JPS607191A - Method of producing circuit board and device therefor - Google Patents
Method of producing circuit board and device thereforInfo
- Publication number
- JPS607191A JPS607191A JP11464983A JP11464983A JPS607191A JP S607191 A JPS607191 A JP S607191A JP 11464983 A JP11464983 A JP 11464983A JP 11464983 A JP11464983 A JP 11464983A JP S607191 A JPS607191 A JP S607191A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sputtering
- vacuum
- metal
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 238000000992 sputter etching Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 44
- 150000002500 ions Chemical class 0.000 description 17
- 235000013405 beer Nutrition 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000002436 steel type Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明はプリント回路等を形成するリジット板、フレキ
シブル板などの回路基板の製造方法及びその装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for manufacturing circuit boards such as rigid boards and flexible boards that form printed circuits and the like.
プリント回路基板に要求される特性の一つは絶縁基板と
その上の積層される層とが容易にはがれないことである
。One of the characteristics required of a printed circuit board is that the insulating substrate and the layers stacked thereon cannot be easily separated.
接着剤を用いた従来の方法ではプリント回路基板の性能
が接着剤の性能に依存してしまうことから、最近では絶
縁基板に直接に導電層を積層する方法が提案されている
。例えば絶縁基板上に真空蒸着法、イオンブレーティン
グ法、スパッタリング法により銅を直接積層し或いは下
地金属を介して銅層を積層する方法がそれである。しか
しながら、この様な接着剤を用いない方法においても、
単に従来知られている物理的気相めっきを適用したとい
う段階にとどまっており、強固な接合を得るための具体
的な処理方法や下地金属の選択等につき未だ良好な結果
ないし手段が得られていなかった。In the conventional method using an adhesive, the performance of the printed circuit board depends on the performance of the adhesive, so recently a method has been proposed in which a conductive layer is directly laminated on an insulating substrate. For example, there is a method in which copper is directly deposited on an insulating substrate by a vacuum evaporation method, an ion blasting method, or a sputtering method, or a copper layer is deposited via a base metal. However, even in such a method that does not use adhesive,
It remains at the stage of simply applying conventionally known physical vapor phase plating, and good results or methods have not yet been obtained regarding specific processing methods or selection of base metals to obtain strong bonding. There wasn't.
本発明者は上記従来技術を検討し、さらに良好な回路基
板を形成すべく種々試みた結果、２本発明の製造方法及
びその装置を発明するに至った。すなわち、本発明は、
真空中で絶縁基板に対してイオン照射によりスバ・７タ
エツチングし、次に引続いて真空中で前記絶縁基板と密
着性のよい金属を第１層としてスパッタリングし、次ぎ
に引続いて真空中で前記第１層及び表層である鋼種の両
方に密着性のよい金属を第２層としてスパッタリング゛
し、さらに引続いて真空中で前記銅層をスパッタリング
形成することを特徴とする回路基板の製造方法であり、
またその製造方法を実施するため、排気及びガス導入系
を備えた真空室と、該真空室内で被処理体を円軌道に沿
って移動させる移動機構とを備え、前記円軌道の分割さ
れた各円弧位置に被処理体の移動方向に沿ってイオン照
射ガン、第１Ｎ金属のスパッタリングを行うターゲット
、第２層金属のスパッタリングを行うターゲソ］−１及
び銅のスパッタリングを行うターゲットをそれぞれ配置
したことを特徴とする回路基板の製造装置である。The inventor of the present invention has studied the above-mentioned prior art and has made various attempts to form a better circuit board, and as a result, has come up with the two manufacturing methods and apparatus of the present invention. That is, the present invention
The insulating substrate is etched by ion irradiation in a vacuum, and then a metal that has good adhesion to the insulating substrate is sputtered as a first layer in a vacuum. A method for manufacturing a circuit board, comprising sputtering a metal with good adhesion to both the first layer and the steel type of the surface layer as a second layer, and subsequently sputtering the copper layer in a vacuum. and
In addition, in order to carry out the manufacturing method, a vacuum chamber equipped with an exhaust and gas introduction system, and a movement mechanism for moving the object to be processed along a circular orbit within the vacuum chamber are provided, and each of the divided parts of the circular orbit is An ion irradiation gun, a target for sputtering the first N metal, a target for sputtering the second layer metal]-1 and a target for sputtering copper were placed at circular arc positions along the moving direction of the object to be processed. This is a featured circuit board manufacturing device.
