JPS6054469A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6054469A JPS6054469A JP58161898A JP16189883A JPS6054469A JP S6054469 A JPS6054469 A JP S6054469A JP 58161898 A JP58161898 A JP 58161898A JP 16189883 A JP16189883 A JP 16189883A JP S6054469 A JPS6054469 A JP S6054469A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- resistance value
- polysilicon
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58161898A JPS6054469A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58161898A JPS6054469A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6054469A true JPS6054469A (ja) | 1985-03-28 |
| JPH0426220B2 JPH0426220B2 (2) | 1992-05-06 |
Family
ID=15744106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58161898A Granted JPS6054469A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054469A (2) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103935A (ja) * | 1988-10-13 | 1990-04-17 | Toshiba Corp | 半導体装置の製造方法 |
-
1983
- 1983-09-05 JP JP58161898A patent/JPS6054469A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103935A (ja) * | 1988-10-13 | 1990-04-17 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0426220B2 (2) | 1992-05-06 |
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