JPS6076117A - Method for crystallization of semiconductor thin film - Google Patents

Method for crystallization of semiconductor thin film

Info

Publication number
JPS6076117A
JPS6076117A JP58183523A JP18352383A JPS6076117A JP S6076117 A JPS6076117 A JP S6076117A JP 58183523 A JP58183523 A JP 58183523A JP 18352383 A JP18352383 A JP 18352383A JP S6076117 A JPS6076117 A JP S6076117A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
heater
crystallization
recrystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58183523A
Other languages
Japanese (ja)
Inventor
Takashi Tomita
尚 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58183523A priority Critical patent/JPS6076117A/en
Publication of JPS6076117A publication Critical patent/JPS6076117A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、多結晶薄膜、非晶質薄膜を加熱溶融して再結
晶化させるいわゆるゾーンメルト法における半導体薄膜
の結晶化方法に関する・背景技術とその問題点 絶縁基板又は絶縁層上に被着形成した多結晶又は非晶質
の半導体薄膜（例えば多結晶シリコン薄膜）をゾーンメ
ルト法にょシ再結晶化させて単結晶薄膜を作シ、この単
結晶薄膜を用いて半導体集積回路等を製作することが行
われている。このようなゾーンメルト法の一つとして、
例えはカーボン・ヒータを使用した結晶化方法が誌る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for crystallizing a semiconductor thin film in the so-called zone melt method in which a polycrystalline thin film or an amorphous thin film is melted and recrystallized by heating. Problem: A polycrystalline or amorphous semiconductor thin film (for example, a polycrystalline silicon thin film) deposited on an insulating substrate or an insulating layer is recrystallized using the zone melt method to produce a single crystal thin film. 2. Description of the Related Art Semiconductor integrated circuits and the like are manufactured using thin films. As one of such zone melt methods,
For example, a crystallization method using a carbon heater is described.

この結晶化方法は、第１図に示すように、固定ヒータ（
２）に多結晶シリコン薄膜が形成された基板（１）を載
置し、固定ヒータ（２）で基板（１）を予備加熱すると
共に、多結晶シリコンの溶融温度にまで加熱したストリ
ップヒータ（３）を基板（１）上で所定間隔を保ってＡ
方向に平行に移動させることによシ、多結晶シリコンを
単結晶シリコンに連続的に再結晶化させるものである。This crystallization method uses a fixed heater (
A substrate (1) on which a polycrystalline silicon thin film is formed is placed on a substrate (2), and the substrate (1) is preheated by a fixed heater (2), and a strip heater (3) heated to the melting temperature of polycrystalline silicon is placed on the substrate (1). ) on the board (1) while keeping a predetermined interval A.
By moving parallel to the direction, polycrystalline silicon is continuously recrystallized into single crystal silicon.

従来のこの棟のストリップヒータ（３）は、断面が四角
の棒状をなしていたため、再結晶中のシリコン層の温度
分布は、第２図の曲線（４）に示すように゛、多結晶シ
リコンの溶融径急激に下降していた。この結果、得られ
る再結晶薄膜には、サブバウンダリ（５ｕｂｂｏｕｎｄ
ａｒｙ　）と呼ばれる結晶欠陥が多く発生するという問
題点がめった。このようなサブバウンダリの発生面密度
は、溶融後の冷却速度に依存する。従来、上記棒状のス
トリップヒータ（３）を２本使用してサブバウンダリの
発生面密度を小さくする゛方法が提案されているか、こ
の方法によっても、サブバウンダリの発生を充分阻止す
ることができなかった。The conventional strip heater (3) in this building had a square bar shape in cross section, so the temperature distribution of the silicon layer during recrystallization was as shown in curve (4) in Figure 2. The melt diameter was rapidly decreasing. As a result, the recrystallized thin film obtained has sub-boundaries (5ubbound
However, the problem that a large number of crystal defects called ary) occur frequently occurs. The surface density of such sub-boundaries depends on the cooling rate after melting. Conventionally, a method has been proposed in which the above-mentioned two rod-shaped strip heaters (3) are used to reduce the surface density of sub-boundaries, but even with this method, the occurrence of sub-boundaries cannot be sufficiently prevented. Ta.

