JPS606076B2 - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS606076B2 JPS606076B2 JP51061440A JP6144076A JPS606076B2 JP S606076 B2 JPS606076 B2 JP S606076B2 JP 51061440 A JP51061440 A JP 51061440A JP 6144076 A JP6144076 A JP 6144076A JP S606076 B2 JPS606076 B2 JP S606076B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- type semiconductor
- gas diffusion
- oxygen
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Description
【発明の詳細な説明】
本発明は半導体の光増感電解現象を利用した、光エネル
ギーを直接電気エネルギーに変換する光電変換装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoelectric conversion device that directly converts light energy into electrical energy using the photosensitized electrolytic phenomenon of semiconductors.
上記装置はアノードとしてｎ型半導体、カソードとして
Ｐ型半導体よりなる一対の電極（一方に対極として白金
等の導電極を用いる場合もある）を電解液中に浸潰した
構成をなし、前記半導体電極にその半導体の禁止帯幅以
上のエネルギーを有する光を照射すれば光起電力効果に
より熱力学的に定まる電極電位がＰ型半導体では貴に、
ｎ型半導体では卑に現れ、且つこの電極電位の推移は照
射した光の強度に依存するものであり、このことは半導
体電極が光エネルギーを吸収して光電池としての働きを
なしうるものであると知られている。The above device has a structure in which a pair of electrodes (one of which is made of an n-type semiconductor as an anode and a p-type semiconductor as a cathode (a conductive electrode such as platinum may be used as a counter electrode) is immersed in an electrolyte, and the semiconductor electrode When a P-type semiconductor is irradiated with light having an energy higher than the forbidden band width of the semiconductor, the thermodynamically determined electrode potential due to the photovoltaic effect becomes very high for a P-type semiconductor.
In n-type semiconductors, it appears as a base, and the transition of this electrode potential depends on the intensity of the irradiated light.This means that the semiconductor electrode can absorb light energy and function as a photovoltaic cell. Are known.
。又、光エネルギーを電気エネルギーに変換する過程に
おいて、半導体電極は水を分解し、ｎ型半導体電極では
アノード反応により酸素を生成し、Ｐ型半導体電極では
カソード反応により水素を生成するものである。. In addition, in the process of converting light energy into electrical energy, the semiconductor electrode decomposes water, the n-type semiconductor electrode generates oxygen through an anode reaction, and the p-type semiconductor electrode generates hydrogen through a cathode reaction.
本発明は上記装置においてｎ型半導体電極のアノード反
応に着目し、カソ−ド‘こガス拡散電極を用いることに
より、上記ｎ型半導体電極より発生する酸素をガス拡散
電極に供給せしめる構成となし、光照射のみで両極にお
いては水を介して夫々酸素の生成、消費という完全サイ
クルが行なわれ、且つこれら電極間で電気的出力を得る
という新規な光電変換装置を提供するものである。The present invention focuses on the anode reaction of the n-type semiconductor electrode in the above device, and has a structure in which oxygen generated from the n-type semiconductor electrode is supplied to the gas diffusion electrode by using a cathode and a gas diffusion electrode, The object of the present invention is to provide a novel photoelectric conversion device in which a complete cycle of oxygen generation and consumption is performed at both electrodes through water only by light irradiation, and an electrical output is obtained between these electrodes.
以下本発明を図面に基づき説明するに、第１図は本装置
の構成図を示し、、１は容器２の一側壁に配したガス拡
散電極であり、、通常空気電池等に用いられる空気電極
の如く銀等の触媒を添加せるニッケル暁緒板よりなる。
３はＴｉ０２．ＳｒＴｉ０２などの不溶性のｎ型半導体
電極であり、、１規定のカ性カリよりなる電解液４に浸
潰されている。The present invention will be explained below based on the drawings. Fig. 1 shows a configuration diagram of the present device, 1 is a gas diffusion electrode arranged on one side wall of a container 2, and is an air electrode usually used in air batteries etc. It consists of a nickel metal plate to which a catalyst such as silver can be added.
3 is Ti02. It is an insoluble n-type semiconductor electrode such as SrTi02, and is immersed in an electrolytic solution 4 made of 1N caustic potash.
５は容器の他側壁に設けた石英板よりなる受光窓、６は
前記一対の電極間に介挿された負荷抵抗、７はｎ型半導
体電極３より発生する酸素をガス拡散電極１の一面に形
成せる空気部８に供給するための酸素供給管である。5 is a light-receiving window made of a quartz plate provided on the other side wall of the container; 6 is a load resistor inserted between the pair of electrodes; 7 is a device for transmitting oxygen generated from the n-type semiconductor electrode 3 to one surface of the gas diffusion electrode 1; This is an oxygen supply pipe for supplying the air portion 8 to be formed.
第２図は両電極の光照射時における単極特性図で電極電
位は飽和甘東電極を用いて測定しその変位傾向を示すも
のであり、通常金属（化合物も含む）上で起こる酸素発
生及び酸素還元は夫々特性（１），（０）で示されるが
、ｎ型半導体電極３に光照射すると特性（１）は特性（
ｍ）に移行する。Figure 2 is a monopolar characteristic diagram of both electrodes during light irradiation. The electrode potential is measured using a saturated Amato electrode and shows its displacement tendency. Oxygen reduction is shown by characteristics (1) and (0), respectively, but when the n-type semiconductor electrode 3 is irradiated with light, characteristic (1) changes to characteristic (
Move to m).
