JPS6074249A - Ion beam apparatus - Google Patents

Ion beam apparatus

Info

Publication number
JPS6074249A
JPS6074249A JP58181535A JP18153583A JPS6074249A JP S6074249 A JPS6074249 A JP S6074249A JP 58181535 A JP58181535 A JP 58181535A JP 18153583 A JP18153583 A JP 18153583A JP S6074249 A JPS6074249 A JP S6074249A
Authority
JP
Japan
Prior art keywords
ion
filter
ion beam
wien
filters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58181535A
Other languages
Japanese (ja)
Other versions
JPH027503B2 (en
Inventor
Ryuzo Aihara
相原 竜三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
NTT Inc
Original Assignee
Jeol Ltd
Nihon Denshi KK
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK, Nippon Telegraph and Telephone Corp filed Critical Jeol Ltd
Priority to JP58181535A priority Critical patent/JPS6074249A/en
Publication of JPS6074249A publication Critical patent/JPS6074249A/en
Publication of JPH027503B2 publication Critical patent/JPH027503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Tubes For Measurement (AREA)

Abstract

PURPOSE:To simplify an ion beam apparatus, by providing Wien filters for filtering desired ions from a plurality kinds of ion beams generated by an ion source, in two stages, and interposing beam blanking electrodes therebetween. CONSTITUTION:Under a convergent lens 4 of an ion beam apparatus using an EHD type ion source are disposed Wien filters 21, 22 for ion filtration in two stages, and beam blanking electrodes 19' are interposed therebetween. A power source 16 for the convergent lens is controlled by a control unit 15 so that the ion beam forms its crossover image C1 right in the middle of the filters 21 and 22 and then converges on a material 12 after passing through a slit 10. Thus, it has been made possible to make beam blanking at the crossover point of the beam without the need for other convergent lens, alignment electrodes, or the like, and to simplify the apparatus.

Description

【発明の詳細な説明】 本発明は構造を簡略化しlζイオンげ一ム装買に関りる
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an Iζ ion system with a simplified structure.

第1図は例えば[Hf)(ELECTPO1−IY−D
 R○ I)YNAMIC3の略)■(イオンlIB;
!を用いたイオンビーム装置の概略図−(,1はイオン
ビ11が放則されるLミッタ(,2(、Lでの加熱用゛
11゜源で・ある。3は]エクストラクタ(1−’、 
X ’I” R△CI−E R) 、/lはイAンヒー
ノ、を集束りる為の集束レンズCある。5【よりソ〜1
−(、前記X[ウストノクタ3と該)JソードにはイΔ
ンビーノ\を通り為の小孔が明けられている。(3,7
は大々イオン1゛−1\を引出り為の引き出し主1を前
記土ミッタ゛1どエクストラクタ3の間に印加りる為の
引き出し↑15源、該引出したイオンビーl\を加速り
る為のll1l ’r中電圧を前記エミッタ1とカソー
ドS5の間に印加りる為の加速電源(−ある。前記集束
レンズ4の1・1〕には2枚の静電偏向板と2枚の磁極
板から成るウィーン型フィルタ8が配置され(おり、破
線(小り領域内のX軸方向に形成されく)電場とYqη
11方向に形成される磁場の強度はフィルタ電源5)の
出力によって可変される。104よスリン1−(・、前
記ノイルタ8によって分散されたイオンビームをカッ1
〜する為のものである。該スリン1〜を通過したrAン
ビームは対物レンズ11によって材料12上に集束され
る。13は位置制御用偏向電極で、該電極に印加される
偏向゛電源14の出ツノを調整づることにJ、つてイA
ンヒーl\のショク[〜(i’/ iI−を制御りるこ
とか出来る。
FIG. 1 shows, for example, [Hf)(ELECTPO1-IY-D
R○ I) Abbreviation of YNAMIC3) ■ (Ion lIB;
! Schematic diagram of an ion beam device using an ion beam device using an ion beam device (, 1 is an L emitter (, 2 (, 11° source for heating in L), from which the ion beam 11 is released; 3 is a] extractor (1-' ,
X 'I'' R△CI-E R) , /l is a focusing lens C to focus the
-(, Said X [Ustnocta 3 and the same) J sword has a
A small hole has been made to pass through Mbino\. (3,7
The drawer main 1 for drawing out the ions 1-1\ is applied between the soil mitter 1 and the extractor 3, and the puller ↑15 source is used to accelerate the extracted ion beam l\. The accelerating power source (1 and 1 of the focusing lens 4) for applying a medium voltage between the emitter 1 and the cathode S5 includes two electrostatic deflection plates and two magnetic poles. A Wien-type filter 8 consisting of a plate is arranged (as indicated by the broken line (formed in the X-axis direction in the small region)) and the electric field and Yqη
The strength of the magnetic field formed in the 11 directions is varied by the output of the filter power supply 5). 104 Yo Surin 1-(・, cut the ion beam dispersed by the Noirta 8
It is for the purpose of The rA beam that has passed through the Surins 1 is focused onto a material 12 by an objective lens 11. 13 is a deflection electrode for position control; J and A are used to adjust the output of the deflection power source 14 applied to the electrode;
It is possible to control the shock [~(i'/iI-) of Nheel\\.

