JPS6063929A - Optical processor for plate object - Google Patents
Optical processor for plate objectInfo
- Publication number
- JPS6063929A JPS6063929A JP59137156A JP13715684A JPS6063929A JP S6063929 A JPS6063929 A JP S6063929A JP 59137156 A JP59137156 A JP 59137156A JP 13715684 A JP13715684 A JP 13715684A JP S6063929 A JPS6063929 A JP S6063929A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- focal plane
- ring
- entire surface
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はウェハの位置決め方法およびその装置、特にプ
ロジェクションアライナ−等の露光装置に関するもので
ある。たとえば、マスクパターンを光学的に転写するた
めの露光装置に関しては、特願昭43−4973号に示
されている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer positioning method and apparatus, particularly to an exposure apparatus such as a projection aligner. For example, an exposure apparatus for optically transferring a mask pattern is disclosed in Japanese Patent Application No. 4973/1983.
従来の位置決め方法は第1図に示すように、基準リング
1の下面は正確に焦点面3に位置決めされ固定されて(
・る。一方、ウェハ2はウェハチャック4上に真空で吸
着されている。ウェハチャックホルダー5にはスプリン
グ6が内蔵されており、この押しつけ力によりウニノ・
の周辺が基準り/グ忙押しつけられている。これにより
ウェハは焦点面に位置合わせされたことになっている。As shown in FIG. 1, in the conventional positioning method, the lower surface of the reference ring 1 is accurately positioned and fixed at the focal plane 3 (
・Ru. On the other hand, the wafer 2 is vacuum-adsorbed onto the wafer chuck 4. The wafer chuck holder 5 has a built-in spring 6, and this pressing force causes the unino
The area around the area is being pushed to a standard/gu. This means that the wafer is aligned with the focal plane.
ウェハな鏡面研摩が終了した所でウェハチャック上に乗
せて真空吸着してウニノ・上面の平面度を測定すると±
5μ以内に入っている。ところが、拡散、CVDなとの
熱処理を経た後では、同じ条件で測定して±15μm程
度になっていることがある。焦点深度は、第2図に示す
ように焦点面10の上下Vc11で示すように±10μ
ある。ウェハの平面度が±5μm以内であればウニノ・
の全面は焦点深度内に入ることになる。しかし実際の工
程を径だウェハは±15μもあり第2図に示すように凸
な形状のウェハ12の表面の一部又は凹な形状のウェハ
130表面の一部は焦点深度外に出てしまい、ここでは
十分な解像度が得られないという問題が生じている。When the mirror polishing of the wafer is completed, the flatness of the top surface is measured by placing it on a wafer chuck and vacuum suction.
It is within 5μ. However, after heat treatment such as diffusion or CVD, the difference may be about ±15 μm when measured under the same conditions. The depth of focus is ±10μ as shown by Vc11 above and below the focal plane 10 as shown in FIG.
be. If the flatness of the wafer is within ±5μm, Unino
The entire surface will be within the depth of focus. However, in the actual process, the diameter of the wafer is ±15μ, and as shown in FIG. , the problem here is that sufficient resolution cannot be obtained.
本発明の目的は現実の±15μ程度の平面度であるウェ
ハ表面の全面をアライナ−などの焦点深度内に入れる技
術を提供することである。An object of the present invention is to provide a technique for bringing the entire surface of a wafer, which has a flatness of approximately ±15 μm in reality, into the depth of focus of an aligner or the like.
本発明は、ウェハの周辺を基準面に押しつけて、平行出
しをしたあと、そのウェハが凸であるか凹であるかをた
とえばエアマイクロメーターなどを用いてウェハ上の何
点かを測定してめる。次に、ウェハ上のどの高さに焦点
面があったとしたら最も有効に全表面が焦点深度内に入
るかを計算する。In the present invention, after pressing the periphery of the wafer against a reference surface and aligning it, the wafer is measured at several points on the wafer using an air micrometer or the like to determine whether the wafer is convex or concave. Melt. Next, it is calculated at what height on the wafer the focal plane would most effectively fit the entire surface within the depth of focus.
このウェハにとって理想的な焦点面が基準面からどれだ
けズしているかを計算してめ、理想的な焦点面が基準面
に一致するようにウェハをウェハチャンクに乗せたまま
移動してやる。しかるのち露光する。基準面を光学系の
焦点に合致させておけば、焦点深度はレジンで20μm
あるので+15μmの凸ウェハも一15μの凹ウェハも
完全に焦点深度内にその表面が含まれるので全面にわた
って良好なプロジェクション焼付ができる。すなわち、
本発明の要旨は非接触状態で被処理板状物(ウェハ)と
焦点面との相対位置を検出する装置を有する光学処理装
置(アライナすなわち露光装置)としたものである。Calculate how far the ideal focal plane for this wafer deviates from the reference plane, and then move the wafer on the wafer chunk so that the ideal focal plane coincides with the reference plane. Then it is exposed. If the reference plane is aligned with the focal point of the optical system, the depth of focus is 20 μm with resin.