従ってｎ型半導体電極上で進行する酸素発生の特性（ｍ
）とガス拡散電極上で進行する酸素還元の特性（０）よ
り、これら一対の電極を組合せれば電池系が構成される
。さて、第１図に示す構成において前記ｎ型半導体電極
３に受光窓５を介してその半導体の禁止帯幅以上のエネ
ルギーを有する光を照射すると励起されその光電極反応
により水を分解し酸素が発生する。Therefore, the characteristics of oxygen evolution progressing on the n-type semiconductor electrode (m
) and the characteristic (0) of oxygen reduction proceeding on the gas diffusion electrode, a battery system is constructed by combining these pair of electrodes. Now, in the configuration shown in FIG. 1, when the n-type semiconductor electrode 3 is irradiated with light having an energy greater than the bandgap of the semiconductor through the light receiving window 5, it is excited and the photoelectrode reaction decomposes water and generates oxygen. Occur.
即ち
〔Ｎ〕＋水ｖ−を‐十が十 ……■（光
照射によるｎ型半導体の励起）が十十日２０−１′２〕
２十２Ｈ＋ ……■（ｎ型半導体電極の
電極反応）ここで■式で発生せる０２（酸素）は酸素供
給管７を介してガス拡散電極１の空気部８に導びかれ、
ガス拡散電極においては下式に示すように酸素還元反応
が生じ水が生成される。That is, [N] + water v- - 10 is 10...■ (excitation of n-type semiconductor by light irradiation) is 10 days 20-1'2]
212H+...■ (Electrode reaction of n-type semiconductor electrode) Here, 02 (oxygen) generated by the formula ■ is led to the air portion 8 of the gas diffusion electrode 1 via the oxygen supply pipe 7,
At the gas diffusion electrode, an oxygen reduction reaction occurs as shown in the equation below, and water is produced.
１／幻２十が十十を‐一日２０ ……■
上記■，■，■式より明らかなように本装置においては
半導体電極への光照射により、両極において夫々酸素発
生、酸素消費という完全サイクルが行なわれる。1/Illusion of 20 is 10 - 20 a day...■
As is clear from the above formulas (1), (2), and (2), in this device, by irradiating the semiconductor electrode with light, a complete cycle of oxygen generation and oxygen consumption is performed at each of the two electrodes.
又、第３図は電池としての電圧−電流曲線を示すもので
あり、ｎ型半導体電極としてＴｉ０２単結晶薄板（表面
積１０の厚み３肋）、ガス拡散電極（２５の）ｔ電解液
として１規定のカ性カリ水溶液、光源として５００Ｗの
クセノン灯を用いた場合の特性を示す。Furthermore, Figure 3 shows the voltage-current curve as a battery, in which the n-type semiconductor electrode is a TiO2 single crystal thin plate (surface area: 10, thickness: 3 ribs), the gas diffusion electrode (25 mm), and the t electrolyte: 1N. The characteristics of a caustic potassium aqueous solution using a 500W xenon lamp as the light source are shown below.
上述した如く本装置は、ｎ型半導体電極とガス拡散電極
と電解液とを備え、光照射によりｎ型半導体電極に発生
する酸素を対極のガス拡散電極に供給して酸素を還元せ
しめるという反応を繰返すものであり、従来の各種燃料
電池のように燃料或いは電解液を消費するものに比し完
全サイクルが絹めて電気的出力が得られるという新規な
光電変換装置を提供できるものである。As mentioned above, this device is equipped with an n-type semiconductor electrode, a gas diffusion electrode, and an electrolytic solution, and performs a reaction in which oxygen generated in the n-type semiconductor electrode by light irradiation is supplied to the opposite gas diffusion electrode to reduce the oxygen. It is possible to provide a novel photoelectric conversion device that can obtain electrical output in a complete cycle compared to conventional various fuel cells that consume fuel or electrolyte.
図は本発明に係り、第１図は本発明光電変換装置の構成
を示す縦断面図、第２図は単極特性図、第３図は電池と
しての電圧−電流曲線図である。
１…ガス拡散電極、２…容器、３・・・ｎ型半導体電極
、４・・・電解液、５・・・石英板、６・・・負荷抵抗
、７・・・酸素供Ｖ給管。
第１図
第２図
第３図The figures relate to the present invention; FIG. 1 is a longitudinal cross-sectional view showing the configuration of the photoelectric conversion device of the present invention, FIG. 2 is a monopolar characteristic diagram, and FIG. 3 is a voltage-current curve diagram as a battery. DESCRIPTION OF SYMBOLS 1... Gas diffusion electrode, 2... Container, 3... N-type semiconductor electrode, 4... Electrolyte, 5... Quartz plate, 6... Load resistance, 7... Oxygen supply V supply pipe. Figure 1 Figure 2 Figure 3
Claims (1)
前記半導体電極に光照射しその光励起による水分解反応
で生成される酸素を前記ガス拡散電極に供給せしめ、両
電極間より電気的出力を得ることを特徴とする光電変換
装置。1 comprising an n-type semiconductor electrode, a gas diffusion electrode, and an electrolyte,
A photoelectric conversion device characterized in that the semiconductor electrode is irradiated with light and oxygen generated by a water splitting reaction due to the photoexcitation is supplied to the gas diffusion electrode to obtain an electrical output from between both electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51061440A JPS606076B2 (en) | 1976-05-25 | 1976-05-25 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51061440A JPS606076B2 (en) | 1976-05-25 | 1976-05-25 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52143791A JPS52143791A (en) | 1977-11-30 |
| JPS606076B2 true JPS606076B2 (en) | 1985-02-15 |
Family
ID=13171121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51061440A Expired JPS606076B2 (en) | 1976-05-25 | 1976-05-25 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS606076B2 (en) |
-
1976
- 1976-05-25 JP JP51061440A patent/JPS606076B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52143791A (en) | 1977-11-30 |
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