該装置にdりいて、上ミッタ1から質量数の異な−)た
複数種のイオンを含むイオンビーI\を発119さμる
0、イしく、制御装置15の指令によって作動づる集束
レンズ電源16の出力を)の宜コンhロールしC前記、
イオンビームがフィルタE3の中心にり(−1スA−バ
像C1を形成りる様に覆る(尚、この+、Kにイオン源
のり[lス刺−バ像を一ノイルタの中心(ご形成りる理
由は特願昭57−186919月参照)。該フィルタは
、制御装置15の指令により作動りる前記フィルタ電源
9の出力により、所定のイオン(Φのみを直進さける様
に作動する。該イ調、/ビーム(,1、制御装置15の
指令にJ、す、[)f1記ス・j物しンス′1′1に出
力を印加Jる対物レンズ電源17の出力を通信゛コン1
へロールづることにより、相別121−に集束する。又
同時に該イオンビームの位置は位置制御用11−向電極
にJ、−、) (iント11−ルされる。
A converging lens power source 16 which is activated by a command from a control device 15 enters the device and emits an ion beam I containing a plurality of types of ions with different mass numbers from an upper emitter 1. ) and roll the output of C above,
The ion beam reaches the center of the filter E3 (-1) and covers it so as to form a bar image C1. (See Japanese Patent Application No. 57-186919 for the reason for this formation.) The filter is operated by the output of the filter power supply 9, which is activated in response to a command from the control device 15, so as to avoid only predetermined ions (Φ) from traveling straight. In response to the command of the control device 15, the output of the objective lens power supply 17 is applied to the output of the objective lens power source 17. 1
By rotating it, it focuses on phase 121-. At the same time, the position of the ion beam is controlled by the position control electrode 11.