発明の目的 本発明は、上述の点に鑑み、サブバウンダリの発生を充
分阻止することができ、従って結晶性の高い再結晶薄膜
を得ることができる半導体薄膜の結晶化方法を提供する
ものである〇 発明の概要 本発明は、半導体薄膜をヒータを使用して溶融し、連続
的に再結晶化させる半導体薄膜の結晶化方法において、
溶融後の半導体薄膜が徐冷されるように再結晶化させる
ことを特徴とする半導体薄膜の結晶化方法である＠ 上記発明によシ、再結晶化された半導体薄膜の結晶性を
高めることが可能になる。Purpose of the Invention In view of the above-mentioned points, the present invention provides a method for crystallizing a semiconductor thin film, which can sufficiently prevent the occurrence of sub-boundaries and, therefore, can obtain a recrystallized thin film with high crystallinity. 〇Summary of the Invention The present invention provides a method for crystallizing a semiconductor thin film in which the semiconductor thin film is melted using a heater and continuously recrystallized.
A method for crystallizing a semiconductor thin film, which is characterized in that the semiconductor thin film after melting is recrystallized while being slowly cooled. It becomes possible.

実施例 本発明においては、第１の実施例である第３図に示すよ
うに固定ヒータ（２）に載置された基板（１）に対して
、平板状のス）　ＩＪツブヒータ（７）が成る角度θを
持つように（ストリップヒータの移動方向Ａに対して後
部となる部分を上に上げて角度を持たす）配置されて構
成された半導体薄膜の加熱装置を用意する。この基板（
１）は、石英板（５）とこの上に形成された多結晶シリ
コン薄膜（６）を有して成る。Embodiment In the present invention, as shown in FIG. 3 which is a first embodiment, a flat IJ tube heater (7) is placed on a substrate (1) placed on a fixed heater (2). A semiconductor thin film heating device is prepared, which is arranged so as to have an angle θ (the rear portion thereof is raised upward with respect to the moving direction A of the strip heater). This board (
1) comprises a quartz plate (5) and a polycrystalline silicon thin film (6) formed thereon.

そして、このストリップヒータ（７）を基板（１）との
所定間隔を保って従来と同じ速度（例えば約２ｍｍ／　
５ｅｅ）で平行に移動させる。なお、上記ストリップヒ
ータ（７）は、平板状のストリップヒータであるが、こ
の細断面が曲線状のものでもよく、溶融後のシリコン薄
膜の温度分布が所要の緩やかなものとなるような任意の
形状のストリップヒータを使用することができる。例え
ば、凸状のストリップヒータの場合、融点近傍、特に融
点よシ低い温度域での温度変化を緩やかにすることがで
き、逆に凹状のストリップヒータの場合、特に融点より
高い温度域での温度変化を緩やかにすることができる。Then, the strip heater (7) is moved at the same speed as before (for example, about 2 mm/
5ee) to move in parallel. Although the strip heater (7) is a flat strip heater, it may also have a curved thin cross section, and may be any shape that provides the required gentle temperature distribution of the silicon thin film after melting. A shaped strip heater can be used. For example, a convex strip heater can slow down temperature changes near the melting point, especially in a temperature range below the melting point, while a concave strip heater can slow temperature changes, especially in a temperature range above the melting point. Changes can be made gradual.

また、階段状にして、融点近傍の上Ｆの温度域での温度
変化を緩やかにするようにしてもよい。まだ、上記実施
例では、ストリップヒータ（７）を移動させるように構
成したが、逆に固定ヒ゛−タ（２）の方を移動させるよ
うに構成してもよい。Alternatively, it may be formed into a step-like shape so that the temperature change in the upper F temperature range near the melting point is made gentler. In the above embodiment, the strip heater (7) is configured to be moved, but the fixed heater (2) may be configured to be moved.

上記本方法による再結晶中のシリコン層の温度分布を測
定したグラフを第４図に示す。この曲線（８）から明ら
かな通ル、溶融後のシリコンの温度は緩やかな曲線を描
いて下降しておシ、従来のように急激には下降していな
いので、サブバウンダリの発生面密度を小さくすること
ができ、従って素子形成のために有効に利用できる単結
晶シリコン領域を拡大することができる。なお、曲線（
８）の徐冷中の温度分布を示す部分の形状は、平板状の
ストリップヒータ（７）の大きさ及び傾き角θを変える
ことによシ調整することができる。FIG. 4 shows a graph showing the temperature distribution of the silicon layer during recrystallization according to the present method. It is clear from this curve (8) that the temperature of the silicon after melting decreases in a gentle curve, but not as rapidly as in the past, which reduces the areal density of sub-boundaries. The size of the single crystal silicon can be reduced, thus increasing the area of single crystal silicon that can be effectively used for device formation. Note that the curve (
The shape of the portion showing the temperature distribution during slow cooling in 8) can be adjusted by changing the size and inclination angle θ of the flat strip heater (7).