さらに、具体的に説明する。回路基板の製造は絶縁基板
に対してまず穴あけ等の加工を施し、洗滌を行った後に
金属層をめっきすることにより行う。絶縁基板としては
、各種のリジット板やポリイミド等のフレキシブル板が
用いられる。本発明はこの絶縁基板に対してまず、真空
中でアルゴンイオンをイオン照射することにより絶縁基
板をスパッタエツチングし、これにより絶縁基板の表面
を密着性のよい粗面にする。次ぎにスパッタエツチング
された絶縁基板を大気中で取出すことなく、引続き真空
中で該基板に第１層をスパッタリングして積層する。第
１層金属としては絶遠基板との密着性の良好な金属が要
求される。本発明者らは銅のエツチング液である塩化第
二鉄溶液によってエツチングできる金属の中から、前記
要求に応するものとしてモリブデンがポリイミイド絶縁
基板に適していることを見出した。この他、白金、ニッ
ケル、及びそれらの合金でも第１層として採用できる。Further, it will be explained in detail. The production of circuit boards is carried out by first performing processing such as drilling holes on an insulating board, cleaning it, and then plating a metal layer. As the insulating substrate, various rigid plates and flexible plates such as polyimide are used. In the present invention, the insulating substrate is first subjected to sputter etching by irradiating the insulating substrate with argon ions in a vacuum, thereby making the surface of the insulating substrate a rough surface with good adhesion. Next, without taking the sputter-etched insulating substrate out into the atmosphere, a first layer is subsequently sputtered and laminated on the substrate in a vacuum. The first layer metal is required to be a metal that has good adhesion to the substrate. The present inventors have discovered that among metals that can be etched with a ferric chloride solution, which is a copper etching solution, molybdenum is suitable for polyimide insulating substrates as it satisfies the above requirements. In addition, platinum, nickel, and alloys thereof can also be used as the first layer.
次に本発明では第１層形成後、引続き真空中で第２層を
スパッタリングする。これは第１Ｎであるモリブデン等
の上に直接銅層をスパッタリングする場合にはモリブデ
ン層と銅層の接合が強固でないことがテストから判明し
たことがら、第１層と銅層との間にさらに第２層を介在
させて強度を上げるためである。本発明者は前記と同様
に塩化第２鉄でエツチングできる金属の中から種々テス
トした結果、ニッケル含有のステンレス銅、たとえば５
ＵＳ３０４が第２層として良好であることを見出した。Next, in the present invention, after forming the first layer, a second layer is subsequently sputtered in a vacuum. This is because tests have shown that the bond between the molybdenum layer and the copper layer is not strong when sputtering the copper layer directly on top of molybdenum, etc., which is the first N. This is to increase the strength by interposing the second layer. As a result of testing various metals that can be etched with ferric chloride in the same way as mentioned above, the inventor found that stainless copper containing nickel, for example, 5
It was found that US304 works well as a second layer.
第２層を形成した後、引続き真空中で表層である銅をス
パッタリングすることにより回路基板の積層が完了する
。After forming the second layer, the surface copper layer is sputtered in a vacuum to complete the lamination of the circuit board.
本発明の方法において重要なことは、スパッタリングに
よる積層を行う前に絶縁基板をスパッタエツチングする
ことであり、そして、スパッタエツチングそれに続く第
１層、第２層１表層の各積層処理をその間に被処理体が
大気に暴露されることなく行うことである。被処理体の
スパッタエツチング及びそれに続く各積層処理を真空中
で行うためには、実際問題として、これらの処理を同一
真空層内で連続的に行うことが必要となってくる。What is important in the method of the present invention is that the insulating substrate is sputter-etched before lamination by sputtering, and that the sputter-etching and subsequent lamination processes of the first layer and the second layer 1 are performed in between. This is done without exposing the treated body to the atmosphere. In order to carry out the sputter etching of the object to be processed and the subsequent lamination processes in a vacuum, as a practical matter, it is necessary to carry out these processes consecutively within the same vacuum layer.
