JPS6065712U - エツクス線写真観察装置 - Google Patents

エツクス線写真観察装置

Info

Publication number
JPS6065712U
JPS6065712U JP15479583U JP15479583U JPS6065712U JP S6065712 U JPS6065712 U JP S6065712U JP 15479583 U JP15479583 U JP 15479583U JP 15479583 U JP15479583 U JP 15479583U JP S6065712 U JPS6065712 U JP S6065712U
Authority
JP
Japan
Prior art keywords
panel
observation device
ray photograph
photograph observation
holding frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15479583U
Other languages
English (en)
Inventor
森本　たつひこ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP15479583U priority Critical patent/JPS6065712U/ja
Publication of JPS6065712U publication Critical patent/JPS6065712U/ja
Pending legal-status Critical Current

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Landscapes

  • Apparatus For Radiation Diagnosis (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図および第２図は従来例の断面図、第３図はこの考
案の第１の実施例の断面図、第４図はその斜視図、第５
図、第６図、第７図、第８図、第９図および第１０図は
それぞれ第２、第３、第４、第５、第６および第７の各
実施例の断面図、第１１図は第８の実施例の正面図であ
る。 １２・・・パネル、１３・・・保持枠、１４・・・挟持
溝、１５・・・フィルム。

Claims (4)

    【実用新案登録請求の範囲】
  1. （１）フィルム当接用の透光性パネルと、このパネルの
    上端の保持枠と、この保持枠部において前記パネルの表
    面にのぞむ入口を有しこの入口から前記パネル表面に対
    して傾斜または湾曲する姿勢で形成したフィルム上縁挟
    持溝とを備えたエックス線写真観察装置。
  2. （２）前記挟持溝が、その入口から底部に向かうにつれ
    て前記パネル表面から遠ざかる状態に形成されている実
    用新案登録請求の範囲第（１）項記載のエックス線写真
    観察装置。
  3. （３）前記挟持溝が前記パネル表面から前方に向かって
    遠ざかる状態に形成されている実用新案登録請求の範囲
    第（２）項記載のエックス線写真観察装置。
  4. （４）前記保持枠が前記パネルの横幅全長にわたるもの
    であり、かつ前記挟持溝が前記保持枠のほぼ全長にわた
    る通し溝に形成されている実用新案登録請求の範囲第（
    １）項記載のエックス線写真観察装置。
JP15479583U 1983-10-05 1983-10-05 エツクス線写真観察装置 Pending JPS6065712U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15479583U JPS6065712U (ja) 1983-10-05 1983-10-05 エツクス線写真観察装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15479583U JPS6065712U (ja) 1983-10-05 1983-10-05 エツクス線写真観察装置

Publications (1)

Publication Number Publication Date
JPS6065712U true JPS6065712U (ja) 1985-05-10

Family

ID=30342072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15479583U Pending JPS6065712U (ja) 1983-10-05 1983-10-05 エツクス線写真観察装置

Country Status (1)

Country Link
JP (1) JPS6065712U (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS424966Y1 (ja) * 1964-01-08 1967-03-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS424966Y1 (ja) * 1964-01-08 1967-03-15

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

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