さC、イオンビームを+A利にシ1ツ1〜りる揚台(特
にマスクレスイオン4J込み’k” ?’+ <j・)
揚台)のショク1〜時間の−」ン1へ]−1−ノロ、1
、ヒープ1通路1(、−ビーム/′/ンギング電1へを
配冒し、法主14jによつ0行なつCいる。、即ら、前
記制御装置i”i ’I りからのショッ1−詩間イ^
弓及び非シ]ツ1へ時間に阜)い(該冬時間に夕!l 
l+ixi シたIllの部分の幅及び谷の部分の幅を
イjりるパルスイバ号を発生りるパルス光′1器から該
ブランキング電極にバルスイr’i シ’tを供給シ、
(ショク[へ時間の二]ント1−1−ルを<’i <:
つ(いる、 I’Jiη、該フラン−1ング電極に供給
さねるパルス(l−、”’I LL般(、二立」−りど
立トリに(ぽ1斜をイj(7(いるの(、rAンヒーl
\のり[]]スA−ハ点Cノノンー1ンク4?1イわな
いど、前記s’l−Lりと)′11・りの1υ1間【こ
Jjい(、相別−1でヒー11が揺動し、所定以夕)の
部分にビームがショク1へされ(しまう、7従つC1り
11スΔ−バ点(ビームのブワン−)−ングをiI’c
−1:わねばイτlうないのであるが、前記装置にiI
5い(+、1、フィルタ330)1+ tシ\部にビー
ムブランキング用電極を配置することは構造−1−困&
i[Cあり又もし配置出来てもフィルタの電場や磁場が
乱れでしまうのC゛、該フィルタ内でビーlxブランキ
ングを行なうことは不可能である。2 そこC1前記第′1図に承り様に、フィルタ8の下方に
該)、rルタの中心に出来ているクロスオーバ像C1の
クロスオーバ像C2を形成り−る為の集束レンズ18を
新たに配置し、該クロスオーバ像C2の所にビームフラ
ンキング電極19を配直し、該電極にパルス発生器20
からパルス信号を供給りる様にし−でもJ、いが、新た
な集束レンズヤ)図示し・(いないが該レンズの電源(
高JI電り更に、アライメン1へ相電極も必要となり、
この結果、装置か大型化11つ複♀1(化りる。
C, lift the ion beam to +A (especially maskless ion 4J included 'k'?'+ <j・)
1 to 1 of time) -1 - Noro, 1
, the heap 1 path 1 (, -beam/'/nging electric 1 is distributed, and the 0th row is executed by the controller 14j. That is, the shot 1- from the controller i"i 'I is Shima I ^
Bows and non-bows are fixed at the same time (in the evening during the winter time)
A pulse wave r'i is supplied to the blanking electrode from a pulsed light source which generates a pulse signal that equals the width of the Ill portion and the width of the valley portion of the blanking electrode.
(Shoku[to time second] point 1-1-le <'i <:
I'Jiη, the pulse (l-, "'I LL general (, two stands)" - the pulse that is supplied to the flanging electrode (I'Jiη), (, rA Anheal
\Nori []] S A - C point C nonon - 1 Nk 4? 11 oscillates, and at a predetermined point, the beam is shunted to 1.
-1: If there is no iτl, but the iI
5 (+, 1, filter 330) 1+ It is difficult to arrange the beam blanking electrode in the shield part.
Even if it were possible to arrange it, the electric field and magnetic field of the filter would be disturbed, and it would be impossible to perform Blx blanking within the filter. 2 There, C1 As shown in Figure '1 above, below the filter 8), a new converging lens 18 is installed to form a crossover image C2 of the crossover image C1 formed at the center of the r filter. The beam flanking electrode 19 is rearranged at the crossover image C2, and the pulse generator 20 is connected to the electrode.
The new focusing lens is supplied with a pulse signal (not shown, but the power supply for the lens).
In addition, a phase electrode is also required for alignment 1 due to the high JI voltage.
As a result, the size of the equipment has increased by 11 times and by 1 time.

本発明はこの様な問題を解決−りることを目的としたも
のである。
The present invention is aimed at solving such problems.

本発明は質量数の異なる複数種類のイオンビームを発生
り−るイオン源、該イオン源から発生ずるイAンヒーl
\の内、所望の種類のイオンを選別するウィーン型フィ
ルタ、該ウィーン型フィルタのスリブ1−を通過したイ
オンビームを祠わII−に集中さける対物レンズ、該イ
Aンヒ一78を(A第11の所′liの位置に集束させ
る為の偏向1′一段から成る装に’i Itlおいで、
前記ウィーン型−フィルタをヒース、輔ブノ向に2段構
えひ配置し、該2段のノrルタの間にじ一へゾランキン
グ用電極を配置し、該ジノン−1ング電極の略中心にイ
オン源のり11スA−バ像を形成りる為の集束レンズを
設けた新規41−イオンビーム装置を提供りる゛ちの(
゛ある3、 第2図【、↓本発明の一実施例を示しlζイAシヒーム
装胃の概略図C1図中第1図に(使用した番目及び開目
ど同一番目及び記号のものは同 41.i成要索である
。該装置にd3いては、集束レンズ4の1・万には同一
ウィーン4t1!フイルタ2′1.22が隙間を隔−C
てlx、−)に配置され’(J3つ、該隙間に1ノン−
1ング電14119−が配置!’:、!され(いる13
図中20−は制御装@15からショク1−指令信FJに
阜つい(パルス信号を光づるパルス発/J7器C″ある
3、9− t;L前記フィルタ21.22を11ン(へ
11−ルづるフイルタ電源Cある。第3図は前記2段の
フィルタ21(2枚の、l、I、l、電偏向板を21へ
、21D、2枚の磁(i板を21N、21Sとり−る)
、22(2枚の静電偏向板を22△、22D、2枚の1
,11極板を22N、22Sどりる)とブランキング電
極19′の配置を示したものである。
The present invention relates to an ion source that generates multiple types of ion beams with different mass numbers, and an ion beam generated from the ion source.
\ includes a Wien filter that selects desired types of ions, an objective lens that avoids concentrating the ion beam that has passed through the sleeve 1- of the Wien filter onto the shrine II-; At point 11, 'i Itl is applied to a device consisting of one stage of deflection 1' for focusing at the position 'li.
The Wien type filter is arranged in two stages facing the heath and the bottom, and a ranking electrode is placed between the two stages of filters, and approximately at the center of the Wien filter. We provide a new 41-ion beam device equipped with a focusing lens for forming an ion source beam image.
3. Figure 2 [, ↓ An embodiment of the present invention is shown in Figure 1 of the Figures. 41.i component search.In this device, in d3, the same Vienna 4t1! filter 2'1.22 is spaced apart from the 1.
'(3 J, 1 non-) in the gap.
1 ng electric 14119- is placed! ':,! 13
In the figure, 20- is from the control device @15 to the first command signal FJ (pulse generator that emits a pulse signal/J7 device C''); 11 - There is a filter power source C. Fig. 3 shows the two-stage filter 21 (two plates L, I, L, electric deflection plates to 21, 21D, two magnetic plates (i plate to 21N, 21S) Tori-ru)
, 22 (two electrostatic deflection plates are 22△, 22D, two 1
, 11 electrode plates 22N, 22S) and the arrangement of the blanking electrode 19'.