後述する本発明の製造粗はこの様な処理を行うために案
出されたものである。The manufacturing method of the present invention, which will be described later, was devised for carrying out such processing.
次ぎに本発明の方法の実施例、及び実施例による結果と
他方法による結果を説明する。Next, examples of the method of the present invention and results obtained by the examples and results obtained by other methods will be described.
爽施皿
後述する装置を用い、真空槽内を３Ｘ１０ Ｔｏｌｌｌ
ｔとした後、絶縁基板である２５μｍポリイミドフィル
ムに対してアルゴンイオンガンにてイオン電流２００ｍ
Ａで３０秒イオン照射した。そして引続き同一槽内で第
１層としてモリブデンを５００人、第２層として５ＵＳ
３０４を３００人、表層として銅を３０００λそれぞれ
スパッタリングにより順次積層した。真空槽から被処理
体を取出した後、電気銅メッキを施して３５μｍの回路
基板とした。Using the device described below, clean the inside of the vacuum chamber using a 3X10 toll.
After t, an ion current of 200 m was applied to a 25 μm polyimide film as an insulating substrate using an argon ion gun.
Ion irradiation was performed at A for 30 seconds. Then, in the same tank, 500 people of molybdenum was added as the first layer and 5 US as the second layer.
304 and 3000 λ of copper as a surface layer were sequentially laminated by sputtering. After taking out the object to be processed from the vacuum chamber, electrolytic copper plating was performed to obtain a 35 μm circuit board.
この様にして製造した回路基板の９０度ビール強度は
１．８ ｋｇ／ｃ、であった。The 90 degree beer strength of the circuit board manufactured in this way is
It was 1.8 kg/c.
比較例として。ポリイミドフィルム上に銅を直接スパッ
タリングしたもの、モリブデンを介して銅を積層したも
の、５ＩＩＳ３０４を介して銅を積層したもの、及び処
理方法としてイオンガン未使用のもの、イオン照射後一
旦大気にさらしたものについてのビール強度を実施例の
結果と共に表１に示す。As a comparative example. Those in which copper is directly sputtered on polyimide film, those in which copper is laminated through molybdenum, those in which copper is laminated through 5IIS304, those in which an ion gun is not used as a processing method, and those that are exposed to the atmosphere after ion irradiation. Table 1 shows the beer strength for each sample along with the results of the examples.
なおビール強度は９０度方向で行った。Note that beer strength was measured in a 90 degree direction.
表土
表１から明らかなように、下地処理としてイオンガン照
射処理を行ったたものは照射しないものに比較してビー
ル強度がかなり向上した。また、イオンガン照射に続く
第１層、第２層１表層の積層処理を引続き真空中で行っ
たものはさらにビール強度が向上し、イオンガン未使用
のものに比較して２倍以上の強度となった。また、絶縁
基板と接合すべき第１Ｎと表層（Ｃｕ層）との間に第２
層を介在させることにより、基板上に銅層を直接積層す
るもの或いは銅層の下地を一種類の金属だけで構成する
ものに比較して、ビール強度を向上させることができた
。またモリブデンと銅との間には第２層としてニッケル
含有のステンレス銅を介在させることが強度上好ましい
ことが明らかとなった。As is clear from Topsoil Table 1, the beer strength of the soil that was subjected to ion gun irradiation treatment as a surface treatment was significantly improved compared to that of the soil that was not irradiated. In addition, beer strength is further improved when the first layer and second layer 1 surface layer are laminated in a vacuum after ion gun irradiation, and the strength is more than twice as strong as when no ion gun is used. Ta. In addition, a second
By interposing the layer, beer strength could be improved compared to a method in which the copper layer is directly laminated on the substrate or a method in which the base of the copper layer is composed of only one type of metal. It has also been found that interposing nickel-containing stainless copper as a second layer between molybdenum and copper is preferable in terms of strength.