Therefore, both the +15 .mu.m convex wafer and the -15 .mu.m concave wafer have their surfaces completely included within the depth of focus, so that good projection printing can be performed over the entire surface. That is,
The gist of the present invention is an optical processing apparatus (aligner or exposure apparatus) having a device for detecting the relative position of a plate-shaped object (wafer) to be processed and a focal plane in a non-contact state.
以下、この廃明の1つの実施例を説明する。第3図にお
いて、21はパルスモータ−であり継手を介して22の
精密ネジ部とつながっている23は感圧素子部であり、
23と22の間の面は十分マサツを小さくして220回
転が24に伝わらないようにしである。25は平行出し
のための球面座であり、24はその受けである。An example of this method will be described below. In FIG. 3, 21 is a pulse motor, and 23 is a pressure sensitive element connected to a precision screw part 22 via a joint.
The surface between 23 and 22 is made sufficiently small so that 220 rotations are not transmitted to 24. 25 is a spherical seat for parallelization, and 24 is its receiver.
26はウェハチャックであり真空でウェハ27を吸着し
ている。28は平行出し用基準リングである。29はエ
アマイクロメーターである。A wafer chuck 26 holds the wafer 27 under vacuum. 28 is a reference ring for parallel alignment. 29 is an air micrometer.
はじめ、21のパルスモータ−の回転により22が上昇
してウェハ27を上昇させていく。基準リング28にウ
ェハの一部が接触すると球面座25の作用により平行出
しがなされる。さらにわずか精密ネジ22が上昇すると
感圧素子がごくわずか(1μ以内)変形して設定圧力を
検出するとモーター21が停止される。ウェハは設定圧
力で基準リング28に押しつけられたことになる。Initially, the rotation of the pulse motor 21 causes the motor 22 to rise, thereby raising the wafer 27. When a part of the wafer comes into contact with the reference ring 28, parallelization is achieved by the action of the spherical seat 25. When the precision screw 22 further rises slightly, the pressure sensitive element is deformed very slightly (within 1 μm), and when the set pressure is detected, the motor 21 is stopped. The wafer will now be pressed against the reference ring 28 with the set pressure.
しかるのちエアマイクロ29でウェハ表面が基準リング
の下面30、すなわち基準面に対してどれだけ各部にお
いて変位しているかを測定する。Thereafter, the air micrometer 29 measures how much the wafer surface is displaced at each portion with respect to the lower surface 30 of the reference ring, that is, the reference surface.
それらの変位量のたとえば平均を取るとする。For example, let us take the average of those displacement amounts.
この平均位置に光学系の焦点面があればウェハ全面は十
分−に光範囲内に入るであろう。If the focal plane of the optical system is located at this average position, the entire surface of the wafer will be sufficiently within the optical range.
ココテは平均を考えたが、エアマイクロメーターの設置
場所やウェハの面の曲がり方などにより、変位単に対し
てどのような計算を行うと最も有効な焦点位置が決定で
きるかはいろいろ考えられる。Kokote considered the average, but there are many ways to calculate the most effective focal position for each unit of displacement, depending on the installation location of the air micrometer, the curve of the wafer surface, etc.
さて、光学系の焦点面31は、基準面30に対して平行
にたとえば100μm下げた所に設定しである。前述の
変位単の平均値はウェハか凸の場合にはプラスにウェハ
が凹の場合にはマイナスになるように定めておき、この
変位量の平均値に100μm加えた値だけパルスモータ
−を駆動してウェハを下げてやる。Now, the focal plane 31 of the optical system is set parallel to the reference plane 30 and lowered by, for example, 100 μm. The above-mentioned average value of the displacement unit is determined to be positive when the wafer is convex and negative when the wafer is concave, and the pulse motor is driven by the value of this average displacement plus 100 μm. and lower the wafer.