斯くの如ぎ装置にJ−3いて、制御装置15は」−ミッ
タ1 /J1 +うIllり出されたイオンビーl\が
フィルタ21どフィルタ22の真中にクロスA−バ(I
 C+を形成力る川に集束レンズ電源1(3を二1ン1
へ[1−ルリ−る。従っC1実質的にウィーン型フィル
タの中心にり1]スオ−−バ像が形成されることに4T
す、特駈i It!−i 57−186919号と同一
の目的は)ヱ成される1、該2段のフィルタ内において
はイへンビー八は夫々の電磁界の作用を受り、その結果
直進したものかスリット10を通過し、対物レンズ11
に1二つ(材オ)112上に集束される。さて、このO
N、制i卸装首15はパルス発生器20−に所定のショ
ッ1一時間及び非ショッ1〜時間に対応した時間を指定
りる信号を送る。而しく前記エミッタ1から放出されI
こヒーム(ま−fラン=Xング電44i ’I 9 ’
−に、上・ンで非ショッ1へ時間にス・j応した時間ヒ
ース\は偏向され、スリットCカッ1へされ(シJ1、
うの(、この間ヒーム(ま拐才」」二に前身・1されイ
ヱい。y、シ]・ント11’r間に対l、6シた時間ビ
ーノ\は無偏向イ;(1)C’、この間ビームは材料上
に照射される。7 本発明にJ、れ(3[、≧′jiたに集束レンズやjA
レレンの高圧電源やアライメン1〜電tlljを設(〕
ることイ「<、2段′1′フィルタの一°4中にVシン
1ンク7i; 44Iを配置りるだ()て、ビーl\の
り[1スン一バ点もヒーパノラン1−ング作川を・(J
なうことか出来るの(、装置1″°イが簡略化l′つ単
純化りる3゜
In such a device, the control device 15 is injected into the cross A-bar (I) in the middle of the filters 21 and 22.
Focusing lens power supply 1 (3 to 21 to 1) to the river forming C+
To [1-luli-ru. Therefore, C1 is substantially at the center of the Wien filter, and 4T
Su, special gear It! -i 57-186919) In the two-stage filter, the Ihenbees are affected by the respective electromagnetic fields, and as a result, either the one that goes straight or the one that passes through the slit 10. passing through the objective lens 11
It is focused on one or two (materials) 112. Now, this O
N, control head 15 sends a signal to pulse generator 20- specifying times corresponding to predetermined shot 11 times and non-shock 1-times. Therefore, I is emitted from the emitter 1.
Koheem (ma-f run=X ngden 44i 'I 9'
-, the time heath \ corresponding to the time S j is deflected to the non-shot 1 at the top and N, and is directed to the slit C cup 1 (S J1,
(1) During this time, Beano \ was unbiased; (1) C', during which the beam is irradiated onto the material.
Install high-voltage power supply and alignment 1 to electric tllj ()
By placing the V sink 1 link 7i; The river (J
Is it possible to do something?