本発明の装置について説明する。第１図は本発明の実施
装置の水平断面図で、第２図は縦断面図である。基台１
上に、着脱自在の吊下げ型の容器２を被せて真空槽■を
構成し、その排気管３を真空ポンプ等の排気系に連通し
、ガス導入管４を減圧弁を介してガスボンベ等に連通ず
る。基台１上には外周に歯を刻んだ歯車５がスラストボ
ールベアリング６により回転自在に支持され、モータ７
により直接駆動される小歯車８が歯車５と噛み合い、こ
れにより被処理体Ｇの取付具９の基台となる歯車５が回
転する。取付具９は歯車５上に着脱自在に取付けられる
ことができ、被処理体Ｇの形状等により適当な取付具９
が選ばれる。前記歯車５の回転により取付具９に取付け
られた被処理体Ｇが真空槽Ｖ内を円軌道を描いて移動す
る。The apparatus of the present invention will be explained. FIG. 1 is a horizontal sectional view of an apparatus for implementing the present invention, and FIG. 2 is a vertical sectional view. Base 1
A removable hanging type container 2 is placed on top to form a vacuum chamber (2), its exhaust pipe 3 is connected to an exhaust system such as a vacuum pump, and the gas introduction pipe 4 is connected to a gas cylinder etc. via a pressure reducing valve. Communicate. A gear 5 with teeth carved on its outer periphery is rotatably supported on the base 1 by a thrust ball bearing 6, and a motor 7
A small gear 8 directly driven by the gear 5 meshes with the gear 5, and thereby the gear 5, which serves as the base of the fixture 9 for the object to be processed G, rotates. The fixture 9 can be detachably attached to the gear 5, and a suitable fixture 9 can be attached depending on the shape of the object G to be processed.
is selected. As the gear 5 rotates, the object G attached to the fixture 9 moves in a circular orbit inside the vacuum chamber V.
前記容器２は下方が開放され、また天井中央が陥没せら
れた縦断面凹状に形成され、これが吊下げ用の蓋１０の
フック１０ａで吊下げられるようになっている。真空槽
Ｖの形成は被処理体Ｇがセントされた基台１に対して上
方から容器２を降下させて被着する。The container 2 is open at the bottom and has a concave longitudinal section with a depressed center ceiling, and is suspended from a hook 10a of a hanging lid 10. The vacuum chamber V is formed by lowering the container 2 from above onto the base 1 on which the object to be processed G is deposited.
容器２の外周壁２ａ及びこれに対して二重壁を構成する
前記陥没部の内周壁２にイオン照射ガン１１、及びスパ
ッタリング用のターゲット１２．１３．１４が備え付け
られる。イオン照射ガン１１とターゲット１２，１３．
１４の取付位置は、第１図の１点鎖線で示す被処理体Ｇ
の移動の軌道に対して、該軌道の分割された各円弧位置
とされる。An ion irradiation gun 11 and targets 12, 13, and 14 for sputtering are installed on the outer peripheral wall 2a of the container 2 and the inner peripheral wall 2 of the recessed part forming a double wall with respect to the outer peripheral wall 2a. Ion irradiation gun 11 and targets 12, 13.
14 is attached to the object G shown by the dashed line in FIG.
is defined as each arcuate position obtained by dividing the trajectory.