このようにするとウェハの凹凸の平均的な高さに光学系
の焦点面が設定できてウェハ全面を焦点深度内に入りる
ことかできる。実際に露光するときは、マイクロメータ
ー29がじゃまになるので、ウェハ及びその保持系全体
をエアベアリングなどで焦点面に平行に高さが変わらな
いように移動させて、マイクロメーター29がウェハ2
7−ヒに来ない位置で露光する必要がある。In this way, the focal plane of the optical system can be set at the average height of the unevenness of the wafer, and the entire surface of the wafer can be placed within the depth of focus. During actual exposure, the micrometer 29 will get in the way, so move the wafer and its entire holding system parallel to the focal plane using air bearings or the like so that the height does not change so that the micrometer 29
7- It is necessary to expose at a position that does not come to H.
このようにして、凹凸の大きなウェハの表面全体を焦点
深度内に入れて露光することができる。In this way, the entire surface of the wafer with large irregularities can be exposed within the depth of focus.
なお、感圧素子23の変形をも問題にする場合には、こ
の変形量がたとえば1μInであるとして、パルスモー
タ−を計算値よりさらに1μIn下げる迄駆動すれば良
い。If deformation of the pressure sensitive element 23 is also a problem, assuming that the amount of deformation is, for example, 1 μIn, the pulse motor may be driven until the deformation is further reduced by 1 μIn from the calculated value.
本発明により、±15μm程度の平面度である現状のウ
ェハの表面全域が±10μの光学系の焦点範囲内に入る
ことになり、3μmプロセスなどの微細なプロセスにお
いてパターンの解像度不良が発生しなくなり、LSIチ
ップの歩留が向上する。According to the present invention, the entire surface of the wafer, which currently has a flatness of approximately ±15 μm, will be within the focal range of the optical system of ±10 μm, and pattern resolution defects will no longer occur in fine processes such as 3 μm processes. , the yield of LSI chips is improved.
第1図は従来技術よりなるウェハの表面の位置決め方法
を示す断面図、第2図は従来の方法ではウェハの表面の
一部が光学系の焦点深度内に入らないことを示す説明図
、第3図は本発明の−実施例を示すウニ/・の表面の位
置決め機構の断面図である。
2・・・ウェハ、10・・・焦点面、23・・・感圧素
子部。
代理人 弁理士 高 橋 明 失
策 1 図
ワ
第 2 目
/2FIG. 1 is a sectional view showing a method of positioning the surface of a wafer according to the prior art; FIG. FIG. 3 is a sectional view of a surface positioning mechanism for a sea urchin, showing an embodiment of the present invention. 2... Wafer, 10... Focal plane, 23... Pressure sensitive element section. Agent Patent Attorney Akira Takahashi Mistake 1 Figure 2 Part 2
Claims (1)
)上記被処理板状物に所定の光学処理を施すための光学
系と (C)上記光学系の焦点面と上記被処理板状物の相対位
置を検出するための上記被処理板状物に対して非接触の
位置検出手段 よりなる板状物の光学処理装置。[Claims] IJa) A plate-shaped object holding section that holds a plate-shaped object to be processed; and (1)
) an optical system for performing predetermined optical processing on the plate-like object to be processed; and (C) an optical system for detecting the relative position of the focal plane of the optical system and the plate-like object to be processed; On the other hand, an optical processing device for a plate-shaped object includes a non-contact position detection means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59137156A JPS6063929A (en) | 1984-07-04 | 1984-07-04 | Optical processor for plate object |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59137156A JPS6063929A (en) | 1984-07-04 | 1984-07-04 | Optical processor for plate object |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12836778A Division JPS5555529A (en) | 1978-10-20 | 1978-10-20 | Method of positioning wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6063929A true JPS6063929A (en) | 1985-04-12 |
Family
ID=15192125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59137156A Pending JPS6063929A (en) | 1984-07-04 | 1984-07-04 | Optical processor for plate object |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063929A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922868A (en) * | 1972-06-20 | 1974-02-28 | ||
| JPS5330878A (en) * | 1976-09-03 | 1978-03-23 | Fujitsu Ltd | Focus adjusting device in projection type exposure apparatus |
| JPS5359371A (en) * | 1976-11-10 | 1978-05-29 | Hitachi Ltd | Mask alignment unit |
| JPS5375773A (en) * | 1976-12-17 | 1978-07-05 | Fujitsu Ltd | Automatic focussing unit |
-
1984
- 1984-07-04 JP JP59137156A patent/JPS6063929A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922868A (en) * | 1972-06-20 | 1974-02-28 | ||
| JPS5330878A (en) * | 1976-09-03 | 1978-03-23 | Fujitsu Ltd | Focus adjusting device in projection type exposure apparatus |
| JPS5359371A (en) * | 1976-11-10 | 1978-05-29 | Hitachi Ltd | Mask alignment unit |
| JPS5375773A (en) * | 1976-12-17 | 1978-07-05 | Fujitsu Ltd | Automatic focussing unit |
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