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のイオンじ−18装[h゛の(1火路図、
a′12図は本発明の 実施例とし′(小したイオンじ
一ム装置の概略図、第3図はイの一部を示した0の−で
 (V)る 。 1、土ζツク 4:集束レンズ 9′:フィルタ電源 10:スリツIへ 11:対物レンズ 12:拐料 13:位置制御用偏向電極 15:制御装置 ゛16:集束レンズ電源 17;対物レンズ電源 19′二ノランキング電極 20′:パルス発生器 21: 22:ウィーン型フィルタ C1,C2:クロス刺−バ像 1Si泊出願人 I」本電子株式会着 代表者 1111体 −人
Fig. 1 shows the conventional ion engine with
Figure a'12 is an embodiment of the present invention' (schematic diagram of a small ion system device, Figure 3 shows a part of A with a - (V)).1. : Focusing lens 9': Filter power supply 10: To slot I 11: Objective lens 12: Filter 13: Deflection electrode for position control 15: Control device 16: Focusing lens power supply 17; Objective lens power supply 19' Second ranking electrode 20' :Pulse generator 21: 22:Vienna type filter C1, C2:Cross stabber image 1Si Tomari Applicant I"Representative of this electronic stock meeting 1111 bodies -Person

Claims (1)

【特許請求の範囲】[Claims] 質量数の異なる側1Φ類のイオンビームを発生づるイオ
ン源、該イオン源から発生りるイオンビームの内、所望
の種類のイオンを選別づるウィーン型フィルタ、該ウィ
ーン型フィルタのスリン[−を通過したイオンビームを
拐わl」−に集束さける夕4物レンス、該イオンビーム
を材料の所定の位置に集束さける為の偏向手段から成る
装置におい−c1前記ウィーン型フィルタをビーム軸方
向に2段構えて配置し、該2段のフィルタの間にビーム
ブランキング用電極を配置し、該ブランキング市極の略
中心にイオン源のクロスオーバ像を形成する為の集束レ
ンズを設(ブたイオンビーム装置。
An ion source that generates ion beams of 1Φ class on the side with different mass numbers, a Wien filter that selects desired types of ions from the ion beam generated from the ion source, and a Wien filter that passes through the Surin [-] of the Wien filter. In the apparatus, the Wien type filter is arranged in two stages in the beam axis direction. A beam blanking electrode is placed between the two filters, and a focusing lens is placed approximately at the center of the blanking pole to form a crossover image of the ion source. Beam device.
JP58181535A 1983-09-29 1983-09-29 Ion beam apparatus Granted JPS6074249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58181535A JPS6074249A (en) 1983-09-29 1983-09-29 Ion beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58181535A JPS6074249A (en) 1983-09-29 1983-09-29 Ion beam apparatus

Publications (2)

Publication Number Publication Date
JPS6074249A true JPS6074249A (en) 1985-04-26
JPH027503B2 JPH027503B2 (en) 1990-02-19

Family

ID=16102471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58181535A Granted JPS6074249A (en) 1983-09-29 1983-09-29 Ion beam apparatus

Country Status (1)

Country Link
JP (1) JPS6074249A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172650A (en) * 1986-01-23 1987-07-29 Jeol Ltd Focusing ion beam device
JPS6441885U (en) * 1987-09-07 1989-03-13
AT391771B (en) * 1987-03-05 1990-11-26 Ims Ionen Mikrofab Syst DEVICE FOR REDUCING OR 1: 1 ION PROJECTION LITHOGRAPHY
JP2006301406A (en) * 2005-04-22 2006-11-02 Sii Nanotechnology Inc Processing method and focused ion beam processing apparatus using focused ion beam

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172650A (en) * 1986-01-23 1987-07-29 Jeol Ltd Focusing ion beam device
AT391771B (en) * 1987-03-05 1990-11-26 Ims Ionen Mikrofab Syst DEVICE FOR REDUCING OR 1: 1 ION PROJECTION LITHOGRAPHY
JPS6441885U (en) * 1987-09-07 1989-03-13
JP2006301406A (en) * 2005-04-22 2006-11-02 Sii Nanotechnology Inc Processing method and focused ion beam processing apparatus using focused ion beam
WO2006115090A1 (en) * 2005-04-22 2006-11-02 Sii Nanotechnology Inc. Processing method by using focused ion beam and focused ion beam processing apparatus
US7750318B2 (en) 2005-04-22 2010-07-06 Sii Nanotechnology Inc. Working method by focused ion beam and focused ion beam working apparatus

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