今、被処理体Ｇの移動方向がＰ矢符方向とすると、第１
層を形成すべく配置されるターゲットが符号１２で、第
２層を形成すべく配置されるターゲットが符号１３で、
また表層である＃Ｊ層を形成すべく配置されるターゲッ
トが符号１４で示されることになる。そしてイオン照射
ガン１１及び各ターゲット１２，１３．１４は円周方向
に適当な間隔をもって配される。これは異なる金属をス
パッタリングする各ターゲット１．２．１３．１４間に
おける影響等を少なくするためである。遮蔽板１５を設
けて影響を少なくすることもできる。ターゲソ１−１２
．１３．１４に対してその背後にマグネトロン型マグネ
ット１２ａ、１３ａ、１４ａを配設してスパッタリング
に磁場を重畳させる。前記ターゲット１２，１３．１４
はそれぞれ図示しない電源に接続されて陰極とされ、こ
れに対して被処理体Ｇを陽極回路に接続することにより
、両者間に直流電圧を印加してスパッタリングを行う。Now, assuming that the moving direction of the object to be processed G is the direction of the P arrow, the first
The target placed to form the layer is 12, the target placed to form the second layer is 13,
Further, a target placed to form the #J layer, which is the surface layer, is indicated by the reference numeral 14. The ion irradiation gun 11 and each target 12, 13, 14 are arranged at appropriate intervals in the circumferential direction. This is to reduce the influence between the targets 1.2.13.14 for sputtering different metals. The influence can also be reduced by providing a shielding plate 15. targetso 1-12
．． Magnetron type magnets 12a, 13a, and 14a are arranged behind 13 and 14 to superimpose a magnetic field on sputtering. Said target 12, 13.14
are each connected to a power supply (not shown) to serve as a cathode, and by connecting the object G to be processed to an anode circuit, sputtering is performed by applying a DC voltage between the two.
イオン照射ガン１１、ターゲット１２．１３゜１４は外
周壁２ａ及び内周壁２ｂに設けられることから被処理体
Ｇの表裏両面を一度に処理することもできる。又２枚の
被処理体Ｇの片面を一度に処理できるので有利である。Since the ion irradiation gun 11 and the targets 12, 13 and 14 are provided on the outer circumferential wall 2a and the inner circumferential wall 2b, both the front and back sides of the object to be processed G can be treated at the same time. Furthermore, it is advantageous because one side of two objects G to be processed can be processed at the same time.
また容器２は中央部が陥没した形に形成しているので真
空槽Ｖ内の容積が必要最小限となり、排気時間が短くて
すむ。Further, since the container 2 is formed with a depressed central portion, the volume inside the vacuum chamber V is minimized, and the evacuation time can be shortened.
また中央部を陥没させて内周壁２ｂを形成させているの
でクーゲラ１への配置が可能となり、被処理体Ｇに対す
る両面照射が可能となる。Further, since the inner circumferential wall 2b is formed by recessing the central portion, it is possible to arrange it on the Kugera 1, and it is possible to irradiate both sides of the object G to be treated.
真空槽Ｖ内に七ソ１−された被処理体Ｇは移動につれて
、まずイオン照射ガン１１に例えばアルゴンイオンを照
射され、次にターゲット１２で第１層金属がスパッタリ
ングされ次にターゲット１３で第２層金属がスパッタリ
ングされ、さらに夕・−ゲソ１へ１４で銅がスパッタリ
ングされ、円軌道を１周したところで処理が完了する。As the workpiece G, which has been placed in the vacuum chamber V, is moved, it is first irradiated with, for example, argon ions by the ion irradiation gun 11, then the first layer metal is sputtered by the target 12, and then the first layer metal is sputtered by the target 13. A second layer of metal is sputtered, and then copper is sputtered on the second layer 14, and the process is completed after completing one round of the circular orbit.
立釆
本発明の製造方法によれば、イオン照射によるスパッタ
エツチングをスパッタリングに先立って行うようにして
いるので、絶遠基板に対する被覆層の密着強度を向上さ
せることができる。、またスパッタエツチング及びそれ
に続く第１層、第２層９表層の各スパッタリングを引続
き真空中で行うようにしたので被覆層の密着強度を一層
向上させることができる。また絶遠基板との密着性のよ
い金属を第１層とし、これに対して第１層金属及び表層
である銅のいずれにも密着性のよい金属を第２層として
介在させるようにてしいるからさらに密着強度を向上さ
せることができる。According to the manufacturing method of the present invention, since sputter etching by ion irradiation is performed prior to sputtering, the adhesion strength of the coating layer to the remote substrate can be improved. Furthermore, since the sputter etching and subsequent sputtering of the first and second layers 9 are performed in vacuum, the adhesion strength of the coating layer can be further improved. In addition, a metal with good adhesion to the distant substrate is used as the first layer, and a metal with good adhesion to both the first layer metal and the copper surface layer is interposed as the second layer. Because of this, the adhesion strength can be further improved.