本発明の他の実施例を第５図に示す。本実施例において
は、平板状ストリップヒータの基板（１）と対する面に
基板（１）への輻射熱を漸次弱めることができる輻射熱
防止層（９）を設けたストリップヒータθ１を基板（す
に対して平行に配置して構成した半導体薄膜の加熱装置
を用意する。そして、このストリップヒータα１をＡ方
向に平行に移動させることによシ、上記第１の実施例の
場合と同様に、温度分布曲線に緩やかな下降線を描かせ
て溶融後のシリコンを徐冷させることができる。Another embodiment of the invention is shown in FIG. In this example, a strip heater θ1 is provided with a radiant heat prevention layer (9) that can gradually weaken the radiant heat to the substrate (1) on the surface of the flat strip heater facing the substrate (1). A semiconductor thin film heating device is prepared which is arranged in parallel with each other.By moving this strip heater α1 parallel to the direction A, the temperature distribution can be adjusted as in the case of the first embodiment. The melted silicon can be slowly cooled by drawing a gentle descending line on the curve.

発明の効果 本発明によれば、溶融後の半導体薄膜を徐冷させること
ができるので、従来問題となっていたサブバウンダリの
発生を阻止又は極力少くすることができる。従って、本
発明によシ得られた半導体薄膜は、結晶性が高く、また
素子形成のために有効に利用できる再結晶領域が広い。Effects of the Invention According to the present invention, since the semiconductor thin film after melting can be slowly cooled, the occurrence of sub-boundaries, which has been a problem in the past, can be prevented or minimized. Therefore, the semiconductor thin film obtained according to the present invention has high crystallinity and a wide recrystallized region that can be effectively used for device formation.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の半導体薄膜の結晶化方法の説明に供する
斜視図、第２図はシリコン薄膜の加熱状態を説明するた
めの図、第３図及び菌５図は本発明の実施例の断面図、
第４図は本発明におけるシリコン薄膜の加熱状態を示す
図である。 （１）は基板、（２）は固定ヒータ、（３）　、　（７
）　、αＱはストリップヒータ、（５）は石英板、（６
）は多結晶シリコン第１図 第２図 Ａ 第３図 第４図 第５図FIG. 1 is a perspective view for explaining the conventional method of crystallizing a semiconductor thin film, FIG. 2 is a diagram for explaining the heating state of a silicon thin film, and FIGS. 3 and 5 are cross sections of an embodiment of the present invention. figure,
FIG. 4 is a diagram showing the heating state of the silicon thin film in the present invention. (1) is the board, (2) is the fixed heater, (3), (7
), αQ is a strip heater, (5) is a quartz plate, (6
) is polycrystalline silicon Figure 1 Figure 2 A Figure 3 Figure 4 Figure 5

Claims (1)

【特許請求の範囲】[Claims] 半導体薄膜をヒータを使用して溶融し、連続的に再結晶
化させる半導体薄膜の結晶化方法において、溶融後の半
導体薄膜が徐冷されるように再結晶化させることを特徴
とする半導体薄膜の結晶化方法。A semiconductor thin film crystallization method in which a semiconductor thin film is melted using a heater and continuously recrystallized, the semiconductor thin film being recrystallized so that the semiconductor thin film after melting is slowly cooled. Crystallization method.
JP58183523A 1983-09-30 1983-09-30 Method for crystallization of semiconductor thin film Pending JPS6076117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58183523A JPS6076117A (en) 1983-09-30 1983-09-30 Method for crystallization of semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58183523A JPS6076117A (en) 1983-09-30 1983-09-30 Method for crystallization of semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS6076117A true JPS6076117A (en) 1985-04-30

Family

ID=16137332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58183523A Pending JPS6076117A (en) 1983-09-30 1983-09-30 Method for crystallization of semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS6076117A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128024A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Single crystallization for non-single crystalline semiconductor layer
JPS58147024A (en) * 1982-02-24 1983-09-01 Fujitsu Ltd Lateral epitaxial growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128024A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Single crystallization for non-single crystalline semiconductor layer
JPS58147024A (en) * 1982-02-24 1983-09-01 Fujitsu Ltd Lateral epitaxial growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US5317170A (en) * 1990-11-29 1994-05-31 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays without a substrate

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