第1図に詳細な静電容量変化率を示すように
−30℃〜+85℃の温度範囲で+22%〜−82%の
規格内の変化率(20℃基準)を十分満足し、また一般
に市販されているY5■特性磁器コンデンサの酸電率1
0000前後のものと比較して同等の誘電率を示してい
る。第1表の末尾に従来例としてジルコン酸塩添加系の
Y5V特性組成物を示した。セラミックのグレインサイ
ズ(粒径)は本発明の組成物では1〜3μm前後である
が、従来例ではグレインサイズ10〜20μmと大きく
、ボアサイズが最大20μm前後である。組成NO.3
について第2図に示すような積層セラミックチップコン
デンサを試作した。In other words, as shown in the detailed capacitance change rate in Figure 1, it fully satisfies the standard change rate of +22% to -82% (20℃ standard) in the temperature range of -30℃ to +85℃, and Acid electric rate 1 of commonly commercially available Y5 ■ characteristic porcelain capacitors
It shows the same dielectric constant as that of around 0000. At the end of Table 1, a Y5V characteristic composition containing a zirconate salt is shown as a conventional example. The grain size (particle size) of the ceramic is around 1 to 3 μm in the composition of the present invention, but in the conventional example, the grain size is as large as 10 to 20 μm, and the maximum bore size is around 20 μm. Composition NO. 3
We prototyped a multilayer ceramic chip capacitor as shown in Figure 2.
このもの*,とジルコン酸塩系の積層セラミックチップ
コンデンサと比較対応した結果を下記の第2表に示す。
尚、第2図においてAは誘電体で電極間の厚さは35μ
M..Bはパラジウム電極、Cは銀端子電極である。上
記第2表から明らかなように従来の2倍の抗折強度と3
倍の破壊電圧を有することが判明した。Table 2 below shows the results of a comparison between this * and a zirconate-based multilayer ceramic chip capacitor.
In Figure 2, A is a dielectric and the thickness between the electrodes is 35μ.
M. .. B is a palladium electrode, and C is a silver terminal electrode. As is clear from Table 2 above, the bending strength is twice that of the conventional one, and 3
It was found that the breakdown voltage was twice as high.
以上述べたことから本発明の組成物はグレインが細かく
、ボアが少なく小さい緻密なセラミックが得られ、高誘
電率であり、誘電率の温度変化がEIA規格Y5■特性
を満足する磁気コンデンサ用として、とりわけ積層セラ
ミックチップコンデンサとしての用途に供することがで
きる。From the above, the composition of the present invention can be used for magnetic capacitors with fine grains, small bores, small and dense ceramics, high dielectric constant, and temperature change in dielectric constant satisfying EIA standard Y5■ characteristics. In particular, it can be used as a multilayer ceramic chip capacitor.
そして、従来の約3倍の破壊電圧値を有するため、積層
セラミックチップコンデンサでは誘電体厚みを従来の1
B程度まで薄くすることが可能であり、静電容量取得範
囲を従来の3倍まで拡大することができるといつた特徴
を有している等、産業的価値は極めて高い。尚、上記実
施例ではチタン酸バリウムを合成したが、市販のチタン
酸バリウムを用いてもかまわないものである。Since the breakdown voltage value is approximately three times that of conventional capacitors, the dielectric thickness of multilayer ceramic chip capacitors has been reduced to one level compared to conventional ones.
It has extremely high industrial value because it can be made as thin as B, and the capacitance acquisition range can be expanded to three times that of the conventional method. Although barium titanate was synthesized in the above example, commercially available barium titanate may also be used.
第1図は本発明の組成物に関する静電容量の温度変化率
の範囲を示す図、第2図は本発明の組成・物を適用した
積層セラミックチップコンデンサの断面図を示す図であ
る。FIG. 1 is a diagram showing the range of temperature change rate of capacitance for the composition of the present invention, and FIG. 2 is a diagram showing a cross-sectional view of a multilayer ceramic chip capacitor to which the composition/product of the present invention is applied.
Claims (1)
、酸化セリウム(CeO_2)2/3(7±1)モル部
及び酸化チタン(TiO_2)7±1モル部からなる高
誘電率磁器組成物。1. A high dielectric constant ceramic composition comprising 100 mol parts of barium titanate (BaTiO_3), 2/3 (7±1) mol parts of cerium oxide (CeO_2), and 7±1 mol parts of titanium oxide (TiO_2).
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57016809A JPS6051202B2 (en) | 1982-02-04 | 1982-02-04 | High dielectric constant porcelain composition |
| DE8383100980T DE3366166D1 (en) | 1982-02-04 | 1983-02-02 | Ceramic composition of high dielectric constant |
| EP19830100980 EP0085941B1 (en) | 1982-02-04 | 1983-02-02 | Ceramic composition of high dielectric constant |
| CA000420798A CA1188089A (en) | 1982-02-04 | 1983-02-03 | Ceramic composition of high dielectric constant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57016809A JPS6051202B2 (en) | 1982-02-04 | 1982-02-04 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58135507A JPS58135507A (en) | 1983-08-12 |
| JPS6051202B2 true JPS6051202B2 (en) | 1985-11-13 |
Family
ID=11926474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57016809A Expired JPS6051202B2 (en) | 1982-02-04 | 1982-02-04 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6051202B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02267164A (en) * | 1989-04-07 | 1990-10-31 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
| JP2697112B2 (en) * | 1989-04-07 | 1998-01-14 | 松下電器産業株式会社 | Method for manufacturing reduction-reoxidation type semiconductor porcelain element |
| DE69209417T2 (en) * | 1991-09-25 | 1996-11-28 | Murata Manufacturing Co | Non-reducible dielectric ceramic composition |
| CN102399083B (en) * | 2010-09-14 | 2013-08-21 | 中国钢铁股份有限公司 | Dielectric ceramic composition |
-
1982
- 1982-02-04 JP JP57016809A patent/JPS6051202B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58135507A (en) | 1983-08-12 |
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