また、本発明の！！Ｊ造装型装置れば、一つの真空槽内
で被処理体の移動方向に沿ってイオン照射ガン、第１層
金属のスパッタリングを行うターゲラ１−５第２Ｍ金属
のスパッタリングを行うターゲット、及び銅のスパッタ
リングを行うターゲットを配置しているので、被処理体
のスパッタエツチング、及びそれに続くスパッタリング
を引続き真空中で行ううことができ、本発明の方法を容
易に実施することができる。Also, the present invention! ! If the J-type molding equipment is used, an ion irradiation gun, a targeter 1-5 for sputtering the first layer metal, a target for sputtering the second M metal, and a copper Since a sputtering target is arranged, the sputter etching of the object to be processed and the subsequent sputtering can be performed continuously in a vacuum, and the method of the present invention can be easily carried out.
第１図は本発明の装置の実施例を示す水平断面図、第２
図は実施例の縦断面図である。
１−基台 ２−容器
３−排気管 ４−ガス導入管
５−歯車 ９−取付具
１１−イオン照射ガン
１２．１３．１４．−・ターゲット
Ｇ−・−被処理体 ■−・−真空槽
特許出願人 三容真空工業株式会社
代理人 弁理士西１）新Fig. 1 is a horizontal sectional view showing an embodiment of the device of the present invention;
The figure is a longitudinal sectional view of the embodiment. 1 - Base 2 - Container 3 - Exhaust pipe 4 - Gas introduction pipe 5 - Gear 9 - Fixture 11 - Ion irradiation gun 12.13.14. −・Target G−・−Object to be processed ■−・−Vacuum chamber Patent applicant Sanyo Shinku Kogyo Co., Ltd. Agent Patent attorney Nishi 1) Arata
Claims (3)
ッタエツチングし、次に引続いて真空中で前記基板と密
着性のよい金属を第１層としてスパッタリングし、次に
引続いて真空中で前記第１層及び表層である銅層の両方
に密着性のよい金属を第２Ｎとしてスパッタリングし、
さらに引続いて真空中で前記銅層をスパッタリング形成
することを特徴とする回路基板の製造方法。(1) Sputter etching an insulating substrate by ion irradiation in a vacuum, then sputtering a metal with good adhesion to the substrate as a first layer in a vacuum, then successively in a vacuum. Sputtering a metal with good adhesion to both the first layer and the surface copper layer as a second N,
A method of manufacturing a circuit board, further comprising subsequently forming the copper layer by sputtering in a vacuum.
、ニッケル含有のステンレス鋼をスパッタリングして第
２層を形成する特許請求の範囲第１項記載の回路基板の
製造方法。(2) The method for manufacturing a circuit board according to claim 1, wherein the first layer is formed by sputtering molybdenum, and the second layer is formed by sputtering nickel-containing stainless steel.
槽内で被処理体を円軌道に沿って移動させる移動機構と
を備え、前記円軌道の分割された各円弧位置に被処理体
の移動方向に沿ってイオン照射ガン、第１層金属のスパ
ッタリングを行うターゲ・７ト、第２Ｎ金属のスパッタ
リングを行うターゲット、及び銅のスパッタリングを行
うターゲソ１−をそれぞれ配置したことを特徴とする回
路基板の製造装置。(3) A vacuum chamber equipped with an exhaust system and a gas introduction system, and a moving mechanism for moving the object to be processed along a circular orbit within the vacuum chamber, and the object is placed at each divided arcuate position of the circular orbit. A feature is that an ion irradiation gun, a target 7 for sputtering the first layer metal, a target 7 for sputtering the second N metal, and a target 1 for sputtering copper are arranged along the moving direction of the processing body. Manufacturing equipment for circuit boards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11464983A JPS607191A (en) | 1983-06-24 | 1983-06-24 | Method of producing circuit board and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11464983A JPS607191A (en) | 1983-06-24 | 1983-06-24 | Method of producing circuit board and device therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS607191A true JPS607191A (en) | 1985-01-14 |
| JPH0138393B2 JPH0138393B2 (en) | 1989-08-14 |
Family
ID=14643088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11464983A Granted JPS607191A (en) | 1983-06-24 | 1983-06-24 | Method of producing circuit board and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS607191A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63185091A (en) * | 1987-01-28 | 1988-07-30 | 三井金属鉱業株式会社 | Circuit board and manufacture of the same |
| JPS6418148U (en) * | 1987-07-23 | 1989-01-30 | ||
| JPS6431967A (en) * | 1987-07-27 | 1989-02-02 | Tokio Nakada | Manufacture of thin film |
| JPH024967A (en) * | 1988-02-08 | 1990-01-09 | Optical Coating Lab Inc | Magnetron sputtering apparatus and method |
| US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
| WO2001036953A1 (en) * | 1999-11-15 | 2001-05-25 | Matsushita Electric Industrial Co., Ltd. | Biosensor, method of forming thin-film electrode, and method and apparatus for quantitative determination |
| US8128304B2 (en) | 2006-03-09 | 2012-03-06 | The Pilot Ink Co., Ltd. | Direct-fluid-supply writing implement |
| KR20170067784A (en) | 2014-10-16 | 2017-06-16 | 가부시키가이샤 구레다케 | Pen, and refill for pen |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5175972A (en) * | 1974-12-26 | 1976-06-30 | Ngk Insulators Ltd | Seramitsukuno metaraijinguhoho |
| JPS54139075A (en) * | 1978-04-19 | 1979-10-29 | Hitachi Ltd | Disconnecting switch |
-
1983
- 1983-06-24 JP JP11464983A patent/JPS607191A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5175972A (en) * | 1974-12-26 | 1976-06-30 | Ngk Insulators Ltd | Seramitsukuno metaraijinguhoho |
| JPS54139075A (en) * | 1978-04-19 | 1979-10-29 | Hitachi Ltd | Disconnecting switch |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63185091A (en) * | 1987-01-28 | 1988-07-30 | 三井金属鉱業株式会社 | Circuit board and manufacture of the same |
| JPS6418148U (en) * | 1987-07-23 | 1989-01-30 | ||
| JPS6431967A (en) * | 1987-07-27 | 1989-02-02 | Tokio Nakada | Manufacture of thin film |
| JPH024967A (en) * | 1988-02-08 | 1990-01-09 | Optical Coating Lab Inc | Magnetron sputtering apparatus and method |
| US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
| US7998325B2 (en) | 1999-11-15 | 2011-08-16 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US8349157B2 (en) | 1999-11-15 | 2013-01-08 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US6875327B1 (en) | 1999-11-15 | 2005-04-05 | Matsushita Electric Industrial Co., Ltd. | Biosensor, method of forming thin-film electrode, and method and apparatus for quantitative determination |
| WO2001036953A1 (en) * | 1999-11-15 | 2001-05-25 | Matsushita Electric Industrial Co., Ltd. | Biosensor, method of forming thin-film electrode, and method and apparatus for quantitative determination |
| US8025780B2 (en) | 1999-11-15 | 2011-09-27 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US8480866B2 (en) | 1999-11-15 | 2013-07-09 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US8142629B2 (en) | 1999-11-15 | 2012-03-27 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| KR100445489B1 (en) * | 1999-11-15 | 2004-08-21 | 마츠시타 덴끼 산교 가부시키가이샤 | Biosensor, method of forming thin-film electrode, and method and apparatus for quantitative determination |
| US8470162B2 (en) | 1999-11-15 | 2013-06-25 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US8475646B2 (en) | 1999-11-15 | 2013-07-02 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US8480867B2 (en) | 1999-11-15 | 2013-07-09 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US8480878B2 (en) | 1999-11-15 | 2013-07-09 | Panasonic Corporation | Biosensor, thin film electrode forming method, quantification apparatus, and quantification method |
| US8128304B2 (en) | 2006-03-09 | 2012-03-06 | The Pilot Ink Co., Ltd. | Direct-fluid-supply writing implement |
| KR20170067784A (en) | 2014-10-16 | 2017-06-16 | 가부시키가이샤 구레다케 | Pen, and refill for pen |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0138393B2 (en) | 1989-08-14 |
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